SEMICONDUCTOR E35A23VS, E35A23VR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. A3 A2 A1 D3 FEATURES B1 B2 D2 ·Zener Voltage : 23V(Typ.) D1 ·Average Forward Current : IO=35A. E MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Average Forward Current IF(AV) 35 A Peak 1 Cycle Surge Current IFSM 450 (50Hz) A IRSM 70 A Peak Revese Over Voltage VRSM 70 V Peak Revese Voltage VRM 17 V Junction Temperature Tj -40～200 ℃ Tstg -40～150 ℃ Peak Reverse Surge Current (IRSM/2=10ms) Storage Temperature Range DIM A1 A2 A3 B1 B2 C1 C2 D1 G F MILLIMETERS _ 0.3 10.0 + _ 0.3 13.5 + _ 0.5 24.0 + _ 0.3 8.5 + _ 0.3 10.0 + _ 0.3 2.0 + _ 0.3 5.0 + _ 0.3 2.5 + DIM D2 D3 E F G H T C2 E35A23VR (- Type) H (+ Type) C1 E35A23VS T POLARITY MILLIMETERS _ 0.3 5.0 + _ 0.3 4.5 + _ 0.3 1.9 + _ 0.3 9.0 + _ 0.3 1.0 + _ 0.5 4.4 + _ 0.3 0.6 + MR ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Peak Forward Voltage VFM IFM=100A - - 1.05 V Zener Voltage VZ IZ=10mA 20 23 26 V Repetitive Peak Reverse Current IRRM VR=VRM - - 10 μA Transient Thermal Resistance ∆VF IFM=100A - - 90 mV HIR Ta=150℃, VR=VRM - - 2.5 mA Rth DC total junction to case - - 1.0 ℃/W Reverse Leakage Current Under High Temperature Temperature Resistance 2009. 12. 15 Revision No : 1 1/1