Bulletin I27103 rev. A 09/97 IRK.F82.. SERIES FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR INT-A-pakä Power Modules Features 81 A Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package UL E78996 approved Description These series of INT-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required. Major Ratings and Characteristics Parameters IRK.F82.. Units 81 A 90 °C 180 A @ 50Hz 2200 A @ 60Hz 2300 A @ 50Hz 24.2 KA 2s @ 60Hz 22.1 KA 2s 242 KA 2√s 10 and 15 µs 2 µs I T(AV) @ TC I T(RMS) I TSM 2 I t I 2√t tq range t rr VDRM / V RRM TJ range www.irf.com up to 800 - 40 to 125 V o C 1 IRK.F82.. Series Bulletin I27103 rev. A 09/97 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number IRK.F82.. Voltage VRRM/VDRM, maximum repetitive VRSM , maximum non- IRRM/I DRM max. Code peak reverse voltage repetitive peak rev. voltage @ T J = 125°C V V mA 04 400 400 08 800 800 30 Current Carrying Capacity ITM ITM Frequency f o 180 el ITM Units 100µs 180 el o 50Hz 160 265 250 400 2240 3100 A 400Hz 200 320 290 475 1070 1550 A 2500Hz 150 240 260 400 370 550 A 5000Hz 135 215 235 355 235 355 A 10000Hz 90 160 190 275 - - A Recovery voltage Vr 50 50 50 50 50 50 V Voltage before turn-on Vd 80% VDRM 80% VDRM 80% VDRM V Rise of on-state current di/dt 50 50 - - - - A/µ s Case temperature 90 60 90 60 90 60 °C Equivalent values for RC circuit 22 Ω / 0.15 µF 22 Ω / 0.15 µF 22 Ω / 0.15 µF On-state Conduction Parameter IT(AV) IRK.F82.. Units Conditions Maximum average on-state current 81 A @ Case temperature 90 °C 180° conduction, half sine wave IT(RMS) Maximum RMS current 180 A TC = 90°C, as AC switch ITSM Maximum peak, one-cycle, 2200 A t = 10ms non-repetitive surge current 2300 t = 8.3ms reapplied 1850 t = 10ms 100% VRRM 1950 I2 t Maximum I2 t for fusing 24.2 KA2 s Maximum I2 √t for fusing t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = 125°C 22.1 t = 8.3ms reapplied 17.1 t = 10ms 100% VRRM t = 8.3ms reapplied 15.6 I2 √t No voltage 242 VT(TO)1 Low level value of threshold voltage 1.20 VT(TO)2 High level value of threshold voltage 1.24 r t1 Low level value of on-state slope resistance 2.18 KA 2√s t = 0 to 10ms, no voltage reapplied V (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x I T(AV)), TJ = TJ max. mW (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x I T(AV)), TJ = TJ max. r t2 High level value of on-state slope resistance 2.00 VTM Maximum on-state voltage drop 1.96 V IH Maximum holding current 600 mA TJ = 25°C, IT > 30 A IL Typical latching current 1000 mA TJ = 25°C, VA = 12V, Ra = 6Ω, Ig = 1A 2 Ipk = 350A, T J = T J max., tp = 10ms sine pulse www.irf.com IRK.F82.. Series Bulletin I27103 rev. A 09/97 Switching Parameter IRK.F82.. di/dt Maximum non-repetitive rate of rise trr Maximum recovery time tq Maximum turn-off time Units Conditions 800 A/µs 2 µs Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% VDRM T J = 25°C N L 10 15 ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C ITM = 350A, T J = 125°C, di/dt = -25A/µs, µs VR = 50V, dv/dt = 400V/µs linear to 80% V DRM Blocking Parameter dv/dt IRK.F82.. Maximum critical rate of rise of off-state 1000 Units Conditions V/µs TJ = 125°C., exponential to = 67% VDRM 3000 V 50 Hz, circuit to base, TJ = 25°C, t = 1 s 30 mA voltage VINS RMS isolation voltage IRRM Maximum peak reverse and off-state IDRM leakage current TJ = 125°C, rated VDRM/VRRM applied Triggering Parameter IRK.F82.. Units Conditions P GM Maximum peak gate power 40 W f = 50 Hz, d% = 50 P G(AV) Maximum peak average gate power 2 W TJ = 125°C, f = 50Hz, d% = 50 IGM Maximum peak positive gate current 5 A TJ = 125°C, tp < 5ms - VGM Maximum peak negative gate voltage 5 V IGT Max. DC gate current required to trigger 200 mA V GT DC gate voltage required to trigger 3 V IGD DC gate current not to trigger 20 mA V GD DC gate voltage not to trigger 0.25 V TJ = 25°C, Vak 12V, Ra = 6 TJ = 125°C, rated VDRM applied Thermal and Mechanical Specifications Parameter IRK.F82.. TJ Max. junction operating temperature range - 40 to 125 T stg Max. storage temperature range - 40 to 150 RthJC Max. thermal resistance, junction to Units Conditions °C 0.25 K/W Per junction, DC operation 0.035 K/W Mounting surface flat and greased case RthC-hs Max. thermal resistance, case to heatsink T Mounting torque ± 10% wt Approximate weight www.irf.com Per module IAP to heatsink 4 - 6 (35 - 53) busbar to IAP 4 - 6 (35 - 53) 500 (17.8) A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is (lb*in) not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound Nm 3 IRK.F82.. Series Bulletin I27103 rev. A 09/97 ∆RthJC Conduction (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction 180° 0.016 0.011 120° 0.019 0.020 90° 0.024 0.026 60° 0.035 0.037 30° 0.060 0.060 Units Conditions K/W TJ = 125°C Ordering Information Table Device Code IRK T F 8 2 1 2 3 4 5 1 - Module type 2 - Circuit configuration 3 - Fast SCR 4 - Current rating: IT(AV) x 10 rounded 5 - 1= 2= - 08 H L N 6 7 8 8 option with spacers and longer terminal screws option with standard terminal screws 6 - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) 7 - dv/dt code: H ≤ 400V/µs 8 - tq code: N ≤ 10µs L ≤ 15µs 9 - None = Standard devices N = Aluminum nitrade substrate NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.F82.. Series Bulletin I27103 rev. A 09/97 Outline Table - All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0 For all types A B C D E IRK...1 25 (0.98) ---- ---- 41 (1.61) 47 (1.85) IRK...2 23 (0.91) 30 (1.18) 36 (1.42) ---- ---- IRKHF.. IRKLF.. IRKUF.. 130 IRK.F82.. Series R thJC (DC) = 0.25 K/W 120 110 Conduction Angle 100 90 30° 60° 90° 80 120° 180° 70 0 20 40 60 80 100 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics www.irf.com IRKVF.. Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) IRKTF.. IRKKF.. 130 IRKNF.. IRK.F82.. Series R thJC (DC) = 0.25 K/W 120 110 Conduction Period 100 30° 90 60° 90° 80 120° 180° DC 70 0 20 40 60 80 100 120 140 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 5 IRK.F82.. Series 180° 120° 90° 60° 30° 120 100 80 RMS Limit 60 Conduction Angle 40 IRK.F82.. Series Per Junction T J = 125°C 20 0 0 10 20 30 40 50 60 70 80 90 Maximum Average On-state Power Loss (W) 140 200 DC 180° 120° 90° 60° 30° 180 160 140 120 100 RMS Limit 80 Conduction Period 60 IRK.F82.. Series Per Junction T J = 125°C 40 20 0 0 20 80 100 120 140 Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics 2000 At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1900 1800 1700 1600 1500 1400 1300 1200 1100 IRK.F82.. Series Per Junction 1000 900 10 100 2200 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125°C No Voltage Reapplied Rated VRRMReapplied 2000 1800 1600 1400 1200 1000 IRK.F82.. Series Per Junction 800 0.01 Number Of Equal Amplitude Half Cycle Curre nt Pulses (N) T J = 25°C T J = 125°C 1000 IRK.F82.. Series Per Junction 100 1 2 3 4 5 6 7 8 1 Fig. 6 - Maximum Non-Repetitive Surge Current Transient Thermal Impedance Z thJC(K/W) 10000 0.1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 60 Average On-state Current (A) 1 6 40 Average On-state Current (A) Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Max imum Average On-state Power Loss (W) Bulletin I27103 rev. A 09/97 1 Steady State Value R thJC= 0.25 K/W (DC Operation) 0.1 0.01 IRK.F82.. Series Per Junction 0.001 0.001 0.01 0.1 1 10 100 Instantaneous On-state Voltage (V) Square Wave Pulse Duration (s) Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic www.irf.com IRK.F82.. Series 160 IRK.F82.. Series T J = 125 °C 140 Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Charge - Qrr (µC) Bulletin I27103 rev. A 09/97 ITM = 500 A 300 A 120 200 A 100 100 A 80 60 50 A 40 20 10 20 30 40 50 60 70 80 90 100 120 110 I TM = 500 A IRK.82.. Series T J= 125 °C 100 300 A 90 200 A 80 100 A 70 50 A 60 50 40 30 20 10 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 9 - Reverse Recovery Charge Characteristic Fig. 10 - Reverse Recovery Current Characteristic Peak On-state Current (A) 1E4 Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM IRK.F82.. Series Sinusoidal Pulse T C = 60 °C tp 1E3 1000 400 tp Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM IRK.F82.. Series Sinusoidal Pulse T C = 90 °C 50 Hz 150 2500 1000 400 150 50 Hz 2500 5000 5000 1E2 1E1 1E2 1E3 1E4 E1 1E4 1E1 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics Peak On-state Current (A) 1E4 Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM IRK.F82.. Series Trapezoidal Pulse T C = 60 °C, di/dt 50A/µs tp tp Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM IRK.F82.. Series Trapezoidal Pulse T = 60 °C, di/dt 100A/µs C 50 Hz 1E3 50 Hz 150 150 400 1000 1000 2500 2500 5000 1E2 1E1 400 5000 1E2 1E3 1E4 1E1 1E41E1 Pulse Basewidth (µs) 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics www.irf.com 7 IRK.F82.. Series Bulletin I27103 rev. A 09/97 Peak On-state Current (A) 1E4 tp Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM IRK.F82.. Series Trapezoidal Pulse T C = 90 °C, di/dt 50A/µs 1E3 Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM IRK.F 82.. Series Trapezoidal Pulse T C = 90 °C, di/dt 100A/µs tp 50 Hz 150 400 1000 150 400 1000 2500 50 Hz 2500 5000 5000 1E2 1E1 1E2 1E4 1E41E1 1E1 1E3 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics 1E4 0.5 0.25 0.1 1E3 5 1 1 2.5 5 10 joules per pulse 0.5 0.25 0.1 0.05 0.05 0.01 1E2 tp IRK.F82.. Series Sinusoidal pulse 1E1 1E1 IRK.F82.. Series Trapezoidal Pulse di/dt 50A/µs tp 1E2 1E3 1E4 1E1 1E1 1E4 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 100 Rectangular gate pulse a) Recommended load line for rated di/dt : 20 V, 10 ohms tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10 V, 10 ohms 10 tr<=1 µs (a) (b) VGD IGD 0.1 0.01 (1) IRK.F82.. Series 0.1 (1) PGM = 10W, tp = 10ms (2) PGM = 20W, tp = 5ms (3) PGM = 40W, tp = 2.5ms Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) Peak On-state Current (A) 10 joules per pulse 2.5 (2) (3) Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics 8 www.irf.com