CSD-8M CSD-8N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON CONTROLLED RECTIFIERS 8.0 AMP, 600 THRU 800 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR CSD-8M and CSD-8N are epoxy molded SCRs designed for sensing circuit and control system applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage VDRM, VRRM RMS On-State Current (TC=90°C) IT(RMS) Peak One Cycle Surge, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power, tp=10μs Average Gate Power Dissipation Peak Forward Gate Current, tp=10μs Peak Forward Gate Voltage, tp=10μs Peak Reverse Gate Voltage, tp=10μs Critical Rate of Rise of On-State Current Operating Junction Temperature Storage Temperature CSD-8M 600 ITSM I2t CSD-8N 800 UNITS V 8.0 A 80 A 32 A2s PGM PG (AV) IFGM 40 W 1.0 W 4.0 A VFGM VRGM di/dt 16 V 5.0 V 50 A/μs -40 to +125 °C -40 to +150 °C TJ Tstg ELECTRICAL SYMBOL IDRM, IRRM IDRM, IRRM CHARACTERISTICS: (TC=25°C unless otherwise noted) TEST CONDITIONS MIN TYP Rated VDRM, VRRM Rated VDRM, VRRM, TC=125°C IGT IH VD=12V, RL=10Ω IT=100mA 3.0 VGT VTM VD=12V, RL=10Ω ITM=16A, tp=380μs dv/dt VD=2 /3 VDRM, TC=125°C 200 MAX 10 UNITS μA 2.0 mA 15 mA 7.3 20 mA 0.9 1.5 V 1.3 1.8 V V/μs R2 (21-January 2013) CSD-8M CSD-8N SURFACE MOUNT SILICON CONTROLLED RECTIFIERS 8.0 AMP, 600 THRU 800 VOLT DPAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate 4) Anode MARKING: FULL PART NUMBER R2 (21-January 2013) w w w. c e n t r a l s e m i . c o m