MICROWAVE CORPORATION HMC121 v01.0801 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 15 GHz 2 Typical Applications Features • Base Station Infrustructure Wide Bandwidth: DC - 15 GHz • Portable Wireless, CATV & DBS Low Phase Shift vs. Attenuation • MMDS & Wireless LAN 30 dB Attenuation Range • Wireless Local Loop Simplified Voltage Control ATTENUATORS - CHIP • Military, Space, & Test Equipment General Description Functional Diagram The HMC121 chip is an absorptive voltage variable attenuator. It features an on-chip reference attenuator for use with an external op-amp to provide simple single voltage attenuation control. The device is ideal in designs where an analog control signal must control RF signal levels over a 30 dB range, such as AGC circuits and in temperature compensation of multiple gain stages. See SMT packaged versions HMC121G8 (hermetic) and HMC121C8 (non hermetic). Electrical Specifications, TA = +25° C, 50 ohm system Parameter Min. Typ. Max. Units 1.8 2 2.8 3.5 dB dB Inser tion Loss DC - 8 GHz: DC - 15 GHz: Attenuation Range 25 30 dB 13 10 18 15 dB dB 3 6 ns ns Min Atten: Atten. >2 dB: +10 -2 dBm dBm Min Atten: Atten. >2 dB: +25 +10 dBm dBm Return Loss DC - 8 GHz: DC - 15 GHz: Switching Characteristics tRISE, tFALL (10/90% RF): tON, tOFF (50% CTL to 10/90% RF): Input Power for 0.25 dB Compression (0.5 - 15 GHz) Input Third Order Intercept (0.5 - 15 GHz) (Two - tone Input Power = 8 dBm Each Tone) 2 - 10 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] HMC121 v01.0801 MICROWAVE CORPORATION GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 15 GHz Insertion Loss Relative Attenuation 0 ATTENUATION (dB) INSERTION LOSS (dB) -1 -2 -3 -4 -5 2 -10 -20 -30 -40 0 2 4 6 8 10 12 14 16 0 2 4 FREQUENCY (GHz) Return Loss 12 14 16 Relative Attenuation vs. Control Voltage 0 CONTROL VOLTAGE 0 -10 -20 -30 -0.5 -1 V2 V1 -1.5 -2 -2.5 -3 0 2 4 6 8 10 12 14 16 0 5 FREQUENCY (GHz) 10 15 20 25 RELATIVE ATTENUATION (dB) 30 Relative Phase 90 RELATIVE PHASE (DEG) RETURN LOSS (dB) 6 8 10 FREQUENCY (GHz) ATTENUATORS - CHIP 0 70 20 dB 50 30 10 dB 10 1 dB and 3 dB -10 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 2 - 11 MICROWAVE CORPORATION HMC121 v01.0801 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 15 GHz Single-Line Control Driver Absolute Maximum Ratings ATTENUATORS - CHIP 2 50 RF Input Power +16 dBm Control Voltage Range +1.0 to -6.0 Vdc Storage Temperature -65 to +150 deg C Operating Temperature -55 to +125 deg C 50 RF1 RF2 500 500 500 500 V2 I O V1 CTL +5V 500 1N4148 3.9K 500 3.9K TL321 OR EQUIVALENT -5V External op-amp control circuit maintains impedance match while attenuation is varied. Input control ranges from 0 Volts (min. attenuation) to -2.5 Volts (max. attenuation). Outline Drawing 0.87 (0.034) 0.12 (0.005) PORT RF1 1.10 (0.043) PORT RF2 0.67 (0.026) Hittite V2 V1 0.09 (0.003) 0.21 (0.008) 0.24 (0.009) 0.39 (0.015) PORT V1 PORT O PORT I PORT V2 0.54 (0.021) ALL DIMENSIONS ARE: ± 0.025 (0.001) DIE THICKNESS IS 0.10 (0.004), BACKSIDE IS GROUND BOND PADS ARE 0.10 (0.004) SQUARE ALL DIMENSIONS IN MILLIMETERS (INCHES) BOND PAD METALLIZATION: GOLD BACKSIDE METALLIZATION: GOLD 2 - 12 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] MICROWAVE CORPORATION HMC121 v01.0801 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 15 GHz Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. 2 Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. ATTENUATORS - CHIP Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC Bias) or ribbon bond (RF ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 2 - 13