H11A1X, H11A2X, H11A3X, H11A4X, H11A5X H11A1, H11A2, H11A3, H11A4, H11A5 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following Test Bodies :Nemko - Certificate No. P96101299 Fimko - Registration No. 190469-01..22 Semko - Reference No. 9620076 01 Demko - Reference No. 305567 Dimensions in mm 2.54 7.0 6.0 1 2 6 5 3 4 1.2 7.62 6.62 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 3.35 0.26 DESCRIPTION The H11A series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available l APPLICATIONS DC motor controllers l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances l OPTION SM OPTION G ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation 30V 70V 6V 160mW 7.62 SURFACE MOUNT POWER DISSIPATION 0.6 0.1 10.46 9.86 1.25 0.75 0.26 Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail [email protected] http://www.isocom.com 7/12/00 DB91041m-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) Input Output Coupled PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 6 1.2 V V µA IF = 10mA IR = 10µA VR = 6V 30 V IC = 1mA 70 6 V V nA nA IC = 100µA IE = 100µA VCE = 10V VCE = 10V % % % % % 10mA IF , 10mA IF , 10mA IF , 10mA IF , 10mA IF , V VRMS VPK Ω µs µs 10mA IF , 0.5mA IC See note 1 See note 1 VIO = 500V (note 1) VCC = 10V , IC= 2mA RL = 100Ω fig 1 10 Collector-emitter Breakdown (BVCEO) ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Collector-base Dark Current (ICBO) 50 20 Current Transfer Ratio (CTR) H11A1 H11A2 H11A3 H11A4 H11A5 50 20 20 10 30 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO 5x1010 Output Rise Time tr 2 Output Fall Time tf 2 Note 1 Note 2 1.5 TEST CONDITION 0.4 10V 10V 10V 10V 10V VCE VCE VCE VCE VCE Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. VCC Input ton toff RL = 100Ω tr Output tf Output 10% 10% 90% 90% FIG 1 7/12/00 DB91041m-AAS/A1 Collector Power Dissipation vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current 2.8 Relative current transfer ratio Collector power dissipation P C (mW) 200 150 100 50 2.4 2.0 1.6 1.2 0.8 VCE = 0.5V TA = 25°C 0.4 0 0 -30 0 25 50 75 100 1 125 2 5 10 20 50 Forward current IF (mA) Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current 80 1.4 Relative current transfer ratio Forward current I F (mA) 70 60 50 40 30 20 10 1.2 1.0 0.8 0.6 0.4 VCE = 10V TA = 25°C 0.2 0 0 50 75 100 125 5 10 20 Collector-emitter Saturation Voltage vs. Ambient Temperature (V) Relative Current Transfer Ratio vs. Ambient Temperature 1.0 0.5 0 25 50 75 Ambient temperature TA ( °C ) 100 Collector-emitter saturation voltage V IF = 10mA VCE = 10V -30 2 Forward current IF (mA) 0 7/12/00 1 Ambient temperature TA ( °C ) 1.5 Relative current transfer ratio 25 CE(SAT) -30 50 0.14 0.12 IF = 10mA IC = 0.5mA 0.10 0.08 0.06 0.04 0.02 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) DB91041m-AAS/A1