AOW298 100V N-Channel MOSFET General Description Product Summary The AOW298 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition, switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 100V 58A RDS(ON) (at VGS=10V) < 14.5mΩ 100% UIS Tested 100% Rg Tested TO-262 Top View D Bottom View G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current TA=25°C ±20 V A 41 130 IDM 9 IDSM TA=70°C Units V 58 ID TC=100°C C Maximum 100 A 7 Avalanche Current C IAS, IAR 20 A Avalanche energy L=0.1mH C EAS, EAR 20 mJ TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0 : Oct. 2011 2.1 Steady-State Steady-State RθJA RθJC W 1.33 TJ, TSTG Symbol t ≤ 10s W 50 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 100 PD TC=100°C -55 to 175 Typ 12 50 1.2 www.aosmd.com °C Max 15 60 1.5 Units °C/W °C/W °C/W Page 1 of 6 AOW298 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS，ID=250µA 2.7 VGS=10V, VDS=5V 130 TJ=55°C VGS=10V, ID=20A 5 nA 4.1 V 12 14.5 19 24 A gFS Forward Transconductance VDS=5V, ID=20A 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=50V, ID=20A µA ±100 Static Drain-Source On-Resistance TJ=125°C Units 3.3 RDS(ON) Coss Max V VDS=100V, VGS=0V IDSS ID(ON) Typ mΩ S 1 V 70 A 1250 1670 pF 727 970 pF 25 43 pF 2 3 Ω 19 27 nC 5.5 nC 6 nC 7.5 ns 14 ns 15 ns 14 ns IF=20A, dI/dt=500A/µs 39 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 140 ns nC VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0 : Oct. 2011 www.aosmd.com Page 2 of 6 AOW298 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 7V 60 60 ID(A) 80 ID (A) 80 6V 40 40 125°C 20 20 25°C Vgs=5V 0 0 0 1 2 3 4 2 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2.2 18 2 Normalized On-Resistance 20 RDS(ON) (mΩ Ω) 16 VGS=10V 14 12 10 3 4 5 6 7 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 8 VGS=10V ID=20A 1.8 17 5 2 10 1.6 1.4 1.2 1 0.8 8 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 40 1.0E+02 ID=20A 1.0E+01 40 32 1.0E+00 125°C 24 IS (A) RDS(ON) (mΩ Ω) 125°C 1.0E-01 25°C 1.0E-02 1.0E-03 16 1.0E-04 25°C 1.0E-05 8 5 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0 : Oct. 2011 6 7 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOW298 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2000 VDS=50V ID=20A 8 1600 Capacitance (pF) VGS (Volts) Ciss 6 4 2 1200 800 Coss 400 0 0 0 4 8 12 16 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 100 800 1000.0 TJ(Max)=175°C TC=25°C 10µs10µs RDS(ON) 100µs 10.0 DC 1.0 1ms 10ms TJ(Max)=175°C TC=25°C 0.1 600 Power (W) 100.0 ID (Amps) Crss 17 5 2 10 400 200 0.0 0 0.01 0.1 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.0001 0.001 0.01 0.1 1 10 0 100 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case for (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev0 : Oct. 2011 www.aosmd.com Page 4 of 6 AOW298 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 Power Dissipation (W) Current rating ID(A) 80 60 40 20 90 60 30 0 0 0 25 50 75 100 125 150 TCASE (° °C) Figure 17: Current De-rating (Note F) 0 175 100 25 50 75 100 125 150 TCASE (° °C) Figure 18: Power De-rating (Note F) 175 IAR (A) Peak Avalanche Current 10000 TA=25°C 1000 TA=100°C TA=125°C Power (W) TA=25°C 17 5 2 10 100 10 TA=150°C 1 10 0.001 0.1 10 0 1000 18 Pulse Width (s) Figure 20: Single Pulse Power Rating Junction-toAmbient (Note H) 1 10 100 Time in avalanche, tA (µ µs) Figure 19: Single Pulse Avalanche capability (Note C) 0.00001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 21: Normalized Maximum Transient Thermal Impedance (Note H) Rev0 : Oct. 2011 www.aosmd.com Page 5 of 6 AOW298 AOW298 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev0 : Oct. 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6