Microchip MCP1703T-5002E/DB 250 ma, 16v, low quiescent current ldo regulator Datasheet

MCP1703
250 mA, 16V, Low Quiescent Current LDO Regulator
Features
Description
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The MCP1703 is a family of CMOS low dropout (LDO)
voltage regulators that can deliver up to 250 mA of
current while consuming only 2.0 µA of quiescent
current (typical). The input operating range is specified
from 2.7V to 16.0V, making it an ideal choice for two to
six primary cell battery-powered applications, 9V
alkaline and one or two cell Li-Ion-powered
applications.
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2.0 µA Typical Quiescent Current
Input Operating Voltage Range: 2.7V to16.0V
250 mA Output Current for Output Voltages ≥ 2.5V
200 mA Output Current for Output Voltages < 2.5V
Low Drop Out Voltage, 625 mV typical @ 250 mA
for VR = 2.8V
0.4% Typical Output Voltage Tolerance
Standard Output Voltage Options:
- 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V,
5.0V
Output voltage range: 1.2V to 5.5V in 0.1V
increments (50 mV increments available upon
request)
Stable with 1.0 µF to 22 µF ceramic output
capacitance
Short-Circuit Protection
Overtemperature Protection
Applications
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Battery-powered Devices
Battery-powered Alarm Circuits
Smoke Detectors
CO2 Detectors
Pagers and Cellular Phones
Smart Battery Packs
Low Quiescent Current Voltage Reference
PDAs
Digital Cameras
Microcontroller Power
Solar-Powered Instruments
Consumer Products
Battery Powered Data Loggers
The MCP1703 is capable of delivering 250 mA with
only 625 mV (typical) of input to output voltage
differential (VOUT = 2.8V). The output voltage tolerance
of the MCP1703 is typically ±0.4% at +25°C and ±3%
maximum over the operating junction temperature
range of -40°C to +125°C. Line regulation is ±0.1%
typical at +25°C.
Output voltages available for the MCP1703 range from
1.2V to 5.5V. The LDO output is stable when using only
1 µF of output capacitance. Ceramic, tantalum, or
aluminum electrolytic capacitors can all be used for
input and output. Overcurrent limit and overtemperature
shutdown provide a robust solution for any application.
Package options include the SOT-223-3, SOT-23A,
2x3 DFN-8, and SOT-89-3.
Package Types
2x3 DFN-8 *
VOUT 1
NC 2
EP
9
NC 3
GND 4
8 VIN
VIN
7 NC
3
6 NC
5 NC
1
3-Pin SOT-89
© 2009 Microchip Technology Inc.
2
GND VOUT
Related Literature
• AN765, “Using Microchip’s Micropower LDOs”,
DS00765, Microchip Technology Inc., 2002
• AN766, “Pin-Compatible CMOS Upgrades to
BiPolar LDOs”, DS00766,
Microchip Technology Inc., 2002
• AN792, “A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”,
DS00792, Microchip Technology Inc., 2001
3-Pin SOT-23A
SOT-223-3
VIN
1
2
3
GND VIN VOUT
1
VIN
2
3
GND VOUT
* Includes Exposed Thermal Pad (EP); see Table 3-1.
DS22049D-page 1
MCP1703
Functional Block Diagrams
MCP1703
VOUT
VIN
Error Amplifier
+VIN
Voltage
Reference
+
Overcurrent
Overtemperature
GND
Typical Application Circuits
MCP1703
VOUT
3.3V
VOUT
VIN
9V
Battery
DS22049D-page 2
+
CIN
1 µF Ceramic
VIN
VIN
COUT
1 µF Ceramic
IOUT
50 mA
GND
© 2009 Microchip Technology Inc.
MCP1703
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
VDD..................................................................................+18V
All inputs and outputs w.r.t. .............(VSS-0.3V) to (VIN+0.3V)
Peak Output Current ...................................................500 mA
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature ................................. +150°C
ESD protection on all pins (HBM;MM)............... ≥ 4 kV; ≥ 400V
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VOUT(MAX) + VDROPOUT(MAX), Note 1,
ILOAD = 100 µA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 7) of -40°C to +125°C.
Parameters
Symbol
Min
Typ
Max
Units
Conditions
Input Operating Voltage
VIN
Input Quiescent Current
Iq
2.7
—
16.0
V
Note 1
—
2.0
5
µA
IL = 0 mA
IOUT_mA
250
—
—
mA
For VR ≥ 2.5V
50
100
—
mA
For VR < 2.5V, VIN ≥ 2.7V
100
130
—
mA
For VR < 2.5V, VIN ≥ 2.95V
150
200
—
mA
For VR < 2.5V, VIN ≥ 3.2V
200
250
—
mA
For VR < 2.5V, VIN ≥ 3.45V
IOUT_SC
—
400
—
mA
VIN = VIN(MIN) (Note 1), VOUT = GND,
Current (average current) measured
10 ms after short is applied.
VOUT
VR-3.0%
VR-2.0%
VR±0.4
%
VR+3.0%
VR+2.0%
V
Note 2
TCVOUT
—
50
—
ppm/°C
Note 3
Line Regulation
ΔVOUT/
(VOUTXΔVIN)
-0.3
±0.1
+0.3
%/V
(VOUT(MAX) + VDROPOUT(MAX)) ≤ VIN
≤ 16V, Note 1
Load Regulation
ΔVOUT/VOUT
-2.5
±1.0
+2.5
%
IL = 1.0 mA to 250 mA for VR >= 2.5V
IL = 1.0 mA to 200 mA for VR < 2.5V
VIN = 3.65V, Note 4
Input / Output Characteristics
Maximum Output Current
Output Short Circuit Current
Output Voltage Regulation
VOUT Temperature Coefficient
Note 1:
2:
3:
4:
5:
6:
7:
The minimum VIN must meet two conditions: VIN ≥ 2.7V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)).
VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V.
The input voltage VIN = VOUT(MAX) + VDROPOUT(MAX) or ViIN = 2.7V (whichever is greater); IOUT = 100 µA.
TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
© 2009 Microchip Technology Inc.
DS22049D-page 3
MCP1703
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VOUT(MAX) + VDROPOUT(MAX), Note 1,
ILOAD = 100 µA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 7) of -40°C to +125°C.
Parameters
Dropout Voltage
Note 1, Note 5
Symbol
6:
7:
Conditions
330
650
mV
IL = 250 mA, VR = 5.0V
725
mV
IL = 250 mA, 3.3V ≤ VR < 5.0V
—
625
975
mV
IL = 250 mA, 2.8V ≤ VR < 3.3V
—
750
1100
mV
IL = 250 mA, 2.5V ≤ VR < 2.8V
—
—
—
mV
VR < 2.5V, See Maximum Output
Current Parameter
TDELAY
—
1000
—
µs
VIN = 0V to 6V, VOUT = 90% VR,
RL = 50Ω resistive
eN
—
8
PSRR
—
44
—
dB
TSD
—
150
—
°C
Thermal Shutdown Protection
5:
Units
525
Power Supply Ripple
Rejection Ratio
4:
Max
—
Output Noise
3:
Typ
—
VDROPOUT
Output Delay Time
Note 1:
2:
Min
µV/(Hz)1/2 IL = 50 mA, f = 1 kHz, COUT = 1 µF
f = 100 Hz, COUT = 1 µF, IL = 100 µA,
VINAC = 100 mV pk-pk, CIN = 0 µF,
VR = 1.2V
The minimum VIN must meet two conditions: VIN ≥ 2.7V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)).
VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V.
The input voltage VIN = VOUT(MAX) + VDROPOUT(MAX) or ViIN = 2.7V (whichever is greater); IOUT = 100 µA.
TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
TEMPERATURE SPECIFICATIONS1
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Operating Junction Temperature Range
TJ
-40
—
+125
°C
Steady State
Maximum Junction Temperature
TJ
—
—
+150
°C
Transient
Storage Temperature Range
TA
-65
—
+150
°C
Thermal Resistance, 3LD SOT-223
θJA
θJC
—
—
62
15
—
—
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
Thermal Resistance, 3LD SOT-23A
θJA
θJC
—
—
336
110
—
—
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
Thermal Resistance, 3LD SOT-89
θJA
θJC
—
—
153,3
100
—
—
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
Thermal Resistance, 8LD 2x3 DFN
θJA
θJC
—
—
93
26
—
—
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
Thermal Package Resistance (Note 2)
Note 1:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
2:
Thermal Resistance values are subject to change. Please visit the Microchip Website for the latest packaging
information.
DS22049D-page 4
© 2009 Microchip Technology Inc.
MCP1703
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction
temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.
120
VOUT = 1.2V
IOUT = 0 µA
5.00
4.00
GND Current (µA)
Quiescent Current (µA)
6.00
+130°C
-45°C
3.00
+90°C
+25°C
2.00
1.00
0°C
0.00
2
VOUT = 1.2V
VIN = 2.7V
100
80
60
40
20
0
4
6
8
10
12
14
16
0
18
40
80
Quiescent Current vs. Input
FIGURE 2-4:
Current.
5.00
4.00
+130°C
3.00
+90°C
2.00
+25°C
-45°C
1.00
0°C
VOUT = 5.0V
VIN = 6.0V
100
80
60
VOUT = 2.5V
VIN = 3.5V
40
20
0
0.00
2
4
6
8
10
12
14
16
0
18
50
100
FIGURE 2-2:
Voltage.
Quiescent Current vs. Input
6.00
Quiescent Current (µA)
0°C
4.00
-45°C
+130°C
3.00
+25°C
+90°C
2.00
FIGURE 2-5:
Current.
200
250
Ground Current vs. Load
3.00
VOUT = 5.0V
IOUT = 0 µA
5.00
150
Load Current (mA)
Input Voltage (V)
Quiescent Current (µA)
200
Ground Current vs. Load
120
VOUT = 2.5V
IOUT = 0 µA
GND Current (µA)
Quiescent Current (µA)
6.00
160
Load Current (mA)
Input Voltage (V)
FIGURE 2-1:
Voltage.
120
1.00
VOUT = 2.5V
VIN = 3.5V
2.50
VOUT = 1.2V
VIN = 2.7V
IOUT = 0 mA
2.00
1.50
1.00
VOUT = 5.0V
VIN = 6.0V
0.50
0.00
6
8
10
12
14
16
18
Input Voltage (V)
FIGURE 2-3:
Voltage.
Quiescent Current vs. Input
© 2009 Microchip Technology Inc.
-45
-20
5
30
55
80
105
130
Junction Temperature (°C)
FIGURE 2-6:
Quiescent Current vs.
Junction Temperature.
DS22049D-page 5
MCP1703
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
1.24
VOUT = 1.2V
ILOAD = 0.1 mA
1.230
-45°C
Output Voltage (V)
Output Voltage (V)
1.240
0°C
1.220
1.210
+130°C
1.200
+90°C
+25°C
1.190
1.180
1.23
-45°C
0°C
+25°C
1.22
+90°C
1.21
+130°C
1.20
VIN = 3.0V
VOUT = 1.2V
1.19
1.18
2
4
6
8
10
12
14
16
18
0
20
40
60
FIGURE 2-7:
Voltage.
Output Voltage vs. Input
FIGURE 2-10:
Current.
VIN = 3.5V
VOUT = 2.5V
2.53
2.54
+90°C
+130°C
2.52
Output Voltage vs. Load
2.54
VOUT = 2.5V
ILOAD = 0.1 mA
2.56
Output Voltage (V)
Output Voltage (V)
2.58
2.50
2.48
0°C
-45°C
+25°C
2.46
2.44
2.52
+25°C
+90°C
2.51
2.50
2.49
2.48
0°C
-45°C
2.47
+130°C
2.46
2
4
6
8
10
12
14
16
18
0
50
Input Voltage (V)
FIGURE 2-8:
Voltage.
5.16
Output Voltage vs. Input
5.04
150
200
5.04
5.00
-45°C
0°C
4.96
+25°C
4.92
250
Output Voltage vs. Load
5.06
+90°C
+130°C
FIGURE 2-11:
Current.
Output Voltage (V)
5.08
100
Load Current (mA)
VOUT = 5.0V
ILOAD = 0.1 mA
5.12
Output Voltage (V)
80 100 120 140 160 180 200
Load Current (mA)
Input Voltage (V)
4.88
VIN = 6V
VOUT = 5.0V
+90°C
+130°C
5.02
5.00
4.98
0°C
4.96
-45°C
+25°C
4.94
4.92
6
8
10
12
14
16
18
0
Input Voltage (V)
FIGURE 2-9:
Voltage.
DS22049D-page 6
Output Voltage vs. Input
50
100
150
200
250
Load Current (mA)
FIGURE 2-12:
Current.
Output Voltage vs. Load
© 2009 Microchip Technology Inc.
MCP1703
Dropout Voltage (V)
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
VOUT = 2.5V
+130°C
+90°C
+25°C
+0°C
-45°C
0
25
50
75 100 125 150 175 200 225 250
Load Current (mA)
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Dropout Voltage vs. Load
+130°C
+90°C
+25°C
+0°C
-45°C
25
50
Dynamic Line Response.
900
VOUT = 5.0V
0
FIGURE 2-16:
Short Circuit Current (mA)
Dropout Voltage (V)
FIGURE 2-13:
Current.
VOUT = 2.5V
ROUT < 0.1?
800
700
600
500
400
300
200
100
0
75 100 125 150 175 200 225 250
2
4
6
8
Load Current (mA)
FIGURE 2-14:
Current.
Dropout Voltage vs. Load
10
12
14
16
18
Input Voltage (V)
FIGURE 2-17:
Input Voltage.
Short Circuit Current vs.
Load Regulation (%)
1.00
VOUT = 1.2V
IOUT = 1 mA to 200 mA
VIN = 6V
0.90
VIN = 12V
0.80
0.70
0.60
0.50
VIN = 16V
0.40
0.30
VIN = 14V
VIN = 3.8V
VIN = 3.2V
0.20
-45
-20
5
30
55
80
105
130
Temperature (°C)
FIGURE 2-15:
Dynamic Line Response.
© 2009 Microchip Technology Inc.
FIGURE 2-18:
Temperature.
Load Regulation vs.
DS22049D-page 7
MCP1703
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
1.00
VIN = 16V
0.80
0.20
VOUT = 2.5V
IOUT = 1 mA to 250 mA
0.60
Line Regulation (%/V)
Load Regulation (%)
1.20
VIN = 6V
0.40
0.20
0.00
VIN = 3.5V
VIN = 12V
-0.20
VIN = 14V
-0.40
-45
-20
5
30
55
80
105
VOUT = 2.5V
VIN = 3.5V to 16V
0.16
200 mA
0.08
100 mA
0.04
0 mA
0.00
-45
130
-20
5
VOUT = 5.0V
IOUT = 1 to 250 mA
VIN = 16V
VIN = 6V
0.60
VIN = 12V
0.40
0.20
0.00
VIN = 8V
-0.20
VIN = 14V
-0.40
-45
-20
5
30
55
80
105
0.14
130
VOUT = 5.0V
VIN = 6.0V to 16.0V
200mA
0.14
250 mA
0.12
0.10
0 mA
100 mA
0.08
-45
-20
5
30
55
80
105
130
Temperature (°C)
FIGURE 2-23:
Temperature.
Load Regulation vs.
Line Regulation vs.
0
VIN = 3.0 to 16.0V
VOUT = 1.2V
-10
-20
0.12
0.10
105
0.06
130
200 mA
1 mA
0.08
0.06
0 mA
0.04
100 mA
PSRR (dB)
Line Regulation (%/V)
0.16
80
Line Regulation vs.
0.16
Temperature (°C)
FIGURE 2-20:
Temperature.
55
0.18
Line Regulation (%/V)
Load Regulation (%)
0.80
FIGURE 2-22:
Temperature.
Load Regulation vs.
1.00
30
Temperature (°C)
Temperature (°C)
FIGURE 2-19:
Temperature.
250 mA
0.12
-30
-40
-50
VR=1.2V
VIN=2.7V
VINAC = 100 mV p-p
CIN=0 μF
IOUT=100 µA
-60
-70
0.02
-80
0.00
-45
-20
5
30
55
80
105
130
-90
0.01
0.1
Temperature (°C)
FIGURE 2-21:
Temperature.
DS22049D-page 8
Line Regulation vs.
FIGURE 2-24:
1
10
Frequency (kHz)
100
1000
PSRR vs. Frequency.
© 2009 Microchip Technology Inc.
MCP1703
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
0
PSRR (dB)
-10
-20
-30
-40
-50
VR=5.0V
VIN=6.0V
VINAC = 100 mV p-p
CIN=0 μF
IOUT=100 µA
-60
-70
-80
-90
0.01
0.1
FIGURE 2-25:
1
10
Frequency (KHz)
1000
PSRR vs. Frequency.
100
VR=5.0V, VIN=6.0V
Noise (µV/ √Hz)
100
FIGURE 2-28:
Dynamic Load Response.
FIGURE 2-29:
Dynamic Load Response.
IOUT=50 mA
10
1
VR=2.8V, VIN=3.8V
0.1
VR=1.2V, VIN=2.7V
0.01
0.001
0.01
0.1
1
10
Frequency (kHz)
100
1000
FIGURE 2-26:
Output Noise vs. Frequency.
FIGURE 2-27:
Power Up Timing.
© 2009 Microchip Technology Inc.
DS22049D-page 9
MCP1703
NOTES:
DS22049D-page 10
© 2009 Microchip Technology Inc.
MCP1703
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
MCP1703 PIN FUNCTION TABLE
Pin No.
2x3 DFN-8
Pin No.
SOT-223-3
Pin No.
SOT-23A
Pin No.
SOT-89-3
Name
4
2,Tab
1
1
GND
Ground Terminal
1
3
2
3
VOUT
Regulated Voltage Output
Function
8
1
3
2,Tab
VIN
Unregulated Supply Voltage
2, 3, 5, 6, 7
—
—
—
NC
No Connection
9
—
—
—
EP
Exposed Thermal Pad (EP); must be
connected to VSS.
3.1
Ground Terminal (GND)
Regulator ground. Tie GND to the negative side of the
output and the negative side of the input capacitor.
Only the LDO bias current (2.0 µA typical) flows out of
this pin; there is no high current. The LDO output
regulation is referenced to this pin. Minimize voltage
drops between this pin and the negative side of the
load.
3.2
Regulated Output Voltage (VOUT)
Connect VOUT to the positive side of the load and the
positive terminal of the output capacitor. The positive
side of the output capacitor should be physically
located as close to the LDO VOUT pin as is practical.
The current flowing out of this pin is equal to the DC
load current.
3.3
Unregulated Input Voltage (VIN)
Connect VIN to the input unregulated source voltage.
Like all low dropout linear regulators, low source
impedance is necessary for the stable operation of the
LDO. The amount of capacitance required to ensure
low source impedance will depend on the proximity of
the input source capacitors or battery type. For most
applications, 1 µF of capacitance will ensure stable
operation of the LDO circuit. For applications that have
load currents below 100 mA, the input capacitance
requirement can be lowered. The type of capacitor
used can be ceramic, tantalum, or aluminum
electrolytic. The low ESR characteristics of the ceramic
will yield better noise and PSRR performance at
high-frequency.
3.4
Exposed Thermal Pad (EP)
There is an internal electrical connection between the
Exposed Thermal Pad (EP) and the VSS pin; they must
be connected to the same potential on the Printed
Circuit Board (PCB).
© 2009 Microchip Technology Inc.
DS22049D-page 11
MCP1703
NOTES:
DS22049D-page 12
© 2009 Microchip Technology Inc.
MCP1703
4.0
DETAILED DESCRIPTION
4.1
Output Regulation
4.3
A portion of the LDO output voltage is fed back to the
internal error amplifier and compared with the precision
internal band-gap reference. The error amplifier output
will adjust the amount of current that flows through the
P-Channel pass transistor, thus regulating the output
voltage to the desired value. Any changes in input
voltage or output current will cause the error amplifier
to respond and adjust the output voltage to the target
voltage (refer to Figure 4-1).
4.2
Overtemperature
The internal power dissipation within the LDO is a
function of input-to-output voltage differential and load
current. If the power dissipation within the LDO is
excessive, the internal junction temperature will rise
above the typical shutdown threshold of 150°C. At that
point, the LDO will shut down and begin to cool to the
typical turn-on junction temperature of 130°C. If the
power dissipation is low enough, the device will
continue to cool and operate normally. If the power
dissipation remains high, the thermal shutdown
protection circuitry will again turn off the LDO,
protecting it from catastrophic failure.
Overcurrent
The MCP1703 internal circuitry monitors the amount of
current flowing through the P-Channel pass transistor.
In the event of a short-circuit or excessive output
current, the MCP1703 will turn off the P-Channel
device for a short period, after which the LDO will
attempt to restart. If the excessive current remains, the
cycle will repeat itself.
MCP1703
VOUT
VIN
Error Amplifier
+VIN
Voltage
Reference
+
Overcurrent
Overtemperature
GND
FIGURE 4-1:
Block Diagram.
© 2009 Microchip Technology Inc.
DS22049D-page 13
MCP1703
NOTES:
DS22049D-page 14
© 2009 Microchip Technology Inc.
MCP1703
5.0
FUNCTIONAL DESCRIPTION
The MCP1703 CMOS low dropout linear regulator is
intended for applications that need the lowest current
consumption while maintaining output voltage
regulation. The operating continuous load range of the
MCP1703 is from 0 mA to 250 mA (VR ≥ 2.5V). The
input operating voltage range is from 2.7V to 16.0V,
making it capable of operating from two or more
alkaline cells or single and multiple Li-Ion cell batteries.
5.1
Input
The input of the MCP1703 is connected to the source
of the P-Channel PMOS pass transistor. As with all
LDO circuits, a relatively low source impedance (10Ω)
is needed to prevent the input impedance from causing
the LDO to become unstable. The size and type of the
capacitor needed depends heavily on the input source
type (battery, power supply) and the output current
range of the application. For most applications (up to
100 mA), a 1 µF ceramic capacitor will be sufficient to
ensure circuit stability. Larger values can be used to
improve circuit AC performance.
5.2
Output
The maximum rated continuous output current for the
MCP1703 is 250 mA (VR ≥ 2.5V). For applications
where VR < 2.5V, the maximum output current is
200 mA.
A minimum output capacitance of 1.0 µF is required for
small signal stability in applications that have up to
250 mA output current capability. The capacitor type
can be ceramic, tantalum, or aluminum electrolytic. The
esr range on the output capacitor can range from 0Ω to
2.0Ω.
The output capacitor range for ceramic capacitors is
1 µF to 22 µF. Higher output capacitance values may
be used for tantalum and electrolytic capacitors. Higher
output capacitor values pull the pole of the LDO
transfer function inward that results in higher phase
shifts which in turn cause a lower crossover frequency.
The circuit designer should verify the stability by
applying line step and load step testing to their system
when using capacitance values greater than 22 µF.
5.3
Output Rise time
When powering up the internal reference output, the
typical output rise time of 1000 µs is controlled to
prevent overshoot of the output voltage.
© 2009 Microchip Technology Inc.
DS22049D-page 15
MCP1703
NOTES:
DS22049D-page 16
© 2009 Microchip Technology Inc.
MCP1703
6.0
APPLICATION CIRCUITS &
ISSUES
6.1
The MCP1703 is most commonly used as a voltage
regulator. Its low quiescent current and low dropout
voltage make it ideal for many battery-powered
applications.
MCP1703
GND
VIN
COUT
1 µF Ceramic
FIGURE 6-1:
6.1.1
VIN
2.7V to 4.8V
VOUT
IOUT
50 mA
T J ( MAX ) = P TOTAL × Rθ JA + T AMAX
Where:
Typical Application
VOUT
1.8V
EQUATION 6-2:
CIN
1 µF Ceramic
Typical Application Circuit.
TJ(MAX)
=
Maximum continuous junction
temperature
PTOTAL
=
Total device power dissipation
RθJA
=
Thermal resistance from
junction-to-ambient
TAMAX
=
Maximum ambient temperature
The maximum power dissipation capability for a
package can be calculated given the junction-toambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION 6-3:
APPLICATION INPUT CONDITIONS
( T J ( MAX ) – T A ( MAX ) )
P D ( MAX ) = --------------------------------------------------Rθ JA
Package Type = SOT-23A
Input Voltage Range = 2.7V to 4.8V
VIN maximum = 4.8V
VOUT typical = 1.8V
IOUT = 50 mA maximum
6.2
Power Calculations
6.2.1
Where:
PD(MAX)
=
Maximum device power dissipation
TJ(MAX)
=
Maximum continuous junction
temperature
TA(MAX)
=
Maximum ambient temperature
RθJA
=
Thermal resistance from
junction-to-ambient
POWER DISSIPATION
The internal power dissipation of the MCP1703 is a
function of input voltage, output voltage and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(2.0 µA x VIN). The following equation can be used to
calculate the internal power dissipation of the LDO.
EQUATION 6-4:
T J ( RISE ) = P D ( MAX ) × Rθ JA
Where:
TJ(RISE)
=
Rise in device junction temperature
over the ambient temperature
PTOTAL
=
Maximum device power dissipation
RθJA
=
Thermal resistance from junction to
ambient
EQUATION 6-1:
P LDO = ( V IN ( MAX ) ) – V OUT ( MIN ) ) × I OUT ( MAX ) )
Where:
PLDO
=
LDO Pass device internal power
dissipation
VIN(MAX)
=
Maximum input voltage
VOUT(MIN)
=
LDO minimum output voltage
EQUATION 6-5:
T J = T J ( RISE ) + T A
Where:
The maximum continuous operating junction
temperature specified for the MCP1703 is +125°C. To
estimate the internal junction temperature of the
MCP1703, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (RθJA). The thermal resistance from junction to
ambient for the SOT-23A pin package is estimated at
336°C/W.
© 2009 Microchip Technology Inc.
TJ
=
Junction Temperature
TJ(RISE)
=
Rise in device junction temperature
over the ambient temperature
TA
=
Ambient temperature
DS22049D-page 17
MCP1703
6.3
Voltage Regulator
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation, as a result of ground current, is small
enough to be neglected.
6.3.1
TJ = TJRISE + TA(MAX)
TJ = 91.3°C
Maximum Package Power Dissipation at +40°C
Ambient Temperature
SOT-23A (336.0°C/Watt = RθJA)
PD(MAX) = (+125°C - 40°C) / 336°C/W
POWER DISSIPATION EXAMPLE
PD(MAX) = 253 milli-Watts
Package
Package Type: SOT-23A
SOT-89 (75°C/Watt = RθJA)
PD(MAX) = (+125°C - 40°C) / 75°C/W
Input Voltage:
VIN = 2.7V to 4.8V
LDO Output Voltages and Currents
PD(MAX) = 1.133 Watts
SOT-223 (62.9°C/Watt = RθJA)
PD(MAX) = (+125°C - 40°C) / 62.9°C/W
VOUT = 1.8V
PD(MAX) = 1.35 Watts
IOUT = 50 mA
Maximum Ambient Temperature
TA(MAX) = +40°C
Internal Power Dissipation
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(VIN to VOUT).
PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX)
PLDO = (4.8V - (0.97 x 1.8V)) x 50 mA
PLDO = 152.7 milli-Watts
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The
thermal resistance from junction to ambient (RθJA) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface mount packages.
The EIA/JEDEC specification is JESD51-7, “High
Effective Thermal Conductivity Test Board for Leaded
Surface Mount Packages”. The standard describes the
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT23 Can Dissipate in an
Application”, (DS00792), for more information
regarding this subject.
TJ(RISE) = PTOTAL x RqJA
TJRISE = 152.7 milli-Watts x 336.0°C/Watt
TJRISE = 51.3°C
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below.
DS22049D-page 18
6.4
Voltage Reference
The MCP1703 can be used not only as a regulator, but
also as a low quiescent current voltage reference. In
many microcontroller applications, the initial accuracy
of the reference can be calibrated using production test
equipment or by using a ratio measurement. When the
initial accuracy is calibrated, the thermal stability and
line regulation tolerance are the only errors introduced
by the MCP1703 LDO. The low-cost, low quiescent
current and small ceramic output capacitor are all
advantages when using the MCP1703 as a voltage
reference.
Ratio Metric Reference
2 µA Bias
CIN
1 µF
PIC®
Microcontroller
MCP1703
VIN
VOUT
GND
COUT
1 µF
VREF
ADO
AD1
Bridge Sensor
FIGURE 6-2:
Using the MCP1703 as a
Voltage Reference.
6.5
Pulsed Load Applications
For some applications, there are pulsed load current
events that may exceed the specified 250 mA
maximum specification of the MCP1703. The internal
current limit of the MCP1703 will prevent high peak
load demands from causing non-recoverable damage.
The 250 mA rating is a maximum average continuous
rating. As long as the average current does not exceed
250 mA, pulsed higher load currents can be applied to
the MCP1703. The typical current limit for the
MCP1703 is 500 mA (TA +25°C).
© 2009 Microchip Technology Inc.
MCP1703
7.0
PACKAGING INFORMATION
7.1
Package Marking Information
3-Pin SOT-23A
Example:
Standard Options for SOT-23A and SOT-89
Extended Temp
XXNN
Symbol
Voltage *
Symbol
Voltage *
HM
1.2
HT
3.0
HP
1.5
HU
3.3
HQ
1.8
HV
4.0
HR
2.5
HW
5.0
HS
2.8
—
—
* Custom output voltages available upon request. Contact
your local Microchip sales office for more information.
3-Lead SOT-89
XXXYYWW
NNN
HWNN
Example:
HM0934
256
Standard Options for SOT-223
Extended Temp
Symbol
3-Lead SOT-223
XXXXXXX
XXXYYWW
NNN
2
Symbol
Voltage *
12
1.2
30
3.0
15
1.5
33
3.3
18
1.8
40
4.0
25
2.5
50
5.0
28
2.8
—
—
* Custom output voltages available upon request. Contact
your local Microchip sales office for more information.
Tab is GND
1
Voltage *
Example:
Tab is GND
MCP1703
15E0934
256
3
Standard Options for 8-Lead DFN (2 x 3)
Extended Temp
8-Lead DFN (2 x 3)
Symbol
Voltage *
Symbol
Example:
Voltage *
AAU
1.2
AAY
3.3
AAV
1.8
AFR
4.0
AAW
2.5
AAZ
5.0
AAT
3.0
—
—
* Custom output voltages available upon request. Contact
your local Microchip sales office for more information.
XXX
YWW
NN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
AAU
934
25
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2009 Microchip Technology Inc.
DS22049D-page 19
MCP1703
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2
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E1
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b
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DS22049D-page 20
© 2009 Microchip Technology Inc.
MCP1703
.# #$ # /
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2
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6, 4 #
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© 2009 Microchip Technology Inc.
DS22049D-page 21
MCP1703
.# #$ # /
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%
! -
/ 0 # 1 /
% # # ! #
D
b2
E1
E
3
2
1
e
e1
A2
A
b
c
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A1
3#
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6, 4 #
=
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4
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4
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DS22049D-page 22
© 2009 Microchip Technology Inc.
MCP1703
.# #$ # /
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© 2009 Microchip Technology Inc.
! -
/ %
0 # 1 /
% # # ! #
DS22049D-page 23
MCP1703
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/ 0 # 1 /
D
% # # ! #
e
b
N
N
L
K
E2
E
EXPOSED PAD
NOTE 1
2
1
NOTE 1
1
2
D2
BOTTOM VIEW
TOP VIEW
A
A3
A1
NOTE 2
3#
4#
5$8 %1
44""
5
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56
7
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:
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DS22049D-page 24
© 2009 Microchip Technology Inc.
MCP1703
# % & ' ()"*++,-$.%&
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! -
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DS22049D-page 25
MCP1703
NOTES:
DS22049D-page 26
© 2009 Microchip Technology Inc.
MCP1703
APPENDIX A:
REVISION HISTORY
Revision D (September 2009)
The following is the list of modifications:
1.
2.
3.
4.
5.
6.
Added the 8-Lead 2x3 DFN package.
Updated the Temperature Specification table.
Updated Table 3-1.
Added Section 3.4 “Exposed Thermal Pad
(EP)”.
Updated the Package Outline Drawings and the
information for the 8-Lead 2x3 DFN package.
Added the information for the 8-Lead 2x3 DFN
package in the Product Identification System
section.
Revision C (June 2009)
The following is the list of modifications:
1.
2.
3.
4.
Absolute Maximum Ratings: Updated this
section.
DC Characteristics table: Updated.
Temperature Specifications table: Updated.
Package Information: Update Package Outline
Drawings.
Revision B (February 2008)
The following is the list of modifications:
1.
2.
3.
4.
Updated Temperature Specifications table.
Updated Table 3-1.
Updated Section 5.2 “Output”.
Added SOT-223 Landing Patterm Outline
drawing.
Revision A (June 2007)
• Original Release of this Document.
© 2009 Microchip Technology Inc.
DS22049D-page 27
MCP1703
NOTES:
DS22049D-page 28
© 2009 Microchip Technology Inc.
MCP1703
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X-
XX
X
X
X/
XX
Tape
Output Feature Tolerance Temp. Package
and Reel Voltage Code
Examples:
a)
b)
c)
Device:
MCP1703: 250 mA, 16V Low Quiescent Current LDO
Tape and Reel:
T
Output Voltage *:
12 = 1.2V “Standard”
15 = 1.5V “Standard”
18 = 1.8V “Standard”
25 = 2.5V “Standard”
28 = 2.8V “Standard”
30 = 3.0V “Standard”
33 = 3.3V “Standard”
40 = 4.0V “Standard”
50 = 5.0V “Standard”
*Contact factory for other output voltage options.
= Tape and Reel
d)
e)
f)
Extra Feature
Code:
0
= Fixed
Tolerance:
2
= 2.0% (Standard)
Temperature:
E
= -40°C to +125°C
Package Type:
CB
DB
MB
MC
=
=
=
=
g)
h)
i)
j)
MCP1703T-1202E/XX: 1.2V Low Quiescent
LDO, Tape and Reel
MCP1703T-1502E/XX: 1.5V Low Quiescent
LDO, Tape and Reel
MCP1703T-1802E/XX: 1.8V Low Quiescent
LDO, Tape and Reel
MCP1703T-2502E/XX: 2.5V Low Quiescent
LDO, Tape and Reel
MCP1703T-2802E/XX: 2.8V Low Quiescent
LDO, Tape and Reel
MCP1703T-3002E/XX: 3.0V Low Quiescent
LDO, Tape and Reel
MCP1703T-3302E/XX: 3.3V Low Quiescent
LDO, Tape and Reel
MCP1703T-3602E/XX: 3.6V Low Quiescent
LDO, Tape and Reel
MCP1703T-4002E/XX: 4.0V Low Quiescent
LDO, Tape and Reel
MCP1703T-5002E/XX: 5.0V Low Quiescent
LDO, Tape and Reel
XX =
=
=
=
CB for 3LD SOT-23A package
DB for 3LD SOT-223 package
MB for 3LD SOT-89 package
MC for 8LD DFN package.
Plastic Small Outline Transistor (SOT-23A) 3-lead,
Plastic Small Outline Transistor (SOT-223) 3-lead,
Plastic Small Outline Transistor (SOT-89) 3-lead.
Plastic Dual Flat, No Lead Package (DFN) 2x3, 8-lead.
© 2009 Microchip Technology Inc.
DS22049D-page 29
MCP1703
NOTES:
DS22049D-page 30
© 2009 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
rfPIC and UNI/O are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified
logo, MPLIB, MPLINK, mTouch, Octopus, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, PIC32 logo, REAL ICE, rfLAB, Select Mode, Total
Endurance, TSHARC, UniWinDriver, WiperLock and ZENA
are trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2009, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2009 Microchip Technology Inc.
DS22049D-page 31
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
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Technical Support:
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Web Address:
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Italy - Milan
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Spain - Madrid
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Tel: 86-756-3210040
Fax: 86-756-3210049
03/26/09
DS22049D-page 32
© 2009 Microchip Technology Inc.