Hynix H5DU1262GTR-FB 128mb ddr sdram Datasheet

128Mb DDR SDRAM
H5DU1262GTR
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 1.0 / May 2009
1
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H5DU1262GTR Series
Revision History
Revision No.
History
Draft Date
0.1
First version
Feb. 2009
1.0
Release
May 2009
Rev. 1.0 / May 2009
Remark
2
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H5DU1262GTR Series
DESCRIPTION
The H5DU1262GTR is a 134,217,728-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main
memory applications which requires large memory density and high bandwidth.
This Hynix 128Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the
clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data,
Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible
with SSTL_2.
FEATURES
•
VDD, VDDQ = 2.3V min ~ 2.7V max
(Typical 2.5V Operation +/- 0.2V for DDR266, 333
,400 and 500)
of the clock
•
All inputs and outputs are compatible with SSTL_2
interface
•
Fully differential clock inputs (CK, /CK) operation
•
Double data rate interface
•
Source synchronous - data transaction aligned to
bidirectional data strobe (DQS)
•
x16 device has two bytewide data strobes (UDQS,
LDQS) per each x8 I/O
•
Data outputs on DQS edges when read (edged DQ)
Data inputs on DQS centers when write (centered
DQ)
•
On chip DLL align DQ and DQS transition with CK
transition
•
DM mask write data-in at the both rising and falling
edges of the data strobe
•
All addresses and control inputs except data, data
strobes and data masks latched on the rising edges
H5DU1262GTR-XXX
Rev. 1.0 / May 2009
Configuration Package
8Mx16
Programmable CAS latency 2/2.5 (DDR266, 333)
and 3/4 (DDR400, 500) supported
•
Programmable burst length 2/4/8 with both sequential and interleave mode
•
Internal four bank operations with single pulsed
/RAS
•
Auto refresh and self refresh supported
•
tRAS lock out function supported
•
4096 refresh cycles/64ms
•
66pin TSOP-II Lead-free and Halogen-free
•
ROHS Compliant
OPERATING FREQUENCY
ORDERING INFORMATION
Part No.
•
66TSOP-II
Grade
Clock Rate
Remark
- FA
250MHz@CL4
DDR500 (4-4-4)
- FB
250MHz@CL4
DDR500 (4-3-3)
- E3
200MHz@CL3
DDR400 (3-3-3)
- E4
200MHz@CL3
DDR400 (3-4-4)
- J3
[email protected]
DDR333 (2.5-3-3)
- K2
133MHz@CL2
DDR266A (2-3-3)
- K3
[email protected]
DDR266B (2.5-3-3)
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H5DU1262GTR Series
PIN CONFIGURATION
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VDDQ
LDQS
NC
VDD
NC
LDM
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
400mil x 875mil
66pin TSOP-II
0.65mm pin pitch
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
NC
VSSQ
UDQS
NC
VREF
VSS
UDM
/CK
CK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
VSS
ROW AND COLUMN ADDRESS INFORMATION
•
Organization : 2M x 16 x 4banks
•
Row Address : A0 - A11
•
Column Address : A0 - A8
•
Bank Address : BA0, BA1
•
Auto Precharge Flag : A10
•
Refresh : 4K
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H5DU1262GTR Series
PIN DESCRIPTION
PIN
TYPE
DESCRIPTION
CK, /CK
Input
Clock: CK and /CK are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and negative edge of /CK. Output
(read) data is referenced to the crossings of CK and /CK (both directions of crossing).
Input
Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock signals, and
device input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER
DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row
ACTIVE in any bank). CKE is synchronous for POWER DOWN entry and exit, and for
SELF REFRESH entry. CKE is asynchronous for SELF REFRESH exit, and for output disable. CKE must be maintained high throughout READ and WRITE accesses. Input buffers, excluding CK, /CK and CKE are disabled during POWER DOWN. Input buffers,
excluding CKE are disabled during SELF REFRESH. CKE is an SSTL_2 input, but will
detect an LVCMOS LOW level after VDD is applied.
/CS
Input
Chip Select: Enables or disables all inputs except CK, /CK, CKE, DQS and DM. All commands are masked when Chip Select is registered high. Chip Select provides for external bank selection on systems with multiple banks. Chip Select is considered part of the
command code.
BA0, BA1
Input
Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE, Read, Write or
PRECHARGE command is being applied.
A0 ~ A11
Input
Address Inputs: Provide the row address for ACTIVE commands, and the column
address and AUTO PRECHARGE bit for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 is sampled during a precharge
command to determine whether the PRECHARGE applies to one bank (A10 LOW) or all
banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by BA0,
BA1. The address inputs also provide the op code during a MODE REGISTER SET command. BA0 and BA1 define which mode register is loaded during the MODE REGISTER
SET command (MRS or EMRS).
/RAS, /CAS, /
WE
Input
Command Inputs: /RAS, /CAS and /WE (along with /CS) define the command being
entered.
DM
(LDM,UDM)
Input
Input Data Mask: DM is an input mask signal for write data. Input data is masked when
DM is sampled HIGH along with that input data during a WRITE access. DM is sampled
on both edges of DQS. Although DM pins are input only, the DM loading matches the
DQ and DQS loading. For the x16, LDM corresponds to the data on DQ0-Q7; UDM corresponds to the data on DQ8-Q15.
DQS
(LDQS,UDQS)
I/O
Data Strobe: Output with read data, input with write data. Edge aligned with read data,
centered in write data. Used to capture write data. For the x16, LDQS corresponds to
the data on DQ0-Q7; UDQS corresponds to the data on DQ8-Q15.
DQ
I/O
Data input / output pin: Data bus
VDD / VSS
Supply
Power supply for internal circuits and input buffers.
VDDQ / VSSQ
Supply
Power supply for output buffers for noise immunity.
VREF
Supply
Reference voltage for inputs for SSTL interface.
NC
NC
CKE
Rev. 1.0 / May 2009
No connection.
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H5DU1262GTR Series
Functinal Block Diagram (8M x16)
4Banks x 2Mbit x 16I/O Double Data Rate Syncronous DRAM
16
32
Input Buffer
Write Data Register
Mode
2-bit
Prefetch Unit
Register
DS
2Mx16 BANK 3
2Mx16 BANK 2
2Mx16 BANK 0
Mode
Register
Row
Decoder
Memory
Cell
Array
32
Output Buffer
Command
Decoder
2Mx16 BANK 1
DQ0
2-bit Prefetch Unit
Bank
Control
Sense
Sense
AMPAMP
Sense
Sense
AMP
AMP
CLK
/CLK
CKE
/CS
/RAS
/CAS
/WE
LDM
UDM
16
DQ15
Column
Decoder
A0
A1
Address
Buffer
Amax
BA0
BA1
CLK_DLL
Column Address
Decoder
CLK,
/CLK
LDQS,
UDQS
DLL
Block
LDQS,
UDQS
Data Strobe
Transmitter
Data Strobe
Receiver
Mode
Register
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H5DU1262GTR Series
SIMPLIFIED COMMAND TRUTH TABLE
CKEn-1
CKEn
CS
RAS
CAS
WE
Extended Mode Register
Set
H
X
L
L
L
L
OP code
1,2
Mode Register Set
H
X
L
L
L
L
OP code
1,2
H
X
H
X
X
X
L
H
H
H
X
1
H
X
L
L
H
H
H
X
L
H
L
H
CA
H
X
L
H
L
L
CA
H
X
L
L
H
L
X
Read Burst Stop
H
X
L
H
H
L
X
1
Auto Refresh
H
H
L
L
L
H
X
1
Entry
H
L
L
L
L
H
Exit
L
H
H
X
X
X
L
H
H
H
Entry
H
L
H
X
X
X
L
H
H
H
H
X
X
X
L
H
H
H
1
H
X
X
X
1
L
V
V
V
Device Deselect
No Operation
Bank Active
Read
Read with Autoprecharge
Write
Write with Autoprecharge
Precharge All Banks
Precharge selected Bank
Self Refresh
Precharge
Power Down
Mode
Active Power
Down Mode
Exit
L
H
Entry
H
L
Exit
L
H
X
ADDR
A10
/AP
Command
RA
BA
V
L
H
L
H
V
V
Note
1
1
1,3
1
1,4
H
X
1,5
L
V
1
1
X
1
1
X
X
1
1
1
1
( H=Logic High Level, L=Logic Low Level, X=Don’t Care, V=Valid Data Input, OP Code=Operand Code, NOP=No Operation )
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H5DU1262GTR Series
Note :
1. UDM, LDM states are Don’t Care. Refer to below Write Mask Truth Table.(note 6)
2. OP Code(Operand Code) consists of A0~A11 and BA0~BA1 used for Mode Register setting during Extended MRS or MRS. Before
entering Mode Register Set mode, all banks must be in a precharge state and MRS command can be issued after tRP period from
Prechagre command.
3. If a Read with Auto-precharge command is detected by memory component in CK(n), then there will be no command presented
to activate bank until CK(n+BL/2+tRP).
4. If a Write with Auto-precharge command is detected by memory component in CK(n), then there will be no command presented
to activate bank until CK(n+BL/2+1+tDPL+tRP). Last Data-In to Prechage delay(tDPL) which is also called Write Recovery
Time(tWR) is needed to guarantee that the last data have been completely written.
5. If A10/AP is High when Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be precharged.
6. In here, Don’t Care means logical value only, it doesn’t mean ’Don’t care for DC level of each signals’. DC level should be out of
VIHmin ~ VILmax
WRITE MASK TRUTH TABLE
CKEn-1
CKEn
/CS, /RAS,
/CAS, /WE
DM
Data Write
H
X
X
L
X
1,2
Data-In Mask
H
X
X
H
X
1,2
Function
ADD
R
A10/
AP
BA
Note
Note :
1. Write Mask command masks burst write data with reference to LDQS/UDQS(Data Strobes) and it is not related with read data.
In case of x16 data I/O, LDM and UDM control lower byte(DQ0~7) and Upper byte(DQ8~15) respectively.
2. In here, Don’t Care means logical value only, it doesn’t mean ’Don’t care for DC level of each signals’. DC level should be out of
VIHmin ~ VILmax
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H5DU1262GTR Series
SIMPLIFIED STATE DIAGRAM
MRS
MODE
REGISTER
SET
SREF
SELF
REFRESH
IDLE
SREX
PDEN
PDEX
AREF
ACT
POWER
DOWN
POWER
DOWN
AUTO
REFRESH
PDEN
BST
PDEX
BANK
ACTIVE
READ
WRITE
READ
WRITE
WRITEAP
WRITE
WITH
AUTOPRECHARGE
PRE(PALL)
READAP
READ
READAP
WITH
AUTOPRECHARGE WRITEAP
READ
WRITE
PRE(PALL)
PRE(PALL)
PRECHARGE
POWER-UP
Command Input
Automatic Sequence
POWER APPLIED
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H5DU1262GTR Series
POWER-UP SEQUENCE AND DEVICE INITIALIZATION
DDR SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those
specified may result in undefined operation. Power must first be applied to VDD, then to VDDQ, and finally to VREF
(and to the system VTT). VTT must be applied after VDDQ to avoid device latch-up, which may cause permanent damage to the device. VREF can be applied anytime after VDDQ, but is expected to be nominally coincident with VTT.
Except for CKE, inputs are not recognized as valid until after VREF is applied. CKE is an SSTL_2 input, but will detect an
LVCMOS LOW level after VDD is applied. Maintaining an LVCMOS LOW level on CKE during power-up is required to
guarantee that the DQ and DQS outputs will be in the High-Z state, where they will remain until driven in normal operation (by a read access). After all power supply and reference voltages are stable, and the clock is stable, the DDR
SDRAM requires a 200us delay prior to applying an executable command.
Once the 200us delay has been satisfied, a DESELECT or NOP command should be applied, and CKE should be
brought HIGH. Following the NOP command, a PRECHARGE ALL command should be applied. Next a EXTENDED
MODE REGISTER SET command should be issued for the Extended Mode Register, to enable the DLL, then a MODE
REGISTER SET command should be issued for the Mode Register, to reset the DLL, and to program the operating
parameters. After the DLL reset, tXSRD(DLL locking time) should be satisfied for read command. After the Mode Register set command, a PRECHARGE ALL command should be applied, placing the device in the all banks idle state.
Once in the idle state, two AUTO REFRESH cycles must be performed. Additionally, a MODE REGISTER SET command
for the Mode Register, with the reset DLL bit deactivated low (i.e. to program operating parameters without resetting
the DLL) must be performed. Following these cycles, the DDR SDRAM is ready for normal operation.
1.
Apply power - VDD, VDDQ, VTT, VREF in the following power up sequencing and attempt to maintain CKE at LVCMOS low state. (All the other input pins may be undefined.)
• VDD and VDDQ are driven from a single power converter output.
• VTT is limited to 1.44V (reflecting VDDQ(max)/2 + 50mV VREF variation + 40mV VTT variation.
• VREF tracks VDDQ/2.
• If the above criteria cannot be met by the system design, then the following sequencing and voltage relationship must be adhered to during power up.
Voltage description
Sequencing
Voltage relationship to avoid latch-up
VDDQ
After or with VDD
< VDD + 0.3V
VTT
After or with VDDQ
< VDDQ + 0.3V
VREF
After or with VDDQ
< VDDQ + 0.3V
2.
Start clock and maintain stable clock for a minimum of 200usec.
3.
After stable power and clock, apply NOP condition and take CKE high.
4.
Issue Extended Mode Register Set (EMRS) to enable DLL.
5.
Issue Mode Register Set (MRS) to reset DLL and set device to idle state with bit A8=high. (An additional 200
cycles(tXSRD) of clock are required for locking DLL)
6.
Issue Precharge commands for all banks of the device.
7.
Issue 2 or more Auto Refresh commands.
8.
Issue a Mode Register Set command to initialize the mode register with bit A8 = Low
Rev. 1.0 / May 2009
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H5DU1262GTR Series
Power-Up Sequence
VDD
VDDQ
tVTD
VTT
VREF
/CLK
CLK
tIS tIH
CKE
LVCMOS Low Level
CMD
NOP
PRE
EMRS
MRS
ADDR
CODE
A10
BA0, BA1
NOP
PRE
AREF
MRS
ACT
RD
CODE
CODE
CODE
CODE
CODE
CODE
CODE
CODE
CODE
CODE
CODE
CODE
CODE
CODE
Non-Read
Command
READ
DM
DQS
DQ'S
T=200usec
tRP
tMRD
tMRD
tRP
tRFC
tMRD
tXSRD*
Power UP
VDD and CK stable
Precharge All
EMRS Set
MRS Set
Reset DLL
(with A8=H)
Precharge All
2 or more
Auto Refresh
MRS Set
(with A8=L)
* 200 cycle(tXSRD) of CK are required (for DLL locking) before Read Command
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H5DU1262GTR Series
MODE REGISTER SET (MRS)
The mode register is used to store the various operating modes such as /CAS latency, addressing mode, burst length,
burst type, test mode, DLL reset. The mode register is programed via MRS command. This command is issued by the
low signals of /RAS, /CAS, /CS, /WE and BA0. This command can be issued only when all banks are in idle state and
CKE must be high at least one cycle before the Mode Register Set Command can be issued. Two cycles are required to
write the data in mode register. During the MRS cycle, any command cannot be issued. Once mode register field is
determined, the information will be held until reset by another MRS command.
BA1
BA0
0
0
A11
A10
A9
A8
A7
A6
Operating Mode
A5
A4
A3
CAS Latency
A2
BT
A1
Burst Length
BA0
MRS Type
A6
A5
A4
CAS Latency
A3
Burst Type
0
MRS
0
0
0
Reserved
0
Sequential
1
EMRS
0
0
1
Reserved
1
Interleave
0
1
0
2
0
1
1
3
1
0
0
4
1
0
1
1.5
1
1
0
2.5
1
1
1
Reserved
A12~A9 A8
A7 A6~A0
Operating Mode
0
0
0
Valid
Normal Operation
0
1
0
Valid
Normal Operation/ Reset DLL
0
0
1
VS
Vendor specific Test Mode
-
-
-
-
All other states reserved
Rev. 1.0 / May 2009
A2
A1
A0
0
0
0
A0
Burst Length
Sequential
Interleave
0
Reserved
Reserved
0
1
2
2
0
1
0
4
4
0
1
1
8
8
1
0
0
Reserved
Reserved
1
0
1
Reserved
Reserved
1
1
0
Reserved
Reserved
1
1
1
Reserved
Reserved
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H5DU1262GTR Series
BURST DEFINITION
Burst Length
2
4
8
Starting Address
(A2,A1,A0)
Sequential
Interleave
XX0
0, 1
0, 1
XX1
1, 0
1, 0
X00
0, 1, 2, 3
0, 1, 2, 3
X01
1, 2, 3, 0
1, 0, 3, 2
X10
2, 3, 0, 1
2, 3, 0, 1
X11
3, 0, 1, 2
3, 2, 1, 0
000
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 4, 5, 6, 7, 0
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 4, 5, 6, 7, 0, 1
2, 3, 0, 1, 6, 7, 4, 5
011
3, 4, 5, 6, 7, 0, 1, 2
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6, 7, 0, 1, 2, 3, 4
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7, 0, 1, 2, 3, 4, 5
6, 7, 4, 5, 2, 3, 0, 1
111
7, 0, 1, 2, 3, 4, 5, 6
7, 6, 5, 4, 3, 2, 1, 0
BURST LENGTH & TYPE
Read and write accesses to the DDR SDRAM are burst oriented, with the burst length being programmable. The burst
length determines the maximum number of column locations that can be accessed for a given Read or Write command. Burst lengths of 2, 4 or 8 locations are available for both the sequential and the interleaved burst types.
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
When a Read or Write command is issued, a block of columns equal to the burst length is effectively selected. All
accesses for that burst take place within this block, meaning that the burst wraps within the block if a boundary is
reached. The block is uniquely selected by A1-Ai when the burst length is set to two, by A2 -Ai when the burst length
is set to four and by A3 -Ai when the burst length is set to eight (where Ai is the most significant column address bit
for a given configuration). The remaining (least significant) address bit(s) is (are) used to select the starting location
within the block. The programmed burst length applies to both Read and Write bursts.
Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the
burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the
burst type and the starting column address, as shown in Burst Definition Table
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H5DU1262GTR Series
CAS LATENCY
The Read latency or CAS latency is the delay in clock cycles between the registration of a Read command and the
availability of the first burst of output data. The latency can be programmed 2 or 2.5 clocks for DDR266/333 and 3 or
4 clocks for DDR400 and DDR500 product.
If a Read command is registered at clock edge n, and the latency is m clocks, the data is available nominally coincident
with clock edge n + m.
Reserved states should not be used as unknown operation or incompatibility with future versions may result.
DLL RESET
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon returning to normal operation after having disabled the DLL for the purpose of debug or evaluation. The DLL is automatically
disabled when entering self refresh operation and is automatically re-enabled upon exit of self refresh operation. Any
time the DLL is enabled, 200 clock cycles must occur to allow time for the internal clock to lock to the externally
applied clock before an any command can be issued.
OUTPUT DRIVER IMPEDANCE CONTROL
The normal drive strength for all outputs is specified to be SSTL_2, Class II. Hynix also supports a half strength driver
option, intended for lighter load and/or point-to-point environments. Selection of the half strength driver option will
reduce the output drive strength by 50% of that of the full strength driver. I-V curves for both the full strength driver
and the half strength driver are included in this document.
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H5DU1262GTR Series
EXTENDED MODE REGISTER SET (EMRS)
The Extended Mode Register controls functions beyond those controlled by the Mode Register; these additional functions include DLL enable/disable, output driver strength selection(optional). These functions are controlled via the bits
shown below. The Extended Mode Register is programmed via the Mode Register Set command (BA0=1 and BA1=0)
and will retain the stored information until it is programmed again or the device loses power.
The Extended Mode Register must be loaded when all banks are idle and no bursts are in progress, and the controller
must wait the specified time before initiating any subsequent operation. Violating either of these requirements will
result in unspecified operation.
BA1
BA0
0
1
A11
A10
A9
A8
A7
A6
A5
A4
Operating Mode
BA0
MRS Type
0
MRS
1
EMRS
An~A3
A2~A0
Operating Mode
0
Valid
Normal Operation
_
_
All other states reserved
A3
A2
A1
A0
0*
DS
DLL
A0
DLL enable
0
Enable
1
Disable
A1
Output Driver
Impedance Control
0
Full Strength Driver
1
Half Strength Driver
* This part do not support/QFC function, A2 must be programmed to Zero.
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H5DU1262GTR Series
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
TA
0 ~ 70
TSTG
-55 ~ 150
oC
VDD
VDDQ
VINPUT
VIO
IOS
-1.0 ~ 3.6
-1.0 ~ 3.6
-1.0 ~ 3.6
-0.5 ~3.6
50
V
V
V
V
mA
TSOLDER
260 ⋅ 10
Operating Temperature (Ambient)
Storage Temperature
Voltage on VDD relative to VSS
Voltage on VDDQ relative to VSS
Voltage on inputs relative to VSS
Voltage on I/O pins relative to VSS
Output Short Circuit Current
Soldering Temperature ⋅ Time
Unit
o
C
o
C ⋅ Sec
Note: Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V)
Parameter
Power Supply Voltage (DDR266, 333, 400, 500)
1
Power Supply Voltage (DDR266, 333, 400, 500)
Input High Voltage
Input Low Voltage2
Termination Voltage
Symbol
Min
Typ.
Max
Unit
VDD
2.3
2.5
2.7
VDDQ
2.3
2.5
2.7
V
V
VIH
VIL
VREF + 0.15
-0.3
-
VDDQ + 0.3
VREF - 0.15
V
V
VTT
VREF
VREF - 0.04
0.49*VDDQ
VREF
0.5*VDDQ
VREF + 0.04
0.51*VDDQ
V
V
Reference Voltage3
Input Voltage Level, CK and CK inputs
VIN(DC)
-0.3
-
VDDQ+0.3
V
Input Differential Voltage, CK and CK inputs4
VID(DC)
0.36
-
VDDQ+0.6
V
VI(RATIO)
0.71
-
1.4
-
ILI
-2
-
2
uA
ILO
-5
-
5
uA
IOH
-16.8
-
-
mA
IOL
16.8
-
-
mA
IOH
-13.6
-
-
mA
IOL
13.6
-
-
mA
V-I Matching: Pullup to Pulldown Current
Input Leakage
Ratio5
Current6
Output Leakage Current7
Output High Current
Normal Strength (min VDDQ, min VREF, min
Output Driver
VTT)
(VOUT=VTT ±
Output Low Current
(min VDDQ, max VREF, max
0.84)
VTT)
Output High Current
Half Strength
(min VDDQ, min VREF, min
Output Driver
VTT)
(VOUT=VTT ±
Output Low Current
(min VDDQ, max VREF, max
0.68)
VTT)
Note:
1. VDDQ must not exceed the level of VDD.
2. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration.
3. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same.
Peak to peak noise on VREF may not exceed ± 2% of the DC value.
4. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
Rev. 1.0 / May 2009
16
PPre
H5DU1262GTR Series
5. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum
pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
6. VIN=0 to VDD, All other pins are not tested under VIN =0V.
7. DQs are disabled, VOUT=0 to VDDQ
IDD SPECIFICATION AND CONDITIONS
(TA=0 to 70 oC, Voltage referenced to VSS = 0V)
Test Conditions
Test Condition
Operating Current:
One bank; Active - Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs changing twice
per clock cycle; address and control inputs changing once per clock cycle
Operating Current:
One bank; Active - Read - Precharge;
Burst Length=2; tRC=tRC(min); tCK=tCK(min); address and control inputs changing once per clock
cycle
Precharge Power Down Standby Current:
All banks idle; Power down mode; CKE=Low, tCK=tCK(min)
Idle Standby Current:
/CS=High, All banks idle; tCK=tCK(min);
CKE=High; address and control inputs changing once per clock cycle.
VIN=VREF for DQ, DQS and DM
Idle Quiet Standby Current:
/CS>=Vih(min); All banks idle; CKE>=Vih(min); Addresses and other control inputs stable, Vin=Vref
for DQ, DQS and DM
Active Power Down Standby Current:
One bank active; Power down mode; CKE=Low, tCK=tCK(min)
Active Standby Current:
/CS=HIGH; CKE=HIGH; One bank; Active-Precharge; tRC=tRAS(max); tCK=tCK(min);
DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing
once per clock cycle
Operating Current:
Burst=2; Reads; Continuous burst; One bank active; Address and control inputs changing once per
clock cycle; tCK=tCK(min); IOUT=0mA
Operating Current:
Burst=2; Writes; Continuous burst; One bank active; Address and control inputs changing once per
clock cycle; tCK=tCK(min); DQ, DM and DQS inputs changing twice per clock cycle
Auto Refresh Current:
tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz, 10*tCK for DDR266A & DDR266B at 133Mhz; distributed
refresh
tRC=tRFC(min) - 14*tCK for DDR400 at 200Mhz
Self Refresh Current:
CKE =< 0.2V; External clock on; tCK=tCK(min)
Operating Current - Four Bank Operation:
Four bank interleaving with BL=4, Refer to the following page for detailed test condition
Rev. 1.0 / May 2009
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7
17
PPre
H5DU1262GTR Series
DC CHARACTERISTICS II
(TA=0 to 70 oC, Voltage referenced to VSS = 0V)
8Mx16 (2M x4Bank x16I/O)
Speed
Parameter
Symbol
Test Condition
FA
FB
Unit
250
MHz
IDD0
One bank; Active - Precharge ; tRC=tRC(min);
tCK=tCK(min) ; DQ,DM and DQS inputs changing
twice per clock cycle; address and control inputs
changing once per clock cycle
130
mA
Operating
Current
IDD1
One bank; Active - Read - Precharge;
Burst Length=2; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once per clock
cycle
140
mA
Precharge
Power Down
Standby
Current
IDD2P
All banks idle; Power down mode; CKE=Low,
tCK=tCK(min)
10
mA
Idle Standby
Current
/CS=High, All banks idle; tCK=tCK(min);
CKE=High; address and control inputs changing
IDD2F
once per clock cycle.
VIN=VREF for DQ, DQS and DM
70
mA
Idle Quiet
Standby
Current
/CS>=VIH(min); All banks idle; CKE>=VIH(min);
IDD2Q Addresses and other control inputs stable,
VIN=Vref for DQ, DQS and DM
70
mA
Active Power
Down
Standby
Current
IDD3P
20
mA
Active
Standby
Current
/CS=HIGH; CKE=HIGH; One bank; ActivePrecharge; tRC=tRAS(max); tCK=tCK(min);
IDD3N DQ, DM and DQS inputs changing twice per clock
cycle; Address and other control inputs changing
once per clock cycle
70
mA
Operating
Current
Rev. 1.0 / May 2009
One bank active; Power down mode; CKE=Low,
tCK=tCK(min)
Note
18
PPre
H5DU1262GTR Series
- Continue
Speed
Parameter
Symbol
Test Condition
FA
FB
250
Operating
Current
Burst=2; Reads; Continuous burst; One bank
IDD4R active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); IOUT=0mA
Operating
Current
Burst=2; Writes; Continuous burst; One bank
active; Address and control inputs changing once
IDD4W
per clock cycle; tCK=tCK(min); DQ, DM and DQS
inputs changing twice per clock cycle
Unit
MHz
210
mA
210
Auto Refresh
Current
IDD5
tRC=tRFC(min) - 14*tCK for DDR400 at 200Mhz
210
mA
Self Refresh
Current
IDD6
CKE =< 0.2V; External clock on; tCK=tCK(min)
3
mA
Operating
Current Four Bank
Operation
IDD7
Four bank interleaving with BL=4, Refer to the
following page for detailed test condition
300
mA
Rev. 1.0 / May 2009
Note
19
PPre
H5DU1262GTR Series
DC CHARACTERISTICS II
(TA=0 to 70 oC, Voltage referenced to VSS = 0V)
8Mx16 (2M x4Bank x16I/O)
Speed
Parameter
Symbol
Test Condition
E3
E4
Unit
200
MHz
120
mA
Operating
Current
IDD0
One bank; Active - Precharge ; tRC=tRC(min);
tCK=tCK(min) ; DQ,DM and DQS inputs changing twice per
clock cycle; address and control inputs changing once per
clock cycle
Operating
Current
IDD1
One bank; Active - Read - Precharge;
Burst Length=2; tRC=tRC(min); tCK=tCK(min); address
and control inputs changing once per clock cycle
120
mA
Precharge
Power Down
Standby
Current
IDD2P
All banks idle; Power down mode; CKE=Low, tCK=tCK(min)
10
mA
Idle Standby
Current
IDD2F
/CS=High, All banks idle; tCK=tCK(min);
CKE=High; address and control inputs changing once per
clock cycle.
VIN=VREF for DQ, DQS and DM
60
mA
Idle Quiet
Standby
Current
IDD2Q
/CS>=VIH(min); All banks idle; CKE>=VIH(min);
Addresses and other control inputs stable, VIN=Vref for
DQ, DQS and DM
60
mA
Active Power
Down
Standby
Current
IDD3P
One bank active; Power down mode; CKE=Low,
tCK=tCK(min)
20
mA
IDD3N
/CS=HIGH; CKE=HIGH; One bank; Active-Precharge;
tRC=tRAS(max); tCK=tCK(min);
DQ, DM and DQS inputs changing twice per clock cycle;
Address and other control inputs changing once per clock
cycle
70
mA
Active Standby
Current
Rev. 1.0 / May 2009
Note
20
PPre
H5DU1262GTR Series
- Continue
Speed
Parameter
Symbol
Test Condition
E3
E4
200
Operating
Current
Operating
Current
IDD4R
Burst=2; Reads; Continuous burst; One bank active;
Address and control inputs changing once per clock cycle;
tCK=tCK(min); IOUT=0mA
IDD4W
Burst=2; Writes; Continuous burst; One bank active;
Address and control inputs changing once per clock cycle;
tCK=tCK(min); DQ, DM and DQS inputs changing twice per
clock cycle
200
Unit
MHz
200
mA
Auto Refresh
Current
IDD5
tRC=tRFC(min) - 14*tCK for DDR400 at 200Mhz
200
mA
Self Refresh
Current
IDD6
CKE =< 0.2V; External clock on; tCK=tCK(min)
3
mA
Operating
Current - Four
Bank
Operation
IDD7
Four bank interleaving with BL=4, Refer to the following
page for detailed test condition
300
mA
Rev. 1.0 / May 2009
Note
21
PPre
H5DU1262GTR Series
DC CHARACTERISTICS II
(TA=0 to 70 oC, Voltage referenced to VSS = 0V)
8Mx16 (2M x4Bank x16I/O)
Speed
Parameter
Symbol
Test Condition
Unit
J3
K2
K3
166
133
133
MHz
110
100
100
mA
Operating
Current
IDD0
One bank; Active - Precharge ; tRC=tRC(min);
tCK=tCK(min) ; DQ,DM and DQS inputs changing twice
per clock cycle; address and control inputs changing
once per clock cycle
Operating
Current
IDD1
One bank; Active - Read - Precharge;
Burst Length=2; tRC=tRC(min); tCK=tCK(min); address
and control inputs changing once per clock cycle
110
100
100
mA
Precharge
Power Down
Standby
Current
IDD2P
All banks idle; Power down mode; CKE=Low,
tCK=tCK(min)
10
10
10
mA
Idle Standby
Current
IDD2F
/CS=High, All banks idle; tCK=tCK(min);
CKE=High; address and control inputs changing once
per clock cycle.
VIN=VREF for DQ, DQS and DM
50
45
45
mA
Idle Quiet
Standby
Current
IDD2Q
/CS>=VIH(min); All banks idle; CKE>=VIH(min);
Addresses and other control inputs stable, VIN=Vref for
DQ, DQS and DM
60
60
60
mA
Active Power
Down
Standby
Current
IDD3P
One bank active; Power down mode; CKE=Low,
tCK=tCK(min)
20
20
20
mA
IDD3N
/CS=HIGH; CKE=HIGH; One bank; Active-Precharge;
tRC=tRAS(max); tCK=tCK(min);
DQ, DM and DQS inputs changing twice per clock cycle;
Address and other control inputs changing once per
clock cycle
60
50
50
mA
Active
Standby
Current
Rev. 1.0 / May 2009
Note
22
PPre
H5DU1262GTR Series
- Continue
Speed
Parameter
Operating
Current
Operating
Current
Symbol
Test Condition
J3
K2
K3
166
133
133
160
150
150
IDD4R
Burst=2; Reads; Continuous burst; One bank active;
Address and control inputs changing once per clock
cycle; tCK=tCK(min); IOUT=0mA
IDD4W
Burst=2; Writes; Continuous burst; One bank active;
Address and control inputs changing once per clock
cycle; tCK=tCK(min); DQ, DM and DQS inputs
changing twice per clock cycle
160
150
150
Unit
MHz
mA
Auto Refresh
Current
IDD5
tRC=tRFC(min) - 14*tCK for DDR400 at 200Mhz
180
170
170
mA
Self Refresh
Current
IDD6
CKE =< 0.2V; External clock on; tCK=tCK(min)
3
3
3
mA
Operating
Current Four Bank
Operation
IDD7
Four bank interleaving with BL=4, Refer to the
following page for detailed test condition
250
230
230
mA
Rev. 1.0 / May 2009
Note
23
PPre
H5DU1262GTR Series
DETAILED TEST CONDITIONS FOR DDR SDRAM IDD1 & IDD7
IDD1 : Operating current: One bank operation
1. Typical Case : VDD = 2.6V, T=25 oC
2. Worst Case : VDD = 2.7V, T= 0 oC
3. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are
changing once per clock cycle. lout = 0mA
4. Timing patterns
- DDR400(200Mhz, CL=3) : tCK = 5ns, CL = 3, BL = 4, tRCD = 3*tCK, tRC = 11*tCK, tRAS = 8*tCK
Read : A0 N N R0 N N N P0 N N A0 N - repeat the same timing with random add
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
IDD7 : Operating current: Four bank operation
1. Typical Case : VDD = 2.6V, T=25 oC
2. Worst Case : VDD= 2.7V, T= 0 oC
3. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not
changing. lout = 0mA
4. Timing patterns
- DDR400(200Mhz, CL=3) : tCK = 5ns, CL = 3, BL = 4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
50% of data changing at every burst
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
Rev. 1.0 / May 2009
24
PPre
H5DU1262GTR Series
AC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Min
Max
Unit
Input High (Logic 1) Voltage, DQ, DQS and DM signals
VIH(AC)
VREF + 0.31
-
V
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
VIL(AC)
-
VREF - 0.31
V
Input Differential Voltage, CK and /CK inputs1
VID(AC)
0.7
VDDQ + 0.6
V
Input Crossing Point Voltage, CK and /CK inputs2
VIX(AC)
0.5*VDDQ-0.2
0.5*VDDQ+0.2
V
Note:
1. VID is the magnitude of the difference between the input level on CK and the input on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same.
*For more information about AC Overshoot/Undershoot Specifications, refer to “Device Operation” section in hynix website.
AC OPERATING TEST CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Parameter
Value
Unit
Reference Voltage
VDDQ x 0.5
V
Termination Voltage
VDDQ x 0.5
V
AC Input High Level Voltage (VIH, min)
VREF + 0.31
V
AC Input Low Level Voltage (VIL, max)
VREF - 0.31
V
Input Timing Measurement Reference Level Voltage
VREF
V
Output Timing Measurement Reference Level Voltage
VTT
V
Input Signal maximum peak swing
1.5
V
Input minimum Signal Slew Rate
1
V/ns
Termination Resistor (RT)
50
Ω
Series Resistor (RS)
25
W
Output Load Capacitance for Access Time Measurement (CL)
30
pF
Rev. 1.0 / May 2009
25
PPre
H5DU1262GTR Series
- Continue
Parameter
Symbol
FA
FB
Min
Max
Min
Max
UNIT
Row Cycle Time
tRC
52
-
52
-
ns
Auto Refresh Row Cycle Time
tRFC
60
-
60
-
ns
Row Active Time
tRAS
40
70K
40
70K
ns
Active to Read with Auto Precharge Delay
tRAP
tRCD or
tRAS(min)
-
tRCD or
tRAS(min)
-
ns
Row Address to Column Address Delay
tRCD
16
-
12
-
ns
Row Active to Row Active Delay
tRRD
12
-
12
-
ns
Column Address to Column Address Delay
tCCD
1
-
1
-
tCK
Row Precharge Time
tRP
16
-
12
-
ns
Write Recovery Time
tWR
15
-
15
-
ns
Internal Write to Read Command Delay
tWTR
2
-
2
-
tCK
Auto Precharge Write Recovery +
Precharge Time22
tDAL
(tWR/tCK)
+
(tRP/tCK)
-
(tWR/tCK)
+
(tRP/tCK)
-
tCK
4
10
4
10
-
-
-
-
-
-
-
-
System Clock Cycle
Time24
CL = 4
CL = 3
tCK
CL = 2
ns
Clock High Level Width
tCH
0.45
0.55
0.45
0.55
tCK
Clock Low Level Width
tCL
0.45
0.55
0.45
0.55
tCK
Data-Out edge to Clock edge Skew
tAC
-0.6
0.6
-0.6
0.6
ns
DQS-Out edge to Clock edge Skew
tDQSCK
-0.6
0.6
-0.6
0.6
ns
tDQSQ
-
0.4
-
0.4
ns
Data-Out hold time from DQS20
tQH
tHP
-tQHS
-
tHP
-tQHS
-
ns
Clock Half Period19,20
tHP
min
(tCL,tCH)
-
min
(tCL,tCH)
-
ns
tQHS
-
0.5
-
0.5
ns
DQS-Out edge to Data-Out edge
Data Hold Skew Factor20
Valid Data Output Window
Rev. 1.0 / May 2009
Skew21
tDV
tQH - tDQSQ
tQH - tDQSQ
ns
26
PPre
H5DU1262GTR Series
- Continue
Parameter
Symbol
E3
E4
Min
Max
Min
Max
UNIT
Row Cycle Time
tRC
55
-
60
-
ns
Auto Refresh Row Cycle Time
tRFC
70
-
70
-
ns
Row Active Time
tRAS
40
70K
40
70K
ns
Active to Read with Auto Precharge Delay
tRAP
tRCD or
tRAS(min)
-
tRCD or
tRAS(min)
-
ns
Row Address to Column Address Delay
tRCD
15
-
18
-
ns
Row Active to Row Active Delay
tRRD
10
-
10
-
ns
Column Address to Column Address Delay
tCCD
1
-
1
-
tCK
Row Precharge Time
tRP
15
-
18
-
ns
Write Recovery Time
tWR
15
-
15
-
ns
Internal Write to Read Command Delay
tWTR
2
-
2
-
tCK
Auto Precharge Write Recovery +
Precharge Time22
tDAL
(tWR/tCK)
+
(tRP/tCK)
-
(tWR/tCK)
+
(tRP/tCK)
-
tCK
-
-
-
-
5
10
5
10
7.5
12
7.5
12
System Clock Cycle
Time24
CL = 4
CL = 3
tCK
CL = 2
ns
Clock High Level Width
tCH
0.45
0.55
0.45
0.55
tCK
Clock Low Level Width
tCL
0.45
0.55
0.45
0.55
tCK
Data-Out edge to Clock edge Skew
tAC
-0.7
0.7
-0.7
0.7
ns
DQS-Out edge to Clock edge Skew
tDQSCK
-0.55
0.55
-0.65
0.65
ns
tDQSQ
-
0.4
-
0.4
ns
Data-Out hold time from DQS20
tQH
tHP
-tQHS
-
tHP
-tQHS
-
ns
Clock Half Period19,20
tHP
min
(tCL,tCH)
-
min
(tCL,tCH)
-
ns
tQHS
-
0.5
-
0.5
ns
DQS-Out edge to Data-Out edge
Data Hold Skew Factor20
Valid Data Output Window
Rev. 1.0 / May 2009
Skew21
tDV
tQH - tDQSQ
tQH - tDQSQ
ns
27
PPre
H5DU1262GTR Series
- Continue
Parameter
Symbol
J3
K2
K3
Min
Max
Min
Max
Min
Max
UNIT
Row Cycle Time
tRC
60
-
65
-
65
-
ns
Auto Refresh Row Cycle Time
tRFC
72
-
75
-
75
-
ns
Row Active Time
tRAS
42
70K
45
120K
50
120K
ns
Active to Read with Auto
Precharge Delay
tRAP
tRCD or
tRAS(min)
-
tRCD or
tRAS(min)
-
tRCD or
tRAS(min)
-
ns
Row Address to Column
Address Delay
tRCD
18
-
20
-
20
-
ns
Row Active to Row Active Delay
tRRD
12
-
15
-
15
-
ns
Column Address to Column
Address Delay
tCCD
1
-
1
-
1
-
tCK
Row Precharge Time
tRP
18
-
20
-
20
-
ns
Write Recovery Time
tWR
15
-
15
-
15
-
ns
Internal Write to Read
Command Delay
tWTR
1
-
1
-
1
-
tCK
Auto Precharge Write Recovery
+ Precharge Time22
tDAL
(tWR/tCK)
+
(tRP/tCK)
-
(tWR/tCK)
+
(tRP/tCK)
-
(tWR/tCK)
+
(tRP/tCK)
-
tCK
6
12
-
-
-
-
6
12
7.5
12
7.5
12
7.5
12
7.5
12
10
12
System Clock
Cycle Time24
CL = 3
CL = 2.5
tCK
CL = 2
ns
Clock High Level Width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
tCK
Clock Low Level Width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tCK
Data-Out edge to Clock edge
Skew
tAC
-0.7
0.7
-0.75
0.75
-0.75
0.75
ns
DQS-Out edge to Clock edge
Skew
tDQSCK
-0.6
0.6
-0.75
0.75
-0.75
0.75
ns
DQS-Out edge to Data-Out
edge Skew21
tDQSQ
-
0.45
-
0.5
-
0.5
ns
Data-Out hold time from
DQS20
tQH
tHP
-tQHS
-
tHP
-tQHS
-
tHP
-tQHS
-
ns
Clock Half Period19,20
tHP
min
(tCL,tCH)
-
min
(tCL,tCH)
-
min
(tCL,tCH)
-
ns
tQHS
-
0.55
-
0.75
-
0.75
ns
Data Hold Skew Factor20
Valid Data Output Window
Rev. 1.0 / May 2009
tDV
tQH - tDQSQ
tQH - tDQSQ
tQH - tDQSQ
ns
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H5DU1262GTR Series
- Continue
Parameter
Symbol
FA
FB
Min
Max
Min
Max
UNIT
Data-out high-impedance window from CK,/CK10
tHZ
-
tAC
(Max)
-
tAC
(Max)
ns
Data-out low-impedance window from CK, /CK10
tLZ
-0.7
0.7
-0.7
0.7
ns
Input Setup Time (fast slew rate)14,16-18
tIS
0.75
-
0.75
-
ns
Input Hold Time (fast slew rate)14,16-18
tIH
0.75
-
0.75
-
ns
Input Setup Time (slow slew rate)15-18
tIS
0.7
-
0.7
-
ns
Input Hold Time (slow slew rate)15-18
tIH
0.7
-
0.7
-
ns
tIPW
2.2
-
2.2
-
ns
Write DQS High Level Width
tDQSH
0.4
0.6
0.4
0.6
tCK
Write DQS Low Level Width
tDQSL
0.4
0.6
0.4
0.6
tCK
Clock to First Rising edge of DQS-In
tDQSS
0.85
1.15
0.85
1.15
tCK
DQS falling edge to CK setup time
tDSS
0.3
-
0.3
-
tCK
DQS falling edge hold time from CK
tDSH
0.3
-
0.3
-
tCK
DQ & DM input setup time25
tDS
0.4
-
0.4
-
ns
DQ & DM input hold time25
tDH
0.4
-
0.4
-
ns
DQ & DM Input Pulse Width17
tDIPW
1.75
-
1.75
-
ns
Read DQS Preamble Time
tRPRE
0.9
1.1
0.9
1.1
tCK
Read DQS Postamble Time
tRPST
0.4
0.6
0.4
0.6
tCK
Write DQS Preamble Setup Time12
tWPRES
0
-
0
-
ns
Write DQS Preamble Hold Time
tWPREH
0.35
-
0.35
-
tCK
Write DQS Postamble Time11
tWPST
0.4
0.6
0.4
0.6
tCK
Mode Register Set Delay
tMRD
2
-
2
-
tCK
Exit Self Refresh to non-Read command23
tXSNR
75
-
75
-
ns
Exit Self Refresh to Read command
tXSRD
200
-
200
-
tCK
Average Periodic Refresh Interval13,25
tREFI
-
15.6
-
15.6
us
Input Pulse Width17
Rev. 1.0 / May 2009
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H5DU1262GTR Series
- Continue
Parameter
Symbol
E3
E4
Min
Max
Min
Max
UNIT
Data-out high-impedance window from CK,/CK10
tHZ
-
tAC
(Max)
-
tAC
(Max)
ns
Data-out low-impedance window from CK, /CK10
tLZ
-0.7
0.7
-0.7
0.7
ns
Input Setup Time (fast slew rate)14,16-18
tIS
0.6
-
0.6
-
ns
Input Hold Time (fast slew rate)14,16-18
tIH
0.6
-
0.6
-
ns
Input Setup Time (slow slew rate)15-18
tIS
0.7
-
0.7
-
ns
Input Hold Time (slow slew rate)15-18
tIH
0.7
-
0.7
-
ns
tIPW
2.2
-
2.2
-
ns
Write DQS High Level Width
tDQSH
0.35
-
0.35
-
tCK
Write DQS Low Level Width
tDQSL
0.35
-
0.35
-
tCK
Clock to First Rising edge of DQS-In
tDQSS
0.72
1.25
0.72
1.25
tCK
DQS falling edge to CK setup time
tDSS
0.2
-
0.2
-
tCK
DQS falling edge hold time from CK
tDSH
0.2
-
0.2
-
tCK
DQ & DM input setup time25
tDS
0.4
-
0.4
-
ns
DQ & DM input hold time25
tDH
0.4
-
0.4
-
ns
DQ & DM Input Pulse Width17
tDIPW
1.75
-
1.75
-
ns
Read DQS Preamble Time
tRPRE
0.9
1.1
0.9
1.1
tCK
Read DQS Postamble Time
tRPST
0.4
0.6
0.4
0.6
tCK
Write DQS Preamble Setup Time12
tWPRES
0
-
0
-
ns
Write DQS Preamble Hold Time
tWPREH
0.25
-
0.25
-
tCK
Write DQS Postamble Time11
tWPST
0.4
0.6
0.4
0.6
tCK
Mode Register Set Delay
tMRD
2
-
2
-
tCK
Exit Self Refresh to non-Read command23
tXSNR
75
-
75
-
ns
Exit Self Refresh to Read command
tXSRD
200
-
200
-
tCK
Average Periodic Refresh Interval13,25
tREFI
-
15.6
-
15.6
us
Input Pulse Width17
Rev. 1.0 / May 2009
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H5DU1262GTR Series
- Continue
Parameter
Symbol
J3
K2
K3
Min
Max
Min
Max
Min
Max
UNIT
Data-out high-impedance window from CK,/
CK10
tHZ
-
tAC
(Max)
-
tAC
(Max)
-
tAC
(Max)
ns
Data-out low-impedance window from CK, /
CK10
tLZ
-0.7
0.7
-0.75
0.75
-0.75
0.75
ns
Input Setup Time (fast slew rate)14,16-18
tIS
0.75
-
0.9
-
0.9
-
ns
Input Hold Time (fast slew rate)14,16-18
tIH
0.75
-
0.9
-
0.9
-
ns
Input Setup Time (slow slew rate)15-18
tIS
0.8
-
1.0
-
1.0
-
ns
Input Hold Time (slow slew rate)15-18
tIH
0.8
-
1.0
-
1.0
-
ns
tIPW
2.2
-
2.2
-
2.2
-
ns
Write DQS High Level Width
tDQSH
0.35
-
0.35
-
0.35
-
tCK
Write DQS Low Level Width
tDQSL
0.35
-
0.35
-
0.35
-
tCK
Clock to First Rising edge of DQS-In
tDQSS
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS falling edge to CK setup time
tDSS
0.2
-
0.2
-
0.2
-
tCK
DQS falling edge hold time from CK
tDSH
0.2
-
0.2
-
0.2
-
tCK
DQ & DM input setup time25
tDS
0.45
-
0.5
-
0.5
-
ns
DQ & DM input hold time25
tDH
0.45
-
0.5
-
0.5
-
ns
DQ & DM Input Pulse Width17
tDIPW
1.75
-
1.75
-
1.75
-
ns
Read DQS Preamble Time
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Read DQS Postamble Time
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
Write DQS Preamble Setup Time12
tWPRES
0
-
0
-
0
-
ns
Write DQS Preamble Hold Time
tWPREH
0.25
-
0.25
-
0.25
-
tCK
Write DQS Postamble Time11
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
Mode Register Set Delay
tMRD
2
-
2
-
2
-
tCK
Exit Self Refresh to non-Read command23
tXSNR
75
-
75
-
75
-
ns
Exit Self Refresh to Read command
tXSRD
200
-
200
-
200
-
tCK
Average Periodic Refresh Interval13,25
tREFI
-
15.6
-
15.6
-
15.6
us
Input Pulse Width17
Rev. 1.0 / May 2009
31
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H5DU1262GTR Series
Note:
1. All voltages referenced to Vss.
2. Tests for ac timing, IDD, and electrical, ac and dc characteristics, may be conducted at nominal reference/supply voltage levels,
but the related specifications and device operation are guaranteed for the full voltage range specified.
3. Below figure represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to
be either a precise representation of the typical system environment nor a depiction of the actual load presented by a production
tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to a system environment.
Manufacturers will correlate to their production test conditions (generally a coaxial transmission line terminated at the tester electronics).
VDDQ
Output
(VOUT)
50 Ω
30 pF
Figure: Timing Reference Load
4. AC timing and IDD tests may use a VIL to VIHswing of up to 1.5 V in the test environment, but input timing is still referenced to
VREF (or to the crossing point for CK, /CK), and parameter specifications are guaranteed for the specified ac input levels under
normal use conditions. The minimum slew rate for the input signals is 1 V/ns in the range between VIL(ac) and VIH(ac).
5. The ac and dc input level specifications are as defined in the SSTL_2 Standard (i.e., the receiver will effectively switch as a result
of the signal crossing the ac input level and will remain in that state as long as the signal does not ring back above (below) the
dc input LOW (HIGH) level.
6. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE < 0.2VDDQ is
recognized as LOW.
7. The CK, /CK input reference level (for timing referenced to CK, /CK) is the point at which CK and /CK cross; the input reference
level for signals other than CK, /CK is VREF.
8. The output timing reference voltage level is VTT.
9. Operation or timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must
be powered down and then restarted through the specified initialization sequence before normal operation can continue.
10. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to
a specific voltage level but specify when the device output is no longer driving (HZ), or begins driving (LZ).
11. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but
system performance (bus turnaround) will degrade accordingly.
12. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A
valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were previously in progress on the bus, DQS will be transitioning from High-Z to logic LOW. If a previous write was in progress, DQS could
be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS.
13. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
14. For command/address input slew rate ≥ 1.0 V/ns.
15. For command/address input slew rate ≥ 0.5 V/ns and ＜ 1.0 V/ns
16. For CK & /CK slew rate ≥ 1.0 V/ns (single-ended)
17. These parameters guarantee device timing, but they are not necessarily tested on each device.
They may be guaranteed by device design or tester correlation.
18. Slew Rate is measured between VOH(ac) and VOL(ac).
19. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this
value can be greater than the minimum specification limits for tCL and tCH).
For example, tCL and tCH are = 50% of the period, less the half period jitter (tJIT(HP)) of the clock source, and less the half
period jitter due to crosstalk (tJIT(crosstalk)) into the clock traces.
Rev. 1.0 / May 2009
32
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H5DU1262GTR Series
20.tQH = tHP - tQHS, where:
tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS accounts for 1) The
pulse duration distortion of on-chip clock circuits; and 2) The worst case push--out of DQS on one transition followed by the
worst case pull--in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects,
and p-channel to n-channel variation of the output drivers.
21. tDQSQ:
Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any given
cycle.
22. tDAL = (tWR/tCK) + (tRP/tCK)
For each of the terms above, if not already an integer, round to the next highest integer.
Example: For DDR266B at CL=2.5 and tCK=7.5 ns
tDAL = ((15 ns / 7.5 ns) + (20 ns / 7.5 ns)) clocks
= ((2) + (3)) clocks
= 5 clocks
23. In all circumstances, tXSNR can be satisfied using
tXSNR = tRFCmin + 1*tCK
24. The only time that the clock frequency is allowed to change is during self-refresh mode.
25. If refresh timing or tDS/tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid
READ can be executed.
Rev. 1.0 / May 2009
33
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H5DU1262GTR Series
SYSTEM CHARACTERISTICS CONDITIONS for DDR SDRAMS
The following tables are described specification parameters that required in systems using DDR devices to ensure
proper performannce. These characteristics are for system simulation purposes and are guaranteed by design.
Input Slew Rate for DQ/DM/DQS
(Table a.)
AC CHARACTERISTICS
PARAMETER
DQ/DM/DQS input slew rate
measured between VIH(DC),
VIL(DC) and VIL(DC), VIH(DC)
DDR400
DDR333
DDR266
Symbol
min
max
min
max
min
max
DCSLEW
0.5
4.0
0.5
4.0
0.5
4.0
UNIT
Note
V/ns
1,12
Address & Control Input Setup & Hold Time Derating (Table b.)
Input Slew Rate
Delta tIS
Delta tIH
UNIT
Note
0.5 V/ns
0
0
ps
9
0.4 V/ns
+50
0
ps
9
0.3 V/ns
+100
0
ps
9
DQ & DM Input Setup & Hold Time Derating
(Table c.)
Input Slew Rate
Delta tDS
Delta tDH
UNIT
Note
0.5 V/ns
0
0
ps
11
0.4 V/ns
+75
0
ps
11
0.3 V/ns
+150
0
ps
11
DQ & DM Input Setup & Hold Time Derating for Rise/Fall Delta Slew Rate
(Table d.)
Input Slew Rate
Delta tDS
Delta tDH
UNIT
Note
± 0.0 ns/V
0
0
ps
10
± 0.25 ns/V
+50
+50
ps
10
± 0.5 ns/V
+100
+100
ps
10
Output Slew Rate Characteristics (for x16 Device) (Table e.)
Slew Rate Characteristic
Typical Range (V/
ns)
Minimum (V/
ns)
Maximum (V/
ns)
Note
Pullup Slew Rate
1.2 - 2.5
0.7
5.0
1,3,4,6,7,8
Pulldown Slew Rate
1.2 - 2.5
0.7
5.0
2,3,4,6,7,8
Output Slew Rate Matching Ratio Characteristics
Slew Rate Characteristic
(Table f.)
DDR266A
DDR266B
Parameter
min
max
min
max
Output Slew Rate Matching Ratio (Pullup to
Pulldown)
-
-
-
-
Rev. 1.0 / May 2009
Note
5,12
34
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H5DU1262GTR Series
Note:
1. Pullup slew rate is characterized under the test conditions as shown in below Figure.
Test Point
Output
(VOUT)
50
Ω
VSSQ
Figure: Pullup Slew rate
2. Pulldown slew rate is measured under the test conditions shown in below Figure.
VDDQ
Output
(VOUT)
50Ω
Test Point
Figure: Pulldown Slew rate
3. Pullup slew rate is measured between (VDDQ/2 - 320 mV ± 250mV)
Pulldown slew rate is measured between (VDDQ/2 + 320mV ± 250mV)
Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output
switching.
Example: For typical slew, DQ0 is switching
For minimum slew rate, all DQ bits are switching worst case pattern
For maximum slew rate, only one DQ is switching from either high to low, or low to high.
The remaining DQ bits remain the same as for previous state.
4. Evaluation conditions
Typical: 25 oC (Ambient), VDDQ = nominal, typical process
Minimum: 70 oC (Ambient), VDDQ = minimum, slow-slow process
Maximum: 0 oC (Ambient), VDDQ = Maximum, fast-fast process
5. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature
and voltage range. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process
variation.
6. Verified under typical conditions for qualification purposes.
7. TSOP-II package devices only.
8. Only intended for operation up to 256 Mbps per pin.
9. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5 V/ns as shown in Table b.
The Input slew rate is based on the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions.
10. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ, as shown in Tables c
& d. Input slew rate is based on the larger of AC-AC delta rise, fall rate and DC-DC delta rise, fall rate. Input slew rate is based on
the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions. The
delta rise/fall rate is calculated as:
{1/(Slew Rate1)} - {1/(slew Rate2)}
For example:
If Slew Rate 1 is 0.5 V/ns and Slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is -0.5 ns/V. Using the table given, this would
result in the need for an increase in tDS and tDH of 100ps.
11. Table c is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the
lesser of the AC-AC slew rate and the DC-DC slew rate. The input slew rate is based on the lesser of the slew rates determined by
either VIH(ac) to VIL(AC) or VIH(DC) to VIL(DC), and similarly for rising transitions.
12. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transitions through the DC region must be monotonic.
Rev. 1.0 / May 2009
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H5DU1262GTR Series
CAPACITANCE (TA=25oC, f=100MHz)
Parameter
Pin
Symbol
Min
Max
Unit
Input Clock Capacitance
CK, /CK
CI1
2.0
3.0
pF
Delta Input Clock Capacitance
CK, /CK
Delta CI1
-
0.25
pF
Input Capacitance
All other input-only pins
CI1
2.0
3.0
pF
Delta Input Capacitance
All other input-only pins
Delta CI2
-
0.5
pF
Input / Output Capacitance
DQ, DQS, DM
CIO
4.0
5.0
pF
Delta Input / Output Capacitance
DQ, DQS, DM
Delta CIO
-
0.5
pF
Note:
1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V
2. Pins not under test are tied to GND.
3. These values are guaranteed by design and are tested on a sample basis only.
OUTPUT LOAD CIRCUIT
V TT
RT = 50 Ohm
Out put
ZO = 50 Ohm
V REF
CL = 30pF
Rev. 1.0 / May 2009
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H5DU1262GTR Series
PACKAGE INFORMATION
400mil 66pin Thin Small Outline Package
Unit : mm(Inch)
11.94 (0.470)
11.79 (0.462)
10.26 (0.404)
10.05 (0.396)
BASE PLANE
22.33 (0.879)
22.12 (0.871)
0.65 (0.0256) BSC
1.194 (0.0470)
0.991 (0.0390)
Rev. 1.0 / May 2009
0.35 (0.0138)
0.25 (0.0098)
0 ~ 5 Deg.
SEATING PLANE
0.15 (0.0059)
0.05 (0.0020)
0.597 (0.0235)
0.406 (0.0160)
0.210 (0.0083)
0.120 (0.0047)
37