NTD4815N Power MOSFET 30 V, 35 A, Single N--Channel, DPAK/IPAK Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices http://onsemi.com V(BR)DSS Applications RDS(ON) MAX 15 mΩ @ 10 V 30 V • CPU Power Delivery • DC--DC Converters • High Side Switching ID MAX 35 A 25 mΩ @ 4.5 V D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Value Unit VDSS 30 V VGS ±20 V ID 8.5 A Continuous Drain Current RθJA (Note 1) TA = 25°C Power Dissipation RθJA (Note 1) TA = 25°C PD 1.92 W Continuous Drain Current RθJA (Note 2) TA = 25°C ID 6.9 A 6.5 1 2 TA = 25°C PD 1.26 W Continuous Drain Current RθJC (Note 1) TC = 25°C ID 35 A Power Dissipation RθJC (Note 1) TC = 25°C PD 32.6 W TA = 25°C IDM 87 A TA = 25°C IDmaxPkg 35 A TJ, TSTG --55 to +175 °C Pulsed Drain Current tp=10ms Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) 27 IS 27 A Drain to Source dV/dt dV/dt 6 V/ns Single Pulse Drain--to--Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 11 Apk, L = 1.0 mH, RG = 25 Ω) EAS 60.5 mJ Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 3 CASE 369AA DPAK (Bent Lead) STYLE 2 2 3 1 2 3 CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain 4 Drain 4815NG 5.3 TC = 85°C 4 YWW TA = 85°C 4 4 4815NG Steady State S N--CHANNEL MOSFET YWW Power Dissipation RθJA (Note 2) TA = 85°C G 4815NG Gate--to--Source Voltage Symbol YWW Parameter Drain--to--Source Voltage 2 1 2 3 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y WW 4815N G = Year = Work Week = Device Code = Pb--Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2010 June, 2010 -- Rev. 5 1 Publication Order Number: NTD4815N/D NTD4815N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction--to--Case (Drain) Parameter RθJC 4.6 °C/W Junction--to--TAB (Drain) RθJC--TAB 3.5 Junction--to--Ambient – Steady State (Note 1) RθJA 78 Junction--to--Ambient – Steady State (Note 2) RθJA 119 1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu. 2. Surface--mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Drain--to--Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain--to--Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate--to--Source Leakage Current IDSS V 25 VGS = 0 V, VDS = 24 V mV/°C TJ = 25 °C 1 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.5 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain--to--Source On Resistance RDS(on) Forward Transconductance 1.5 5.6 VGS = 10 V to 11.5 V ID = 30 A 12 ID = 15 A 11.5 VGS = 4.5 V ID = 30 A 21 ID = 15 A 18.3 gFS VDS = 15 V, ID = 10 A mV/°C 15 25 6.0 mΩ S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 108 Total Gate Charge QG(TOT) 6.0 Threshold Gate Charge QG(TH) Gate--to--Source Charge QGS Gate--to--Drain Charge QGD Total Gate Charge QG(TOT) 770 VGS = 0 V, f = 1.0 MHz, VDS = 12 V VGS = 4.5 V, VDS = 15 V; ID = 30 A 181 0.9 2.5 pF 6.6 nC 3.1 VGS = 11.5 V, VDS = 15 V; ID = 30 A 14.1 nC SWITCHING CHARACTERISTICS (Note 4) Turn--On Delay Time Rise Time Turn--Off Delay Time Fall Time td(ON) tr td(OFF) 10.5 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 Ω tf 21.4 11.4 3.5 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTD4815N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 4) Turn--On Delay Time Rise Time Turn--Off Delay Time Fall Time td(ON) tr td(OFF) 6.3 VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 Ω tf 17.6 ns 18.4 2.3 DRAIN--SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 1.0 TJ = 125°C 0.92 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 30 A 1.2 V 15.3 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 8.7 ns 6.6 QRR 5.5 nC Source Inductance LS 2.49 nH Drain Inductance, DPAK LD 0.0164 Drain Inductance, IPAK LD Gate Inductance LG 3.46 Gate Resistance RG 2.6 PACKAGE PARASITIC VALUES TA = 25°C 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 1.88 Ω NTD4815N TYPICAL PERFORMANCE CURVES 80 5.5 V to 10 V 5V 50 TJ = 25°C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 60 4.5 V 40 4V 30 3.8 V 3.6 V 20 3.4 V 3.2 V 10 3V 0 1 2 3 5 4 40 30 TJ = 125°C 20 TJ = 25°C 10 TJ = --55°C 0 1 2 3 4 6 5 7 8 9 Figure 1. On--Region Characteristics Figure 2. Transfer Characteristics 0.020 0.015 0.010 0.005 3 4 5 7 6 8 9 10 12 11 RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω) VGS, GATE--TO--SOURCE VOLTAGE (VOLTS) ID = 30 A TJ = 25°C 2 50 VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS) 0.025 0 60 0 0.030 10 0.030 TJ = 25°C 0.025 0.020 VGS = 4.5 V 0.015 0.010 VGS = 11.5 V 0.005 0 10 5 15 20 25 30 VGS, GATE--TO--SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On--Resistance vs. Gate--to--Source Voltage Figure 4. On--Resistance vs. Drain Current and Gate Voltage 100,000 2.0 VGS = 0 V ID = 30 A VGS = 10 V TJ = 175°C 10,000 IDSS, LEAKAGE (nA) RDS(on), DRAIN--TO--SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω) 0 VDS ≥ 10 V 70 1.5 1.0 0.5 --50 --25 1000 TJ = 125°C 100 10 0 25 50 75 100 125 150 175 4 8 12 16 20 24 28 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS) Figure 5. On--Resistance Variation with Temperature Figure 6. Drain--to--Source Leakage Current vs. Drain Voltage http://onsemi.com 4 32 NTD4815N C, CAPACITANCE (pF) TJ = 25°C Ciss Coss 15 25 20 30 GATE--TO--SOURCE OR DRAIN--TO--SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation tr td(off) 10 td(on) tf 1 1 10 RG, GATE RESISTANCE (OHMS) QT Q1 4 6 2 4 1 0 ID = 30 A TJ = 25°C 0 1 0.1 I D, DRAIN CURRENT (AMPS) 7 6 0 Figure 8. Gate--To--Source and Drain--To--Source Voltage vs. Total Charge VGS = 0 V 25 TJ = 25°C 20 15 10 5 0 0.4 1 ms 10 ms dc 1 10 VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS) 100 EAS, SINGLE PULSE DRAIN--TO--SOURCE AVALANCHE ENERGY (mJ) 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 2 3 4 5 QG, TOTAL GATE CHARGE (nC) 2 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Figure 10. Diode Forward Voltage vs. Current 100 ms 1 10 VSD, SOURCE--TO--DRAIN VOLTAGE (VOLTS) 10 ms VGS = 20 V SINGLE PULSE TC = 25°C 12 VGS 8 100 1000 10 Q2 3 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 100 14 VDS 5 30 VDD = 15 V ID = 30 A VGS = 11.5 V 100 16 IS, SOURCE CURRENT (AMPS) t, TIME (ns) 1000 6 VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS) 1500 VDS = 0 V VGS = 0 V 1400 1300 1200 1100 Ciss 1000 900 800 700 600 500 Crss 400 300 200 100 Crss 0 5 5 10 0 10 VGS VDS VGS, GATE--TO--SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES 70 60 ID = 11 A 50 40 30 20 10 0 25 Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 175 NTD4815N TYPICAL PERFORMANCE CURVES I D, DRAIN CURRENT (AMPS) 100 10 25°C 100°C 125°C 1 0.1 10 100 PULSE WIDTH (ms) 1 1000 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 13. Avalanche Characteristics 1.0 D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 SINGLE PULSE 0.01 1.0E--05 1.0E--04 t1 t2 DUTY CYCLE, D = t1/t2 1.0E--03 1.0E--02 t, TIME (ms) RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) -- TC = P(pk) RθJC(t) 1.0E--01 1.0E+00 1.0E+01 Figure 14. Thermal Response ORDERING INFORMATION Package Shipping† NTD4815NT4G DPAK (Pb--Free) 2500 / Tape & Reel NTD4815N--1G IPAK (Pb--Free) 75 Units / Rail NTD4815N--35G IPAK Trimmed Lead (3.5 0.15 mm) (Pb--Free) 75 Units / Rail Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NTD4815N PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA--01 ISSUE B A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z c b 0.005 (0.13) M C H L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 90° CW STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 ------ 0.040 0.155 ------ 6.17 0.243 SCALE 3:1 mm inches *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 -----1.01 3.93 ------ NTD4815N PACKAGE DIMENSIONS 3 IPAK, STRAIGHT LEAD CASE 369AC--01 ISSUE O B V NOTES: 1.. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.. CONTROLLING DIMENSION: INCH. 3. SEATING PLANE IS ON TOP OF DAMBAR POSITION. 4. DIMENSION A DOES NOT INCLUDE DAMBAR POSITION OR MOLD GATE. C E R DIM A B C D E F G H J K R V W A SEATING PLANE K W F J G D H 3 PL 0.13 (0.005) W INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.043 0.090 BSC 0.034 0.040 0.018 0.023 0.134 0.142 0.180 0.215 0.035 0.050 0.000 0.010 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.09 2.29 BSC 0.87 1.01 0.46 0.58 3.40 3.60 4.57 5.46 0.89 1.27 0.000 0.25 IPAK (STRAIGHT LEAD DPAK) CASE 369D--01 ISSUE B C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 --T-SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 ------ MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 ------ STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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