MOTOROLA BD179-10 Plastic medium power silicon npnp transistor Datasheet

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by BD179/D
SEMICONDUCTOR TECHNICAL DATA
3.0 AMPERES
POWER TRANSISTORS
NPN SILICON
80 VOLTS
30 WATTS
. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
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x
x
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc
• BD179 is complementary with BD180
MAXIMUM RATINGS
Symbol
Value
Unit
Collector–Emitter Voltage
Rating
VCEO
80
Vdc
Collector–Base Voltage
VCBO
80
Vdc
Emitter–Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
3.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
PD
30
240
Watts
mw/_C
TJ, Tstg
– 65 to + 150
_C
Symbol
Max
Unit
θJC
4.16
_C/W
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 77–08
TO–225AA TYPE
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
80
—
Vdc
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ICBO
—
0.1
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
—
1.0
mAdc
63
15
160
—
Collector–Emitter Sustaining Voltage*
(IC = 0.1 Adc, IB = 0)
DC Current Gain
(IC = 0.15 A, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
hFE
BD179–10
ALL
Collector–Emitter Saturation Voltage*
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
—
0.8
Vdc
Base–Emitter On Voltage*
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
—
1.3
Vdc
fT
3.0
—
MHz
Current–Gain – Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
* Pulse Test: Pulse Width
300 As, Duty Cycle
2.0%.
REV 7
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
10
100 µs
IC, COLLECTOR CURRENT (AMP)
7.0
5.0
3.0
2.0
1.0 ms
dc
1.0
0.7
0.5
TJ = 150°C
SECONDARY BREAKDOWN LIMITATION
THERMAL LIMITATION
(BASE–EMITTER DISSIPATION IS
SIGNIFICANT ABOVE IC = 2.0 AMP)
PULSE DUTY CYCLE < 10%
0.3
0.2
0.1
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To
insure operation below the maximum TJ, power–temperature
derating must be observed for both steady state and pulse
power conditions.
5.0 ms
5.0 7.0 10
20 30
50
2.0 3.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
70
100
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
1.0
0.8
IC = 0.1 A
0.25 A
0.5 A
1.0 A
0.6
TJ = 25°C
0.4
0.2
0
0.2
0.3
1.0
0.5
2.0
3.0
10
5.0
IB, BASE CURRENT (mA)
30
20
50
200
100
1.5
VCE = 2.0 V
1.2
300
200
100
70
50
TJ = + 150°C
30
20
TJ = + 55°C
VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN (NORMALIZED)
Figure 2. Collector Saturation Region
1000
700
500
TJ = + 25°C
TJ = 25°C
0.9
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.3
VCE(sat) @ IC/IB = 10
10
2.0 3.0 5.0
10
20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
0
2.0 3.0 5.0
10
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Figure 3. Current Gain
1.0
0.7
0.5
Figure 4. “On” Voltages
D = 0.5
0.3
0.2
D = 0.2
0.1
0.07
0.05
D = 0.05
D = 0.1
SINGLE PULSE
D = 0.01
θJC(t) = r(t) θJC
θJC = 4.16°C/W MAX
θJC = 3.5°C/W TYP
P(pk)
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
0.03
0.02
0.01
0.01
20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME or PULSE WIDTH (ms)
20
30
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200 300
500
Figure 5. Thermal Response
2
Motorola Bipolar Power Transistor Device Data
1000
PACKAGE DIMENSIONS
–B–
U
F
Q
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
1 2 3
H
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 _ TYP
0.148
0.158
0.045
0.055
0.025
0.035
0.145
0.155
0.040
–––
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.39
0.64
0.88
3.69
3.93
1.02
–––
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 77–08
TO–225AA TYPE
ISSUE V
Motorola Bipolar Power Transistor Device Data
3
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4
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Motorola Bipolar Power Transistor Device Data
*BD179/D*
BD179/D
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