NEC NP22N055HHE Mos field effect transistor Datasheet

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP22N055HHE, NP22N055IHE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
DESCRIPTION
These products are N-channel MOS Field Effect
Transistors designed for high current switching
applications.
PART NUMBER
PACKAGE
NP22N055HHE
TO-251
NP22N055IHE
TO-252
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A)
• Low Ciss : Ciss = 590 pF TYP.
• Built-in gate protection diode
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±22
A
Note1
ID(pulse)
±55
A
Total Power Dissipation (TA = 25°C)
PT
1.2
W
Total Power Dissipation (TC = 25°C)
Drain Current (Pulse)
PT
45
W
Single Avalanche Current
Note2
IAS
13 / 5
A
Single Avalanche Energy
Note2
EAS
16 / 25
mJ
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
–55 to +175
°C
(TO-252)
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 V→0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
3.33
°C/W
Channel to Ambient
Rth(ch-A)
125
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14135EJ3V0DS00 (3rd edition)
Date Published March 2001 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
©
1999
NP22N055HHE, NP22N055IHE
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
30
39
mΩ
2.0
3.0
4.0
V
4
8
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 11 A
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 11 A
Drain Leakage Current
IDSS
VDS = 55 V, VGS = 0 V
10
µA
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
µA
Input Capacitance
Ciss
VDS = 25 V, VGS = 0 V, f = 1 MHz
590
890
pF
Output Capacitance
Coss
110
170
pF
Reverse Transfer Capacitance
Crss
52
94
pF
Turn-on Delay Time
td(on)
ID = 11 A, VGS(on) = 10 V, VDD = 28 V,
11
24
ns
RG = 1 Ω
6.0
15
ns
td(off)
25
49
ns
tf
6.6
17
ns
12
18
nC
Rise Time
tr
Turn-off Delay Time
Fall Time
Total Gate Charge
QG
Gate to Source Charge
QGS
3
nC
Gate to Drain Charge
QGD
5
nC
IF = 22 A, VGS = 0 V
1.0
V
IF = 22 A, VGS = 0 V, di/dt = 100A/µs
35
ns
42
nC
Body Diode Forward Voltage
VF(S-D)
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
ID = 22 A, VDD = 44 V, VGS = 10 V
S
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS(on)
10 %
90 %
VDD
VDS
90 %
BVDSS
IAS
VDS
VDS
ID
Starting Tch
τ
τ = 1 µs
Duty Cycle ≤ 1 %
TEST CIRCUIT 3 GATE CHARGE
PG.
2
50 Ω
10 % 10 %
0
Wave Form
VDD
D.U.T.
IG = 2 mA
90 %
VDS
VGS
0
RL
VDD
Data Sheet D14135EJ3V0DS
td(on)
tr
ton
td(off)
tf
toff
NP22N055HHE, NP22N055IHE
TYPICAL CHARACTERISTICS (TA = 25 °C)
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
70
100
80
60
40
20
0
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175 200
0
25
TC - Case Temperature - ˚C
★
ID(pulse)
ID(DC)
s
0µ
s
=1
0µ
10
1m
Po
DC
Lim wer
ite Dis
d
sip
ati
PW
Single Pulse Avalanche Energy - mJ
10
s
on
1
TC = 25˚C
Single Pulse
0.1
0.1
1
100 125 150 175 200
30
25
25 mJ
20
10
5
0
25
10
IAS = 5 A
13 A
16 mJ
15
100
50
75
100
125
150
175
Starting Tch - Starting Channel Temperature - ˚C
VDS - Drain to Source Voltage - V
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - ˚C/W
ID - Drain Current - A
1000
d
ite )
im 0 V
)L 1
n
o
=
S(
S
RD t VG
(a
75
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
Figure3. FORWARD BIAS SAFE OPERATING AREA
100
50
TC - Case Temperature - ˚C
Rth(ch-A) = 125 ˚C/W
100
10
Rth(ch-C) = 3.33 ˚C/W
1
0.1
0.01
10 µ
Single Pulse
TC = 25˚C
100 µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D14135EJ3V0DS
3
NP22N055HHE, NP22N055IHE
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100
60
Pulsed
Pulsed
ID - Drain Current - A
ID - Drain Current - A
50
10
TA = −40˚C
25˚C
75˚C
150˚C
175˚C
1
0.1
VGS =10 V
40
30
20
10
VDS = 10 V
0
| yfs | - Forward Transfer Admittance - S
Pulsed
VDS = 10 V
10
TA = 175˚C
75˚C
25˚C
−40˚C
1
0.1
0.01
0.01
0.1
1
10
100
RDS(on) - Drain to Source On-state Resistance - mΩ
ID - Drain Current - A
4
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
Pulsed
70
60
50
40
30
VGS = 10 V
20
10
0
0.1
1
10
2
3
4
VDS - Drain to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
1
0
6.0
100
RDS(on) - Drain to Source On-state Resistance - mΩ
2.0
3.0
4.0
5.0
VGS - Gate to Source Voltage - V
VGS(th) - Gate to Source Threshold Voltage - V
0.01
1.0
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
Pulsed
70
60
50
40
ID = 11 A
30
20
10
0
5
0
10
15
20
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = VGS
ID = 250 µA
4.0
3.0
2.0
1.0
0
−50
0
50
100
150
Tch - Channel Temperature - ˚C
ID - Drain Current - A
Data Sheet D14135EJ3V0DS
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
90
100
ISD - Diode Forward Current - A
80
70
60
VGS = 10 V
40
30
20
10
ID = 11 A
0
−50
50
0
100
Pulsed
VGS = 10 V
10
VGS = 0 V
1
0.1
0.01
0
150
0.5
Tch - Channel Temperature - ˚C
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
1000
Coss
Crss
10
0.1
1
10
1000
100
tf
td(off)
td(on)
10
tr
1
0.1
100
100
ID - Drain Current - A
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
di/dt = 100 A/µs
VGS = 0 V
100
10
VDS - Drain to Source Voltage - V
80
1000
trr - Reverse Recovery Time - ns
10
1
VDS - Drain to Source Voltage - V
1
0.1
1.5
Figure15. SWITCHING CHARACTERISTICS
Ciss
100
1.0
VSD - Source to Drain Voltage - V
14
60
10
VGS
10
8
40
6
20
4
VDS
2
ID = 22 A
0
1.0
12
VDD = 44 V
28 V
11 V
0
100
2
4
6
8
10
12
14
VGS - Gate to Source Voltage - V
50
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
NP22N055HHE, NP22N055IHE
16
QG - Gate Charge - nC
IF - Drain Current - A
Data Sheet D14135EJ3V0DS
5
NP22N055HHE, NP22N055IHE
PACKAGE DRAWINGS (Unit: mm)
1)TO-251 (MP-3)
2)TO-252 (MP-3Z)
2.3±0.2
2.3 TYP.
10.0 MAX.
0.9 MAX.
2.3 TYP.
0.8 MAX.
0.7 TYP.
1.1±0.2
0.8 TYP.
2.3 TYP.
0.75 TYP.
2.3 TYP.
0.5+0.2
−0.1
0.5±0.1
2.0
MIN.
0.8 TYP.
0.5+0.2
−0.1
5.5±0.2
4.3 MAX.
5.5±0.2
7.0 MIN.
13.7 MIN.
1.6±0.2
5.0±0.2
1.1±0.2
2.3±0.2
6.5±0.2
1.0 MIN.
1.8 TYP.
0.5±0.1
1.5+0.2
−0.1
5.0±0.2
1.5+0.2
−0.1
6.5±0.2
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark 1. These products are an electrostatic sensitive device. Please handle with caution.
2. The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
6
Data Sheet D14135EJ3V0DS
NP22N055HHE, NP22N055IHE
[MEMO]
Data Sheet D14135EJ3V0DS
7
NP22N055HHE, NP22N055IHE
• The information in this document is current as of March, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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M8E 00. 4