PHILIPS BAV99S High-speed switching diode array Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BAV99S
High-speed switching diode array
Product specification
Supersedes data of 2001 Mar 02
2001 May 14
Philips Semiconductors
Product specification
High-speed switching diode array
BAV99S
FEATURES
PINNING
• Small plastic SMD package
PIN
DESCRIPTION
• High switching speed
1
anode (a1)
• Two electrically isolated series configuration arrays
2
cathode (k2)
• Low capacitance.
3
cathode (k3)/anode (a4)
4
anode (a3)
APPLICATIONS
5
cathode (k4)
• General purpose switching in e.g. surface mounted
circuits.
6
cathode (k1)/anode (a2)
• Rail to rail (ESD) protection.
6
5
4
DESCRIPTION
The BAV99S consists of four single die high speed
switching diodes in two electrically isolated series
configurations, encapsulated in the small SMD SC-88
(SOT363) plastic package.
1
2
Top view
3
6
5
4
1
2
3
MBL211
MSA370
Marking code: K1.
Fig.1
Simplified outline (SC-88; SOT363)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
−
85
V
VR
continuous reverse voltage
−
75
V
IF
continuous forward current
−
200
mA
IFRM
repetitive peak forward current
−
450
mA
IFSM
non-repetitive peak forward current
t = 1 µs
−
4.5
A
t = 1 ms
−
1
A
t=1s
−
0.5
A
−
250
mW
square wave; Tj = 25 °C prior to
surge; see Fig.4
Ts ≤ 85 °C; note 1
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
Note
1. Solder points at pins: 2, 3, 5 and 6.
2001 May 14
2
Philips Semiconductors
Product specification
High-speed switching diode array
BAV99S
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
IR
forward voltage
see Fig.3
reverse current
IF = 1 mA
715
mV
IF = 10 mA
855
mV
IF = 50 mA
1
V
IF = 150 mA
1.25
V
VR = 75 V
1
µA
VR = 25 V; Tj = 150 °C
30
µA
see Fig.5
VR = 75 V; Tj = 150 °C
50
µA
Cd
diode capacitance
VR = 0; f = 1 MHz; see Fig.6
1.5
pF
trr
reverse recovery time
when switched from IF = 10 mA to IR = 10 mA;
RL = 100 Ω; measured at IR = 1 mA; see Fig.7
4
ns
Vfr
forward recovery voltage
when switched to IF = 10 mA; tr = 20 ns; see Fig.8
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
Note
1. Solder points at pins: 2, 3, 5 and 6.
2001 May 14
3
note 1
VALUE
UNIT
≤260
K/W
Philips Semiconductors
Product specification
High-speed switching diode array
BAV99S
GRAPHICAL DATA
MGW102
250
MBG382
300
handbook, halfpage
handbook, halfpage
I Fmax
IF
(mA)
(mA)
200
(1)
(2)
(3)
200
150
100
100
50
0
0
0
50
100
Ts (°C)
150
0
1
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.2
Maximum permissible continuous forward
current as a function of soldering point
temperature.
Fig.3
Forward current as a function of forward
voltage.
MGW103
10
handbook, full pagewidth
I FSM
(A)
1
10 −1
1
10
102
103
t p (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2001 May 14
4
104
Philips Semiconductors
Product specification
High-speed switching diode array
BAV99S
MGA884
105
IR
(nA)
10
Cd
(pF)
V R = 75 V
4
0.6
max
103
10
MBG446
0.8
handbook, halfpage
75 V
0.4
25 V
2
0.2
typ
typ
10
0
100
T j ( o C)
0
200
0
4
8
12
VR (V)
16
f = 1 MHz; Tj = 25 °C.
Fig.5
2001 May 14
Reverse current as a function of
junction temperature.
Fig.6
5
Diode capacitance as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
High-speed switching diode array
BAV99S
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
MGA881
(1)
90%
VR
input signal
output signal
(1) IR = 1 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05.
Oscilloscope: rise time tr = 0.35 ns.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R = 50 Ω
S
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005.
Fig.8 Forward recovery voltage test circuit and waveforms.
2001 May 14
6
t
tp
output
signal
Philips Semiconductors
Product specification
High-speed switching diode array
BAV99S
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
2001 May 14
REFERENCES
IEC
JEDEC
EIAJ
SC-88
7
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
High-speed switching diode array
BAV99S
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 May 14
8
Philips Semiconductors
Product specification
High-speed switching diode array
BAV99S
NOTES
2001 May 14
9
Philips Semiconductors
Product specification
High-speed switching diode array
BAV99S
NOTES
2001 May 14
10
Philips Semiconductors
Product specification
High-speed switching diode array
BAV99S
NOTES
2001 May 14
11
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SCA 72
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613514/03/pp12
Date of release: 2001
May 14
Document order number:
9397 750 08226
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