DMN2400UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Ultra-Low Package Profile, 0.4mm Maximum Package Height ESD Protected up to 1.5kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Case: X2-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) D X2-DFN1006-3 S G D G ESD PROTECTED TO 1.5kV Top View Package Pin Configuration Bottom View Gate Protection Diode S Equivalent Circuit Ordering Information (Note 4) Part Number DMN2400UFB4-7 DMN2400UFB4-7R DMN2400UFB4-7B Notes: Marking NC NC NC Reel Size (inches) 7 7 7 Tape Width (mm) 8 8 8 Tape Pitch (mm) 4 4 2 Quantity per Reel 3,000 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. DMN2400UFB4 Document number: DS32025 Rev. 8 - 2 1 of 9 www.diodes.com March 2017 © Diodes Incorporated DMN2400UFB4 Marking Information From date code 1527 (YYWW), this changes to: NC NC Top View Bar Denotes Gate and Source Side Top View Dot Denotes Drain Side NC NC NC NC NC NC DMN2400UFB4-7 NC Top View Bar Denotes Gate and Source Side NC = Part Marking Code DMN2400UFB4-7R NC NC NC NC Top View Bar Denotes Gate and Source Side NC = Part Marking Code DMN2400UFB4 Document number: DS32025 Rev. 8 - 2 NC NC NC DMN2400UFB4-7B 2 of 9 www.diodes.com March 2017 © Diodes Incorporated DMN2400UFB4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Symbol VDSS VGSS Value 20 ±12 Unit V V ID 0.75 0.55 A IDM 3 A TA = +25°C TA = +85°C Steady State Pulsed Drain Current (Notes 5 & 6) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG Value 0.47 258 -55 to +150 5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS 20 — V Zero Gate Voltage Drain Current TJ = +25°C IDSS — — Gate-Source Leakage Gate-Source Leakage Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage IGSS IGSS IGSS — — — — — — — 100 50 ±100 ±1.0 ±50 VGS(TH) Static Drain-Source On-Resistance RDS(ON) 0.5 — — — — — — — — 1.0 0.7 0.9 0.55 0.75 0.9 — 1.2 — — — — — — — — — — 36.0 5.7 4.2 0.5 0.07 0.1 4.11 3.82 14.8 9.6 — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Unit mW °C/W °C |Yfs| VSD Ciss Coss Crss Qg Qgs Qgd tD(ON) tR tD(OFF) tF nA nA μA μA V Ω S V pF pF pF nC nC nC ns ns ns ns Test Condition VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VDS = 5V, VGS = 0V VGS = ±3V, VDS = 0V VGS = ±4.5V, VDS = 0V VGS = ±10V, VDS = 0V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS = 10V, ID = 400mA VGS = 0V, IS = 150mA VDS =16V, VGS = 0V, f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 10V, VGS = 4.5V, RL = 47Ω, Rg = 10Ω, ID = 200mA 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN2400UFB4 Document number: DS32025 Rev. 8 - 2 3 of 9 www.diodes.com March 2017 © Diodes Incorporated DMN2400UFB4 1.5 2.0 VGS = 4.5V VDS = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.5V )A ( T 1.0 N E R R U C N I A R D 0.5 ,D I 1.5 VGS = 2.0V 1.0 VGS = 1.8V 0.5 VGS = 1.5V TA = 150°C TA = 125°C TA = 85°C TA = 25°C TA = -55°C VGS = 1.2V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 0.8 ) ( E C N A T S IS E R -N O E C R U O S -N I A R D , )N 0.6 VGS = 1.8V 0.4 VGS = 2.5V VGS = 4.5V 0.2 0.8 VGS = 4.5V 0.6 TA= 150°C TA= 125°C 0.4 TA = 85°C TA = 25°C 0.2 TA = -55°C O (S D 0 R 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 VGS = 4.5V ID = 1.0A 1.4 VGS = 2.5.V ID = 500mA 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 (°C)) TJ, JUNCTION TEMPERATURE (癈 Fig. 5 On-Resistance Variation with Temperature DMN2400UFB4 Document number: DS32025 Rev. 8 - 2 4 of 9 www.diodes.com 0 0 0.25 0.50 0.75 1.00 1.25 1.50 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.8 0.6 VGS = 2.5V ID = 500mA 0.4 VGS = 4.5V ID = 1.0A 0.2 0 -50 -25 0 25 50 75 100 125 150 (°C)) TJ, JUNCTION TEMPERATURE (癈 Fig. 6 On-Resistance Variation with Temperature March 2017 © Diodes Incorporated DMN2400UFB4 2.0 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 IS, SOURCE CURRENT (A) 1.0 ID = 1mA 0.8 ID = 250礎 ID=250A 0.6 0.4 -25 60 Ciss 30 20 10 Coss C rss 0 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance )A 100,000 n ( T N E 10,000 R R U C E G 1,000 A K A E L E 100 C R U O S -E 10 T A G ,S 1 20 TA = 150°C TA = 85°C TA = 25°C TA = -55°C 4 6 8 10 12 VGS , GATE-SOURCE VOLTAGE (V) Fig. 11 Typical Gate-Source Leakage Current vs. Gate-Source Voltage DMN2400UFB4 Document number: DS32025 Rev. 8 - 2 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current I S G 5 of 9 www.diodes.com 1 1.2 TA = 150°C TA = 125°C TA = 85°C TA = -55°C TA = 25°C 4 6 8 10 12 14 16 18 20 VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage )A 100,000 n ( T N E 10,000 R R U C E G 1,000 A K A E L E 100 C R U O S -E 10 T A G ,S TA = 125°C 2 0 IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 40 IGSS, GATE-SOURCE LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) 0.8 )A 1,000 n ( T N E R R U C 100 E G A K A E L E C R 10 U O S -N I A R D ,S S D 1 I 2 f = 1MHz 50 IGSS, GATE-SOURCE LEAKAGE CURRENT (nA) 1.2 0 0 25 50 75 100 125 150 (°C)) TA, AMBIENT TEMPERATURE (癈 Fig. 7 Gate Threshold Variation vs. Ambient Temperature S G TA = 25癈 25°C 0.4 0.2 0 -50 I 1.6 TA = 150°C TA = 125°C TA = 85°C TA = 25°C TA = -55°C 2 4 6 8 10 12 VGS , GATE-SOURCE VOLTAGE (V) Fig. 12 Typical Gate-Source Leakage Current vs. Gate-Source Voltage March 2017 © Diodes Incorporated DMN2400UFB4 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA (t) = r(t) * R JA RJA = 253癈 /W 253°C/W D = 0.02 0.01 D = 0.01 P(pk) t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 DMN2400UFB4 Document number: DS32025 Rev. 8 - 2 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 13 Transient Thermal Response 6 of 9 www.diodes.com 10 100 1,000 March 2017 © Diodes Incorporated DMN2400UFB4 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. X2-DFN1006-3 A A1 Seating Plane D b Pin #1 ID e E b2 X2-DFN1006-3 Dim Min Max Typ A 0.40 A1 0.00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 z 0.02 0.08 0.05 All Dimensions in mm z L3 L2 L1 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X2-DFN1006-3 C Y Y1 G2 X G1 X1 DMN2400UFB4 Document number: DS32025 Rev. 8 - 2 7 of 9 www.diodes.com Dimensions C G1 G2 X X1 Y Y1 Value (in mm) 0.70 0.30 0.20 0.40 1.10 0.25 0.70 March 2017 © Diodes Incorporated DMN2400UFB4 Tape Information EMBOSSED CARRIER TAPE SPECIFICATIONS 8, 12, 16, 24mm EMBOSSED TAPE DIMENSIONS IN mm Tape Size D E Po tmax Ao Bo Ko 8mm 1.50 +0.10 –0.0 1.75 0.10 4.0 0.10 0.400 See Note 9 Constant Dimensions Tape Size B1 max D1 min F K max P2 R min W Package Type 8mm 4.5 0.35 3.5 0.05 2.4 2.0 0.05 25 8.0 0.30 Refer to 8mm Device Tape Orientation Table P Tape Size 8mm Note: 2.0 0.05 4.0 0.10 8.0 0.10 12.0 0.10 16.0 0.10 DFN1006 (-7B) DFN1006 (-7) DFN1006 (-7R) 9. Ao Bo Ko are determined by component size. DMN2400UFB4 Document number: DS32025 Rev. 8 - 2 8 of 9 www.diodes.com March 2017 © Diodes Incorporated DMN2400UFB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2017, Diodes Incorporated www.diodes.com DMN2400UFB4 Document number: DS32025 Rev. 8 - 2 9 of 9 www.diodes.com March 2017 © Diodes Incorporated