ASI MRF571 Npn silicon rf transistor Datasheet

MRF571
NPN SILICON RF TRANSISTOR
DESCRIPTION:
PACKAGE STYLE
The ASI MRF571 is Designed for lownoise, wide dynamic range front end
amplifiers.
Applications up to 2.0 GHz.
Dim. Are in mm
FEATURES:
• Low Noise Figure
• High Gain
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
70 mA
VCBO
20 V
VCEO
10 V
VEBO
3.0 V
PDISS
1.0 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
CHARACTERISTICS
SYMBOL
Leads 1 and 3 = Emitter
2 = Collector
4 = Base
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 0.1 mA
20
V
BVCEO
IC = 1.0 mA
10
V
BVEBO
IE = 500 µA
2.5
V
ICBO
VCB = 8.0 V
hFE
VCE = 5.0 V
Ccb
VCB = 6.0 V
GNF
VCE = 6.0 V
IC = 30 mA
IC = 10 mA
50
f = 1.0 MHz
0.7
f = 0.5 GHz
16.5
f = 1.0 GHz
VCE = 6.0 V
NF
IC = 10 mA
10
µA
300
---
1.0
pF
dB
12
f = 0.5 GHz
1.0
f = 1.0 GHz
1.5
f = 2.0 GHz
2.8
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
10
2.0
dB
REV. A
1/1
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