MRF571 NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF571 is Designed for lownoise, wide dynamic range front end amplifiers. Applications up to 2.0 GHz. Dim. Are in mm FEATURES: • Low Noise Figure • High Gain • Omnigold™ Metalization System MAXIMUM RATINGS IC 70 mA VCBO 20 V VCEO 10 V VEBO 3.0 V PDISS 1.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C CHARACTERISTICS SYMBOL Leads 1 and 3 = Emitter 2 = Collector 4 = Base TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 0.1 mA 20 V BVCEO IC = 1.0 mA 10 V BVEBO IE = 500 µA 2.5 V ICBO VCB = 8.0 V hFE VCE = 5.0 V Ccb VCB = 6.0 V GNF VCE = 6.0 V IC = 30 mA IC = 10 mA 50 f = 1.0 MHz 0.7 f = 0.5 GHz 16.5 f = 1.0 GHz VCE = 6.0 V NF IC = 10 mA 10 µA 300 --- 1.0 pF dB 12 f = 0.5 GHz 1.0 f = 1.0 GHz 1.5 f = 2.0 GHz 2.8 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 10 2.0 dB REV. A 1/1