FGH40N60SMDF tm 600V, 40A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, SMPS, IH and PFC applications where low conduction and switching losses are essential. • Positive Temperaure Co-efficient for easy parallel operating • High current capability • Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A • High input impedance • Fast switching • Tighten Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating C G E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ± 20 V IC ICM (1) IF IFM (1) PD Collector Current @ TC = 25oC 80 A Collector Current @ TC = 100oC 40 A Pulsed Collector Current Diode Forward Current @ TC = 25oC Diode Forward Current @ TC = 100oC Pulsed Diode Maximum Forward Current o 120 A 40 A 20 A 120 A W Maximum Power Dissipation @ TC = 25 C 349 Maximum Power Dissipation @ TC = 100oC 174 W TJ Operating Junction Temperature -55 to +175 o Tstg Storage Temperature Range -55 to +175 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature ©2011 Fairchild Semiconductor Corporation FGH40N60SMDF Rev. B1 1 www.fairchildsemi.com FGH40N60SMDF 600V, 40A Field Stop IGBT March 2011 Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 0.43 o RθJC(Diode) Thermal Resistance, Junction to Case - 1.45 oC/W RθJA Thermal Resistance, Junction to Ambient - 40 oC/W C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGH40N60SMDF FGH40N60SMDF TO-247 - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 - - V - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA ΔBVCES ΔTJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250μA - 0.6 ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 μA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250μA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 4.5 6.0 V IC = 40A, VGE = 15V - 1.9 2.5 V IC = 40A, VGE = 15V, TC = 175oC - 2.1 - V - 1880 - pF - 180 - pF - 50 - pF 16 ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - 12 tr Rise Time - 20 28 ns td(off) Turn-Off Delay Time - 92 120 ns tf Fall Time Eon Turn-On Switching Loss Eoff Ets VCC = 400V, IC = 40A, RG = 6Ω, VGE = 15V, Inductive Load, TC = 25oC - 13 17 ns - 1.3 2.0 mJ Turn-Off Switching Loss - 0.26 0.34 mJ Total Switching Loss - 1.56 2.34 mJ td(on) Turn-On Delay Time - 15 - ns tr Rise Time - 22 - ns td(off) Turn-Off Delay Time - 116 - ns tf Fall Time - 16 - ns VCC = 400V, IC = 40A, RG = 6Ω, VGE = 15V, Inductive Load, TC = 175oC Eon Turn-On Switching Loss - 2.1 - mJ Eoff Turn-Off Switching Loss - 0.6 - mJ Ets Total Switching Loss - 2.7 - mJ FGH40N60SMDF Rev. B1 2 www.fairchildsemi.com FGH40N60SMDF 600V, 40A Field Stop IGBT Thermal Characteristics Symbol Qg Parameter (Continued) Test Conditions Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 40A, VGE = 15V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge FGH40N60SMDF Rev. B1 Min. Typ. Max Units - 119 180 nC - 13 20 nC - 58 90 nC Units TC = 25°C unless otherwise noted Test Conditions IF = 20A IF =20A, dIF/dt = 200A/μs 3 Min. Typ. Max TC = 25oC - 1.3 1.7 TC = 175oC - 1.15 - TC = 175oC - 138 - - 70 100 - 210 - TC = 25oC TC = 175oC TC = 25oC - 250 350 TC = 175oC - 1875 - V uJ ns nC www.fairchildsemi.com FGH40N60SMDF 600V, 40A Field Stop IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 120 o TC = 25 C 20V 15V 120 12V o TC = 175 C 100 10V 80 60 VGE = 8V 40 12V 10V 80 60 VGE = 8V 40 20 20 0 0 2 4 Collector-Emitter Voltage, VCE [V] 0 6 0 Figure 3. Typical Saturation Voltage Characteristics 2 4 Collector-Emitter Voltage, VCE [V] 6 Figure 4. Transfer Characteristics 120 120 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C o TC = 175 C 80 TC = 25 C Collector Current, IC [A] 100 Collector Current, IC [A] 20V 15V 100 Collector Current, IC [A] Collector Current, IC [A] Figure 2. Typical Output Characteristics 60 40 90 T = 175oC C 60 30 20 0 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 0 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 Common Emitter VGE = 15V 80A 2.0 40A 1.5 IC = 20A 1.0 25 12 4 Common Emitter o TC = -40 C 16 12 8 40A 80A 4 IC = 20A 0 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] FGH40N60SMDF Rev. B1 4 6 8 10 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 3.0 2.5 2 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH40N60SMDF 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 8 40A 80A 4 IC = 20A 0 o TC = 175 C 16 12 8 80A 4 40A IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 4 20 Figure 9. Capacitance Characteristics 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 15 4000 Common Emitter Common Emitter VGE = 0V, f = 1MHz Gate-Emitter Voltage, VGE [V] o o TC = 25 C Capacitance [pF] 3000 Cies 2000 1000 Coes TC = 25 C 400V 12 VCC = 200V 300V 9 6 3 Cres 0 0.1 0 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 40 80 Gate Charge, Qg [nC] Figure 12. Turn-on Characteristics vs. Gate Resistance 300 100 10μs 100 tr 100μs 1ms 10 ms 10 Switching Time [ns] Collector Current, Ic [A] 120 DC 1 *Notes: 0.1 o td(on) 10 Common Emitter VCC = 400V, VGE = 15V IC = 40A 1. TC = 25 C o TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] FGH40N60SMDF Rev. B1 o TC = 175 C 1 1000 0 5 10 20 30 40 Gate Resistance, RG [Ω] 50 www.fairchildsemi.com FGH40N60SMDF 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 1000 1000 Common Emitter VGE = 15V, RG = 6Ω o TC = 25 C 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 40A 10 o Switching Time [ns] Switching Time [ns] td(off) TC = 175 C 100 tr 10 td(on) o TC = 25 C o TC = 175 C 1 0 10 20 30 40 1 20 50 30 40 Gate Resistance, RG [Ω] 50 60 70 80 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance 1000 5 Eon Switching Loss [mJ] Switching Time [ns] td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 6Ω o 1 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 25 C TC = 25 C o o TC = 175 C 1 20 30 40 50 60 TC = 175 C 70 0.1 80 0 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current 10 20 30 40 Gate Resistance, RG [Ω] 50 Figure 18. Turn off Switching SOA Characteristics 6 200 100 Collector Current, IC [A] Switching Loss [mJ] Eon 1 Eoff Common Emitter VGE = 15V, RG = 6Ω o TC = 25 C 10 Safe Operating Area o o TC = 175 C 0.1 20 30 40 50 60 70 VGE = 15V, TC = 175 C 1 80 1 Collector Current, IC [A] FGH40N60SMDF Rev. B1 10 100 1000 Collector-Emitter Voltage, VCE [V] 6 www.fairchildsemi.com FGH40N60SMDF 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 19. Current Derating Figure 20. Load Current Vs. Frequency 90 Square Wave 110 o TJ < 175 C, D = 0.5, VCE = 400V VGE = 15/0V, RG = 6Ω 100 70 Collector Current, IC [A] Collector Current, IC [A] 120 Common Emitter VGE = 15V 80 60 50 40 30 20 90 80 70 o Tc = 75 C 60 50 o Tc = 100 C 40 30 20 10 10 25 0 1k 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] Figure 21. Forward Characteristics 10k 100k Switching Frequency, f [Hz] 1M Figure 22. Reverse Current 100 1000 o Reverse Current, ICES [uA] Forward Current, IF [A] TC = 150 C o TC = 175 C 10 o TC = 25 C 100 10 o TC = 75 C 1 0.1 o TC = 25 C 0.01 o TC = 25 C o TC = 175 C 1 0.001 0 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 0 Figure 23. Stored Charge 200 300 400 Reverse Voltage,VR [V] 500 600 Figure 24. Reverse Recovery Time 2750 400 o o 2500 TC = 25 C Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] 100 o TC = 175 C 2250 2000 1750 1500 1250 1000 di/dt = 200A/μs 750 di/dt = 100A/μs 500 250 TC = 25 C 350 o TC = 175 C 300 250 200 di/dt = 100A/μs 150 di/dt = 200A/μs 100 50 0 0 0 5 10 FGH40N60SMDF Rev. B1 15 20 25 30 35 Forwad Current, IF [A] 40 0 45 7 5 10 15 20 25 30 Forward Current, IF [A] 35 40 45 www.fairchildsemi.com FGH40N60SMDF 600V, 40A Field Stop IGBT Typical Performance Characteristics FGH40N60SMDF 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 25.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.001 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGH40N60SMDF Rev. B1 8 www.fairchildsemi.com FGH40N60SMDF 600V, 40A Field Stop IGBT Mechanical Dimensions TO - 247AB (FKS PKG CODE 001) FGH40N60SMDF Rev. B1 9 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I53 FGH40N60SMDF Rev. 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