Freescale MW7IC2220NBR1 Rf ldmos wideband integrated power amplifier Datasheet

Freescale Semiconductor
Technical Data
Document Number: MW7IC2220N
Rev. 1, 1/2009
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2220N wideband integrated circuit is designed with on - chip
matching that makes it usable from 2000 to 2200 MHz. This multi - stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats including TD - SCDMA.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 80 mA,
IDQ2 = 300 mA, Pout = 2 Watts Avg., Full Frequency Band, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 31 dB
Power Added Efficiency — 13%
ACPR @ 5 MHz Offset — - 50 dBc in 3.84 MHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 20 Watts CW
Output Power
• Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 5 Watts
CW Pout.
• Typical Pout @ 1 dB Compression Point ' 20 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VDS1
RFin
RFout/VDS2
VGS1
Quiescent Current
Temperature Compensation (1)
VGS2
VDS1
MW7IC2220NR1
MW7IC2220GNR1
MW7IC2220NBR1
2110 - 2170 MHz, 2 W Avg., 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886 - 01
TO - 270 WB - 16
PLASTIC
MW7IC2220NR1
CASE 1887 - 01
TO - 270 WB - 16 GULL
PLASTIC
MW7IC2220GNR1
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW7IC2220NBR1
GND
VDS1
NC
NC
NC
1
2
3
4
5
16
15
GND
NC
RFin
6
14
RFout/VDS2
NC
VGS1
VGS2
VDS1
GND
7
8
9
10
11
13
12
NC
GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2008 - 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +5
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Input Power
Pin
20
dBm
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
2 W Avg.
(Pout = 2 W Avg., Case Temperature = 78°C)
20 W Avg.
(Pout = 20 W Avg., Case Temperature = 82°C)
RθJC
°C/W
Stage 1, 28 Vdc, IDQ1 = 80 mA
Stage 2, 28 Vdc, IDQ2 = 300 mA
4.3
1.5
Stage 1, 28 Vdc, IDQ1 = 80 mA
Stage 2, 28 Vdc, IDQ2 = 300 mA
4.3
1.25
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 23 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 80 mAdc)
VGS(Q)
—
2.8
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 80 mAdc, Measured in Functional Test)
VGG(Q)
9.5
12.2
16.5
Vdc
Characteristic
Stage 1 — Off Characteristics
Stage 1 — On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 150 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2 = 300 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ2 = 300 mAdc, Measured in Functional Test)
VGG(Q)
7
8
12.5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
0.2
0.39
1.2
Vdc
Coss
—
205
—
pF
Characteristic
Stage 2 — Off Characteristics
Stage 2 — On Characteristics
Stage 2 — Dynamic Characteristics (1)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Wideband 2110- 2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 = 300 mA,
Pout = 2 W Avg., f1 = 2112.5 MHz and f2 = 2167.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
29
31
34
dB
Power Added Efficiency
PAE
11
13
—
%
ACPR
—
- 50
- 47
dBc
IRL
—
- 14
- 12
dB
Adjacent Channel Power Ratio
Input Return Loss
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 = 300 mA, 2110- 2170 MHz
Pout @ 1 dB Compression Point, CW
P1dB
—
20
—
—
40
—
W
IMD Symmetry @ 18 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
70
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 2 W Avg.
GF
—
0.6
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 20 W CW
Φ
—
1.2
—
°
Delay
—
2.5
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 20 W CW,
f = 2140 MHz, Six Sigma Window
ΔΦ
—
15
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.036
—
dB/°C
ΔP1dB
—
0.003
—
dBm/°C
Average Group Delay @ Pout = 20 W CW, f = 2140 MHz
Output Power Variation over Temperature
( - 30°C to +85°C)
MHz
1. Part internally matched both on input and output.
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
3
+
C26
VDD2
1
2
3
4
5
VDD1
C9
RF
INPUT
Z2
Z1
C10
Z3
NC
DUT
16
C16
15
NC
NC
NC
C17
C18
Z8
C13
Z9
C19
C20
Z13
Z4
14
Z5
Z6
C11
Z7
Z10
Z11
Z12
RF
OUTPUT
6
C1
VGG1
C2
7 NC
8
9
R1
10
11 NC
C14
Z14
Quiescent Current
Temperature
Compensation
13
12
C21
C3
VGG2
C15
C12
C22
C23
C24
C25
R2
C5
C4
Z1
Z2
Z3
Z4
Z5
Z6
Z7
C6
C7
C8
0.090″ x 0.083″ Microstrip
2.107″ x 0.083″ Microstrip
0.016″ x 0.083″ x 0.055″ Taper
0.106″ x 0.055″ Microstrip
0.570″ x 0.322″ Microstrip
0.204″ x 0.322″ Microstrip
0.050″ x 0.322″ Microstrip
Z8
Z9
Z10
Z11
Z12
Z13, Z14
PCB
0.263″ x 0.123″ Microstrip
0.125″ x 0.123″ Microstrip
0.280″ x 0.083″ Microstrip
0.373″ x 0.083″ Microstrip
0.364″ x 0.083″ Microstrip
0.564″ x 0.083″ Microstrip
Arlon CuClad 250GX - 0300- 55- 22, 0.030″, εr = 2.55
Figure 3. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Schematic
Table 6. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
0.1 pF Chip Capacitor
ATC100B0R1JT500XT
ATC
C2, C3
8.2 pF Chip Capacitors
ATC100B8R2BT500XT
ATC
C4
4.7 μF, 50 V Chip Capacitor
C4532X7R1H475KT
TDK
C5, C6
0.4 pF Chip Capacitors
ATC100B0R4JT500XT
ATC
C7, C9
10 μF, 50 V Chip Capacitors
C3225Y5V1H106ZT
TDK
C8, C10
5.6 pF Chip Capacitors
ATC100B5R6JT500XT
ATC
C11, C12
0.3 pF Chip Capacitors
ATC100B0R3JT500XT
ATC
C13
0.8 pF Chip Capacitor
ATC100B0R8JT500XT
ATC
C14
1.1 pF Chip Capacitor
ATC100B1R1JT500XT
ATC
C15, C16, C21
9.1 pF Chip Capacitors
ATC100B9R1JT500XT
ATC
C17, C22
0.1 μF, 250 V Chip Capacitors
C3216X7R2E104KT
TDK
C18, C23
6.8 μF, 50 V Chip Capacitors
C4532X7R1H685KT
TDK
C19, C24
4.7 μF, 50 V Chip Capacitors
C4532X7R1H475KT
TDK
C20, C25
10 μF, 50 V Chip Capacitors
C3225Y5V1H106ZT
TDK
C26
470 μF, 63 V Electrolytic Capacitor
477KXM063M
Illinois
R1, R2
10 KΩ, 1/4 W Chip Resistors
CRCW12061002FKEA
Vishay
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
4
RF Device Data
Freescale Semiconductor
C26
C16
C17
C9
C10
C1
C5
C8
MW7IC2220N
Rev. 0
C11
C13
C15
C12
C14
C23 C24
C6
VGG1 C2 R1
CUT OUT AREA
C18 C19 C20
C3 R2
C4
C7
C25
C21
C22
Figure 4. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Layout
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
5
14
VDD = 28 Vdc, Pout = 2 W (Avg.), IDQ1 = 80 mA, IDQ2 = 300 mA
13
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
12
30.9
ηD
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
Gps
10
30.5
PARC
30.1
11
IRL
−44
−14
−46
−15
29.7
−48
29.3
−50
ACPR
28.9
28.5
2060
2080
−52
2100
2120
2140
2160
2180
−16
−17
−18
−54
2220
2200
−19
0
−0.2
−0.4
−0.6
PARC (dB)
Gps, POWER GAIN (dB)
31.7
31.3
IRL, INPUT RETURN LOSS (dB)
32.1
ACPR (dBc)
32.5
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
−0.8
−1
f, FREQUENCY (MHz)
Gps, POWER GAIN (dB)
31.5
Gps
31
21.5
VDD = 28 Vdc, Pout = 5 W (Avg.), IDQ1 = 80 mA
IDQ2 = 300 mA, Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth, Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
30.5 ACPR
30
29.5
IRL
20.5
20
−37
−10
−38
−15
−39
−40
29 PARC
−41
28.5
28
2060
21
2080
2100
2120
2140
2160
2180
2200
−42
2220
−20
−25
−30
−35
−0.2
−0.4
−0.6
−0.8
PARC (dB)
ηD
32
IRL, INPUT RETURN LOSS (dB)
32.5
22
ACPR (dBc)
33
ηD, DRAIN
EFFICIENCY (%)
Figure 5. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 2 Watts Avg.
−1
−1.2
f, FREQUENCY (MHz)
Figure 6. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 5 Watts Avg.
33
33
IDQ2 = 450 mA
375 mA
31 300 mA
30
29 150 mA
225 mA
28
100 mA
31
80 mA
30
60 mA
29
28
40 mA
VDD = 28 Vdc
IDQ1 = 80 mA
f = 2140 MHz
27
IDQ1 = 120 mA
32
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
32
27
26
VDD = 28 Vdc
IDQ2 = 300 mA
f = 2140 MHz
26
1
10
50
1
10
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain versus Output Power
@ IDQ1 = 80 mA
Figure 8. Power Gain versus Output Power
@ IDQ2 = 300 mA
50
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
6
RF Device Data
Freescale Semiconductor
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
−10
VDD = 28 Vdc, Pout = 18 W (PEP), IDQ1 = 80 mA
IDQ2 = 300 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
−20
−30
IM3−U IM3−L
−40
IM5−L
IM5−U
−50
IM7−L
−60
IM7−U
−70
10
1
100
TWO−TONE SPACING (MHz)
Figure 9. Intermodulation Distortion Products
versus Tone Spacing
30
29.5
29
28.5
Gps
0
40
−25
35
−30
PARC
−1
30
−1 dB = 6.36 W
−2
25
−3 dB = 12.7 W
ACPR
−2 dB = 9.45 W
−3
VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 = 300 mA, f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
−4
ηD
−5
20
2
4
6
10
8
−35
−40
ACPR (dBc)
30.5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
31
1
ηD, DRAIN EFFICIENCY (%)
31.5
−45
15
−50
10
−55
14
12
Pout, OUTPUT POWER (WATTS)
45
−15
−30°C
ηD
85°C −20
25°C
−25
−30°C
−30
ACPR
−35
40
Gps
35
TC = −30°C
30
25
25°C
20
85°C
25°C
−40
VDD = 28 Vdc, IDQ1 = 80 mA
IDQ2 = 300 mA, f = 2140 MHz
Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
15
10
5
0
1
10
−45
ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 10. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
−50
−55
−60
50
Pout, OUTPUT POWER (WATTS) AVG.
Figure 11. Single - Carrier W - CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
109
0
36
−5
24
−10
S11
18
−15
12
−20
2nd Stage
108
MTTF (HOURS)
30
S11 (dB)
S21 (dB)
S21
1st Stage
107
106
VDD = 28 Vdc
IDQ1 = 80 mA, IDQ2 = 300 mA
6
1600
1750
1900
2050
2200
2350
2500
2650
105
−25
2800
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 2 W Avg., and PAE = 13%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100
−10
3.84 MHz
Channel BW
−20
10
1
−40
Input Signal
−50
0.1
(dB)
PROBABILITY (%)
−30
0.01
−70
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
0
2
4
6
−60
−80
−ACPR in 3.84 MHz
Integrated BW
−90
8
10
−ACPR in 3.84 MHz
Integrated BW
−100
PEAK−TO−AVERAGE (dB)
Figure 14. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
−110
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 15. Single - Carrier W - CDMA Spectrum
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
8
RF Device Data
Freescale Semiconductor
Zo = 50 Ω
f = 2220 MHz
f = 2060 MHz
f = 2220 MHz
Zload
Zin
f = 2060 MHz
VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 = 300 mA, Pout = 2 W Avg.
f
MHz
Zin
W
Zload
W
2060
49.57 - j3.62
11.06 - j3.26
2080
49.49 - j3.77
10.83 - j2.96
2100
49.42 - j3.94
10.55 - j2.62
2120
49.35 - j4.12
10.30 - j2.23
2140
49.30 - j4.29
10.08 - j1.86
2160
49.25 - j4.48
9.86 - j1.51
2180
49.21 - j4.67
9.65 - j1.13
2200
49.17 - j4.86
9.45 - j0.76
49.15 - j5.06
9.25 - j0.40
2220
Zin
=
Device input impedance as measured from
gate to ground.
Zload =
Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 16. Series Equivalent Input and Load Impedance
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
9
Table 7. Common Source S - Parameters (VDD = 28 V, IDQ1 = 90 mA, IDQ2 = 420 mA, TC = 25°C, 50 Ohm System)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
1500
0.452
134
0.356
7.81
0.001
- 108
0.979
160
1550
0.407
117
0.757
- 7.8
0.000
- 67.7
0.969
157
1600
0.354
96.5
1.430
- 31
0.000
- 65.8
0.955
154
1650
0.316
85.1
2.330
- 52.1
0.001
- 27.1
0.935
151
1700
0.279
68
3.690
- 73.6
0.001
- 43.4
0.909
148
1750
0.222
49.5
5.800
- 93.3
0.002
- 21.9
0.878
143
1800
0.140
30.4
9.570
- 113
0.003
- 24.8
0.833
137
1850
0.046
21.9
17.000
- 137
0.004
- 33.7
0.737
124
1900
0.094
135
33.600
- 173
0.007
- 41.8
0.476
91.7
1950
0.238
56.4
58.300
124
0.009
- 86.4
0.396
- 79.7
2000
0.254
- 29.2
47.800
59.5
0.006
- 118
0.873
- 149
2050
0.241
- 84.1
34.300
22.9
0.004
- 122
0.927
- 171
2100
0.252
- 120
27.700
- 3.98
0.004
- 125
0.911
- 179
2150
0.201
- 142
23.900
- 28.2
0.003
- 128
0.891
177
2200
0.174
- 162
21.100
- 51.8
0.003
- 130
0.878
175
2250
0.148
168
18.800
- 75.9
0.003
- 131
0.872
175
2300
0.135
103
15.800
- 100
0.003
- 139
0.882
175
2350
0.197
35.4
12.600
- 118
0.003
- 155
0.906
174
2400
0.244
1.73
11.100
- 132
0.002
- 156
0.919
173
2450
0.291
- 11.1
10.400
- 147
0.002
- 157
0.926
171
2500
0.340
- 19
9.750
- 163
0.002
- 147
0.933
170
2550
0.391
- 26.9
9.230
- 179
0.001
- 150
0.938
169
2600
0.435
- 35.2
8.760
164
0.001
- 144
0.942
168
2650
0.475
- 44.4
8.290
146
0.001
- 137
0.945
166
2700
0.455
- 46
7.050
129
0.001
- 90.2
0.950
166
2750
0.535
- 60.2
6.690
112
0.001
- 106
0.955
164
2800
0.571
- 71.2
5.980
95.1
0.001
- 103
0.955
163
2850
0.598
- 82
5.170
78.5
0.002
- 96.5
0.954
162
2900
0.623
- 92.9
4.370
63.1
0.002
- 103
0.955
162
2950
0.643
- 102
3.690
48.7
0.002
- 96.2
0.954
161
3000
0.668
- 109
3.100
35.4
0.002
- 106
0.951
161
3050
0.681
- 116
2.580
22.7
0.002
- 107
0.952
161
3100
0.694
- 121
2.130
11
0.002
- 87.9
0.957
160
3150
0.712
- 124
1.760
- 0.057
0.002
- 96.1
0.959
160
3200
0.724
- 127
1.440
- 10.9
0.002
- 99.6
0.959
160
3250
0.726
- 130
1.170
- 21.1
0.002
- 82.4
0.962
159
3300
0.705
- 130
0.928
- 28.7
0.003
- 66.9
0.963
159
3350
0.743
- 132
0.780
- 37
0.003
- 77.2
0.959
158
3400
0.748
- 135
0.652
- 44.3
0.003
- 88
0.955
157
3450
0.753
- 137
0.555
- 50.3
0.003
- 78.6
0.955
156
(continued)
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
10
RF Device Data
Freescale Semiconductor
Table 7. Common Source S - Parameters (VDD = 28 V, IDQ1 = 90 mA, IDQ2 = 420 mA, TC = 25°C, 50 Ohm System) (continued)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
3500
0.759
- 140
0.486
- 56.1
0.004
- 81.1
0.954
155
3550
0.765
- 144
0.440
- 62.4
0.004
- 82
0.946
154
3600
0.770
- 148
0.401
- 69.7
0.004
- 85.9
0.941
153
3650
0.774
- 153
0.370
- 77.4
0.005
- 96.4
0.941
151
3700
0.780
- 159
0.338
- 85.1
0.006
- 94.9
0.940
150
3750
0.795
- 164
0.306
- 93.2
0.006
- 99.3
0.933
148
3800
0.810
- 170
0.273
- 101
0.008
- 110
0.928
146
3850
0.821
- 175
0.239
- 107
0.008
- 113
0.934
145
3900
0.839
- 178
0.207
- 111
0.008
- 112
0.936
144
3950
0.855
179
0.178
- 114
0.008
- 117
0.927
144
4000
0.862
176
0.156
- 116
0.008
- 123
0.935
144
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
11
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
52
51
51
Ideal
P3dB = 46.95 dBm (50 W)
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
50
49
P1dB = 45.93 dBm (39 W)
48
47
VDD = 28 Vdc, IDQ1 = 90 mA
46 IDQ2 = 420 mA, Pulsed CW
10 μsec(on), 10% Duty Cycle
45 f = 2110 MHz
Actual
P1dB = 46.99 dBm (50 W)
Actual
47
46
45
44
43
42
VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA
Pulsed CW, 10 μsec(on), 10% Duty Cycle
f = 2170 MHz
41
44
40
7
8
9
10
11
12
13
14
15
16
17
18
19
Ideal
P3dB = 48.06 dBm (64 W)
50
49
48
7
8
9
10
11
12
13
14
15
16
17
18
19
Pin, INPUT POWER (dBm)
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
Test Impedances per Compression Level
P1dB
Zsource
Ω
Zload
Ω
40.41 + j2.31
3.13 - j4.89
Figure 17. Pulsed CW Output Power
versus Input Power @ 28 V @ 2110 MHz
P1dB
Zsource
Ω
Zload
Ω
44.66 - j5.79
3.06 - j5.22
Figure 18. Pulsed CW Output Power
versus Input Power @ 28 V @ 2170 MHz
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
12
RF Device Data
Freescale Semiconductor
+
C23
VDD2
1
2
3
4
5
VDD1
C9
RF
INPUT
Z2
Z1
C10
Z3
NC
DUT
16
C13
15
NC
NC
NC
C14
C15
C16
C17
Z11
Z4
14
Z5
Z6
Z7
Z8
Z9
Z10
RF
OUTPUT
6
C12
C1
VGG1
C2
7 NC
8
9
R1
10
11 NC
C11
Z12
Quiescent Current
Temperature
Compensation
13
12
C18
C3
VGG2
C19
C20
C21
C22
R2
C5
C4
Z1
Z2
Z3
Z4
Z5
Z6
C6
C7
C8
0.090″ x 0.083″ Microstrip
2.107″ x 0.083″ Microstrip
0.016″ x 0.083″ x 0.055″ Taper
0.106″ x 0.055″ Microstrip
0.570″ x 0.322″ Microstrip
0.254″ x 0.322″ Microstrip
Z7
Z8
Z9
Z10
Z11, Z12
PCB
0.388″ x 0.123″ Microstrip
0.330″ x 0.083″ Microstrip
0.323″ x 0.083″ Microstrip
0.364″ x 0.083″ Microstrip
0.564″ x 0.083″ Microstrip
Arlon CuClad 250GX - 0300- 55- 22, 0.030″, εr = 2.55
Figure 19. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Schematic — TD - SCDMA
Table 8. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — TD - SCDMA
Part
Description
Part Number
Manufacturer
C1
1 pF Chip Capacitor
ATC100B1R0JT500XT
ATC
C2, C3
8.2 pF Chip Capacitors
ATC100B8R2BT500XT
ATC
C4
4.7 μF, 50 V Chip Capacitor
C4532X7R1H475KT
TDK
C5, C6
0.4 pF Chip Capacitors
ATC100B0R4JT500XT
ATC
C7, C9
10 μF, 50 V Chip Capacitors
C3225Y5V1H106ZT
TDK
C8, C10
5.6 pF Chip Capacitors
ATC100B5R6JT500XT
ATC
C11
1.1 pF Chip Capacitor
ATC100B1R1JT500XT
ATC
C12, C13, C18
9.1 pF Chip Capacitors
ATC100B9R1JT500XT
ATC
C14, C19
0.1 μF, 250 V Chip Capacitors
C3216X7R2E104KT
TDK
C15, C20
6.8 μF, 50 V Chip Capacitors
C4532X7R1H685KT
TDK
C16, C21
4.7 μF, 50 V Chip Capacitors
C4532X7R1H475KT
TDK
C17, C22
10 μF, 50 V Chip Capacitors
C3225Y5V1H106ZT
TDK
C23
470 μF, 63 V Electrolytic Capacitor
477KXM063M
Illinois
R1, R2
11 Ω, 1/4 W Chip Resistors
CRCW120611R0FKEA
Vishay
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
13
C23
C13
C14
C9
C10
C1
C5
C8
MW7IC2220N
Rev. 0
C12
C11
C20 C21
C6
VGG1 C2 R1
CUT OUT AREA
C15 C16 C17
C3 R2
C7
C4
C22
C18
C19
Figure 20. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Layout — TD - SCDMA
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
14
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
0
30
6−Carrier TD−SCDMA
VD1 = VD2 = 28 V
IDQ1 = 190 mA, IDQ2 = 300 mA
f = 2017.5 MHz
PAR = 7.7 dB
−20
25
ηD
20
Adj−L
Adj−U
15
−30
Alt−L
Alt−U
−40
10
−50
5
−60
ηD, DRAIN EFFICIENCY (%)
ALT/ACPR (dBc)
−10
0
0
2
4
6
8
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 21. 6 - Carrier TD - SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
TD - SCDMA TEST SIGNAL
−30
1.28 MHz
Channel BW
−40
−50
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
−60
(dBm)
−70
−80
−90
−ALT2 in
1.28 MHz BW
−3.2 MHz Offset
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
−100
−110
−120
−ALT1 in
1.28 MHz BW
−1.6 MHz Offset
−130
Center 2.0175 GHz
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
2.5 MHz
Span 25 MHz
f, FREQUENCY (MHz)
Figure 22. 6 - Carrier TD - SCDMA Spectrum
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
15
Zo = 50 Ω
f = 1950 MHz
Zin
f = 2070 MHz
f = 2070 MHz
f = 1950 MHz
Zload
VDD = 28 Vdc, IDQ1 = 190 mA, IDQ2 = 300 mA
f
MHz
Zin
W
Zload
W
1950
50 + j0
15.539 - j10.702
1960
50 + j0
14.953 - j10.522
1970
50 + j0
14.373 - j10.327
1980
50 + j0
13.837 - j10.120
1990
50 + j0
13.294 - j9.886
2000
50 + j0
12.768 - j9.608
2010
50 + j0
12.275 - j9.298
2020
50 + j0
11.832 - j9.000
2030
50 + j0
11.422 - j8.708
2040
50 + j0
11.015 - j8.441
2050
50 + j0
10.621 - j8.175
2060
50 + j0
10.235 - j7.916
2070
50 + j0
9.868 - j7.644
Zin
= Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 23. Series Equivalent Input and Load Impedance — TD - SCDMA
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
16
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
17
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
18
RF Device Data
Freescale Semiconductor
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
19
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
20
RF Device Data
Freescale Semiconductor
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
21
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
22
RF Device Data
Freescale Semiconductor
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
23
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
24
RF Device Data
Freescale Semiconductor
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
25
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2008
• Initial Release of Data Sheet
1
Jan. 2009
• Added Fig. 13, MTTF versus Junction Temperature, p. 8
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
26
RF Device Data
Freescale Semiconductor
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MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
Document
RF
DeviceNumber:
Data MW7IC2220N
Rev. 1, 1/2009
Freescale
Semiconductor
27