MCR265−4 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for inverse parallel SCR output devices for solid state relays, welders, battery chargers, motor controls or applications requiring high surge operation. • Photo Glass Passivated Blocking Junctions for High Temperature Stability, Center Gate for Uniform Parameters • 550 Amperes Surge Capability • Blocking Voltage to 800 Volts • Device Marking: Logo, Device Type, e.g., MCR265−4, Date Code http://onsemi.com SCRs 55 AMPERES RMS 200 thru 800 VOLTS G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage(1) (TJ = 25 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR265−4 MCR265−6 MCR265−8 MCR265−10 VDRM, VRRM On-State RMS Current (180° Conduction Angles; TC = 70°C) IT(RMS) 55 Amps Average On-State Current (180° Conduction Angles; TC = 70°C) IT(AV) 35 Amps Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 70°C) ITSM 550 Amps Forward Peak Gate Power (Pulse Width ≤ 1.0 μs, TC = 70°C) PGM 20 Watts PG(AV) 0.5 Forward Average Gate Power (t = 8.3 ms, TC = 70°C) Value A Unit K Volts 200 400 600 800 4 1 2 3 TO−220AB CASE 221A STYLE 3 PIN ASSIGNMENT Watt Forward Peak Gate Current (Pulse Width ≤ 1.0 μs, TC = 70°C) IGM 2.0 Amps Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device is to be used at high sustained currents. 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION Device Package Shipping MCR265−4 TO220AB 500/Box MCR265−6 TO220AB 500/Box MCR265−8 TO220AB 500/Box MCR265−10 TO220AB 500/Box Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 3 1 Publication Order Number: MCR265/D MCR265−4 Series THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.9 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit — — — — 10 2.0 μA mA — 1.5 1.9 Volts — — 20 40 50 90 OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C TJ = 125°C IDRM , IRRM ON CHARACTERISTICS Peak Forward On−State Voltage(1) (ITM = 110 A) VTM Gate Trigger Current (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms) (TC = −40°C) IGT Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms) VGT — 1.0 1.5 Volts Gate Non-Trigger Voltage (VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C) VGD 0.2 — — Volts Holding Current (VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) IH — 30 75 mA Turn-On Time (ITM = 55 A, IGT = 200 mAdc) tgt — 1.5 — μs dv/dt — 50 — V/μs mA DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (Gate Open, VD = Rated VDRM, Exponential Waveform) (1) Pulse Width p 300 μs, Duty Cycle p 2%. http://onsemi.com 2 MCR265−4 Series Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode − P(AV) , AVERAGE POWER (WATTS) 60 TC, MAXIMUM CASE TEMPERATURE ( ° C) 125 121 117 113 109 105 101 97 93 89 85 81 77 73 69 α α = CONDUCTION ANGLE α = 30° dc 60° 90° 4.0 8.0 12 16 20 24 32 36 60° 42 dc 36 30 α = 30° 24 18 α α = CONDUCTION ANGLE 12 6.0 180° 28 90° 48 0 0 180° 54 40 0 5.0 10 15 20 25 30 35 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)* Figure 1. Average Current Derating Figure 2. Maximum On−State Power Dissipation http://onsemi.com 3 40 MCR265−4 Series 2.5 3.0 NORMALIZED GATE VOLTAGE VD = 12 Vdc 1.5 1.0 0.7 0.5 0.4 0.3 0.25 −60 −40 −20 0 20 40 60 80 100 120 NORMALIZED HOLDING CURRENT r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) VD = 12 Vdc 1.5 1.0 0.8 0.5 −40 −20 0 20 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Typical Gate Trigger Current Figure 4. Typical Gate Trigger Voltage 3.0 2.0 VD = 12 Vdc 1.0 0.7 0.5 0.3 − 60 2.0 0.3 −60 140 I TM , INSTANTANEOUS ON-STATE CURRENT (AMPS) NORMALIZED GATE CURRENT 2.0 − 40 − 20 0 20 40 60 80 100 120 140 140 1000 100 TJ = 25°C 10 1.0 0 1.0 2.0 3.0 TJ, JUNCTION TEMPERATURE (°C) VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 5. Typical Holding Current Figure 6. Typical On−State Characteristics 1.0 0.7 0.5 0.3 0.2 ZθJC(t) = RθJC • r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 t, TIME (ms) Figure 7. Thermal Response http://onsemi.com 4 200 300 500 1k 2k 3k 5k 10k MCR265−4 Series PACKAGE DIMENSIONS TO−220AB CASE 221A−07 ISSUE Z −T− B F 4 Q T SEATING PLANE C S A U 1 2 3 H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 CATHODE ANODE GATE ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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