MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. http://onsemi.com 3 Cathode Features • • • • • • • • • 225 mW Rating on FR−4 or FR−5 Board Zener Voltage Range − 2.4 V to 91 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power − 225 W (8 x 20 ms) AEC−Q101 Qualified and PPAP Capable SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb−Free Packages are Available Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 Rating Symbol Max Unit Ppk 225 W Total Power Dissipation on FR−5 Board, (Note 2) @ TA = 25°C Derated above 25°C PD RqJA PD 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse per Figure 9. 2. FR−5 = 1.0 X 0.75 X 0.62 in. 3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina. © Semiconductor Components Industries, LLC, 2011 December, 2011 − Rev. 7 3 1 2 SOT−23 CASE 318 STYLE 8 Bxx M G G 1 Bxx xx M G = Device Code = (Refer to page 2) = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Package Shipping† MMBZ52xxELT1G SOT−23 (Pb−Free) 3000 / Tape & Reel SZMMBZ52xxELT1G SOT−23 (Pb−Free) 3000 / Tape & Reel MMBZ52xxELT3G SOT−23 (Pb−Free) 10000 / Tape & Reel Device Peak Power Dissipation @ 20 ms (Note 1) @ TL ≤ 25°C Total Power Dissipation on Alumina Substrate, (Note 3) @ TA = 25°C Derated above 25°C MARKING DIAGRAM ORDERING INFORMATION MAXIMUM RATINGS Thermal Resistance, Junction−to−Ambient 1 Anode 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. Publication Order Number: MMBZ5221ELT1/D MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series ELECTRICAL CHARACTERISTICS I (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK VZ VR IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF V IR VF IZT Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.) Zener Voltage (Note 4) VZ (V) Zener Impedance @ IZT ZZT @ IZT Leakage Current ZZK @ IZK IR @ VR Device Marking Min Nom Max mA W W mA mA V MMBZ5221ELT1/T3G BE2 2.28 2.4 2.52 20 30 1200 0.25 100 1 MMBZ5226ELT1/T3G BE7 3.13 3.3 3.47 20 28 1600 0.25 25 1 MMBZ5228ELT1/T3G BE9 3.70 3.9 4.10 20 23 1900 0.25 10 1 MMBZ5229ELT1/T3G BF1 4.08 4.3 4.52 20 22 2000 0.25 5 1 MMBZ5230ELT1/T3G BF2 4.46 4.7 4.94 20 19 1900 0.25 5 2 MMBZ5231ELT1/T3G BF3 4.84 5.1 5.36 20 17 1600 0.25 5 2 MMBZ5232ELT1/T3G BF4 5.32 5.6 5.88 20 11 1600 0.25 5 3 MMBZ5234ELT1/T3G BF6 5.89 6.2 6.51 20 7 1000 0.25 5 4 MMBZ5235ELT1/T3G BF7 6.46 6.8 7.14 20 5 750 0.25 3 5 MMBZ5236ELT1/T3G BF8 7.12 7.5 7.88 20 6 500 0.25 3 6 MMBZ5237ELT1/T3G BF9 7.79 8.2 8.61 20 8 500 0.25 3 6.5 MMBZ5239ELT1/T3G BG2 8.65 9.1 9.55 20 10 600 0.25 3 7 MMBZ5240ELT1/T3G BG3 9.50 10 10.50 20 17 600 0.25 3 8 MMBZ5242ELT1/T3G BG5 11.40 12 12.60 20 30 600 0.25 1 9.1 MMBZ5243ELT1/T3G BG6 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 MMBZ5244ELT1/T3G BG7 13.30 14 14.70 9 15 600 0.25 0.1 10 MMBZ5245ELT1/T3G BG8 14.25 15 15.75 8.5 16 600 0.25 0.1 11 MMBZ5246ELT1G† BG9 15.20 16 16.80 7.8 17 600 0.25 0.1 12 MMBZ5248ELT1/T1G BH2 17.10 18 18.90 7 21 600 0.25 0.1 14 MMBZ5250ELT1/T3G BH4 19.00 20 21.00 6.2 25 600 0.25 0.1 15 Device* 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. *Includes SZ−prefix devices where applicable. †MMBZ5246EL, MMBZ5252EL, and MMBZ5265EL Not Available in 10,000/Tape & Reel. http://onsemi.com 2 MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series ELECTRICAL CHARACTERISTICS (continued) (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.) Zener Voltage (Note 5) VZ (V) Zener Impedance @ IZT ZZT @ IZT Leakage Current ZZK @ IZK IR @ VR Device Marking Min Nom Max mA W W mA mA V MMBZ5252ELT1G† BH6 22.80 24 25.20 5.2 33 600 0.25 0.1 18 MMBZ5253ELT1/T3G BH7 23.75 25 26.25 5 35 600 0.25 0.1 19 MMBZ5254ELT1/T3G BH8 25.65 27 28.35 4.6 41 600 0.25 0.1 21 MMBZ5255ELT1/T3G BH9 26.60 28 29.40 4.5 44 600 0.25 0.1 21 MMBZ5256ELT1/T3G BJ1 28.50 30 31.50 4.2 49 600 0.25 0.1 23 MMBZ5257ELT1/T3G BJ2 31.35 33 34.65 3.8 58 700 0.25 0.1 25 MMBZ5258ELT1/T3G BJ3 34.20 36 37.80 3.4 70 700 0.25 0.1 27 MMBZ5261ELT1G BJ6 49.35 47 44.65 2.7 105 1000 0.25 0.1 36 MMBZ5262ELT1/T3G BJ7 48.45 51 53.55 2.5 125 1100 0.25 0.1 37 MMBZ5263ELT1/T3G BJ8 53.20 56 58.80 2.2 150 1300 0.25 0.1 43 MMBZ5265ELT1G† BK1 58.90 62 65.10 2 185 1400 0.25 0.1 47 Device* 5. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. *Includes SZ−prefix devices where applicable. †MMBZ5246EL, MMBZ5252EL, and MMBZ5265EL Not Available in 10,000/Tape & Reel. http://onsemi.com 3 MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series 8 100 7 θ VZ, TEMPERATURE COEFFICIENT (mV/°C) θ VZ, TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES FOR MMBZ52xxBLT1G SERIES, SZMMBZ52xxBLT1G SERIES 6 5 4 VZ @ IZT 3 VZ @ IZT 10 2 1 0 −1 −2 −3 TYPICAL TC VALUES FOR MMBZ52xxBLT1G SERIES, SZMMBZ52xxBLT1G SERIES 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 IZ = 1 mA TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE ( Ω ) 1000 100 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 3. Effect of Zener Voltage on Zener Impedance 0.5 75°C 25°C 0°C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 4. Typical Forward Voltage http://onsemi.com 4 1.1 1.2 MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS I R , LEAKAGE CURRENT (m A) TA = 25°C 100 BIAS AT 50% OF VZ NOM 100 10 1 +150°C 0.1 0.01 10 +25°C 0.00 1 0.0001 1 1 -55°C 0.00001 0 100 10 VZ, NOMINAL ZENER VOLTAGE (V) 10 Figure 5. Typical Capacitance 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) Figure 6. Typical Leakage Current 100 100 TA = 25°C I Z , ZENER CURRENT (mA) 10 1 0.1 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 1 0.1 0.01 12 10 10 10 100 50 70 VZ, ZENER VOLTAGE (V) PEAK VALUE IRSM @ 8 ms tr 90 30 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 50 HALF VALUE IRSM/2 @ 20 ms 40 30 tP 20 10 0 0 20 90 Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) % OF PEAK PULSE CURRENT I Z , ZENER CURRENT (mA) TA = 25°C 0.01 80 40 60 t, TIME (ms) Figure 9. 8 × 20 ms Pulse Waveform http://onsemi.com 5 80 90 MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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