Two-color detector K12729-010K Wide spectral response range: 0.9 to 2.55 μm Compact ceramic package The K12729-010K is a two-color detector in a compact ceramic package, covering a wide spectral response range. Like the current K11908-010K, it incorporates two InGaAs PIN photodiodes with different spectral response, along the same optical axis. It features low noise and low dark current and supports reflow soldering. Features Applications Wide spectral response range Spectrophotometers Compact, low noise, low dark current Radiation thermometers Supports reflow soldering Structure Parameter Window material Package Photosensitive area Symbol - Condition Specification Borosilicate glass Ceramic 2.4 × 2.4 ϕ1.0 InGaAs (λc=1.7 μm) InGaAs (λc=2.55 μm) Unit mm Absolute maximum ratings Parameter Symbol Condition Value Unit InGaAs (λc=1.7 μm), Ta=25 °C 2 Reverse voltage VR max V InGaAs (λc=2.55 μm), Ta=25 °C 1 Operating temperature Topr No condensation -20 to +70 °C Storage temperature Tstg No condensation -20 to +85 °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Symbol λ λp Photosensitivity S Dark current ID Cutoff frequency fc Terminal capacitance Ct Shunt resistance Rsh Detectivity D* Condition InGaAs (λc=1.7 μm) InGaAs (λc=2.55 μm) InGaAs (λc=1.7 μm) InGaAs (λc=2.55 μm) InGaAs (λc=1.7 μm), λ=λp InGaAs (λc=2.55 μm), λ=λp InGaAs (λc=1.7 μm), VR=10 mV InGaAs (λc=2.55 μm), VR=10 mV InGaAs (λc=1.7 μm), -3 dB VR=0 V, RL=50 Ω InGaAs (λc=2.55 μm), -3 dB VR=0 V, RL=50 Ω InGaAs (λc=1.7 μm), VR=0 V, f=1 MHz InGaAs (λc=2.55 μm), VR=0 V, f=1 MHz InGaAs (λc=1.7 μm), VR=10 mV InGaAs (λc=2.55 μm), VR=10 mV InGaAs (λc=1.7 μm), λ=λp InGaAs (λc=2.55 μm), λ=λp Min. 0.85 0.7 - Typ. 0.9 to 1.7 1.7 to 2.55 1.55 2.1 0.95 1.0 1 0.7 Max. 10 3.5 1 2 - 2 6 - 1 2.8 1 × 1012 2 × 1010 1.5 0.5 10 14 5 × 1012 7 × 1010 2.5 1 - Unit μm μm A/W nA μA MHz www.hamamatsu.com nF MΩ kΩ cm∙Hz1/2/W 1 Two-color detector K12729-010K Spectral response Spectral transmittance of window material (Typ. Ta=25 °C) 1.2 (Typ. Ta=25 °C) 100 98 96 Transmittance (%) Photosensitivity (A/W) 1.0 0.8 InGaAs (λc=2.55 μm) 0.6 0.4 InGaAs (λc=1.7 μm) 94 92 90 88 86 84 0.2 82 0 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 80 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 Wavelength (μm) Wavelength (μm) KIRDB0479EB KIRDB0606EA Dark current vs. reverse voltage (Typ. VR=0 V, Ta=15 to 65 °C) 2.0 (Typ. Ta=25 °C) 1 mA 1.5 100 μA InGaAs (λc=1.7 μm) 1.0 10 μA 0.5 Dark current Temperature coefficient of sensitivity (%/°C) Temperature characteristics of sensitivity 0 -0.5 InGaAs (λc=2.55 μm) InGaAs (λc=2.55 μm) 1 μA 100 nA InGaAs (λc=1.7 μm) 10 nA -1.0 1 nA -1.5 -2.0 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 100 pA 0.01 0.1 1 10 Reverse voltage (V) Wavelength (μm) KIRDB0495EB KIRDB0603EA 2 Two-color detector K12729-010K Terminal capacitance vs. reverse voltage Shunt resistance vs. element temperature (Typ. Ta=25 °C, f=1 MHz) 10 nF (Typ. VR=10 mV) 10 GΩ 1 GΩ InGaAs (λc=1.7 μm) 100 MΩ 1 nF Shunt resistance Terminal capacitance InGaAs (λc=1.7 μm) 100 pF 10 MΩ 1 MΩ 100 kΩ 10 kΩ InGaAs (λc=2.55 μm) InGaAs (λc=2.55 μm) 1 kΩ 100 Ω 10 pF 0.001 0.01 0.1 1 10 10 Ω -20 0 20 40 60 80 Element temperature (°C) Reverse voltage (V) KIRDB0604EA KIRDB0605EA Dimensional outline (unit: mm) 6.6 2.5 ± 0.2 3.3 2.5 2.4 Photosensitive area InGaAs (λc=1.7 μm) Window 0.9 1.6 8.0 2.4 ± 0.1 7.0 Photosensitive area InGaAs (λ=2.5 μm) (0.07) ± 0.15 8.0 0.8 Index mark Recommended land mark pattern (unit: mm) 0.5 2.0 ± 0.2 3.3 2.5 KIRDC0121EA Cathode (InGaAs, λc=1.7 μm) Anode (InGaAs, λc=1.7 μm) Cathode (InGaAs, λc=2.55 μm) 2.5 ± 0.2 0.5 ± 0.1 2.0 ± 0.2 2.4 ± 0.3 0.7 ± 0.1 3.7 ± 0.2 2.0 ± 0.2 2.0 ± 0.2 1.4 ± 0.2 8.0 2.5 Anode (InGaAs, λc=2.55 μm) (0.15) Center position accuracy of photosensitive area -0.3≤X≤+0.3 -0.3≤Y≤+0.3 KIRDA0244EA 3 Two-color detector K12729-010K Measured example of temperature profile with our hot-air reflow oven for product testing 300 260 °C max Temperature (°C) 250 200 150 100 50 0 0 50 100 150 200 250 300 350 400 450 500 550 Time (s) KIRDC0122EA ∙ After unpacking, store the device in an environment at a temperature range of 5 to 30 °C and a humidity of 60% or less, and perform reflow soldering within 4 weeks. ∙ The thermal stress applied to the device during reflow soldering varies depending on the circuit board and the reflow oven that is used. ∙ When setting the reflow conditions, verify that the reliability of the device is not compromised by the reflow soldering process. 4 Two-color detector K12729-010K Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Metal, ceramic, plastic packages Technical information ∙ Infrared detector / Technical information Information described in this material is current as of August, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KIRD1129E01 Aug. 2014 DN 5