isc Product Specification INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRF4905 FEATURES ·Advanced Process Technology ·Ultra Low On-Resistance ·Dynamic dv/dt Rating ·175°C Operating Temperature ·Fast Switching ·P-Channel ·Fully Avalanche Rated DESCRIPTION ·This benefit, combined with the fast switching speed and ruggedized device . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous VALUE UNIT -55 V ±20 V ID Drain Current-Continuous -74 A IDM Drain Current-Single Pluse -260 A PD Total Dissipation @TC=25℃ 200 W TJ Max. Operating Junction Temperature -55~175 ℃ Storage Temperature -55~175 ℃ MAX UNIT 0.75 ℃/W 62 ℃/W Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRF4905 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS PARAMETER CONDITIONS MIN Drain-Source Breakdown Voltage VGS= 0; ID= -0.25mA -55 VGS(th) Gate Threshold Voltage VDS= VGS; ID=-0.25mA -2 RDS(on) Drain-Source On-Resistance IGSS MAX UNIT V -4 V VGS= -10V; ID= -38A 0.02 Ω Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= -55V; VGS= 0 VDS=- 44V; VGS= 0; Tj= 125℃ -25 -250 μA VSD Forward On-Voltage IS= -38A; VGS= 0 -1.6 V · isc website：www.iscsemi.cn PDF pdfFactory Pro 2 isc & iscsemi is registered trademark www.fineprint.cn