HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6712 Issued Date : 1993.01.13 Revised Date : 2002.05.07 Page No. : 1/4 HTIP122 NPN EPITAXIAL PLANAR TRANSISTOR Description The HTIP122 is designed for use in general purpose amplifier and lowspeed switching applications. Absolute Maximum Ratings (Ta=25°C) TO-220 • Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................................ +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C)................................................................................................. 65 W Total Power Dissipation (Ta=25°C)................................................................................................... 2 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage ................................................................................................. 100 V BVCEO Collector to Emitter Voltage .............................................................................................. 100 V BVEBO Emitter to Base Voltage ....................................................................................................... 5 V IC Collector Current (Continuous)...................................................................................................... 5 A IC Collector Current (Peak)................................................................................................................ 8 A Characteristics (Ta=25°C) Symbol BVCBO *BVCEO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(on) *hFE1 *hFE2 Cob Min. 100 100 1 1 - Typ. - Max. 200 500 2 2 4 2.5 200 Unit V V uA uA mA V V V K K pF Test Conditions IC=1mA, IE=0 IC=100mA VCB=100V VCE=50V VEB=5V IC=3A, IB=12mA IC=5A, IB=20mA IC=3A, VCE=3V IC=0.5A, VCE=3V IC=3A, VCE=3V VCB=10V, f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Darlington Schematic C B R1 R2 E HTIP122 HSMC Product Specification HI-SINCERITY Spec. No. : HE6712 Issued Date : 1993.01.13 Revised Date : 2002.05.07 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collector Current 10000 100000 VCE(sat) @ IC=250IB hFE @ VCE=3V Saturation Voltage (mV) hFE 10000 o 75 C 1000 o 125 C o 25 C 100 10 100 1000 o 25 C o 125 C o 75 C 100 100 10 1 1000 10000 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collcetor Current Saturation Voltage & Colltctor Current 10000 10000 Saturation Voltage (mV) Saturation Voltage (mV) VCE(sat) @ IC=2000IB o 75 C o 25 C 1000 o 125 C o 75 C 1000 o 25 C o 125 C VCE(sat) @ IC=500IB 100 1000 100 100 10000 Collector Current-IC (mA) 1000 10000 Collector Current-IC (mA) ON Voltage & Collcetor Current Capacitance & Reverse-Biased Voltage 1000 10000 VBE(ON) @ VCE=3V Capacitance (pF) ON Voltage (mV) o 75 C o 25 C 1000 o 125 C 100 Cob 100 100 10 1000 Collector Current-IC (mA) HTIP122 10000 0.1 1 10 100 Reverse-Biased Voltage (V) HSMC Product Specification HI-SINCERITY Spec. No. : HE6712 Issued Date : 1993.01.13 Revised Date : 2002.05.07 Page No. : 3/4 MICROELECTRONICS CORP. Switching Time & Collector Current Safe Operating Area 100000 10 PT=1ms VCC=30V, IC=250IB1 =-250IB2 PT=100ms Collector Current (mA) Switching Times (us)... 10000 Tstg 1 Tf Ton PT=1s 1000 100 10 1 0.1 1 10 Collector Current (A) HTIP122 1 10 100 Collector-Emitter Forward Voltage (V) HSMC Product Specification HI-SINCERITY Spec. No. : HE6712 Issued Date : 1993.01.13 Revised Date : 2002.05.07 Page No. : 4/4 MICROELECTRONICS CORP. TO-220AB Dimension Marking: B A D E H 122 C T IP Control Code Date Code H K M I Style: Pin 1.Base 2.Collector 3.Emitter 3 G N 2 1 4 P O 3-Lead TO-220AB Plastic Package HSMC Package Code: E *: Typical Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 DIM A B C D E G H Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HTIP122 HSMC Product Specification