^s-mi-donaaatoi £Ptoducts., One. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 MJ10012 MJH10012 NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high-voltage, high-current Darlington transistors designed for automotive ignition, switching regulator and motor control applications. • • • Collector-Emitter Sustaining Voltage — VcEO(sus) = 400 Vdc (Min) 175 Watts Capability at 50 Volts Automotive Functional Tests 10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS BASE EMITTER MAXIMUM RATINGS Rating MJ10012 Symbol MJH10012 Unit Collector-Emitter Voltage VCEO 400 Vdc Collector-Emitter Voltage (RBE = 27H) VCER 550 Vdc Collector-Base Voltage VCBO VEBO ic 600 Vdc 8.0 Vdc 10 15 Adc IB PD 2.0 Adc Emitter-Base Voltage Collector Current — Continuous — Peak(1) Base Current Total Power Dissipation @ TC = 25°C @Tc = 100°C Derate above 25°C Operating and Storage Junction Temperature Range Tj, Tstg 175 100 1.0 118 47.5 1.05 Watts Watts W/°C -65to+200 -55 to +150 "C (TO-3) MJ10012 THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case R0JC 1.0 0.95 °C/W TL 275 275 "C Maximum Lead Temperature for Soldering Purposes: 1/8" from Case for 5 Seconds Unit Max TO-218TYPE MJH10012 (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors MJ10012MJH10012 ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) Symbol Win Typ Max Unit Collector-Emitter Sustaining Voltage (Figure 1 ) (IC = 200 mAdc, IB = 0, Vc|amp = Rated VCEO) vCEO(sus) 400 — — Vdc Collector-Emitter Sustaining Voltage (Figure 1 ) (IC = 200 mAdc, RBE = 27 Ohms, Vc|amp = Rated VCER) vCER(sus) 425 — — Vdc Characteristic OFF CHARACTERISTICS (1) Collector Cutoff Current (Rated VCER, RBE = 27 Ohms) !CER — — 1.0 mAdc Collector Cutoff Current (Rated VCBO, 'E ~ °) !CBO — — 1.0 mAdc Emitter Cutoff Current (VEB = 6.0 Vdc, Ic = 0) 'EBO — — 40 mAdc 300 100 20 550 350 150 — — — — — — — — — — 2.5 3.0 ON CHARACTERISTICS (1) DC Current Gain (IC = 3.0 Adc, VCE = 6 0 Vdc) (IC = 6.0 Adc, VCE = 6.0 Vdc) (IC = 10 Adc, VCE = 6.0 Vdc) — hFE Collector-Emitter Saturation Voltage (IC = 3.0Adc, IB = 0.6 Adc) (IC = 6.0 Adc, IB = 0.6 Adc) 2000 — Vdc VCE(sat) Oc = 10 Adc, IB = 2.0 Adc) 15 2.0 2.5 Base Emitter Saturation Voltage (IC = 6.0 Adc, IB = 0.6 Adc) (IC = 10 Adc, IB = 2.0 Adc) VBE(sat) Base Emitter On Voltage (Ic = 10 Adc, VCE = 6 ° vdc) vBE(on) — — 2.8 Vdc Vf — 2.0 3.5 Vdc 165 350 PF Diode Forward Voltage (Ip = 10 Adc) Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) Cob SWITCHING CHARACTERISTICS Storage Time (Vcc = 12 Vdc, lc = 6.0Adc, IB1 = IB2 = 0.3 Adc) Figure 2 Fall Time ts — 75 15 US tf — 5.2 15 MS FUNCTIONAL TESTS Second Breakdown Collector Current with Base-Forward Biased Pulsed Energy Test (See Figure 12) See Figure 10 !S/B lC2L/2 — — — 180 (1) Pulse Test: Pulse Width = 300 us, Duty Cycle = 2%. VCC=14V ADJUST UNTIL \Q = 6 A * Adjust t-| such that Ic reaches 200 mA at VCE = vclamp Figure 1. Sustaining Voltage Test Circuit Figure 2. Switching Times Test Circuit mj