PD - 95822A IRF6609 HEXFET® Power MOSFET Low Conduction Losses l Low Switching Losses l Ideal Synchronous Rectifier MOSFET l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l VDSS RDS(on) max Qg 20V 2.0mΩ@VGS = 10V 2.6mΩ@VGS = 4.5V 46nC DirectFET ISOMETRIC MT Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT Description The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6609 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6609 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 20 V VGS ±20 ID @ TC = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V 150 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 31 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current 25 250 Power Dissipation 2.8 IDM c PD @TA = 70°C g Power Dissipation g PD @TC = 25°C Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range RθJA Junction-to-Ambient PD @TA = 25°C A W 1.8 89 W/°C °C 0.022 -40 to + 150 Thermal Resistance Parameter RθJC fj Junction-to-Ambient gj Junction-to-Ambient hj Junction-to-Case ij RθJ-PCB Junction-to-PCB Mounted RθJA RθJA Typ. Max. ––– 45 12.5 ––– 20 ––– ––– 1.4 1.0 ––– Units °C/W Notes through are on page 10 www.irf.com 1 11/10/04 IRF6609 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 20 ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance V Conditions ––– ––– VGS = 0V, ID = 250µA ––– 15 ––– ––– 1.6 2.0 mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 31A ––– 2.0 2.6 VGS = 4.5V, ID = 25A VGS(th) Gate Threshold Voltage 1.55 ––– 2.45 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -6.1 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Forward Transconductance 91 ––– ––– Total Gate Charge ––– 46 69 Qgs1 Pre-Vth Gate-to-Source Charge ––– 15 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 4.7 ––– Qgd Gate-to-Drain Charge ––– 15 ––– ID = 17A Qgodr ––– 11 ––– See Fig. 17 Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– 20 ––– IGSS gfs Qg Qoss Output Charge ––– 26 ––– td(on) Turn-On Delay Time ––– 24 ––– tr Rise Time ––– 95 ––– td(off) Turn-Off Delay Time ––– 26 ––– tf Fall Time ––– 9.8 ––– Ciss Input Capacitance ––– 6290 ––– Coss Output Capacitance ––– 1850 ––– Crss Reverse Transfer Capacitance ––– 860 ––– e e VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 150°C nA VGS = 20V VGS = -20V S VDS = 10V, ID = 25A nC VGS = 4.5V VDS = 10V nC VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5V e ID = 25A ns Clamped Inductive Load VGS = 0V pF VDS = 10V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. ––– Max. 230 Units mJ ––– 25 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 31 ISM (Body Diode) Pulsed Source Current ––– ––– 250 showing the integral reverse VSD (Body Diode) Diode Forward Voltage ––– 0.80 1.2 V p-n junction diode. TJ = 25°C, IS = 25A, VGS = 0V trr Reverse Recovery Time ––– 32 48 ns Qrr Reverse Recovery Charge ––– 26 39 nC 2 c MOSFET symbol A D G S e TJ = 25°C, IF = 25A di/dt = 100A/µs e www.irf.com IRF6609 1000 1000 100 BOTTOM 10 1 2.7V ≤ 60µs PULSE WIDTH Tj = 25°C TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V 2.7V 100 BOTTOM 10 2.7V ≤ 60µs PULSE WIDTH Tj = 150°C 0.1 1 0.1 1 10 100 0.1 1 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 1.5 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000.0 ID, Drain-to-Source Current (Α) VGS 10V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V 2.7V 100.0 T J = 150°C 10.0 T J = 25°C 1.0 VDS = 10V ≤ 60µs PULSE WIDTH 0.1 2.0 3.0 4.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 5.0 ID = 31A VGS = 10V 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRF6609 100000 12 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 17A C, Capacitance (pF) C oss = C ds + C gd 10000 Ciss Coss 1000 Crss 8 6 4 2 0 100 1 10 0 100 1000.0 ID, Drain-to-Source Current (A) 1000 100.0 T J = 150°C 10.0 1.0 40 60 80 T J = 25°C 100 100µsec 10 1 Tc = 25°C Tj = 150°C Single Pulse 1msec 10msec 0.1 0.1 0.4 0.8 1.2 120 OPERATION IN THIS AREA LIMITED BY R DS(on) VGS = 0V 0.0 100 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage ISD, Reverse Drain Current (A) 20 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 1.6 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS= 20V VDS= 10V 10 2.0 0 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF6609 2.5 VGS(th) Gate threshold Voltage (V) 150 ID , Drain Current (A) 120 90 60 30 2.0 ID = 250µA 1.5 1.0 0 25 50 75 100 125 -75 150 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) T J , Junction Temperature (°C) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 Thermal Response ( Z thJA ) 10 1 0.1 τJ 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R1 R1 τJ τ1 R2 R2 τ2 τ1 R3 R3 R4 R4 τC τ τ3 τ2 τ3 τ4 τ4 Ci= τi/Ri Ci i/Ri Ri (°C/W) τi (sec) 0.6784 0.00086 17.299 0.57756 17.566 8.94 9.4701 106 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 10 1000 ID = 31A EAS, Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance ( mΩ) IRF6609 8 6 4 T J = 125°C 2 T J = 25°C 0 2.0 4.0 6.0 8.0 10.0 VGS, Gate-to-Source Voltage (V) ID 11A 14A BOTTOM 25A TOP 800 600 400 200 0 25 50 75 100 125 150 Starting T J, Junction Temperature (°C) Fig 12. On-Resistance Vs. Gate Voltage Fig 13c. Maximum Avalanche Energy Vs. Drain Current 15V LD VDS L VDS DRIVER + VDD - D.U.T RG IAS VGS 20V tp + V - DD D.U.T A VGS 0.01Ω Pulse Width < 1µs Duty Factor < 0.1% Fig 13a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 14a. Switching Time Test Circuit VDS 90% 10% VGS I AS Fig 13b. Unclamped Inductive Waveforms 6 td(on) tr td(off) tf Fig 14b. Switching Time Waveforms www.irf.com IRF6609 D.U.T Driver Gate Drive P.W. + - - - D.U.T. ISD Waveform Reverse Recovery Current RG P.W. Period * + • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + Period V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Current Regulator Same Type as D.U.T. Vds Vgs 50KΩ 12V .2µF .3µF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Current Sampling Resistors Fig 16. Gate Charge Test Circuit www.irf.com Qgs1 Qgs2 Qgd Qgodr Fig 17. Gate Charge Waveform 7 IRF6609 DirectFET Outline Dimension, MT Outline (Medium Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS NOTE: CONTROLLING DIMENSIONS ARE IN MM 8 METRIC MAX CODE MIN 6.35 A 6.25 5.05 B 4.80 3.95 C 3.85 0.45 D 0.35 0.82 E 0.78 0.92 F 0.88 1.82 G 1.78 H 0.98 1.02 0.67 J 0.63 K O.88 1.01 2.63 L 2.46 0.70 M 0.59 0.08 N 0.03 0.14 P 0.11 IMPERIAL MIN MAX 0.246 0.250 0.189 0.199 0.152 0.156 0.014 0.018 0.031 0.032 0.035 0.036 0.070 0.072 0.039 0.040 0.025 0.026 0.035 0.039 0.097 0.104 0.023 0.028 0.001 0.003 0.004 0.006 www.irf.com IRF6609 DirectFET Substrate and PCB Layout, MT Outline (Medium Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. 6 3 1 1- Drain 2- Drain 3- Source 4- Source 5- Gate 6- Drain 7- Drain 5 7 4 2 DirectFET Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6618). For 1000 parts on 7" reel, order IRF6618TR1 REEL DIMENSIONS TR1 OPTION (QTY 1000) STANDARD OPTION (QTY 4800) METRIC METRIC IMPERIAL IMPERIAL MIN CODE MIN MAX MAX MIN MIN MAX MAX 12.992 A 6.9 N.C 177.77 N.C N.C 330.0 N.C 0.795 0.75 B N.C 19.06 N.C 20.2 N.C N.C 0.504 C 0.53 0.50 13.5 0.520 12.8 12.8 13.2 0.059 D 0.059 N.C 1.5 N.C 1.5 N.C N.C E 3.937 2.31 58.72 100.0 N.C N.C N.C N.C F N.C N.C 0.53 N.C 0.724 N.C 13.50 18.4 0.488 G 0.47 11.9 12.4 N.C 0.567 12.01 14.4 H 0.469 0.47 11.9 11.9 N.C 0.606 12.01 15.4 www.irf.com 9 IRF6609 DirectFET Part Marking Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 25A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Surface mounted on 1 in. square Cu board. Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. TC measured with thermal couple mounted to top (Drain) of part. Rθ is measured at TJ of approximately 90°C. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/04 10 www.irf.com