APTM100H45SCT Full bridge Series & SiC parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS CR3A CR3B Q3 G3 G1 OUT1 OUT2 S1 CR2A Q2 S3 CR4A CR2B CR4B Q4 G2 G4 S2 S4 0/VBUS NTC1 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration NTC2 G3 G4 S3 S4 VBUS Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated 0/VBUS OUT2 OUT1 S1 S2 NTC2 G1 G2 NTC1 • • Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage T c = 25°C T c = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy T c = 25°C Max ratings 1000 18 14 72 ±30 450 357 18 50 2500 Unit V A V mΩ W A June, 2004 CR1B Q1 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–7 APTM100H45SCT – Rev 1 CR1A VDSS = 1000V RDSon = 450mΩ max @ Tj = 25°C ID = 18A @ Tc = 25°C APTM100H45SCT All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V, ID = 250µA Min 1000 VGS = 0V,VDS= 1000V Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 9A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz 3 Min VGS = 10V VBus = 500V ID = 18A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy X Eon Turn-on Switching Energy Eoff Turn-off Switching Energy X Typ 4350 715 120 154 Max Unit V 100 500 450 5 ±100 mΩ V nA Max Unit µA pF nC 26 97 10 Inductive switching @ 125°C VGS = 15V VBus = 667V ID = 18A R G = 5Ω Rise Time Typ 12 ns 121 35 Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 18A, R G = 5Ω 383 µJ 380 Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 18A, R G = 5Ω 627 µJ 451 X In accordance with JEDEC standard JESD24-1. Test Conditions IRRM Maximum Reverse Leakage Current VR=1200V IF(A V) Maximum Average Forward Current 50% duty cycle Tj = 25°C Tj = 150°C Tc = 125°C Tj = 25°C Tj = 175°C Min 1200 100 200 Typ 400 2000 10 1.6 2.6 VF Diode Forward Voltage IF = 10A QC Total Capacitive Charge IF = 10A, VR = 600V di/dt =800A/µs 28 Q Total Capacitance f = 1MHz, VR = 200V 90 f = 1MHz, VR = 400V 66 APT website – http://www.advancedpower.com Max Unit V µA A 1.8 3.0 June, 2004 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage V nC pF 2–7 APTM100H45SCT – Rev 1 Parallel SiC diode ratings and characteristics APTM100H45SCT Series diode ratings and characteristics Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/µs IF = 30A VR = 133V di/dt = 200A/µs Min Tj = 125°C Typ 30 1.1 1.4 0.9 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 33 Tj = 125°C 150 Tc = 85°C Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ Transistor Series diode Junction to Case Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K Min R 25 1 1 exp B25 / 85 − T25 T Unit A 1.15 V ns nC Max 0.35 1.2 1.5 Unit °C/W V 150 125 100 4.7 160 M5 Temperature sensor NTC RT = 2500 -40 -40 -40 Max Typ 68 4080 Max °C N.m g Unit kΩ K T: Thermistor temperature RT : Thermistor value at T APT website – http://www.advancedpower.com 3–7 APTM100H45SCT – Rev 1 June, 2004 Package outline APTM100H45SCT Typical MOSFET Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.4 0.35 0.9 0.3 0.7 0.25 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 80 7V VGS =15&8V 40 6.5V 30 6V 20 5.5V 10 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 70 60 50 40 30 TJ =25°C 20 10 5V 0 5 10 15 20 25 30 0 Normalized to VGS=10V @ 9A VGS=10V 1.2 1.1 VGS=20V 1 0.9 0.8 0 10 20 30 ID, Drain Current (A) 2 3 4 5 6 7 8 9 10 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS , Drain to Source Voltage (V) 1.4 TJ=-55°C 40 50 20 18 16 14 12 10 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com June, 2004 0 TJ=125°C 0 4–7 APTM100H45SCT – Rev 1 50 ID, Drain Current (A) I D, Drain Current (A) 60 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=9A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 100 1.2 1.0 0.9 0.8 0.7 100µs limited by RDSon 1ms 10 Single pulse TJ=150°C 10ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage 10000 Ciss 1000 Coss Crss 100 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 ID=18A TJ=25°C 12 10 VDS=200V V DS =500V VDS=800V 8 6 4 2 0 0 40 80 120 160 200 Gate Charge (nC) June, 2004 0 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) APT website – http://www.advancedpower.com 5–7 APTM100H45SCT – Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100H45SCT APTM100H45SCT Delay Times vs Current Rise and Fall times vs Current 60 160 t d(off) V DS =667V RG =5Ω T J=125°C L=100µH 50 120 100 tr and tf (ns) VDS=667V RG=5Ω TJ=125°C L=100µH 80 60 40 30 tr 20 40 td(on) 20 10 0 0 5 10 15 20 25 30 35 40 5 10 I D, Drain Current (A) 35 40 2.5 V DS =667V RG =5Ω T J=125°C L=100µH 1 Eon Eoff 0.5 V DS =667V ID=18A T J=125°C L=100µH 2 Switching Energy (mJ) Switching Energy (mJ) 15 20 25 30 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 1.5 1.5 Eoff 1 Eon 0.5 0 0 5 10 15 20 25 30 35 40 0 5 I D, Drain Current (A) 10 15 20 25 30 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 I DR, Reverse Drain Current (A) 300 VDS=667V D=50% RG=5Ω T J=125°C 250 200 150 100 50 0 6 8 10 12 14 16 ID, Drain Current (A) 18 100 TJ =150°C TJ =25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) June, 2004 Frequency (kHz) tf APT website – http://www.advancedpower.com 6–7 APTM100H45SCT – Rev 1 td(on) and td(off) (ns) 140 APTM100H45SCT Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.6 0.9 1.4 1.2 0.7 1 0.8 0.5 0.6 0.3 0.4 0.1 0.2 0 0.00001 Single Pulse 0.05 0.0001 0.001 0.01 0.1 1 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 20 400 15 TJ=75°C 10 T J=125°C 5 TJ=175°C 0 0 0.5 1 1.5 2 2.5 3 3.5 IR Reverse Current (µA) I F Forward Current (A) TJ=25°C 300 200 T J=75°C T J=125°C 100 T J=175°C 0 400 600 VF Forward Voltage (V) T J=25°C 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage 800 C, Capacitance (pF) 700 600 500 400 300 200 100 0 1000 June, 2004 10 100 VR Reverse Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 7–7 APTM100H45SCT – Rev 1 1