Microsemi APTC90DAM60CT1G Boost chopper super junction mosfet power module Datasheet

APTC90DAM60CT1G
Boost chopper
Super Junction MOSFET
Power Module
5
6
11
CR1
VDSS = 900V
RDSon = 60mΩ max @ Tj = 25°C
ID = 59A @ Tc = 25°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
•
3
4
Q2
-
NTC
9
10
•
1
2
-
12
•
•
•
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Ultra low RDSon
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
CR1 SiC Schottky Diode
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
900
59
44
150
±20
60
462
8.8
2.9
1940
Unit
V
A
July, 2009
ID
Parameter
Drain - Source Breakdown Voltage
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
APTC90DAM60CT1G – Rev 1
Symbol
VDSS
APTC90DAM60CT1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 900V
VGS = 0V,VDS = 900V
Min
Typ
2.5
1000
50
3
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 52A
VGS = VDS, ID = 6mA
VGS = ±20 V, VDS = 0V
Max
200
Unit
60
3.5
200
mΩ
V
nA
Max
Unit
µA
Dynamic Characteristics
Symbol Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V ; VDS = 100V
f = 1MHz
Min
Typ
13.6
0.66
nF
540
VGS = 10V
VBus = 400V
ID = 52A
nC
64
230
70
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 52A
RG = 3.8Ω
20
ns
400
25
1.8
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 52A ; RG = 3.8Ω
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 52A ; RG = 3.8Ω
mJ
1.5
2.52
mJ
1.7
CR1 SiC diode ratings and characteristics
Maximum Reverse Leakage Current
VR=1200V
Min
1200
Tj = 25°C
Tj = 175°C
Tc = 100°C
Tj = 25°C
Tj = 175°C
Typ
Max
96
168
30
1.6
2.3
600
3000
IF
DC Forward Current
VF
Diode Forward Voltage
IF = 30A
QC
Total Capacitive Charge
IF = 30A, VR = 600V
di/dt =1000A/µs
120
C
Total Capacitance
f = 1MHz, VR = 200V
288
f = 1MHz, VR = 400V
207
www.microsemi.com
Unit
V
µA
A
1.8
3
V
nC
July, 2009
IRM
Test Conditions
pF
2–6
APTC90DAM60CT1G – Rev 1
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTC90DAM60CT1G
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
CoolMOS
SiC Diode
To heatsink
M4
4000
-40
-40
-40
2.5
Max
0.27
0.63
Unit
°C/W
V
150
125
100
4.7
80
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R25
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
exp ⎢ B25 / 85 ⎜⎜
− ⎟⎟⎥
T
T
⎝ 25
⎠⎦
⎣
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3–6
APTC90DAM60CT1G – Rev 1
July, 2009
SP1 Package outline (dimensions in mm)
APTC90DAM60CT1G
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.3
0.9
0.25
0.7
0.2
0.15
0.5
0.1
0.3
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
6V
160
5V
80
0
0
5
10
15
VDS, Drain to Source Voltage (V)
20
Maximum Safe Operating Area
10 ms
ID, DC Drain Current (A)
925
900
25
75
100
125
50
40
30
20
10
1
0
1
10
100
1000
25
VDS, Drain to Source Voltage (V)
Ciss
10000
Coss
1000
100
Crss
10
1
0
50
75
100
125
TC, Case Temperature (°C)
150
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
C, Capacitance (pF)
50
10
25 50 75 100 125 150 175 200
VDS, Drain to Source Voltage (V)
www.microsemi.com
VDS=400V
ID=52A
TJ=25°C
8
July, 2009
ID, Drain Current (A)
100 µs
Single pulse
TJ=150°C
TC=25°C
950
DC Drain Current vs Case Temperature
60
limited by RDSon
10
975
TJ, Junction Temperature (°C)
1000
100
1000
6
4
2
0
0
100
200 300 400
Gate Charge (nC)
500
600
4–6
APTC90DAM60CT1G – Rev 1
ID, Drain Current (A)
VGS=20, 8V
BVDSS, Drain to Source Breakdown
Voltage
Breakdown Voltage vs Temperature
240
APTC90DAM60CT1G
VDS=600V
D=50%
RG=3.8Ω
TJ=125°C
TC=75°C
300
Hard
switching
200
ZCS
100
0
20
25
30
35
40
45
50
3.0
2.5
2.0
1.5
1.0
0.5
25
3
Eon
2
100
125
150
6
Switching Energy (mJ)
Eoff
1
0
Eoff
5
4
Eon
3
VDS=600V
ID=52A
TJ=125°C
L=100µH
2
1
0
10
20
30
40
50
60
ID, Drain Current (A)
70
80
0
5
10
15
20
Gate Resistance (Ohms)
July, 2009
Eon and Eoff (mJ)
VDS=600V
RG=3.8Ω
TJ=125°C
L=100µH
75
Switching Energy vs Gate Resistance
Switching Energy vs Current
4
50
TJ, Junction Temperature (°C)
ID, Drain Current (A)
www.microsemi.com
5–6
APTC90DAM60CT1G – Rev 1
Frequency (kHz)
ZVS
ON resistance vs Temperature
RDS(on), Drain to Source ON resistance
(Normalized)
Operating Frequency vs Drain Current
400
APTC90DAM60CT1G
Typical CR1 SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.7
0.6
0.9
0.5
0.7
0.4
0.5
0.3
0.3
0.2
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
60
300
TJ=75°C
40
30
TJ=125°C
20
TJ=175°C
10
IR Reverse Current (µA)
IF Forward Current (A)
TJ=25°C
50
0
0
0.5
1
1.5
2
2.5
3
3.5
225
150
TJ=75°C
TJ=125°C
75
TJ=175°C
0
400
600
800
TJ=25°C
1000 1200 1400 1600
VR Reverse Voltage (V)
VF Forward Voltage (V)
Capacitance vs.Reverse Voltage
C, Capacitance (pF)
2100
1800
1500
1200
900
600
300
0
1000
July, 2009
10
100
VR Reverse Voltage
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
6–6
APTC90DAM60CT1G – Rev 1
1
Similar pages