UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High Total Power Dissipation. (450mW) * Excellent hFE Linearity. * Complementary to UTC MMBT9015 ORDERING INFORMATION Ordering Number Lead Free Halogen Free MMBT9014G-x-AE3-R MMBT9014G-x-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-022,E MMBT9014 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 100 mA Collector dissipation PC 225 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Emitter Voltage Collector-Base Voltage Emitter Base Voltage Collector cutoff current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-emitter on voltage Current-Gain-Bandwidth Product Output Capacitance Noise Figure SYMBOL VCEO VCBO VEBO ICBO IEBO hFE VCE(SAT) VBE(SAT) VBE(ON) fT COB NF TEST CONDITIONS IC=100μA, IE=0 IC=1mA, IB=0 IE=100μA, IC=0 VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V,Ic=1mA IC=100mA, IB=5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCB=10V, IE=0, f=1MHz VCE=5V,IC=0.2mA,f=1KHz,RS=2KΩ MIN 50 45 5 60 0.58 150 TYP 280 0.14 0.84 0.63 270 2.2 0.9 MAX 50 100 1000 0.3 1.0 0.7 3.5 10 UNIT V V V nA nA V V V MHz pF dB CLASSIFICATION OF hFE RANK RANGE A 60-150 B 100-300 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw C 200-600 D 400-1000 2 of 3 QW-R206-022,E MMBT9014 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Static Characteristic Dc Current Gain 1000 100 IB=160μA IB=140μA IB=120μA IB=100μA IB=80μA 70 60 50 500 Dc Current Gain, hFE Collector Current, IC(mA) 90 80 IB=60μA 40 IB=40μA 30 IB=20μA 20 VCE=5V 100 50 10 0 0 10 20 40 30 10 50 1 Base-Emitter Saturation Voltage Collecter Saturation Voltage 1000 VCE(SAT) 500 100 VBE(SAT) 50 IC=20IB 10 1 10 100 1000 100 Collector Current, IC(mA) 1000 Collector Current, IC(mA) Current Gain-Bandwidth Product Current Gain-Bandwidth Product, fT (MHz) Saturation Voltage, VBE(SAT) VCE(SAT) (mV) Collect-Emitter Voltage, VCE(V) 10 1000 500 VCE=5V 100 50 10 1 10 100 1000 Collector Current, IC(mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-022,E