S
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APT10050JN 1000V 20.5A 0.50Ω
S
ISOTOP®
"UL Recognized" File No. E145592 (S)
POWER MOS IV
®
SINGLE DIE ISOTOP® PACKAGE
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT
10050JN
UNIT
1000
Volts
Drain-Source Voltage
20.5
Continuous Drain Current @ TC = 25°C
1
Amps
IDM, lLM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
Volts
Total Power Dissipation @ TC = 25°C
520
Watts
Linear Derating Factor
4.16
W/°C
PD
TJ,TSTG
TL
82
and Inductive Current Clamped
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
VGS(TH)
Characteristic / Test Conditions / Part Number
APT10050JN
Drain-Source Breakdown Voltage
(VGS = 0V, I D = 250 µA)
On State Drain Current
MIN
TYP
MAX
1000
Volts
2
APT10050JN
20.5
Amps
(VDS > I D(ON) x R DS(ON) Max, VGS = 10V)
Drain-Source On-State Resistance
UNIT
2
0.50
APT10050JN
Ohms
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
MAX
UNIT
Gate Threshold Voltage
(VDS = VGS, I D = 2.5mA)
2
THERMAL CHARACTERISTICS
Characteristic
MIN
RΘJC
Junction to Case
RΘCS
Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
TYP
0.24
0.06
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-0037 Rev F
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT10050JN
Characteristic
Test Conditions
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
5425
6500
Coss
Output Capacitance
VDS = 25V
710
995
Crss
Reverse Transfer Capacitance
f = 1 MHz
230
350
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
VGS = 10V
235
370
VDD = 0.5 VDSS
24
36
ID = ID [Cont.] @ 25°C
107
160
VGS = 15V
15
30
3
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
VDD = 0.5 VDSS
15
30
ID = ID [Cont.] @ 25°C
47
75
RG = 0.6Ω
15
30
TYP
MAX
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
Continuous Source Current
(Body Diode)
IS
MIN
APT10050JN
20.5
APT10050JN
82
ISM
Pulsed Source Current
(Body Diode)
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/µs)
Q rr
Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/µs)
(VGS = 0V, IS = -ID [Cont.])
1.8
UNIT
Amps
Volts
1280
2000
ns
16
32
µC
TYP
MAX
UNIT
PACKAGE CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
LD
Internal Drain Inductance (Measured From Drain Terminal to Center of Die.)
3
LS
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
5
VIsolation
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
CIsolation
Drain-to-Mounting Base Capacitance (f = 1MHz)
Torque
Maximum Torque for Device Mounting Screws and Electrical Terminations.
nH
2500
Volts
35
pF
13
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
D=0.5
0.1
0.05
0.2
0.1
0.05
0.01
0.005
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-0037 Rev F
0.3
0.02
0.01
t2
SINGLE PULSE
0.001
10-5
t1
10-4
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
in-lbs
APT10050JN
50
50
40
30
5V
20
10
4V
ID, DRAIN CURRENT (AMPERES)
VGS=7, 8, 9, 10V
40
6V
30
20
10
0
30
20
10
TJ = +125°C
TJ = +25°C
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
ID, DRAIN CURRENT (AMPERES)
25
20
15
10
5
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
TJ = +125°C
40
3.0
TJ = 25°C
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
V
2.5
GS
2.0
D
VGS=10V
1.5
VGS=20V
1.0
0.5
0.0
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
TJ = +25°C
0
5
10
15
20
25
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.2
1.1
1.0
0.9
0.8
0.7
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
-50
1.4
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
4V
0
0
100
200
300
400
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
50
5V
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-0037 Rev F
ID, DRAIN CURRENT (AMPERES)
VGS=6, 7, 8, 9, 10V
APT10050JN
OPERATION HERE
LIMITED BY RDS (ON)
10
1mS
5
10mS
100mS
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
.5
DC
.1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
5 10
50 100
500 1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
I = I [Cont.]
D
D
VDS=100V
16
10,000
100µS
VDS=200V
12
VDS=500V
8
4
0
100
200
300
400
500
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
Ciss
C, CAPACITANCE (pF)
50
0
20,000
10µS
5,000
Coss
1,000
Crss
500
100
.1
.5
1
5
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
100
200
160
120
80
40
TJ =+150°C
TJ =+25°C
TJ =-55°C
0
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
1.95 (.077)
2.14 (.084)
* Source
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
050-0037 Rev F
* Source
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
Drain
Gate