LS133 SILICON EPITAXIAL PLANAR DIODE High speed switching diode LS-34 Features • Glass sealed envelope • High speed • High reliability QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 90 V DC Reverse Voltage VR 80 V Mean Rectifying Current Io 130 mA Peak Forward Current IFM 400 mA Surge Current (1s) Isurge 600 mA Power Dissipation Ptot 300 mW Junction Temperature Tj 175 O Storage Temperature Range Ts - 65 to + 175 O Symbol Max. Unit Forward Voltage at IF = 100 mA VF 1.2 V Reverse Current at VR = 80 V IR 0.5 µA Capacitance Between Terminals at VR = 0.5 V, f = 1 MHz CT 2 pF Reverse Recovery Time at VR = 6 V, IF = 10 mA, RL = 50 Ω trr 4 ns C C Characteristics at Ta = 25 OC Parameter SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated :12/01/2007