ASX415 250 ~ 4000 MHz MMIC Amplifier 4 Features Description 14 dB Gain at 2000 MHz The ASX415, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems up to 4 GHz. The amplifier is available in a SOT89 package and passes through the stringent DC, RF, and reliability tests. 27 dBm P1dB at 2000 MHz 42 dBm OIP3 at 2000 MHz ACLR @ WCDMA 4FA: -51 dBc @ Pout = +13 dBm, +/- 5 MHz offset MTTF > 100 Years Single Supply ASX415 Package Style: SOT89 Typical Performance (Supply Voltage = Device Voltage, TA = +25 C, Z0 = 50 ) Parameters Units Typical Frequency MHz 900 2000 2000 2000 2600 Gain dB 20.0 14.5 14.3 14.0 11.5 IF (433 ~ 444 MHz) S11 dB -14 -7 -7 -7 -7 CDMA S22 dB -13 -11 -11 -11 -10 Output IP31) dBm 42.5 46.0 42.0 40.0 37.0 Noise Figure dB 4.2 5.6 4.6 4.1 4.2 Output P1dB dBm 29.0 29.0 27.0 26.5 29.0 Current mA 155 185 155 123 155 Device Voltage V +5.00 +5.30 +5.00 +4.75 +5.00 Application Circuit Satellite Phone WCDMA WiMAX LTE (2300 ~ 2700 MHz) 1) OIP3 is measured with two tones at an output power of +8 dBm/tone @ +5.30 V, +6 dBm/tone @ +5.00 V, +4 dBm/tone @ +4.75 V separated by 1 MHz. Product Specifications Parameters Units Testing Frequency MHz Min Gain dB S11 dB S22 dB Output IP3 dBm Noise Figure dB Output P1dB dBm 26.5 Current mA 140 Device Voltage V Typ Max 2000 13.5 14.3 -9 -11 40 42 4.6 27.0 155 170 +5 Pin Configuration Absolute Maximum Ratings Parameters Rating Operating Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Operating Junction Temperature +150 C Input RF Power (Continuous)* Thermal Resistance Pin No. Function 1 RF IN +22 dBm 2 GND 24 C/W 3 RF OUT / Bias * Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf 1/18 ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX415 250 ~ 4000 MHz MMIC Amplifier Outline Drawing Part No. Lot No. Symbols A L b b1 C D D1 E E1 e1 H S e ASX415 Pxxxx Dimensions (In mm) MIN NOM 1.40 1.50 0.89 1.04 0.36 0.42 0.41 0.47 0.38 0.40 4.40 4.50 1.40 1.60 3.64 --2.40 2.50 2.90 3.00 0.35 0.40 0.65 0.75 1.40 1.50 Pin No. Function 1 RF IN 2 GND 3 RF OUT / Bias MAX 1.60 1.20 0.48 0.53 0.43 4.60 1.75 4.25 2.60 3.10 0.45 0.85 1.60 Mounting Recommendation (In mm) Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 500 V ~ 1000 V MM Class A Voltage Level: <200 V CAUTION: ESD-sensitive device! Moisture Sensitivity Level (MSL) Level 3 at 260 C reflow 2/18 ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX415 250 ~ 4000 MHz MMIC Amplifier APPLICATION CIRCUIT IF 433 ~ 444 MHz +5 V Frequency (MHz) 433 444 Magnitude S21 (dB) 22.0 22.0 Magnitude S11 (dB) -18 -18 Magnitude S22 (dB) -16 -15 Output P1dB (dBm) 28 28 Output IP31) (dBm) 35 37 Noise Figure (dB) 6.5 6.0 Device Voltage (V) +5 +5 Current (mA) 155 155 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vs=5 V D1=5.6V Zener Diode C5=1 F C4=100pF L1=82 nH (Coil Inductor) C1=100 pF RF IN C2=100 pF RF OUT ASX415 L2=12 nH L3=8.2 nH L4=8.2 nH C3=12 pF S-parameters & K-factor 0 25 -5 20 S11 (dB) Gain (dB) -10 15 10 -15 -20 5 0 300 -25 350 400 450 500 550 -30 300 600 350 400 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 -20 -25 300 500 550 600 3 2 1 350 400 450 500 550 600 0 0 500 Frequency (MHz) 3/18 450 Frequency (MHz) Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX415 250 ~ 4000 MHz MMIC Amplifier Frequency (MHz) 824 ~ 849 Magnitude S21 (dB) 20.3 20.0 19.8 Magnitude S11 (dB) -15 -15 -14 Magnitude S22 (dB) -12 -12 -12 CDMA Rx Output P1dB (dBm) 28.5 28.5 28.0 824 ~ 849 MHz Output IP31) (dBm) 45 41 35 Noise Figure (dB) 5.2 4.4 4.2 Device Voltage (V) +5.30 +5.00 +4.75 Current (mA) 185 155 123 APPLICATION CIRCUIT +5.30 V, +5.00 V, +4.75 V 1) OIP3 is measured with two tones at an output power of +7 dBm/tone @ +5.30 V, +6 dBm/tone @ +5.00 V, +4 dBm/tone @ +4.75 V separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C6=1 F C5=100pF L1=68 nH (Coil Inductor) C1=100 pF RF IN C2=100 pF RF OUT ASX415 L3=3.3 nH L2=8.2 nH C3=7.5 pF C4=4.7 pF S-parameters & K-factor 25 0 -5 20 o -40 c o 25 c -10 o 85 c S11 (dB) Gain (dB) 15 10 -15 o -40 c -20 o 25 c o 85 c 5 0 600 -25 700 800 900 1000 1100 1200 -30 600 700 800 Frequency (MHz) 900 1000 1100 1200 Frequency (MHz) 0 5 -5 4 o -40 c o 25 c o S22 (dB) Stability Factor 85 c -10 -15 -20 -25 600 3 2 1 700 800 900 1000 1100 1200 0 0 500 Frequency (MHz) 4/18 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX415 250 ~ 4000 MHz MMIC Amplifier Gain vs. Temperature 200 26 180 24 160 22 Gain (dB) Current (mA) Current vs. Temperature 140 120 20 18 Frequency = 835 MHz Frequency = 835 MHz 100 16 80 -60 -40 -20 0 20 40 60 80 14 -60 100 -40 -20 o 20 40 60 80 100 Temperature ( C) Noise Figure vs. Temperature P1dB vs. Temperature 8 36 MHz) 7 34 6 32 5 30 P1dB (dBm) Noise Figure (dB) 0 o Temperature ( C) 4 3 2 28 26 24 Frequency = 835 MHz Frequency = 835 MHz 1 22 0 -60 -40 -20 0 20 40 60 80 100 20 -60 -40 o -20 0 20 40 60 80 100 o Temperature ( C) Temperature ( C) Output IP3 vs. Tone Power (Frequency = 835 MHz) MHz) 70 60 Output IP3 (dBm) 50 40 30 o -40 c 20 o 25 c o 85 c 10 0 4 5 6 7 8 9 10 11 12 13 14 P out per Tone (dBm) 5/18 ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX415 250 ~ 4000 MHz MMIC Amplifier Frequency (MHz) 869 ~ 894 Magnitude S21 (dB) 20.1 20.0 19.7 Magnitude S11 (dB) -14 -14 -12 Magnitude S22 (dB) -13 -13 -13 CDMA Tx Output P1dB (dBm) 29.0 29.0 27.5 869 ~ 894 MHz Output IP31) (dBm) 45.0 42.5 39.0 Noise Figure (dB) 5.2 4.2 4.2 Device Voltage (V) +5.30 +5.00 +4.75 Current (mA) 185 155 123 APPLICATION CIRCUIT +5.30 V, +5.00 V, +4.75 V 1) OIP3 is measured with two tones at an output power of +5 dBm/tone @ +5.30 V, +6 dBm/tone @ +5.00 V, +10 dBm/tone @ +4.75 V separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C6=1 F C5=100pF L1=68 nH (Coil Inductor) C1=100 pF RF IN C2=100 pF RF OUT ASX415 L3=3.3 nH L2=6.8 nH C3=8 pF C4=4.7 pF S-parameters & K-factor 25 0 20 15 S11 (dB) Gain (dB) -5 10 -10 -15 5 0 600 700 800 900 1000 1100 1200 -20 600 700 800 Frequency (MHz) 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 -20 -25 600 1000 1100 1200 3 2 1 700 800 900 1000 1100 1200 0 0 500 Frequency (MHz) 6/18 900 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX415 250 ~ 4000 MHz MMIC Amplifier APPLICATION CIRCUIT Satellite Phone 1626 ~ 1661 MHz +5 V Frequency (MHz) 1626 ~ 1661 Magnitude S21 (dB) 16.5 Magnitude S11 (dB) -14 Magnitude S22 (dB) -18 Output P1dB (dBm) 29 Output IP31) (dBm) 37.5 Noise Figure (dB) 3.8 Device Voltage (V) +5 Current (mA) 155 1) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C6=1 F C5=100pF L1=68 nH (Coil Inductor) C1=100 pF RF IN C2=100 pF RF OUT ASX415 L3=1.5 nH L2=2.2 nH C3=3 pF C4=1.5 pF 20 0 15 -5 S11 (dB) Gain (dB) S-parameters & K-factor 10 5 0 1300 -10 -15 1400 1500 1600 1700 1800 1900 -20 1300 1400 1500 Frequency (MHz) 1600 1700 1800 1900 Frequency (MHz) 0 5 -5 4 Stability Factor S22 (dB) -10 -15 -20 2 1 -25 -30 1300 3 1400 1500 1600 1700 1800 1900 0 0 500 Frequency (MHz) 7/18 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX415 250 ~ 4000 MHz MMIC Amplifier Frequency (MHz) 1920 ~ 1980 Magnitude S21 (dB) 14.5 14.3 14.0 Magnitude S11 (dB) -7 -7 -7 Magnitude S22 (dB) -11 -11 -11 WCDMA Rx Output P1dB (dBm) 29.0 27.0 26.5 1920 ~ 1980 MHz Output IP31) (dBm) 46 42 40 Noise Figure (dB) 5.6 4.6 4.1 Device Voltage (V) +5.30 +5.00 +4.75 Current (mA) 185 155 123 APPLICATION CIRCUIT +5.30 V, +5.00 V, +4.75 V 1) OIP3 is measured with two tones at an output power of +8 dBm/tone @ +5.30 V, +6 dBm/tone @ +5.00 V, +4 dBm/tone @ +4.75 V separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc D1=5.6V Zener Diode C6=1 F C5=100pF L1=18 nH C1=68 pF RF IN C2=68 pF RF OUT ASX415 C3=2.7 pF 1.5 mm 1.5 mm C4=1.8 pF S-parameters & K-factor (+5 V) 20 0 -5 15 S11 (dB) Gain (dB) -10 10 o -40 c o 25 c o 85 c 5 0 1700 1800 1900 2000 2100 -15 o -40 c o 25 c o 85 c -20 2200 -25 1700 1800 1900 Frequency (MHz) 0 5 -5 4 o -40 c o 25 c o 85 c -20 -25 1700 2100 2200 3 2 1 1800 1900 2000 Frequency (MHz) 8/18 Stability Factor S22 (dB) -10 -15 2000 Frequency (MHz) 2100 2200 0 0 500 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX415 250 ~ 4000 MHz MMIC Amplifier Gain vs. Temperature 200 20 180 18 160 16 Gain (dB) Current (mA) Current vs. Temperature 140 120 14 12 Frequency = 1950 MHz Frequency = 1950 MHz 100 10 80 -60 -40 -20 0 20 40 60 80 8 -60 100 -40 -20 o 0 20 40 60 80 100 o Temperature ( C) Temperature ( C) Output IP3 vs. Tone Power (Frequency = 1950 MHz) P1dB vs. Temperature 70 36 60 32 Output IP3 (dBm) P1dB (dBm) 50 28 24 Frequency = 1950 MHz 40 30 o -40 c o 25 c o 85 c 20 20 10 16 -60 -40 -20 0 20 40 60 80 100 0 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Pout per Tone (dBm) o Temperature ( C) Output IP3 vs. Tone Power (Frequency = 1950 MHz) 60 55 Output IP3 (dBm) 50 45 40 35 30 5V 4.75 V 25 20 15 0 2 4 6 8 10 12 14 16 18 20 22 Pout per Tone (dBm) 9/18 ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX415 250 ~ 4000 MHz MMIC Amplifier WCDMA ACLR – 4FA +5 V, 155 mA +4.75 V, 123 mA -35 -40 ACLR (dBc) -45 -50 5V 4.75 V -55 -60 10 11 12 13 14 15 16 17 Output Channel Power (dBm) Test Source: WCDMA 4FA (3GPP 3.4 12-00), Test Model1 w/64 DPCH, PAR = 13 dB @ 0.01 % probability on CCDF, 1950 MHz, 5 MHz offset CDMA ACPR – 1FA -35 -35 -40 -40 -45 -45 -50 -50 ACPR (dBc) ACLR (dBc) WCDMA ACLR – 1FA -55 -60 -65 -60 -65 5V 4.75 V -70 -55 5V 4.75 V -70 -75 -75 11 12 13 14 15 16 17 18 19 20 21 22 23 11 12 13 Test Source: WCDMA 1FA (3GPP 3.4 12-00), Test Model1 w/64 DPCH, PAR = 13 dB @ 0.01 % probability on CCDF, 1950 MHz, 5 MHz offset 10/18 14 15 16 17 18 19 20 21 22 23 Output Channel Power (dBm) Output Channel Power (dBm) Test Source: IS-95, 9ch. Forward 30 kHz Meas BW, 1950 MHz, 750 kHz offset ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX415 250 ~ 4000 MHz MMIC Amplifier LTE ACLR – 10 MHz & 20 MHz -40 ACLR (dBc) -45 -50 -55 20 MHz BW -60 10 MHz BW -65 -70 0 4 8 12 Output Power (dBm) 16 20 1) Test Source : LTE_FDD_test model 3.1, BW: 10 MHz & 20 MHz, Test Frequency: 1850 MHz LTE ACLR – 20 MHz 2) Test Source : LTE_FDD_test model 3.1, BW: 20 MHz, Test Frequency: 1850 MHz 11/18 ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX415 250 ~ 4000 MHz MMIC Amplifier APPLICATION CIRCUIT WCDMA Tx 2110 ~ 2170 MHz +5.30 V, +5.00 V, +4.75 V Frequency (MHz) 2110 ~ 2170 Magnitude S21 (dB) 13.2 13.0 12.8 Magnitude S11 (dB) -6 -6 -6 Magnitude S22 (dB) -12 -12 -12 Output P1dB (dBm) 28.5 27.5 27.0 Output IP31) (dBm) 46.0 40.5 39.5 Noise Figure (dB) 6.0 4.9 4.5 Device Voltage (V) +5.30 +5.00 +4.75 Current (mA) 185 155 123 1) OIP3 is measured with two tones at an output power of +8 dBm/tone @ +5.30 V, +6 dBm/tone @ +5.00 V, +4 dBm/tone @ +4.75 V separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc D1=5.6V Zener Diode C6=1 F C5=100pF L1=15 nH (Coil Inductor) C1=68 pF RF IN C2=68 pF RF OUT ASX415 C3=2.2 pF 1 mm 0.5 mm C4=1.5 pF 20 0 15 -5 S11 (dB) Gain (dB) S-parameters & K-factor (+5 V) 10 5 0 1900 -10 -15 2000 2100 2200 2300 2400 -20 1900 2000 2100 Frequency (MHz) 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 -20 -25 1900 2300 2400 3 2 1 2000 2100 2200 2300 2400 0 0 500 Frequency (MHz) 12/18 2200 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX415 250 ~ 4000 MHz MMIC Amplifier Output IP3 vs. Tone Power (Frequency = 2140 MHz) 60 55 Output IP3 (dBm) 50 45 40 35 30 5V 4.75 V 25 20 15 0 2 4 6 8 10 12 14 16 18 20 22 Pout per Tone (dBm) WCDMA ACLR +5 V, 155 mA +4.75 V, 123 mA Test Source: WCDMA 4FA (3GPP 3.4 12-00), Test Model1 w/64 DPCH, PAR = 13 dB @ 0.01 % probability on CCDF 13/18 ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX415 250 ~ 4000 MHz MMIC Amplifier Frequency (MHz) 2500 ~ 2700 2500 ~ 2700 Magnitude S21 (dB) 11.5 11.5 Magnitude S11 (dB) -7 -7 Magnitude S22 (dB) -10 -10 WiMAX Output P1dB (dBm) 29.0 28.5 2500 ~ 2700 MHz Output IP31) (dBm) 37 36 Noise Figure (dB) 4.2 3.9 Device Voltage (V) +5.00 +4.75 Current (mA) 155 123 APPLICATION CIRCUIT +5.00 V, +4.75 V 1) OIP3 is measured with two tones at an output power of +6 dBm/tone @ +5 V, +4 dBm/tone @ +4.75 V separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V / 4.75 V D1=5.6V Zener Diode C6=1 F C5=100pF L1=15 nH (Coil Inductor) C1=68 pF RF IN C2=68 pF RF OUT ASX415 1.5 mm C3=2 pF C4=1.5 pF 20 0 15 -5 S11 (dB) Gain (dB) S-parameters & K-factor 10 5 0 2000 -10 -15 2200 2400 2600 2800 3000 3200 -20 2000 2200 2400 Frequency (MHz) 0 2800 3000 3200 5 4 Stability Factor -5 S22 (dB) 2600 Frequency (MHz) -10 3 2 -15 1 -20 2000 2200 2400 2600 2800 3000 3200 0 0 500 Frequency (MHz) 14/18 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX415 250 ~ 4000 MHz MMIC Amplifier WCDMA ACLR +5 V, 155 mA +4.75 V, 123 mA Test Source: WCDMA 4FA (3GPP 3.4 12-00), Test Model1 w/64 DPCH, PAR = 13 dB @ 0.01 % probability on CCDF 15/18 ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX415 250 ~ 4000 MHz MMIC Amplifier Frequency (MHz) 3500 3500 Magnitude S21 (dB) 9.0 9.0 Magnitude S11 (dB) -7 -7 Magnitude S22 (dB) -11 -11 WiMAX Output P1dB (dBm) 25.0 24.5 3500 MHz Output IP31) (dBm) 42 40 Noise Figure (dB) 5.4 4.8 Device Voltage (V) +5.00 +4.75 Current (mA) 155 123 APPLICATION CIRCUIT +5.00 V, +4.75 V 1) OIP3 is measured with two tones at an output power of +14 dBm/tone @ +5 V, +13 dBm/tone @ +4.75 V separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V / 4.75 V D1=5.6V Zener Diode C6=1 F C5=100pF L1=15 nH (Coil Inductor) C1=68 pF RF IN C2=68 pF RF OUT ASX415 C3=1 pF C4=0.75 pF S-parameters & K-factor 12 0 10 -5 -10 S11 (dB) Gain (dB) 8 6 -15 4 -20 2 0 3000 3200 3400 3600 3800 4000 4200 -25 3000 3200 3400 Frequency (MHz) 0 3800 4000 4200 5 4 Stability Factor -5 S22 (dB) 3600 Frequency (MHz) -10 3 2 -15 1 -20 3000 3200 3400 3600 3800 4000 4200 0 0 500 Frequency (MHz) 16/18 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX415 250 ~ 4000 MHz MMIC Amplifier Frequency (MHz) 2300 2500 2700 Magnitude S21 (dB) 12.9 13.1 12.8 Magnitude S11 (dB) -5 -8 -18 LTE Magnitude S22 (dB) -18 -18 -18 2300 ~ 2700 MHz Output P1dB (dBm) 27.5 Output IP31) (dBm) 36 Noise Figure (dB) 5.1 Device Voltage (V) +5 Current (mA) 155 APPLICATION CIRCUIT Gain Flatness < 0.5 dB +5 V 1) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vs = 5V D1=5.6V Zener Diode C6=1 F C5=100pF L1=15 nH (Coil Inductor) C1=68 pF RF IN C2=68 pF RF OUT ASX415 3.5 mm 3.5 mm C3=1.8 pF C4=1.2 pF S-parameters & K-factor 0 20 -5 -10 S11 (dB) Gain (dB) 15 10 -15 -20 5 -25 0 2000 2200 2400 2600 2800 -30 2000 3000 2200 2400 Frequency (MHz) 2600 2800 3000 Frequency (MHz) 5 0 -5 4 Stability Factor S22 (dB) -10 -15 -20 2 1 -25 -30 2000 3 2200 2400 2600 2800 3000 0 0 500 17/18 1000 1500 2000 2500 3000 3500 Frequency (MHz) Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX415 250 ~ 4000 MHz MMIC Amplifier Recommended Soldering Reflow Profile 260 C Ramp-up (3 C/sec) 20~40 sec Ramp-down (6 C/sec) 200 C 150 C 60~180 sec Copyright 2009-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 18/18 ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017