HTSEMI BZT52C3V0W Silicon planar zener diode Datasheet

BZT52C…W
SILICON PLANAR ZENER DIODES
PINNING
Features
• Ideally suited for automated assembly processes
• Total power dissipation: max. 500 mW
PIN
DESCRIPTION
1
Cathode
2
Anode
2
1
Top View
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Power Dissipation
Ptot
500
mW
Junction Temperature
TJ
150
O
TStg
- 65 to + 150
O
Symbol
Max.
RthA
340
VF
0.9
Storage Temperature Range
C
C
Characteristics at Ta = 25 OC
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at IF = 10 mA
Unit
C/W
O
V
１
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
BZT52C…W
Characteristics at Ta = 25 OC
Zener Voltage Range 1)
Type
Marking
Code
Vznom
V
lZT
for
Dynamic Impedance
Reverse Leakage Current
VZT
ZZT
ZZK
at IZK
IR
at VR
mA
V
Ω (Max.)
Ω (Max.)
mA
μA (Max.)
V
BZT52C2V4W
BZT52C2V7W
BZT52C3V0W
BZT52C3V3W
BZT52C3V6W
BZT52C3V9W
BZT52C4V3W
BZT52C4V7W
BZT52C5V1W
BZT52C5V6W
BZT52C6V2W
BZT52C6V8W
BZT52C7V5W
BZT52C8V2W
BZT52C9V1W
BZT52C10W
BZT52C11W
BZT52C12W
BZT52C13W
BZT52C15W
BZT52C16W
BZT52C18W
BZT52C20W
BZT52C22W
BZT52C24W
BZT52C27W
BZT52C30W
BZT52C33W
BZT52C36W
MH
MJ
MK
MM
MN
MP
MR
MX
MY
MZ
NA
NB
NC
ND
NE
NF
NH
NJ
NK
NM
NN
NP
NR
NX
NY
NZ
PA
PB
PC
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2.2...2.6
2.5...2.9
2.8...3.2
3.1...3.5
3.4...3.8
3.7...4.1
4...4.6
4.4...5
4.8...5.4
5.2...6
5.8...6.6
6.4...7.2
7...7.9
7.7...8.7
8.5...9.6
9.4...10.6
10.4...11.6
11.4...12.7
12.4...14.1
13.8...15.6
15.3...17.1
16.8...19.1
18.8...21.2
20.8...23.3
22.8...25.6
25.1...28.9
28...32
31...35
34...38
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14
15.4
16.8
18.9
21
23.1
25.2
BZT52C39W
PD
39
2
37...41
130
350
0.5
0.1
27.3
1)
VZ is tested with pulses (20 ms).
２
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
BZT52C…W
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123
c
A
∠ ALL ROUND
HE
A
bp
E
D
UNIT
A
bp
c
D
E
HE
v
∠
mm
1.15
1.05
0.6
0.5
0.135
0.100
2.7
2.6
1.65
1.55
3.9
3.7
0.2
5
O
３
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５