DMN2028USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ADVANCE INFORMATION ID max V(BR)DSS RDS(on) max TA = +25°C (Note 6) 20V 20mΩ @ VGS= 4.5V 9.8A 28mΩ @ VGS= 2.5V 8.3A Low On-Resistance Low Input Capacitance Fast Switching Speed Low Output Leakage ESD Protected Up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Battery charging Power management functions DC-DC converters Portable power adaptors Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate) D S D S D S D G D SO-8 G ESD PROTECTED TO 2kV Top View Top View Gate Protection Diode S Equivalent Circuit Ordering Information (Note 4) Product DMN2028USS-13 Notes: Marking N2028US Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 N2028US N2028US YY WW YY WW 1 4 Chengdu A/T Site DMN2028USS Document number: DS32075 Rev. 4 - 2 = Manufacturer’s Marking N2028US = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) 1 4 Shanghai A/T Site 1 of 7 www.diodes.com October 2013 © Diodes Incorporated DMN2028USS Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 4.5V Pulsed Drain current VGS = 4.5V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 6) TA = +70°C (Note 6) (Note 5) (Note 7) (Note 6) (Note 7) ID IDM IS ISM Value 20 12 9.8 7.9 7.3 45.0 6.0 45.0 Unit Value 1.56 12.5 2.81 22.5 80.0 44.5 37.0 -55 to +150 Unit V A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 8) PD RJA RJL TJ, TSTG W mW/°C °C/W °C 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as note (5), except the device is measured at t 10 sec. 7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300µs. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). DMN2028USS Document number: DS32075 Rev. 4 - 2 2 of 7 www.diodes.com October 2013 © Diodes Incorporated DMN2028USS 10 RDS(on) Limited Max Power Dissipation (W) ID Drain Current (A) 1.6 1 DC 1s 100m 100ms 10m 10ms Single Pulse T amb=25°C 1m 100m 1ms 100µs 1 10 VDS Drain-Source Voltage (V) 1.4 25mm x 25mm 1oz FR4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 Safe Operating Area 80 70 25mm x 25mm 1oz FR4 60 T amb=25°C 50 D=0.5 40 30 20 Single Pulse D=0.2 D=0.05 10 0 100µ D=0.1 1m 10m 100m 1 Pulse Width (s) 10 100 Document number: DS32075 Rev. 4 - 2 60 80 100 120 140 160 Temperature (°C) 1k Single Pulse T amb=25°C 100 10 1 100µ Transient Thermal Impedance DMN2028USS 40 Derating Curve Maximum Power (W) Thermal Resistance (°C/W) ADVANCE INFORMATION Thermal Characteristics 3 of 7 www.diodes.com 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation October 2013 © Diodes Incorporated DMN2028USS Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1.0 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.6 RDS (ON) - Forward Transfer Admittance (Note 9 & 10) Diode Forward Voltage (Note 9) DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 11) Total Gate Charge (Note 11) Gate-Source Charge (Note 11) Gate-Drain Charge (Note 11) Turn-On Delay Time (Note 11) Turn-On Rise Time (Note 11) Turn-Off Delay Time (Note 11) Turn-Off Fall Time (Note 11) |Yfs| VSD - 1.3 20 28 1.3 V Static Drain-Source On-Resistance (Note 9) 1.0 11 15 16 0.7 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 9.4A VGS = 2.5V, ID = 8.3A VDS = 5V, ID = 9.4A VGS = 0V, IS = 1.3A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 1000 166 158 1.51 7.0 11.6 2.7 3.4 11.67 12.49 35.89 12.33 - mΩ S V pF Ω nC ns Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 2.5V VDS = 10V ID = 9.4A VGS = 4.5V VGS = 4.5V, VDS = 10V, RG = 6Ω , ID = 1A 9. Measured under pulsed conditions. Pulse width 300μs; duty cycle 2% 10. For design aid only, not subject to production testing. 11. Switching characteristics are independent of operating junction temperatures. 30 20 VGS = 10V VGS = 4.5V 25 VGS = 4.0V ID, DRAIN CURRENT (A) Notes: ID, DRAIN CURRENT (A) ADVANCE INFORMATION Electrical Characteristics (@TA = +25°C, unless otherwise specified.) VGS = 3.5V 20 VGS = 3.0V VGS = 2.5V 15 VGS = 2.0V 10 5 0 15 10 5 TA = 150°C T A = 125°C VGS = 1.8V 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMN2028USS Document number: DS32075 Rev. 4 - 2 T A = 85°C TA = 25°C 2 4 of 7 www.diodes.com 0 TA = -55°C 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 October 2013 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.030 0.025 0.020 0.015 VGS = 2.5V 0.010 VGS = 4.5V 0.005 0 0 5 10 15 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.030 0.025 T A = 150°C 0.015 TA = 125°C T A = 85°C 0.010 T A = 25°C T A = -55°C 0.005 0 20 0 5 10 15 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.030 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V 0.020 1.6 1.4 1.2 1.0 VGS = 2.5V ID = 5A 0.8 VGS = 4.5V ID = 10A 0.6 -50 0.025 0.020 0.010 0 -50 20 2.5 IS, SOURCE CURRENT (A) 16 2.0 1.5 1.0 ID = 1mA ID = 250µA 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Document number: DS32075 Rev. 4 - 2 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 3.0 DMN2028USS VGS = 4.5V ID = 10A 0.005 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) 0.5 VGS = 2.5V ID = 5A 0.015 Fig. 5 On-Resistance Variation with Temperature VGS(TH), GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMN2028USS 5 of 7 www.diodes.com 12 TA = 25°C 8 4 0 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 October 2013 © Diodes Incorporated DMN2028USS 10,000 10,000 IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) 1,000 Ciss Coss Crss 100 10 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance TA = 150°C 1,000 TA = 125°C 100 T A = 85°C 10 1 20 TA = 25°C 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 20 10 VGS, GATE-SOURCE VOLTAGE (V) VDS = 15V ID = 9.4A 8 6 4 2 0 0 5 10 15 20 25 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics 30 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 0.254 ADVANCE INFORMATION f = 1MHz E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h A2 A A3 7°~9° 45° Detail ‘A’ b e SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm D DMN2028USS Document number: DS32075 Rev. 4 - 2 6 of 7 www.diodes.com October 2013 © Diodes Incorporated DMN2028USS Suggested Pad Layout ADVANCE INFORMATION Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X Dimensions X Y C1 C2 C1 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2013, Diodes Incorporated www.diodes.com DMN2028USS Document number: DS32075 Rev. 4 - 2 7 of 7 www.diodes.com October 2013 © Diodes Incorporated