IKP06N60T p ® TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply ® TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behaviour Low EMI Very soft, fast recovery anti-parallel EmCon HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IKP06N60T VCE IC;Tc=100°C VCE(sat),Tj=25°C 600V 6A 1.5V G E PG-TO-220-3-1 Tj,max Marking Package 175°C K06T60 PG-TO-220-3-1 Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCE DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpul s 18 Turn off safe operating area - 18 600 Unit V A 12 6 VCE ≤ 600V, Tj ≤ 175°C Diode forward current, limited by Tjmax TC = 25°C TC = 100°C IF Diode pulsed current, tp limited by Tjmax IFpul s 18 Gate-emitter voltage VGE ±20 V tSC 5 µs Power dissipation TC = 25°C Ptot 88 W Operating junction temperature Tj -40...+175 °C Storage temperature Tstg -55...+175 2) Short circuit withstand time 12 6 VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s 1 2) 260 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.3 Sep. 07 IKP06N60T p ® TrenchStop Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit K/W Characteristic IGBT thermal resistance, junction – case RthJC 1.7 Diode thermal resistance, junction – case RthJCD 2.6 Thermal resistance, junction – ambient RthJA 62 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 600 - - T j =2 5 °C - 1.5 2.05 T j =1 7 5° C - 1.8 T j =2 5 °C - 1.6 2.05 T j =1 7 5° C - 1.6 - 4.1 4.6 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0. 25m A Collector-emitter saturation voltage VCE(sat) VF Diode forward voltage Gate-emitter threshold voltage VGE(th) V V G E = 15 V , I C = 6 A V G E = 0V , I F = 6 A I C = 0. 18m A , VCE=VGE Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V µA T j =2 5 °C - - 40 T j =1 7 5° C - - 700 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 6 A - 3.6 - S Integrated gate resistor RGint none Ω Dynamic Characteristic V C E = 25 V , - 368 - Coss V G E = 0V , - 28 - Reverse transfer capacitance Crss f= 1 MH z - 11 - Gate charge QGate V C C = 48 0 V, I C =6 A V G E = 15 V - 42 - nC - 7 - nH - 55 - A Input capacitance Ciss Output capacitance LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) IC(SC) V G E = 15 V ,t S C ≤ 5 µs V C C = 4 0 0 V, T j = 25 ° C pF Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev. 2.3 Sep. 07 IKP06N60T p ® TrenchStop Series Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. - 9 - - 6 - - 130 - - 58 - - 0.09 - - 0.11 - - 0.2 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 °C , V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , R G = 23 Ω, 2) L σ =6 0 nH , 2) C σ = 4 0p F Energy losses include “tail” and diode reverse recovery. Diode reverse recovery time trr T j =2 5 °C , - 123 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 6 A, - 190 - nC Diode peak reverse recovery current Irrm d i F / d t =5 5 0 A/ µs - 5.3 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 450 - A/µs ns mJ Anti-Parallel Diode Characteristic Switching Characteristic, Inductive Load, at Tj=175 °C Parameter Symbol Conditions Value min. typ. max. - 9 - - 8 - - 165 - - 84 - - 0.14 - - 0.18 - - 0.335 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =1 7 5° C, V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , R G = 2 3Ω 1) L σ =6 0 nH , 1) C σ = 4 0p F Energy losses include “tail” and diode reverse recovery. Diode reverse recovery time trr T j =1 7 5° C - 180 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 6 A, - 500 - nC Diode peak reverse recovery current Irrm d i F / d t =5 5 0 A/ µs - 7.6 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 285 - A/µs ns mJ Anti-Parallel Diode Characteristic 2) 1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2.3 Sep. 07 IKP06N60T p ® TrenchStop Series tp=1µs 10A 15A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 18A T C =80°C 12A T C =110°C 9A 6A Ic 3A Ic 5µs 10µs 50µs 1A 500µs 5ms DC 0A 100Hz 1kHz 10kH z 0,1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 23Ω) 1000V 15A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 100V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C;VGE=15V) 80W 60W 40W 20W 0W 25°C 10V 50°C 75°C 5A 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) Power Semiconductors 10A 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) Rev. 2.3 Sep. 07 IKP06N60T p ® TrenchStop Series 15A 15A V G E =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT V G E =20V 15V 12A 13V 11V 9A 9V 7V 6A 3A 11V 9A 9V 7V 6A 0A 0V 1V 2V 3V 0V 1 5A 1 2A 9A 6A T J =1 75 °C 3A 25 °C 0V 2V 4V 6V 8V 1 0V 2V 3V IC =12A 2,5V 2,0V IC =6A 1,5V 1,0V IC =3A 0,5V 0,0V -50°C 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 13V 3A 0A 0A 15V 12A 5 Rev. 2.3 Sep. 07 IKP06N60T p ® TrenchStop Series td(off) 100ns tf 100ns t, SWITCHING TIMES t, SWITCHING TIMES t d(off) t d(on) 10ns tf td(on) tr 10ns tr 1ns 0A 3A 6A 9A 12A 1ns 15A 10Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, RG = 23Ω, Dynamic test circuit in Figure E) tf 10ns t d(on) tr 1ns 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 6A, RG = 23Ω, Dynamic test circuit in Figure E) Power Semiconductors 50Ω 70Ω 90Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES 100ns td(off) 30Ω 6V 5V m ax. 4V typ. 3V m in. 2V 1V 0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.18mA) 6 Rev. 2.3 Sep. 07 IKP06N60T p ® TrenchStop Series *) E on and E ts include losses E ts * 0,5 mJ 0,4 mJ 0,3 mJ E off 0,2 mJ E on* 0,1 mJ 0,0 mJ 0A 2A 4A 6A 8A 0,4 mJ 0,3 mJ E on* 0,2 mJ E off 0,1 mJ 0,0 mJ 10A 10Ω IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175°C, VCE=400V, VGE=0/15V, RG=23Ω, Dynamic test circuit in Figure E) 30Ω 55Ω 80Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E) *) E on and E ts include losses *) E on and E ts include losses due to diode recovery 0,5m J E, SWITCHING ENERGY LOSSES 0,4mJ E, SWITCHING ENERGY LOSSES E ts* due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) E on and E ts include losses due to diode recovery 0,6 mJ 0,3mJ E ts * 0,2mJ E off 0,1mJ due to diode recovery E ts * 0,4m J 0,3m J E off 0,2m J E on * 0,1m J E on* 0,0mJ 50°C 100°C 0,0m J 200V 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE = 0/15V, IC = 6A, RG = 23Ω, Dynamic test circuit in Figure E) Power Semiconductors 300V 400V 500V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 6A, RG = 23Ω, Dynamic test circuit in Figure E) 7 Rev. 2.3 Sep. 07 IKP06N60T p ® TrenchStop Series VGE, GATE-EMITTER VOLTAGE 1nF C iss c, CAPACITANCE 15V 120V 10V 48 0V 100pF C oss 5V C rss 10pF 0V 0nC 10 nC 20n C 30nC 40nC 50nC 0V QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 6 A) 10V 20V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 80A 60A 40A 20A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 400V, Tj ≤ 150°C) Power Semiconductors 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C, TJmax<150°C) 8 Rev. 2.3 Sep. 07 IKP06N60T p ® TrenchStop Series ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL RESISTANCE D=0.5 10 K/W D=0.5 0 0.2 R,(K/W) 0.3837 0.4533 0.5877 0.2483 0.1 -1 0.05 10 K/W τ, (s) 5.047*10-2 4.758*10-3 4.965*10-4 4.717*10-5 R1 0.02 0.01 R2 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 single pulse -2 10 K/W 1µs 1ms 0.2 R,(K/W) 0.2520 0.4578 1.054 0.7822 0.1 0.05 R1 τ, (s) 4.849*10-2 1.014*10-2 1.309*10-3 1.343*10-4 R2 -1 10 K/W 0.02 0.01 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 single pulse 10 K/W 1µs 10m s 100m s 10µs 100µs 1ms 10m s 100m s tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T) 250ns 0,5µC Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 10 K/W -2 10µs 100µs tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T) 200ns TJ=175°C 150ns 100ns TJ=25°C 50ns 0ns 200A/µs 0 400A/µs 600A/µs 0,4µC 0,3µC 0,2µC T J=25°C 0,1µC 0,0µC 200A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E) Power Semiconductors T J=175°C 9 400A/µs 600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=400V, IF=6 A, Dynamic test circuit in Figure E) Rev. 2.3 Sep. 07 IKP06N60T p ® TrenchStop Series -500A/µs 8A T J =25°C 6A 4A 2A 0A 200A/µs 400A/µs 600A/µs dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT T J =175°C -300A/µs T J=175°C -200A/µs -100A/µs 400A/µs 600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E) 10A 2,0V I F =12A VF, FORWARD VOLTAGE IF, FORWARD CURRENT -400A/µs 0A/µs 200A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E) 8A 6A 4A T J =175°C 2A 0A T J=25°C 6A 1,5V 3A 1,0V 0,5V 25°C 0,0V 0V 1V 2V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors 10 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Rev. 2.3 Sep. 07 ® TrenchStop Series IKP06N60T p PG-TO-220-3-1 Power Semiconductors 11 Rev. 2.3 Sep. 07 IKP06N60T p ® TrenchStop Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 τn r2 rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =60nH an d Stray capacity C σ =40pF. Figure B. Definition of switching losses Power Semiconductors 12 Rev. 2.3 Sep. 07 ® TrenchStop Series IKP06N60T p Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 9/12/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 13 Rev. 2.3 Sep. 07