MBR1040FCT THRU MBR10200FCT 10A High Power Schottky Barrier Rectifiers ■ Features ■ Outline • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. •Silicon epitaxial planar chip, metal silicon junction. •Suffix "H" indicates Halogen-free part, ex.MBR1040FCTH. Leadfree parts meet environmental standards of MIL-STD-19500 /228 ITO-220AB 0.189(4.80) 0.165(4.20) 0.130(3.30) 0.098(2.50) 0.408(10.36) 0.382(9.70) 0.138(3.50) MAX 0.600(15.5) 0.580(14.5) Marking code 1 2 0.339(8.60) 0.315(8.00) 3 0.055(1.4) 0.039(1.0) 0.067(1.7) 0.039(1.0) ■ Mechanical data 0.114(2.90) 0.098(2.50) 0.171(4.35)MAX 0.512(13.0) MIN 0.035(0.90) 0.012(0.30) • Epoxy : UL94-V0 rated flame retardant. • Case : ITO-220AB molded plastic body over passivated chip . • Lead : Axial leads, solderable per MIL-STD-202, Method 208 guranteed . • Polarity: Color band denotes cathode end . • Mounting Position : Any. • Weight : Approximated 2.25 gram . 0.110(2.80) 0.091(2.30) PIN 1 PIN 3 0.031(0.80)MAX PIN 2 Dimensions in inches and (millimeters) ■ Maximum ratings and electrical characteristics Rating at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Conditions Parameter Symbol Forward rectified current See Fig.1 Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) V R = V RRM T A = 25 OC Reverse current V R = V RRM T A = 125 C Thermal resistance Marking code MAX. UNIT IO 10 A I FSM 125 A f=1MHz and applied 4V DC reverse voltage CJ Junction to ambient R θJA T STG Storage temperature Symbol TYP. 0.1 IR O Diode junction capacitance MIN. Max. repetitive peak reverse voltage V RRM (V) Max. RMS voltage V RMS (V) Max. DC blocking voltage V R (V) 10 150 +175 Max. forward voltage @5A, T A = 25 OC V F (V) Max. forward voltage @5A, T A = 125 OC V F (V) 0.70 0.57 0.79 0.70 MBR1040FCT 40 28 40 MBR1045FCT MBR1045FCT 45 31.5 45 MBR1060FCT MBR1060FCT 60 42 60 MBR1065FCT MBR1065FCT 65 45.5 65 MBR10100FCT MBR10100FCT 100 70 100 0.81 0.71 MBR10150FCT MBR10150FCT 150 105 150 0.87 0.77 MBR10200FCT MBR10200FCT 200 140 200 0.90 0.80 ht t p : // pF O 30 -55 MBR1040FCT Revision:20170701-P1 www.lgesem i .c o m mA C/W O C Operating temperature T J ( OC) -55 ~ +150 -55 ~ +175 mail:[email protected] MBR1040FCT THRU MBR10200FCT 10A High Power Schottky Barrier Rectifiers ■ Rating and characteristic curves Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig.1 - Forward Current Derating Curve 150 Peak Forward Surge Current (A) 12 Average Forward Current (A) RESISTIVE OR INDUCTIVE LOAD 10 8.0 6.0 MBR1040FCT~MBR10100FCT 4.0 MBR10150FCT~MBR10200FCT 2.0 single phase half wave 60Hz resistive or inductive load 125 100 75 50 25 0 0 25 50 75 100 125 150 175 1 10 O Lead Temperature ( C) 100 Number of Cycles at 60 Hz Fig. 3.1 - Instantaneous Forward Characteristics Fig. 3.2 - Instantaneous Forward Characteristics 50 50 MBR1040FCT MBR10100FCT Instantaneous Forward Current (A) Instantaneous Forward Current (A) 10 T J=125 OC 1 MBR1060FCT 0.1 T J=25 OC 10 T J=125 OC 1.0 T J=25 OC 0.5 0.01 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 Fig. 3.3 - Instantaneous Forward Characteristics 0.8 1.0 100 Instantaneous Reverse Current (mA) MBR10150FCT MBR10200FCT Instantaneous Forward Current (A) 0.6 Fig. 4 - Reverse Characteristics 100 10 T J=125 OC T J=25 OC 1 0.4 Instantaneous Forward Voltage (Volts) Instantaneous Forward Voltage (Volts) 10 T J=150 OC 1 T J=125 OC 0.1 0.01 T J=75 OC 0.001 T J=25 OC 0.0001 0 0.2 0.4 0.6 0.8 1.0 0 1.2 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage ( %) Instantaneous Forward Voltage (Volts) PACKAGE SPQ/PCS CARTON SPQ/PCS CARTON SIZE/CM CARTON GW/KG CARTON NW/KG TO-220AB 50/tube;1000/BOX 5000 58X23.5X18 15.00 13.00 ht t p : // Revision:20170701-P1 www.lgesem i .c o m mail:[email protected]