GUNN Diodes Cathode Heat Sink ® TM MG1001 – MG1061 Discrete Frequency: Cathode Heatsink Features ● CW Designs to 500 mW ● Pulsed Designs to 10 W ● Frequency Coverage Specified from 5.9–95 GHz ● Low Phase Noise ● High Reliability Applications ● Motion Detectors ● Transmitters and Receivers ● Beacons ● Automotive Collision Avoidance Radars ● Radars ● Radiometers ● Instrumentation Copyright 2008 Rev: 2009-01-19 Description Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. MDT Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5–110 GHz. Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GUNN Diodes Cathode Heat Sink ® TM MG1001 – MG1061 (Discrete Frequency: Cathode Heatsink) C Band Gunn Diodes (Specifications @ 25°C) Part Number Operating Frequency1 (GHz) MG1001-11 MG1002-11 Operating Current Min. Power2 (mW) Typ. Operating Voltage (V) Min. (mA) Max. (mA) Package Outline3 5.9–8.2 50 12 200 400 M11 5.9–8.2 100 12 300 600 M11 MG1003-15 5.9–8.2 250 12 600 1100 M15 MG1004-15 5.9–8.2 500 12 900 1300 M15 X Band Gunn Diodes (Specifications @ 25°C) Part Number Operating Frequency1 (GHz) MG1005-11 MG1006-11 Operating Current Min. Power2 (mW) Typ. Operating Voltage (V) Min. (mA) Max. (mA) Package Outline3 8.2–12.0 50 10 200 400 M11 8.2–12.0 100 10 400 700 M11 MG1007-15 8.2–12.0 250 10 700 1200 M15 MG1008-15 8.2–12.0 500 10 1000 1600 M15 Ku Band Gunn Diodes (Specifications @ 25°C) Operating Current Part Number Operating Frequency1 (GHz) Min. Power2 (mW) Typ. Operating Voltage (V) Min. (mA) Max. (mA) Package Outline3 MG1009-11 12.4–18.0 50 8 300 500 M11 MG1010-11 12.4–18.0 100 8 400 800 M11 MG1011-15 12.4–18.0 250 8 800 1200 M15 MG1012-15 12.4–18.0 500 8 1100 1700 M15 K Band Gunn Diodes (Specifications @ 25°C) Part Number Operating Frequency1 (GHz) MG1013-16 MG1014-16 Operating Current Min. Power2 (mW) Typ. Operating Voltage (V) Min. (mA) 18.0–26.5 50 6 18.0–26.5 100 6 MG1015-16 18.0–26.5 200 MG1016-17 18.0–23.0 400 Max. (mA) Package Outline3 400 600 M16 500 1000 M16 6 800 1400 M16 6 900 1700 M17 Microsemi Gunn diodes are specified to operate within a narrow range of a customer-designated center frequency within the operating frequency range shown. Additional frequencies are available; Please contact the factory. 2 Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width = 1 µS, duty factor = 1% typ. 3 Polarity: anode is the cap and cathode is the heatsink. 1 Copyright 2008 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 GUNN Diodes Cathode Heat Sink ® TM MG1001 – MG1061 Gunn Diodes (Discrete Frequency: Cathode Heatsink) Ka Band Gunn Diodes (Specifications @ 25°C) Part Number Operating Frequency1 (GHz) MG1017-16 MG1018-16 Operating Current Min. Power2 (mW) Typ. Operating Voltage (V) Min. (mA) 26.5–40.0 50 4.5 26.5–40.0 100 4.5 MG1019-16 26.5–40.0 200 MG1020-16 26.5–40.0 MG1039-16 MG1040-16 Max. (mA) Package Outline3 300 700 M16 600 1100 M16 5.0 800 1400 M16 250 5.5 800 1600 M16 26.5–35.0 300 5.5 1000 1700 M16 26.5–35.0 350 5.5 1000 1800 M16 U Band Gunn Diodes (Specifications @ 25°C) Operating Current Part Number Operating Frequency1 (GHz) Min. Power2 (mW) Typ. Operating Voltage (V) Min. (mA) Max. (mA) Package Outline3 MG1021-16 40.0–60.0 50 4 400 800 M16 MG1022-16 40.0–60.0 100 4 700 1200 M16 MG1023-16 40.0–50.0 150 4 800 1600 M16 V and W Band Gunn Diodes (Specifications @ 25°C) Operating Current Part Number Operating Frequency1 (GHz) Min. Power2 (mW) Typ. Operating Voltage (V) Min. (mA) MG1036-16 60.5–85.0 10 4.5 MG1037-16 60.5–85.0 50 5 MG1024-16 85–95 10 MG1025-16 85–95 20 MG1038-16 85–95 50 Max. (mA) Package Outline3 400 900 M16 500 1100 M16 4.5 450 1100 M16 4.5 500 1000 M16 5 450 1200 M16 High Power Pulsed Gunn Diodes (Specifications @ 25°C) Part Number Operating Frequency1 (GHz) Min. Power2 (mW) Typ. Operating Voltage (V) Typ. Operating Current (Amps.) Package Outline3 MG1034-15 9.3 5 35 8 M15 Stacked Pulsed Gunn Diodes (Specifications @ 25°C) Part Number Operating Frequency1 (GHz) Min. Power2 (Watts) Typ. Operating Voltage (V) Typ. Operating Current (Amps) Number of Stacks Package Outline3 MG1060-15 9.3 10 70 6 2 M15 Microsemi Gunn diodes are specified to operate within a narrow range of a customer-designated center frequency within the operating frequency range shown. Additional frequencies are available; Please contact the factory. 2 Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width = 1 µS, duty factor = 1% typ. 3 Polarity: anode is the cap and cathode is the heatsink. 1 Copyright 2008 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 3 GUNN Diodes Cathode Heat Sink ® TM MG1001 – MG1061 Gunn Diodes (Discrete Frequency: Cathode Heatsink) Typical Characteristics 1.0 300 -50°C Power Output (mW) IBias Ratio IThreshold 0.8 0.6 0.4 0.2 0 0 1 2 VBias VThreshold 250 200 90°C 150 100 0 3 2 4 6 8 10 12 Bias Voltage (V) Ratio Power Output vs. Bias Voltage IBias Ratio vs. VBias Ratio IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change. Consult factory for the latest information. These products are supplied with a RoHS complaint Gold finish . These devices are ESD sensitive and must be handled using ESD precautions. Copyright 2008 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 4