Micrel MIC5162BMM Dual regulator controller for high-speed bus termination Datasheet

MIC5162
Micrel, Inc.
MIC5162
Dual Regulator Controller For High-Speed Bus Termination
General Description
Features
The MIC5162 is a dual regulator controller designed for highspeed bus termination. It offers a simple, low-cost JEDEC
compliant solution for terminating high-speed, low-voltage
digital buses (i.e. DDR, SCSI, GTL, SSTL, HSTL, LV-TTL,
Rambus, LV-PECL, LV-ECL, etc).
The MIC5162 controls two external N-Channel MOSFETs to
form two separate regulators. It operates by switching between either the high-side MOSFET or the low-side MOSFET
depending on whether the current is being sourced to the load
or sinked by the regulator.
Designed to provide a universal solution for bus termination
regardless of input voltage, output voltage, or load current,
the desired MIC5162 output voltage can be programmed by
externally forcing the reference voltage.
The MIC5162 operates from an input of 1.35V to 6V, with a
second bias supply input required for operation. It is available
in the tiny MSOP-10 package with operating junction temperature range of –40°C to +125°C.
• JEDEC Compliant Bus Termination for SCSI, GTL,
SSTL, HSTL, LV-TTL, Rambus, LV-PECL, LV-ECL, etc.
• DDR memory termination
• Tracking programmable output
• Requires minimal external components
• Wide bandwidth
• Input voltage range: 1.35V to 6V
• Logic controlled enable input
• Tiny MSOP-10 package
• Available –40°C < TJ < +125°C
Applications
•
•
•
•
Desktop computers
Notebook computers
Communication systems
Video cards
Ordering Information
Part Number
Standard
Pb-Free
MIC5162BMM
MIC5162YMM
Junction
Temp Range
Package
–40°C to +125°C
10-Pin MSOP
Typical Application
Load Transient
VIN=2.5V to 1.5V
VDDQ = 1.35V
to 6.0V
Sink 3A
VDDQ VREF
VCC
EN
SUD50N02-06
120pF
EN
COMP
220pF
FB
LD
VTT = 1/2 VDDQ
0A
Source 3A
COUT = 330µF
GND
VTT – VREF
(50mV/div)
VCC = 5.0V
HD
SOURCE
(2A/div)
MIC5162BMM
3k
Typical SSTL-2 Application
TIME (200µs/div)
Micrel, Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com
February 2005
1
M9999-092004
MIC5162
Micrel, Inc.
Pin Configuration
VCC 1
10 N/C
EN 2
9 HD
VDDQ 3
8 LD
VREF 4
7 COMP
GND 5
6 FB
10-Lead MSOP
Pin Description
Pin Number
Pin Name
1
VCC
Bias Supply Input. Apply 5V to this input for internal bias to the controller.
2
EN
Enable (Input): CMOS compatible input. Logic high = enable, logic low =
shutdown.
3
VDDQ
Input supply voltage.
4
VREF
Reference output equal to half of VDDQ.
5
GND
Ground.
6
FB
7
Comp
8
LD
Low-side drive: Connects to the Gate of the external low side MOSFET.
9
HD
High-side drive: Connects to the Gate of the external high side MOSFET.
10
N/C
Not internally connected.
M9999-092004
Pin Function
Feedback input to the to the internal error amplifier.
Compensation (Output): Connect a capacitor to feedback pin for compensation of the internal control loop.
2
February 2005
MIC5162
Micrel, Inc.
Absolute Maximum Ratings (Note 1)
Operating Ratings (Note 2)
Supply Voltage (VCC) ...................................................... 7V
Supply Voltage (VDDQ) .................................................... 7V
Enable Input Voltage (VEN) ............................................. 7V
Junction Temperature Range ............ –40°C < TJ < +125°C
Supply Voltage (VCC) ............................................ 3V to 6V
Supply Voltage (VDDQ) ....................................... 1.35V - 6V
Enable Input Voltage (VEN) .................................. 0V to VIN
Electrical Characteristics
TA = 25°C with VDDQ = 2.5V; VCC = 5V; VEN = VCC; bold values indicate –40ºC<TJ<+125ºC; unless otherwise specified. See test
circuit 1 for test circuit configuration.
Parameter
Condition
Min
Typ
Max
Units
–1%
0.5VDDQ
1%
V
Sourcing; 100mA to 3A
–5
–10
0.4
5
–10
mV
Sinking; –100mA to –3A
–5
–10
0.6
5
10
mV
VREF Voltage
VTT Voltage Accuracy (Note 2)
Supply Current (IDDQ)
VEN = 1.2V (controller ON)
No Load
120
140
200
µA
Supply Current (ICC)
No Load
15
20
25
mA
ICC Shutdown Current (Note 3)
VEN = 0.2V (controller OFF)
10
35
µA
Start–up Time (Note 4)
VCC, = 5V external bias; VEN = VIN
8
15
30
µs
Enable Input
Enable Input Threshold
Regulator enable
1.2
V
Regulator shutdown
0.3
Enable Hysteresis
Enable Pin Input Current
V
40
mV
VIL < 0.2V (controller shutdown)
0.01
µA
VIH > 1.2V (controller enabled)
5.5
µA
4.97
V
Drive
High Side Gate Drive Voltage
High Side MOSFET Fully ON
High Side Gate Drive Voltage
High Side MOSFET Fully OFF
Low Side Gate Drive Voltage
Low Side MOSFET Fully ON
Low Side Gate Drive Voltage
Low Side MOSFET Fully OFF
Note 1.
4.8
0.03
4.8
0.2
4.97
0.03
V
V
0.2
V
Exceeding the absolute maximum ratings may damage the device.
Note 2.
The VTT voltage accuracy is measured as a delta voltage from the reference output (VTT – VREF).
Note 3.
Shutdown current is measured only on the VCC pin. The VDDQ pin will always draw a minimum amount of current when voltage is applied.
Start-up time is defined as the amount of time from VEN = VCC to HSD = 90% of VCC.
Note 4.
February 2005
3
M9999-092004
MIC5162
Micrel, Inc.
Test Circuit
VDDQ = 1.8V
or 2.5V
MIC5162BMM
VDDQ
SUD50N02-06
HD
VTT
VCC
VCC = 5.0V
EN
220µF 10µF
EN
COMP VREF
470pF
COUT = 3 × 560µF
LD
FB
120pF
GND
10k
Figure 1. Test Circuit
M9999-092004
4
February 2005
MIC5162
Micrel, Inc.
Typical Characteristics
10
0
-1
-2
-3
-2
-1
0
1
2
OUTPUT CURRENT (A)
1.2625
3
VREF (V)
1.2600 VDDQ = 2.5V
1.2575
1.2550
1.2525
1.2500
1.2475
1.2450
1.2425
1.2400
1.2375
-40 -20 0 20 40 60 80 100 120
TEMPERATURE (°C)
February 2005
4
2
0
-2
-4
-6
-8
SINK 3A
-10
-40 -20 0 20 40 60 80 100 120
TEMPERATURE (°C)
VREF
vs. Temperature
18
4
2
0
-2
-4
-6
-8
SOURCE 3A
-10
-40 -20 0 20 40 60 80 100 120
TEMPERATURE (°C)
VCC Current
vs. Input Voltage
20
16
14
12
10
8
6
4
2
0
0
[VTT–VREF]
vs. Temperature
8
6
[VTT–V REF] (mV)
[VTT–V REF] (mV)
2
1
-4
-5
-3
10
8
6
SOURCE CURRENT (mA)
[VTT–V REF] (mV)
4
3
[VTT–VREF]
vs. Temperature
SOURCE CURRENT (mA)
5
[VTT–VREF]
vs. Output Current
1
2
3
4
5
INPUT VOLTAGE (V)
5
6
VCC Current
vs. Temperature
18
16
14
12
10
8
6
4
2 V = 5V
CC
0
-40 -20 0 20 40 60 80 100 120
TEMPERATURE (°C)
M9999-092004
MIC5162
Micrel, Inc.
Functional Diagram
VDDQ
VCC
R1
A
HD
–A
LD
VREF
R2
Shutdown
EN
GND
FB
COMP
Block Diagram
M9999-092004
6
February 2005
MIC5162
Micrel, Inc.
VDDQ
The VDDQ pin on the MIC5162 provides the source current
through the high side N-Channel and the reference voltage to
the device. The MIC5162 can operate at VDDQ voltages as
low as 1.35V. Due to the possibility of large transient currents
being sourced from this line, significant bypass capacitance
will aid in performance by improving the source impedance at
higher frequencies. Since the reference is simply VDDQ/2,
perturbations on the VDDQ will also appear at half the amplitude on the reference. For this reason, low ESR capacitors
such as ceramics or Oscons are recommended on VDDQ.
VTT
VTT is the actual termination point. VTT is regulated to VREF.
Due to high speed signaling, the load current seen by VTT is
constantly changing. To maintain adequate large signal
transient response, large Oscons ceramics are recommended
on VTT. The proper combination and placement of the Oscon
and ceramic capacitors is important to reduce both ESR and
ESL such that high-current high-speed transients do not
exceed the dynamic voltage tolerance requirement of VTT.
The larger Oscon capacitors provide bulk charge storage
while the smaller ceramic capacitors provide current during
the fast edges of the bus transition. Using several smaller
ceramic capacitors distributed near the termination resistors
is typically important to reduce the effects of PCB trace
inductance.
VREF
Two resistors dividing down the VDDQ voltage provide VREF
(Figure 3). The resistors are valued at around 17kΩ. A
minimum capacitor value of 120pF from VREF to ground is
required to remove high frequency signals reflected from the
source. Large capacitance values (>1500pF) should be
avoided. Values greater than 1500pF slow down VREF and
detract from the reference voltage’s ability to track VDDQ
during high speed load transients.
Applications Information
High performance memory requires high speed signaling.
This increase in speed requires special attention to maintain
signal integrity. Bus termination provides a means to increase signaling speed while maintaining good signal integrity. An example of bus termination is the Series Stub Termination Logic or SSTL. Figure 1 is an example of an SSTL 2
single ended series parallel terminated output. SSTL 2 is a
JEDEC signaling standard operating off of a 2.5V supply. It
consists of a series resistor (RS) and a terminating resistor
(RT). Values of RS will range between 10Ω to 30Ω with a
typical of 22Ω, while RT will range from 22Ω to 28Ω with a
typical value of 25Ω. VREF must maintain 1/2 VDD with a ±1%
tolerance, while VTT will dynamically sink and source current
to maintain a termination voltage of ±40mV from the VREF line
under all conditions. This method of bus termination reduces
common mode noise, settling time, voltage swings, EMI/RFI
and improves slew rates.
VDDQ
VTT
MEMORY
RT
RS
VREF
Figure 1.
The MIC5162 is a high performance linear controller, utilizing
scalable N-Channel MOSFETs to provide JEDEC compliant
bus termination. Termination is achieved by dividing down
the VDDQ voltage by half, providing the reference (VREF)
voltage. An internal error amplifier compares the termination
voltage (VTT) and VREF, controlling 2 external N-Channel
MOSFETs to sink and/or source current to maintain a termination voltage (VTT) equal to VREF. The N-Channels receive
their enhancement voltage from a separate VCC pin on the
device.
Although the general discussion is focused on SSTL, the
MIC5162 is also capable of providing bus terminations for
SCSI, GTL, HSTL, LV-TTL, Rambus, LV-PECL and other
systems.
Vishay
SUD50N02-06
MIC5162BMM
VDDQ
100µF
Oscon
HD
VCC
1µF
Ceramic
120pF
Vishay
SUD50N02-06
330µF
Oscon
LD
VREF COMP
GND
FB
220pF
3k
Figure 2.
February 2005
7
M9999-092004
MIC5162
Micrel, Inc.
tance. Although a 10µF ceramic capacitor will suffice for most
applications, input capacitance may need to be increased in
cases where the termination circuit is greater than 1" away
from the bulk capacitance.
Output Capacitance
Large, low ESR capacitors are recommended for the output
(VTT) of the MIC5162. Although low ESR capacitors are not
required for stability, they are recommended to reduce the
effects of high-speed current transients on VTT. The change
in voltage during the transient condition will be the effect of the
peak current multiplied by the output capacitor’s ESR. For
that reason, Oscon type capacitors are excellent for this
application. They have extremely low ESR and large capacitance-to-size ratio. Ceramic capacitors are also well suited to
termination due to their low ESR. These capacitors should
have a dielectric rating of X5R or X7R. Y5V and Z5U type
capacitors are not recommended, due to their poor performance at high frequencies and over temperature. The minimum recommended capacitance for a 3 amp peak circuit is
100µF. Output capacitance can be increased to achieve
greater transient performance.
MOSFET Selection
The MIC5162 utilizes external N-Channel MOSFETs to sink
and source current. MOSFET selection will settle to two main
categories: size and gate threshold (VGS).
MOSFET Power Requirements
One of the most important factors is to determine the amount
of power the MOSFET is going to be required to dissipate.
Power dissipation in an SSTL circuit will be identical for both
the high side and low side MOSFETs. Since the supply
voltage is divided by half to supply VTT, both MOSFETs have
the same voltage dropped across them. They are also
required to be able to sink and source the same amount of
current (for either all 0’s or all 1’s). This equates to each side
being able to dissipate the same amount of power. Power
dissipation calculation for the high-side driver is as follows:
VDDQ
VREF
120pF
GND
Figure 3.
VREF can also be manipulated for different applications. A
separate voltage source can be used to externally set the
reference point, bypassing the divider network. Also, external
resistors can be added from VREF to ground or VREF to VDDQ
to shift the reference point up or down.
VCC
VCC supplies the internal circuitry of the MIC5162 and provides the drive voltage to enhance the external N-Channel
MOSFETs. A small 1µF capacitor is recommended for bypassing the VCC pin. The minimum VCC voltage should be a
gate-source voltage above VTT without exceeding 6V. For
example, on an SSTL compliant terminator, VDDQ equals
2.5V and VTT equals 1.25V. If the N-Channel MOSFET
selected requires a gate source voltage of 2.5V, VCC should
be a minimum of 3.75V.
Feedback and Compensation
The feedback provides the path for the error amplifier to
regulate VTT. An external resistor must be placed between
the feedback and VTT. This allows the error amplifier to be
correctly externally compensated.
For most applications, a 3kΩ resistor is recommended.
The COMP pin on the MIC5162 is the output of the internal
error amplifier. By placing a capacitor between the COMP pin
and the feedback pin, this coupled with the feedback resistor
places an external pole on the error amplifier. With a 3kΩ
feedback resistor, a minimum 220pF capacitor is recommended for a 3A peak termination circuit. Increases in load,
multiple N-Channel MOSFETs and/or increase in output
capacitance may require feedback and/or compensation
capacitor values to be increased to maintain stability. Feedback resistor values should not exceed 100kΩ and compensation capacitors should not be less than 40pF.
Enable
The MIC5162 features an active high enable input. In the off
mode state, leakage currents are reduced to microamperes.
The enable input has thresholds compatible with TTL/CMOS
for simple logic interfacing. The enable pin can be tied directly
to VDDQ or VCC for functionality. Do not float the enable pin.
Floating this pin causes the enable to be in an indeterminate
state.
Input Capacitance
Although the MIC5162 does not require an input capacitor for
stability, using one greatly improves device performance.
Due to the high-speed nature of the MIC5162, low ESR
capacitors such as Oscon and ceramics are recommended
for bypassing the input. The recommended value of capacitance will depend greatly on the proximity to the bulk capaciM9999-092004
PD = (VDDQ − VTT ) × I _ SOURCE
Where I_source is the average source current.
Power dissipation for the low-side MOSFET is as follows;
PD = VTT × I _ SINK
Where I_sink is the average sink current.
In a typical 3 amp peak SSTL_2 circuit, power considerations
for MOSFET selection would occur as follows.
PD = (VDDQ − VTT ) × I _ SOURCE
PD = (2.5V − 1.25V) × 1.6A
PD = 2W
This typical SSTL_2 application would require both high-side
and low-side N-Channel MOSFETs to be able to handle 2
Watts each. In applications where there is excessive power
dissipation, multiple N-Channel MOSFETs may be placed in
parallel. These MOSFETs will share current, distributing
power dissipation across each device.
8
February 2005
MIC5162
Micrel, Inc.
MOSFET Gate Threshold
N-Channel MOSFETs require an enhancement voltage
greater than its source voltage. Typical N-Channel MOSFETs have a gate-source threshold (VGS) of 1.8V and higher.
Since the source of the high side N-Channel is connected to
VTT, the MIC5162 VCC pin requires a voltage equal to or
greater than the VGS voltage. For example, our SSTL_2
termination circuit has a VTT voltage of 1.25V. For an NChannel that has a VGS rating of 2.5V, the VCC voltage can
be as low as 3.75V. With an N-Channel that has a 4.5V VGS,
the minimum VCC required is 5.75V. Although these NChannels are driven below their full enhancement threshold,
it is recommended that the VCC voltage has enough margin
to be able to fully enhance the MOSFETs for large signal
transient response. In addition, low gate thresholds MOSFETs are recommended to reduce the VCC requirements.
The maximum MOSFET die (junction) temperature limits
maximum power dissipation. The ability of the device to
dissipate heat away from the junction is specified by the
junction-to-ambient (θJA) thermal resistance. This is the sum
of junction-to-case (θJC) thermal resistance, case-to-sink
(θCA) thermal resistance and sink-to-ambient (θSA) thermal
resistance;
θJA = θJC + θCS + θSA
In our example of a 3A peak SSTL_2 termination circuit, we
have selected a D-pack N-Channel MOSFET that has a
maximum junction temperature of 150°C. The device has a
junction-to-case thermal resistance of 1.5°C/Watt. Our application has a maximum ambient temperature of 60°C. The
required junction-to-ambient thermal resistance can be calculated as follows;
θJA =
TJ − TA
PD
Where TJ is the maximum junction temperature, TA is the
maximum ambient temperature and PD is the power dissipation.
In our example;
θJA =
TJ − TA
PD
150°C − 60°C
2W
= 45°C/W
θJA =
θJA
This shows that our total thermal resistance must be better
than 45°C/W. Since the total thermal resistance is a combination of all the individual thermal resistances, the amount of
heat sink required can be calculated as follows;
θSA = θJA − (θJC + θCA )
In our example;
θSA = 45°C/W − (1.5°C/W + 0.5°C/W )
θSA = 43°C/W
In most cases, case-to-sink thermal resistance can be assumed to be about 0.5°C/W.
The SSTL termination circuit for our example, using 2 D-pack
N-Channel MOSFETs (one high side and one on the low side)
will require at least a 43°C/W heat sink per MOSFET. This
may be accomplished with an external heat sink or even just
the copper area that the MOSFET is soldered to. In some
cases, airflow may also be required to reduce thermal resistance.
February 2005
9
M9999-092004
MIC5162
Micrel, Inc.
SUB75N03-07
VDDQ = 1.8V
VTT = 0.9V@+/-7A
SUB75N03-07
VDDQ
VCC 5V
VCC
EN
150µF/10V
Oscon
1µF
10V
HSD
EN
MIC5162BMM
SUB75N03-07
VREF
LSD
120pF
SUB75N03-07
680µF/4V
Oscon
Comp
220pF
FB
3.01K
GND
GND
Figure 4. DDR2 Termination
MIC5162 DDR2
40
VTT - VREF (mV)
30
20
10
0
-10
-20
-30
-5
-3 -1 1
3
CURRENT (A)
TIME (200µs/div)
M9999-092004
5
7
7A Load Transient
VTT AC COUPLED
(20mV/div)
OUTPUT CURRENT
(5A/div)
-7A Load Transient
VTT AC COUPLED
(20mV/div)
OUTPUT CURRENT
(5A/div)
-40
-7
TIME (200µs/div)
10
February 2005
MIC5162
Micrel, Inc.
Package Information
3.15 (0.122)
2.85 (0.114)
DIMENSIONS:
MM (INCH)
4.90 BSC (0.193)
3.10 (0.122)
2.90 (0.114)
1.10 (0.043)
0.94 (0.037)
0.30 (0.012)
0.15 (0.006)
0.50 BSC (0.020)
0.15 (0.006)
0.05 (0.002)
0.26 (0.010)
0.10 (0.004)
6° MAX
0° MIN
0.70 (0.028)
0.40 (0.016)
10-Pin SOP (M)
MICREL INC. 2180 FORTUNE DRIVE SAN JOSE, CA 95131 USA
TEL
+ 1 (408) 944-0800
FAX
+ 1 (408) 474-1000
WEB
http://www.micrel.com
This information furnished by Micrel in this data sheet is believed to be accurate and reliable. However no responsibility is assumed by Micrel for its use.
Micrel reserves the right to change circuitry and specifications at any time without notification to the customer.
Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can
reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant into
the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A Purchaser’s
use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser’s own risk and Purchaser agrees to fully indemnify
Micrel for any damages resulting from such use or sale.
© 2003 Micrel Incorporated
February 2005
11
M9999-092004
Similar pages