AP98T03GP/S-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic BVDSS 30V RDS(ON) 2.8mΩ ID G 200A S Description AP98T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast G D switching performance. It provides the designer with an extreme efficient S device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP98T03GP) are available for low-profile applications. G TO-220(P) D S TO-263(S) o Absolute Maximum Ratings@Tj=25 C(unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ . Rating Units 30 V +20 V 3 200 A 3 125 A 800 A Drain Current, VGS @ 10V Drain Current, VGS @ 10V 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 156 W Linear Derating Factor 1.25 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case 4 Value Units 0.8 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 40 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data and specifications subject to change without notice 1 201408255 AP98T03GP/S-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 30 - - V VGS=10V, ID=40A - - 2.8 mΩ VGS=4.5V, ID=30A - - 4 mΩ 0.8 - 2.5 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=10V, ID=30A - 75 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=30A - 71 115 nC Qgs Gate-Source Charge VDS=24V - 9 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 41 - nC td(on) Turn-on Delay Time VDS=15V - 14 - ns tr Rise Time ID=30A - 78 - ns td(off) Turn-off Delay Time RG=3.3Ω - 74 - ns tf Fall Time VGS=10V - 136 - ns Ciss Input Capacitance VGS=0V - 4960 7940 pF Coss Output Capacitance VDS=25V - 1210 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 1200 - pF Rg Gate Resistance f=1.0MHz - 1 2 Ω Min. Typ. . Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=40A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=10A, VGS=0V - 54 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 74 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 80A, calculated continuous current based on maximum allowable junction temperature is 200A. 4.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP98T03GP/S-HF 300 150 10 V 7.0 V 5.0 V 4.5 V ID , Drain Current (A) 250 10V 7.0V 5.0V 4.5V V G = 3.0 V T C = 1 50 o C 120 ID , Drain Current (A) o T C = 25 C 200 150 V G = 3.0 V 100 90 60 30 50 0 0 0 1 2 3 4 0 5 1 2 3 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 3.2 I D =30A I D =40A V G =10V T C =25 o C 3 2.8 . 2.6 Normalized RDS(ON) RDS(ON) (mΩ) 1.6 1.2 0.8 2.4 2.2 0.4 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 40 1.6 30 1.2 Normalized VGS(th) T j =25 o C IS(A) T j =150 o C 20 10 0.8 0.4 0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP98T03GP/S-HF f=1.0MHz 12 8000 V DS = 15 V V DS = 18 V V DS = 24 V 8 6000 C (pF) VGS , Gate to Source Voltage (V) I D = 30 A 10 6 C iss 4000 4 2000 C oss C rss 2 0 0 0 20 40 60 80 100 120 140 160 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 100 ID (A) 100us . 1ms 10ms 100ms DC 10 T C =25 o C Single Pulse Normalized Thermal Response (Rthjc) 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.1 1 10 100 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP98T03GS-HF MARKING INFORMATION 98T03GS Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 5 AP98T03GP-HF MARKING INFORMATION 98T03GP Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 6