F1423 Datasheet TX Differential Input RF Amplifier 600 MHz to 3000 MHz GENERAL DESCRIPTION FEATURES The F1423 is a 600 MHz to 3000 MHz TX differential input / single-ended output RF amplifier used in transmitter applications. This device is packaged in a 4mm x 4mm, 24-pin Thin QFN with 50 ohm differential RF input and 50 ohm single ended RF output impedances for ease of integration into the signal-path. • • • • • • • • • • • COMPETITIVE ADVANTAGE • • The F1423 TX Amp provides 13.1 dB gain with +41.8 dBm OIP3 and 5.1 dB noise figure at 2000 MHz. This device uses a single 5 V supply and 120 mA of ICC. In typical Base Stations, RF Amplifiers are used in the TX traffic paths to drive the transmit power amplifier. The F1423 TX Amplifier offers very high reliability due to its construction using silicon die in a QFN package. The F1423 includes a broadband differential input to accept AC-coupled signals directly from a balanced modulator or RF DAC architecture. Broadband 600 MHz – 3000 MHz 13.1 dB typical gain @ 2000 MHz 5.1 dB NF @ 2000 MHz +41.8 dBm OIP3 @ 2000 MHz +21.5 dBm output P1dB @ 2000 MHz Single 5 V supply voltage ICC = 120 mA Up to +105 °C TCASE operating temperature 50 Ω differential input impedance 50 Ω single ended output impedance Positive gain slope for board loss compensation Standby mode for power savings 4 mm x 4 mm, 24-pin TQFN package FUNCTIONAL BLOCK DIAGRAM RFOUT RFIN APPLICATIONS • • • • • • • • Multi-mode, Multi-carrier Transmitters GSM850/900 Base Stations PCS1900 Base Stations DCS1800 Base Stations WiMAX and LTE Base Stations UMTS/WCDMA 3G Base Stations PHS/PAS Base Stations Public Safety Infrastructure STBY BANDSEL ORDERING INFORMATION Tape & Reel F1423NBGI8 RF Product Line F1423, Rev O 11/6/2015 1 Green © 2015 Integrated Device Technology, Inc. F1423 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Units VCC to GND VCC -0.3 +5.5 V STBY, Band_Sel VCntl -0.3 VCC + 0.25 V RBIAS1 IRB1 +1.5 mA IRB2 +0.8 mA RBIAS2 1 VRFin -0.02 +0.02 V RFIN+, RFIN-, Current1 IRFin -5 +5 mA VRFout VCC - 0.15 VCC + 0.15 V RFIN+, RFIN-, Voltage RFOUT externally applied DC voltage RF Differential Input Power (applied for 24 hours maximum) Pin +22 dBm Continuous Power Dissipation Pdiss 1.5 W Junction Temperature Tj 150 °C Storage Temperature Range Tst 150 °C 260 °C -65 Lead Temperature (soldering, 10s) ElectroStatic Discharge – HBM (JEDEC/ESDA JS-001-2014) Class 2 (2000 V) ElectroStatic Discharge – CDM (JESD 22-C101F) Class C3 (1000 V) Note 1: The RFIN+ and RFIN- pins connect to an internal balun that presents a very low impedance to ground. Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL AND MOISTURE CHARACTERISTICS θJA (Junction – Ambient) 40 °C/W θJC (Junction – Case) [The Case is defined as the exposed paddle] 4 °C/W Moisture Sensitivity Rating (Per J-STD-020) MSL1 Zero-DistortionTM, TX Amplifier 2 Rev O 11/6/2015 F1423 F1423 RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage(s) Operating Temperature Range Symbol VCC TCASE Conditions Typ Max Units All VCC pins 4.75 5.25 V Case Temperature -40 +105 °C 600 1 RF Frequency Range FRF Operating Range RF Source Impedance ZRFI Differential RF Load Impedance ZRFO Single Ended RF Band Designation RF Frequency Range Min 3000 MHz 50 Ω 50 Ω 2 FRF_LB Low-band 600 1100 FRF_MB Mid-band 1400 2100 FRF_HB High-band 2100 30001 FRF_BB Broad-band 600 30001 MHz Note 1: Though device linearity is specified over the range from 700 MHz to 2700 MHz, gain flatness up to 3000 MHz is specified in the high-band and broadband tables to account for extended DPD bandwidth requirements. Note 2: To optimize RF performance, a different output match will be used for each of the 4 RF bands listed (see Table 2). In addition, different value amplifier bias resistors will be used to optimize performance in each of the 4 bands. Rev O 11/6/2015 3 Zero-DistortionTM, TX Amplifier F1423 F1423 SPECIFICATION - GENERAL See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF Amplifier, VCC = +5.0 V, TC = +25 °C. Parameter Logic Input High Logic Input Low Logic Current Supply Current3 Standby Current Symbol VIH VIL ISTBY IBAND ICC_LB ICC_MB ICC_HB ICC_BB ICC_STBY Power ON switching time TON Power OFF switching time TOFF Condition Min Typ Max 1.1 STBY pin Band_Sel pin Low-band bias setting Mid-band bias setting High-band bias setting Broad-band bias setting STBY = 5V 50% STBY to RF output settled to within ±0.5dB 50% STBY to DC standby current settled to within ±2mA of final ICC value 0.63 +10 +10 -10 -10 103 120 120 120 0.8 Units V µA mA 135 1 1.0 mA 1 µs 1 µs Note 1: Items in min/max columns in bold italics are Guaranteed by Test. Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization. Note 3: Use external resistors to set amplifier bias currents to optimize device linearity. See Table 2. Zero-DistortionTM, TX Amplifier 4 Rev O 11/6/2015 F1423 F1423 SPECIFICATION – LOW-BAND See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF Amplifier, VCC = +5.0 V, TC = +25 °C, FRF = 700 MHz, Pout = +7 dBm, R8 =2.1 kΩ, R9 =9.1 kΩ, C1 = 9 pF, Rsource = 50 Ω differential, Rload = 50 Ω single-ended, Band_Sel = open, EVKit trace connector and transformer losses are de-embedded. Parameter RF Input Return Loss RF Output Return Loss Common Mode Rejection Gain Gain Flatness Gain Ripple Noise Figure3 Output Third Order Intercept Point3 Output 1dB Compression3 Symbol RFINRL_LB Condition Min Typ 17 RFOUTRL_LB CMRRLB 700 MHz to 1100 MHz 12.0 GLB GFLAT_LB GRIPPLE_LB NFLB OIP3LB 1 Any 400 MHz BW from 700 MHz to 1100 MHz In any 20 MHz range over RF Band Max 12.8 dB 20.7 dB 12.6 13.2 OP1dBLB dB 0.4 dB ±0.04 dB 4.5 Tcase = +105 °C Pout = +4 dBm/tone 5 MHz tone separation Units dB dB 5.4 392 42.5 dBm 20 21.1 dBm F1423 SPECIFICATION – MID-BAND See F1423 Typical Application Circuit Unless otherwise stated, specifications apply when operated as a TX RF Amplifier, VCC = +5.0 V, TC = +25 °C, FRF = 2000 MHz, Pout = +7 dBm, R8 =2.4 kΩ, R9 =60.4 kΩ, C1 = 9 pF, Rsource = 50 Ω differential, Rload = 50 Ω single-ended, Band_Sel = GND, EVKit trace connector and transformer losses are de-embedded. Parameter RF Input Return loss RF Output Return Loss Common Mode Rejection Gain Gain Flatness Gain Ripple Noise Figure3 Output Third Order Intercept Point3 Output 1dB Compression3 Symbol RFINRL_MB Condition Min RFOUTRL_MB CMRRMB GRIPPLE_MB NFMB OIP3MB Max 16.5 1400 MHz to 2100 MHz Any 400MHz BW from 1400 MHz to 2100 MHz In any 20 MHz range over RF Band 13.1 dB 13.7 OP1dBMB dB 0.17 dB ±0.01 dB 5.1 Tcase = +105 °C Pout = +4 dBm/tone 5MHz tone separation Units dB dB 19.0 12.5 1 GMB GFLAT_MB Typ 15 5.8 dB 38.82 41.8 dBm 20.3 21.5 dBm Note 1: Items in min/max columns in bold italics are Guaranteed by Test. Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization. Note 3: Measured using external 1:1 transformer at the RF input. Rev O 11/6/2015 5 Zero-DistortionTM, TX Amplifier F1423 F1423 Specification – High-Band See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF Amplifier, VCC = +5.0 V, TC = +25 °C, FRF = 2700 MHz, Pout = +7 dBm, R8 =2.4 kΩ, R9 =60.4 kΩ, C1 = 6 pF, Rsource = 50 Ω differential, Rload = 50 Ω single-ended, Band_Sel = GND, EVKit trace connector and transformer losses are de-embedded. Parameter RF Input Return loss RF Output Return Loss Common Mode Rejection Gain Gain Flatness Gain Ripple Noise Figure3 Output Third Order Intercept Point3 Output 1dB Compression3 Symbol RFINRL_HB Condition Min Typ 15.5 RFOUTRL_HB CMRRHB 2100 MHz to 3000 MHz 12.4 GHB GFLAT_HB GRIPPLE_HB NFHB OIP3HB 1 Any 400 MHz BW from 2100 MHz to 3000 MHz In any 20 MHz range over RF Band Max Units dB 20 dB 18.5 dB 13.1 13.9 dB 0.23 dB ±0.015 dB 6.0 dB Tcase = +105 °C 6.6 Pout = +4 dBm/tone 5MHz tone separation 37.3 dBm 20.6 dBm 20.02 OP1dBHB F1423 Specification – Broad-Band See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF Amplifier, VCC = +5.0 V, TC = +25 °C, FRF = 2200 MHz, Pout = +7 dBm, R8 =2.4 kΩ, R9 =60.4 kΩ, C1 = 9 pF, Rsource = 50 Ω differential, Rload = 50 Ω single-ended, Band_Sel = GND, EVKIT trace connector and transformer losses are de-embedded. Parameter RF Input Return loss RF Output Return Loss Common Mode Rejection Gain Gain Flatness Symbol RFINRL_BB CMRRBB Typ 15.0 700 MHz to 3000 MHz 12.6 GBB GFLAT_BB GRIPPLE_BB Gain Slope GSLOPE_BB Output Third Order Intercept Point3 Output 1dB Compression3 Min RFOUTRL_BB Gain Ripple Noise Figure3 Condition NFBB OIP3BB 1 Any 400 MHz BW from 700 MHz to 3000 MHz In any 20 MHz range over 400 MHz BW Max Units dB 18.5 dB 18.5 dB 13.2 13.8 dB 0.4 dB ±0.04 dB ±0.002 dB/MHz 5.2 dB Tcase = +105 °C 5.8 Pout = +4 dBm/tone 5 MHz tone separation 41.4 dBm 21.4 dBm 20.52 OP1dBBB Note 1: Items in min/max columns in bold italics are Guaranteed by Test. Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization. Note 3: Measured using external 1:1 transformer at the RF input. Zero-DistortionTM, TX Amplifier 6 Rev O 11/6/2015 F1423 Table1: STBY Truth Table Parameter STBY Level Logic Low or Open Circuit Logic High Function Powered On Powered Off Table2: Component Settings for Optimized Linearity Performance per RF band Band Low - Band Mid - Band High - Band Broad - Band Frequency Range (MHz) 600 - 1100 1400 - 2100 2100 - 3000 700 - 3000 Band_Sel (Pin 11) Open GND GND GND Pin 14 to GND (kΩ) 2.1 2.4 2.4 2.4 Pin 15 to GND (kΩ) 9.1 60.4 60.4 60.4 C1 (pF) 9 9 6 9 ICC (mA) 104 120 120 120 TYPICAL OPERATING CONDITIONS (TOC) Unless otherwise noted for the TOC graphs on the following pages, the following conditions apply. • • • • • • • • • • • Vcc= 5.0 V Tcase = 25 °C (All temperatures are referenced to the exposed paddle). ZS = 50 Ohms Differential ZL = 50 Ohms Single Ended Board configured as defined in Table 2 for each band. Pout = 4 dBm / Tone 5 MHz Tone Spacing EVKIT traces, connectors, and transformer losses are de-embedded. S-parameters (S11, S21, S12, and S22) measured using a de-embedded Differential Board EVKit and the inputs are mathematically combined using an ideal 1:1 (50 Ω : 50 Ω) transformer to produce the 2 port S-parameters. Amplitude and phase imbalances measures RFIN+ to RFOUT and compares to RFIN- to RFOUT. Phase imbalance is the deviation from an ideal 180 degrees. OIP3, Output P1dB and Noise Figure measured using a Transformer Board EVKit. Note: The use of the external transformer T1 is included for simple 2 port evaluation purposes. At some frequencies the external transformer interacts with the on-chip balun affecting the gain and noise figure flatness responses. These interactions have been removed from the noise figure TOCs. Rev O 11/6/2015 7 Zero-DistortionTM, TX Amplifier F1423 TOCS [DIFFERENTIAL BOARD S-PARS, AMPLITUDE AND PHASE IMBALANCE, BROAD-BAND BIAS](-1-) Input Match vs. Vcc and TCASE RF Gain vs. Vcc and TCASE 0 15 4.75V, -40C 4.75V, 25C 4.75V, 105C 14.5 14 5.00V, -40C 5.00V, 25C 5.00V, 105C 5.25V, -40C 5.25V, 25C 5.25V, 105C -10 Input Match (dB) 13.5 Gain (dB) 4.75V, -40C 4.75V, 25C 4.75V, 105C -5 13 12.5 12 11.5 11 10 -15 -20 -25 -30 -40 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 0.6 0.9 1.2 Frequency (GHz) 5.00V, -40C 5.00V, 25C 5.00V, 105C 2.1 2.4 2.7 3 -12 5.25V, -40C 5.25V, 25C 5.25V, 105C 4.75V, -40C 4.75V, 25C 4.75V, 105C -14 Reverse Gain (dB) -5 1.8 Reverse Gain vs. Vcc and TCASE 0 4.75V, -40C 4.75V, 25C 4.75V, 105C 1.5 Frequency (GHz) Output Match vs. Vcc and TCASE Output Match (dB) 5.25V, -40C 5.25V, 25C 5.25V, 105C -35 10.5 -10 -15 -20 -25 -16 5.00V, -40C 5.00V, 25C 5.00V, 105C 5.25V, -40C 5.25V, 25C 5.25V, 105C -18 -20 -22 -24 -26 -30 -28 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 0.6 0.9 1.2 Frequency (GHz) 1.5 1.8 2.1 2.4 2.7 3 Frequency (GHz) Amplitude Imbalance vs. TCASE Phase Imbalance vs. TCASE 1.5 20 -40C 25C 105C 1 ZS = 25 Ohm / port ZL = 50 Ohm -40C 25C 105C 15 Phase Imbalance (deg) Amplitude Imbalance (dB) 5.00V, -40C 5.00V, 25C 5.00V, 105C 0.5 0 -0.5 -1 10 ZS = 25 Ohm / port ZL = 50 Ohm 5 0 -5 -10 -15 -1.5 -20 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 0.6 Frequency (GHz) Zero-DistortionTM, TX Amplifier 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 Frequency (GHz) 8 Rev O 11/6/2015 F1423 TOCS [TRANSFORMER BOARD, OIP3, P1dB, NOISE FIGURE, ICC, BROAD-BAND BIAS](-2-) OIP3 vs. Vcc and TCASE OIP3 vs. Pout Level 60 60 4.75V, -40C 4.75V, 25C 4.75V, 105C 55 50 5.00V, -40C 5.00V, 25C 5.00V, 105C 5.25V, -40C 5.25V, 25C 5.25V, 105C 50 45 45 OIP3 (dBm) OIP3 (dBm) 0dBm/tone 2dBm/tone 4dBm/tone 55 40 35 30 40 35 30 25 25 20 20 15 15 10 10 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 0.6 0.9 1.2 Frequency (GHz) 1.8 2.1 2.4 2.7 3 Frequency (GHz) Output P1dB vs. Vcc and TCASE Noise Figure vs. Vcc and TCASE 24 8 4.75V, -40C 4.75V, 25C 4.75V, 105C 5.00V, -40C 5.00V, 25C 5.00V, 105C 5.25V, -40C 5.25V, 25C 5.25V, 105C 4.75V, -40C 4.75V, 25C 4.75V, 105C 7.5 Noise Figure (dB) 23 OP1dB (dBm) 1.5 22 21 20 19 5.00V, -40C 5.00V, 25C 5.00V, 105C 5.25V, -40C 5.25V, 25C 5.25V, 105C 7 6.5 6 5.5 5 4.5 18 4 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 0.6 Frequency (GHz) 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 Frequency (GHz) Icc vs. Vcc and TCASE 140 -40C 25C 105C 135 Icc (mA) 130 125 120 115 110 105 100 4.75 5 5.25 Vcc (Volts) Rev O 11/6/2015 9 Zero-DistortionTM, TX Amplifier F1423 TOCS [DIFFERENTIAL BOARD S-PARS, AMPLITUDE AND PHASE IMBALANCE, LOW-BAND BIAS](-3-) RF Gain vs. Vcc and TCASE 15 4.75V, -40C 4.75V, 25C 4.75V, 105C 14.5 14 Input Match vs. Vcc and TCASE 5.00V, -40C 5.00V, 25C 5.00V, 105C 0 5.25V, -40C 5.25V, 25C 5.25V, 105C 5.00V, -40C 5.00V, 25C 5.00V, 105C 5.25V, -40C 5.25V, 25C 5.25V, 105C -10 Input Match (dB) 13.5 Gain (dB) 4.75V, -40C 4.75V, 25C 4.75V, 105C -5 13 12.5 12 11.5 -15 -20 -25 -30 11 -35 10.5 -40 10 0.6 0.7 0.8 0.9 1 1.1 1.2 0.6 1.3 0.7 0.8 Output Match vs. Vcc and TCASE 0 4.75V, -40C 4.75V, 25C 4.75V, 105C 1.1 1.2 1.3 -12 5.25V, -40C 5.25V, 25C 5.25V, 105C 4.75V, -40C 4.75V, 25C 4.75V, 105C -14 -10 -15 -20 -25 5.00V, -40C 5.00V, 25C 5.00V, 105C 5.25V, -40C 5.25V, 25C 5.25V, 105C -16 -18 -20 -22 -24 -26 -30 -28 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0.6 0.7 0.8 Frequency (GHz) 0.9 1 1.1 1.2 1.3 Frequency (GHz) Amplitude Imbalance vs. TCASE Phase Imbalance vs. TCASE 1.5 20 -40C 25C 105C 1 ZS = 25 Ohm / port ZL = 50 Ohm -40C 25C 105C 15 Phase Imbalance (deg) Amplitude Imbalance (dB) 1 Reverse Gain vs. Vcc and TCASE Reverse Gain (dB) Output Match (dB) -5 5.00V, -40C 5.00V, 25C 5.00V, 105C 0.9 Frequency (GHz) Frequency (GHz) 0.5 0 -0.5 -1 10 ZS = 25 Ohm / port ZL = 50 Ohm 5 0 -5 -10 -15 -20 -1.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0.6 1.3 Zero-DistortionTM, TX Amplifier 0.7 0.8 0.9 1 1.1 1.2 1.3 Frequency (GHz) Frequency (GHz) 10 Rev O 11/6/2015 F1423 TOCS [TRANSFORMER BOARD, OIP3, P1dB, NOISE FIGURE, ICC, LOW-BAND BIAS](-4-) OIP3 vs. Vcc and TCASE Output P1dB vs. Vcc and TCASE 24 60 4.75V, -40C 4.75V, 25C 4.75V, 105C 55 5.25V, -40C 5.25V, 25C 5.25V, 105C 45 OIP3 (dBm) 4.75V, -40C 4.75V, 25C 4.75V, 105C 23 Output P1dB (dBm) 50 5.00V, -40C 5.00V, 25C 5.00V, 105C 40 35 30 25 20 5.00V, -40C 5.00V, 25C 5.00V, 105C 5.25V, -40C 5.25V, 25C 5.25V, 105C 22 21 20 19 15 18 10 0.6 0.7 0.8 0.9 1 1.1 1.2 0.6 1.3 0.7 0.8 125 7 5.25V, -40C 5.25V, 25C 5.25V, 105C 1.1 1.2 1.3 -40C 25C 105C 120 6 115 5.5 110 Icc (mA) Noise Figure (dB) 6.5 5.00V, -40C 5.00V, 25C 5.00V, 105C 1 Icc vs. Vcc and TCASE Noise Figure vs. Vcc and TCASE 4.75V, -40C 4.75V, 25C 4.75V, 105C 0.9 Frequency (GHz) Frequency (GHz) 5 4.5 105 100 4 95 3.5 90 85 3 0.6 0.7 0.8 0.9 1 1.1 1.2 4.75 1.3 Rev O 11/6/2015 5 5.25 Vcc (Volts) Frequency (GHz) 11 Zero-DistortionTM, TX Amplifier F1423 TOCS [DIFFERENTIAL BOARD S-PARS, AMPLITUDE AND PHASE IMBALANCE, MID-BAND BIAS](-5-) RF Gain vs. Vcc and TCASE 14.5 4.75V, -40C 4.75V, 25C 4.75V, 105C 14 Input Match vs. Vcc and TCASE 5.00V, -40C 5.00V, 25C 5.00V, 105C 0 5.25V, -40C 5.25V, 25C 5.25V, 105C 4.75V, -40C 4.75V, 25C 4.75V, 105C -5 5.00V, -40C 5.00V, 25C 5.00V, 105C 5.25V, -40C 5.25V, 25C 5.25V, 105C Input Match (dB) Gain (dB) 13.5 13 12.5 12 11.5 -10 -15 -20 -25 11 -30 10.5 1.4 1.5 1.6 1.7 1.8 1.9 2 1.4 2.1 1.5 1.6 Output Match vs. Vcc and TCASE 0 4.75V, -40C 4.75V, 25C 4.75V, 105C 1.9 2 2.1 -12 5.25V, -40C 5.25V, 25C 5.25V, 105C 4.75V, -40C 4.75V, 25C 4.75V, 105C -14 -10 -15 -20 -25 5.00V, -40C 5.00V, 25C 5.00V, 105C 5.25V, -40C 5.25V, 25C 5.25V, 105C -16 -18 -20 -22 -24 -26 -30 -28 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 1.4 1.5 1.6 Frequency (GHz) 1.7 1.8 1.9 2 2.1 Frequency (GHz) Amplitude Imbalance vs. TCASE Phase Imbalance vs. TCASE 20 1.5 -40C 25C 105C 1 ZS = 25 Ohm / port ZL = 50 Ohm -40C 25C 105C 15 Phase Imbalance (deg) Amplitude Imbalance (dB) 1.8 Reverse Gain vs. Vcc and TCASE Reverse Gain (dB) Output Match (dB) -5 5.00V, -40C 5.00V, 25C 5.00V, 105C 1.7 Frequency (GHz) Frequency (GHz) 0.5 0 -0.5 -1 10 ZS = 25 Ohm / port ZL = 50 Ohm 5 0 -5 -10 -15 -20 -1.5 1.4 1.5 1.6 1.7 1.8 1.9 2 1.4 2.1 Zero-DistortionTM, TX Amplifier 1.5 1.6 1.7 1.8 1.9 2 2.1 Frequency (GHz) Frequency (GHz) 12 Rev O 11/6/2015 F1423 TOCS [TRANSFORMER BOARD, OIP3, P1dB, NOISE FIGURE, ICC, MID-BAND BIAS](-6-) OIP3 vs. Vcc and TCASE Output P1dB vs. Vcc and TCASE 24 60 4.75V, -40C 4.75V, 25C 4.75V, 105C 55 50 5.00V, -40C 5.00V, 25C 5.00V, 105C 5.25V, -40C 5.25V, 25C 5.25V, 105C OP1dB (dBm) 45 OIP3 (dBm) 4.75V, -40C 4.75V, 25C 4.75V, 105C 23 40 35 30 25 20 5.00V, -40C 5.00V, 25C 5.00V, 105C 5.25V, -40C 5.25V, 25C 5.25V, 105C 22 21 20 19 15 10 18 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 1.4 1.5 1.6 Frequency (GHz) Noise Figure vs. Vcc and TCASE 4.75V, -40C 4.75V, 25C 4.75V, 105C 140 5.25V, -40C 5.25V, 25C 5.25V, 105C 1.9 2 2.1 -40C 25C 105C 135 7 130 6.5 125 Icc (mA) Noise Figure (dB) 5.00V, -40C 5.00V, 25C 5.00V, 105C 1.8 Icc vs. Vcc and TCASE 8 7.5 1.7 Frequency (GHz) 6 5.5 120 115 5 110 4.5 105 4 100 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 4.75 Frequency (GHz) Rev O 11/6/2015 5 5.25 Vcc (Volts) 13 Zero-DistortionTM, TX Amplifier F1423 TOCS [DIFFERENTIAL BOARD S-PARS, AMPLITUDE AND PHASE IMBALANCE, HIGH-BAND BIAS](-7-) RF Gain vs. Vcc and TCASE 15 4.75V, -40C 4.75V, 25C 4.75V, 105C 14.5 14 Input Match vs. Vcc and TCASE 5.00V, -40C 5.00V, 25C 5.00V, 105C 0 5.25V, -40C 5.25V, 25C 5.25V, 105C Input Match (dB) 13 12.5 12 11.5 11 -15 -20 -25 -30 -40 10 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2 3 2.1 2.2 2.3 Output Match vs. Vcc and TCASE 0 4.75V, -40C 4.75V, 25C 4.75V, 105C 2.5 2.6 2.7 2.8 2.9 3 Reverse Gain vs. Vcc and TCASE -12 5.25V, -40C 5.25V, 25C 5.25V, 105C 4.75V, -40C 4.75V, 25C 4.75V, 105C -14 Reverse Gain (dB) -5 5.00V, -40C 5.00V, 25C 5.00V, 105C 2.4 Frequency (GHz) Frequency (GHz) Output Match (dB) 5.25V, -40C 5.25V, 25C 5.25V, 105C -35 10.5 -10 -15 -20 -25 5.00V, -40C 5.00V, 25C 5.00V, 105C 5.25V, -40C 5.25V, 25C 5.25V, 105C -16 -18 -20 -22 -24 -26 -30 -28 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 2 2.1 2.2 2.3 Frequency (GHz) 2.4 2.5 2.6 2.7 2.8 2.9 3 Frequency (GHz) Amplitude Imbalance vs. TCASE Phase Imbalance vs. TCASE 1.5 20 -40C 25C 105C 1 ZS = 25 Ohm / port ZL = 50 Ohm -40C 25C 105C 15 Phase Imbalance (deg) Amplitude Imbalance (dB) 5.00V, -40C 5.00V, 25C 5.00V, 105C -10 13.5 Gain (dB) 4.75V, -40C 4.75V, 25C 4.75V, 105C -5 0.5 0 -0.5 -1 10 ZS = 25 Ohm / port ZL = 50 Ohm 5 0 -5 -10 -15 -20 -1.5 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2 3 Zero-DistortionTM, TX Amplifier 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 Frequency (GHz) Frequency (GHz) 14 Rev O 11/6/2015 F1423 TOCS [TRANSFORMER BOARD, OIP3, P1dB, NOISE FIGURE, ICC, ACLR, HIGH-BAND BIAS](-8-) OIP3 vs. Vcc and TCASE Output P1dB vs. Vcc and TCASE 24 60 4.75V, -40C 4.75V, 25C 4.75V, 105C 55 50 5.00V, -40C 5.00V, 25C 5.00V, 105C 5.25V, -40C 5.25V, 25C 5.25V, 105C OP1dB (dBm) 45 OIP3 (dBm) 4.75V, -40C 4.75V, 25C 4.75V, 105C 23 40 35 30 25 20 5.00V, -40C 5.00V, 25C 5.00V, 105C 5.25V, -40C 5.25V, 25C 5.25V, 105C 22 21 20 19 15 10 18 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 2 2.1 2.2 2.3 Frequency (GHz) Noise Figure vs. Vcc and TCASE 4.75V, -40C 4.75V, 25C 4.75V, 105C 140 5.25V, -40C 5.25V, 25C 5.25V, 105C 2.6 2.7 2.8 2.9 3 -40C 25C 105C 135 7 130 6.5 125 Icc (mA) Noise Figure (dB) 5.00V, -40C 5.00V, 25C 5.00V, 105C 6 5.5 120 115 5 110 4.5 105 4 100 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 4.75 5 Frequency (GHz) 5.25 Vcc (Volts) WCDMA ACLR vs. Pout (PAR = 4.3 dB) WCDMA ACLR vs. Pout (PAR = 11.4 dB) -20 -20 ACLR1+ -30 ACLR1- ACLR2+ ACLR1+ ACLR2-30 Measurement at 2.7 GHz 1 DPCH, PAR = 4.3 dB Specified Pout = 7 dBm -40 ACLR (dBc) ACLR (dBc) 2.5 Icc vs. Vcc and TCASE 8 7.5 2.4 Frequency (GHz) -50 -60 -70 ACLR1- ACLR2+ ACLR2- Measurement at 2.7 GHz 64 DPCH, PAR = 11.4 dB Specified Pout = 7 dBm -40 -50 -60 -70 -80 -80 2 3 4 5 6 7 8 9 10 11 12 2 Average WCDMA POUT (dBm) Rev O 11/6/2015 3 4 5 6 7 8 9 10 11 12 Average WCDMA POUT (dBm) 15 Zero-DistortionTM, TX Amplifier F1423 PACKAGE DRAWING (4 mm x 4 mm 24-pin TQFN), NBG24 NOTE: THE F1423 USES THE P2 EXPOSED PADDLE DIMENSIONS NOTED BELOW Zero-DistortionTM, TX Amplifier 16 Rev O 11/6/2015 F1423 LAND PATTERN DIMENSION Land Pattern to Support 2.6 mm x 2.6 mm Exposed Paddle Version (See Version P2 of Package Drawing) Rev O 11/6/2015 17 Zero-DistortionTM, TX Amplifier F1423 NC GND NC NC NC NC 24 23 22 21 20 19 PIN DIAGRAM RFIN+ 1 18 GND GND 2 17 RFOUT RFIN- 3 16 GND GND 4 15 RBIAS2 14 RBIAS1 13 STBY Control Circuit NC 5 E.P. 9 10 11 GND VCC Band_Sel 12 8 NC GND 7 6 NC NC PIN DESCRIPTION Pin Name 1 RFIN+ 2, 4, 9, 12, 16, 18, 23 GND 3 RFIN- 5, 6, 7, 8, 19, 20, 21, 22, 24 NC 10 VCC 11 Band_Sel 13 STBY 14 15 RBIAS1 RBIAS2 17 RFOUT — EP Zero-DistortionTM, TX Amplifier Function Differential Input +. Pin looks like a DC short to ground. Must use external DC block if DC is present on RF line. Ground these pins. These pins are internally connected to the exposed paddle. Differential Input -. Pin looks like a DC short to ground. Must use external DC block if DC is present on RF line. No internal connection. OK to connect to GND, OK to connect to VCC. Application circuit ties these pins to ground. 5 V Power Supply. Connect to VCC and use bypass capacitors as close to the pin as possible. Leave pin open circuited for low-band select and connect 0 Ω resistor to GND for high-band select. Internally this pin has a 1.5 MΩ pull-up resistor that connects to VCC. Standby (High= device power OFF, Low/Open = device power ON). Internally this pin has a 1 MΩ pull-down resistor that is connected to GND. Connect external resistor to GND. Use value in Table 2. Connect external resistor to GND. Use value in Table 2. RF output. Must use external DC block as close to the pin as possible. Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple ground vias are also required to achieve the noted RF performance. 18 Rev O 11/6/2015 F1423 APPLICATIONS INFORMATION The F1423 has been optimized for use in high performance RF applications from 600 MHz to 3000 MHz. STBY The STBY control pin allows for power saving when the device is not in use. Setting the STBY pin to a logic low, or leaving the pin open, will put the device in normal operation mode. The STBY pin has an internal 1 Meg ohm resistor to ground. Applying a logic high to this pin will put the part in standby mode. Voltage should not be applied to the STBY pin without VCC present. Band_Sel The Band_Sel control pin can be used to adjust the current in the device for Mid Band, High Band, and Wide Band frequency applications. This is done by grounding the Band_Sel pin. Internally there is a 1.5 Meg ohm pull-up resistor. Voltage should not be applied to the Band_Sel pin without VCC present. RBias1 and RBias2 RBIAS1 (pin 14) and RBIAS2 (pin 15) use a single external resistor to ground on each pin to set the DC current in the device and to optimize the linearity performance of the amplifier stage. The resistor values in Table 2 can be used as a guide for the RF band of interest. By decreasing the resistor value to ground on the RBIAS1 pin will increase the DC current in the amplifier stage. The resistor to ground on RBIAS2 is used to optimize the linearity performance in conjunction with the resistor on RBIAS1. Amplifier Stability To ensure unconditional stability the value of R1 should be set to 510 Ohms. This will reduce the RF Gain, OIP3, and OP1dB by approx 0.4 dB. Additionally, shunt resistors to ground of approximately 1k ohm should be connected from pin 1 to ground and pin 3 to ground. This will stabilize the circuit due to common mode source impedances. The installed 1k resistor will add 0.1 dB degradation to the Gain and Noise Figure. The 1k ohm will also dampen any common mode amplitude and phase interactions from the differential source impedance and the F1423 differential input impedance. Power Supplies A common VCC power supply should be used for all pins requiring DC power. All supply pins should be bypassed with external capacitors to minimize noise and fast transients. Supply noise can degrade noise figure and fast transients can trigger ESD clamps and cause them to fail. Supply voltage change or transients should have a slew rate smaller than 1 V / 20 µs. In addition, all control pins should remain at 0 V (+/-0.3 V) while the supply voltage ramps or while it returns to zero. Control Pin Interface 19 20 21 22 23 24 If control signal integrity is a concern and clean signals cannot be guaranteed due to overshoot, undershoot, ringing, etc., the following circuit at the input of each control pin is recommended. This applies to all control pins 11 and 13. Note the recommended resistor and capacitor values do not necessarily match the EV kit BOM for the case of poor control signal integrity. 1 18 2 17 3 16 F1423 Exposed Pad (GND) 4 15 5 14 6 13 5k ohm STBY 12 11 10 9 8 7 2pF 5k ohm Band_Sel 2pF Rev O 11/6/2015 19 Zero-DistortionTM, TX Amplifier F1423 EVKIT PICTURE (DIFFERENTIAL BOARD) EVKIT PICTURE (TRANSFORMER BOARD) Zero-DistortionTM, TX Amplifier 20 Rev O 11/6/2015 F1423 EVKIT / APPLICATIONS CIRCUIT (DIFFERENTIAL BOARD) EVKit / Applications Circuit (Transformer Board) Rev O 11/6/2015 21 Zero-DistortionTM, TX Amplifier F1423 EVKIT BOM (DIFFERENTIAL BOARD) Part Ref QTY DESCRIPTION Mfr. Part # Mfr. C1 1 9.0 pF ±0.25 pF, 50 V, C0G, Ceramic Capacitor (0402) GRM1555C1H9R0C Murata C2 1 C3 1 1000 pF ±5%, 50 V, C0G, Ceramic Capacitor (0402) GRM1555C1H102J Murata 0.1 µF ±10%, 16 V, X7R, Ceramic Capacitor (0402) GRM155R71C104K Murata C4 1 10 µF ±20%, 6.3 V, X5R, Ceramic Capacitor (0603) GRM188R60J106M Murata ERJ-2GE0R00X Panasonic R1 1 Not installed (0402) R2, R3, R4 3 0 Ω Resistor, 1/10W, (0402) R5, R6 0 Not installed R7 1 2.1k Ω ±1%, Resistor, 1/10W, (0402) ERJ-2RKF2101X Panasonic R8 1 2.4k Ω ±1%, Resistor, 1/10W, (0402) ERJ-2RKF2401X Panasonic R9 1 60.4k Ω ±1%, Resistor, 1/10W, (0402) ERJ-2RKF6042X Panasonic R10 1 9.1k Ω ±1%, Resistor, 1/10W, (0402) ERJ-2RKF9101X Panasonic R11 1 Not installed R12 1 Not installed J1, J2, J3, J9 4 SMA_END_LAUNCH (small) 142-0711-821 Emerson Johnson J4, J5, J8 3 CONN HEADER VERT 2 x 1 Gold 961102-6404-AR 3M J6, J7 2 CONN HEADER VERT 2 x 4 Gold 67997-108HLF FCI U1 1 RF Amplifier F1423NBGI IDT 1 Printed Circuit Board (3 port) Zero-DistortionTM, TX Amplifier F1423 EVKIT (3 port) 22 Rev O 11/6/2015 F1423 EVKIT BOM (TRANSFORMER BOARD) Part Ref QTY Mfr. Part # Mfr. C1 1 9.0 pF ±0.25 pF, 50 V, C0G, Ceramic Capacitor (0402) DESCRIPTION GRM1555C1H9R0C Murata C2 1 1000 pF ±5%, 50 V, C0G, Ceramic Capacitor (0402) GRM1555C1H102J Murata C3 1 0.1 µF ±10%, 16 V, X7R, Ceramic Capacitor (0402) GRM155R71C104K Murata GRM188R60J106M Murata ERJ-2GE0R00X Panasonic C4 1 10 µF ±20%, 6.3 V, X5R, Ceramic Capacitor (0603) R1 1 Not installed (0402) R2, R3, R4 3 0 Ω Resistor, 1/10W, (0402) R5, R6 0 Not installed R7 1 2.1k Ω ±1%, Resistor, 1/10W, (0402) ERJ-2RKF2101X Panasonic R8 1 2.4k Ω ±1%, Resistor, 1/10W, (0402) ERJ-2RKF2401X Panasonic R9 1 60.4k Ω ±1%, Resistor, 1/10W, (0402) ERJ-2RKF6042X Panasonic R10 1 9.1k Ω ±1%, Resistor, 1/10W, (0402) ERJ-2RKF9101X Panasonic R11 1 Not installed ERJ-2RKF5100X Panasonic TC1-1-43+ Mini Circuits R12 1 Not installed R13, R14 2 510 Ω ±1%, Resistor, 1/10W, (0402) (Note 1) T1 1 1:1 wideband transformer J1, J3, J9 3 SMA_END_LAUNCH (small) 142-0711-821 Emerson Johnson J4, J5, J8 3 CONN HEADER VERT 2 x 1 Gold 961102-6404-AR 3M J6, J7 2 CONN HEADER VERT 2 x 4 Gold 67997-108HLF FCI U1 1 RF Amplifier F1423NBGI IDT 1 Printed Circuit Board (Transformer) F1423 EVKIT XFMR Note 1: When using an external transformer for evaluation, a common mode resonance interaction can occur with the on-chip balun. Resistors R13 and R14 will dampen the resonance but affects the Gain and NF by approx 0.2dB. TOP MARKINGS Part Number IDTF14 23NBGI Z512ACG Assembler Code ASM Test Step Rev O 11/6/2015 Date Code [YWW] (Week 12 of 2015) 23 Zero-DistortionTM, TX Amplifier F1423 EVKIT OPERATION The F1423 EVkits (single ended and differential) have a number of control features available. STBY (2 pin Header J5) Two-pin header J5 can be used to set the part for operational or standby mode. Leaving the two J5 pins unconnected will place it in the operational mode. Connecting the two J5 pins together will pull up the STBY pin to Vcc through R4 and place the part into the standby mode. Band_Sel (2 pin Header J4) Two-pin header J4 can be used to set the part for best operational performance in different RF bands. Based on Table 2 above the Low-Band performance is best with these two J4 pins left open while the other bands typically have these two pins shorted together. RF Band Biasing (RBIAS1, RBIAS2, Band_Sel) Below are 4 settings showing the recommended J4, J7, and J8 jumper connections for best linearity performance in the different RF bands. The jumpers (shown in red below) select the RBIAS1 and RBIAS2 resistor values along with the Band_Sel setting (see Table 2 above). Never have two shunts installed at the same time on header J7 since this may produce excessive bias current and damage the part. Broad-Band Low-Band Mid-Band Zero-DistortionTM, TX Amplifier High-Band 24 Rev O 11/6/2015 F1423 REVISION HISTORY SHEET Rev Date O 2015- Nov-6 Rev O 11/6/2015 Page Description of Change Initial Release 25 Zero-DistortionTM, TX Amplifier F1423 Corporate Headquarters 6024 Silver Creek Valley Road San Jose, CA 95138 USA Sales 1-800-345-7015 or 408-284-8200 Fax: 408-284-2775 www.idt.com Tech Support http://www.idt.com/support/technical-support DISCLAIMER Integrated Device Technology, Inc. (IDT) reserves the right to modify the products and/or specifications described herein at any time, without notice, at IDT’s sole discretion. Performance specifications and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT’s products for any particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties. IDT’s products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT. Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are the property of IDT or their respective third party owners. Copyright ©2015. Integrated Device Technology, Inc. All rights reserved. Zero-DistortionTM, TX Amplifier 26 Rev O 11/6/2015