Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 0, 10/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR industrial, broadcast and aerospace applications. MRFE6VP6300HR3 MRFE6VP6300HSR3 • Typical Performance: VDD = 50 Volts, IDQ = 100 mA Pout (W) f (MHz) Gps (dB) ηD (%) IRL (dB) Pulsed (100 μsec, 20% Duty Cycle) 300 Peak 230 26.5 74.0 --16 CW 300 Avg. 130 25.0 80.0 --15 Signal Type 1.8--600 MHz, 300 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs • Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles • 300 Watts CW Output Power • 300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec CASE 465M--01, STYLE 1 NI--780--4 MRFE6VP6300HR3 • Capable of 300 Watts CW Operation Features • Device can be used Single--Ended or in a Push--Pull Configuration • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection CASE 465H--02, STYLE 1 NI--780S--4 MRFE6VP6300HSR3 • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • RoHS Compliant • NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. • NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. RFin/VGS 3 1 RFout/VDS RFout/VGS 4 2 RFout/VDS Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +125 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C (Top View) Figure 1. Pin Connections Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 75°C, 300 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 50 Vdc, IDQ = 100 mA, 230 MHz Case Temperature 87°C, 300 W CW, 50 Vdc, IDQ = 1100 mA, 230 MHz Symbol Value (2,3) Unit °C/W ZθJC RθJC 0.05 0.19 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2010. All rights reserved. RF Device Data Freescale Semiconductor MRFE6VP6300HR3 MRFE6VP6300HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) B (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Symbol Min Typ Max Unit IGSS — — 1 μAdc 125 — — Vdc (1) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 50 mA) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 5 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 480 μAdc) VGS(th) 1.5 2.2 3.0 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test) VGS(Q) 1.7 2.5 3.2 Vdc Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.25 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.8 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 76 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 188 — pF On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 300 W Peak (60 W Avg.), f = 230 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle Power Gain Gps 25.0 26.5 28.0 dB Drain Efficiency ηD 72.0 74.0 — % Input Return Loss IRL — --16 --9 dB 1. Each side of device measured separately. MRFE6VP6300HR3 MRFE6VP6300HSR3 2 RF Device Data Freescale Semiconductor VBIAS + L1 C8 C9 + + + C14 C15 C10 C11 C12 C13 VSUPPLY C16 L2 C4 C5 C6 R1 C7 Z8 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z9 Z10 Z11 C1 Z1 Z2* Z3* Z4 Z5 Z6 Z7, Z8 Z13 C20 Z7 C17 C2 Z12 RF OUTPUT C18 C19 DUT C3 0.352″ x 0.080″ Microstrip 1.780″ x 0.080″ Microstrip 0.576″ x 0.080″ Microstrip 0.220″ x 0.220″ Microstrip 0.322″ x 0.220″ Microstrip 0.168″ x 0.220″ Microstrip 0.282″ x 0.630″ Microstrip Z9 Z10* Z11* Z12* Z13 0.192″ x 0.170″ Microstrip 0.366″ x 0.170″ Microstrip 2.195″ x 0.170″ Microstrip 0.614″ x 0.170″ Microstrip 0.243″ x 0.080″ Microstrip * Line length includes microstrip bends Figure 2. MRFE6VP6300HR3(HSR3) Test Circuit Schematic Table 5. MRFE6VP6300HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C20 15 pF Chip Capacitors ATC100B150JT500XT ATC C2 82 pF Chip Capacitor ATC100B820JT500XT ATC C3, C17 91 pF Chip Capacitors ATC100B910JT500XT ATC C4, C10 1000 pF Chip Capacitors ATC100B102JT50XT ATC C5, C11 10K pF Chip Capacitors ATC200B103KT50XT ATC C6 0.1 μF, 50 V Chip Capacitor CDR33BX104AKWS AVX C7 2.2 μF, 100 V Chip Capacitor HMK432B7225KM--T Taiyo Yuden C8 10 μF, 35 V Tantalum Capacitor T491D106K035AT Kemet C9 2.2 μF, 100 V Chip Capacitor G2225X7R225KT3AB ATC C12 0.1 μF, 100 V Chip Capacitor C1812F104K1RAC Kemet C13 0.01 μF, 100 V Chip Capacitor C1825C103K1GAC Kemet C14, C15, C16 220 μF, 100 V Electolytic Capacitors MCGPR100V227M16X26--RH Multicomp C18, C19 18 pF Chip Capacitors ATC100B180JT500XT ATC L1 120 nH Inductor 1812SMS--R12JLC Coilcraft L2 17.5 nH Inductor GA3095--ALC Coilcraft R1 1000 Ω, 1/2 W Chip Resistor CRCW20101K00FKEF Vishay PCB 0.030″, εr = 2.55 AD255A Arlon MRFE6VP6300HR3 MRFE6VP6300HSR3 RF Device Data Freescale Semiconductor 3 C8 C14 L1 C13 C6 C5 C1 C15 C16 C12 C7 C9 C11 C10 C4 C2 L2 R1 C17 C18 CUT OUT AREA C3 C20 C19 MRFE6VP6300H/HS Rev. 2 Figure 3. MRFE6VP6300HR3(HSR3) Test Circuit Component Layout MRFE6VP6300HR3 MRFE6VP6300HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — PULSED 60 1000 Pout, OUTPUT POWER (dBm) PULSED 100 Coss 10 Crss 1 0.1 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 0 10 20 40 30 P3dB = 56.0 dBm (398 W) 59 58 57 P1dB = 55.4 dBm (344 W) 56 Actual 55 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle 54 53 26 50 29 90 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle 31 32 26 60 25 50 Gps 24 40 23 30 27 Gps, POWER GAIN (dB) 70 26 25 50 V 24 23 40 V 22 20 20 600 45 V 35 V 21 ηD 100 VDD = 30 V 19 0 50 100 150 200 250 300 350 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power Figure 7. Pulsed Power Gain versus Output Power 29 80 35 V VDD = 30 V 40 V 45 V VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz 28 Pulse Width = 100 μsec, 20% Duty Cycle 50 V Gps, POWER GAIN (dB) 70 60 50 40 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle 30 0 50 100 150 200 250 300 350 27 85_C 26 90 80 60 25_C 25 25_C 400 --30_C 70 Gps 50 TC = --30_C 24 40 85_C 23 22 400 34 33 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle 28 80 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 30 Figure 5. Pulsed Output Power versus Input Power 90 ηD, DRAIN EFFICIENCY (%) 29 Note: Each side of device measured separately. 27 20 28 Pin, INPUT POWER (dBm) PULSED 29 22 20 27 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 4. Capacitance versus Drain--Source Voltage 28 Ideal P2dB = 55.8 dBm (380 W) 30 20 ηD 21 10 ηD, DRAIN EFFICIENCY (%) C, CAPACITANCE (pF) Ciss 100 10 600 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 8. Pulsed Drain Efficiency versus Output Power Figure 9. Pulsed Power Gain and Drain Efficiency versus Output Power MRFE6VP6300HR3 MRFE6VP6300HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS — TWO--TONE --10 VDD = 50 Vdc, IDQ = 1600 mA, f1 = 230 MHz f2 = 230.1 MHz, Two--Tone Measurements --20 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) --10 --30 --40 3rd Order --50 5th Order --60 --70 7th Order --80 10 100 400 3rd Order --30 --40 5th Order --50 7th Order --60 --70 1 0.1 10 TWO--TONE SPACING (MHz) Figure 10. Intermodulation Distortion Products versus Output Power Figure 11. Intermodulation Distortion Products versus Two--Tone Spacing 40 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) --15 IDQ = 1600 mA 29 Gps, POWER GAIN (dB) --20 Pout, OUTPUT POWER (WATTS) PEP 30 1400 mA 28 1100 mA 27 900 mA 26 25 VDD = 50 Vdc, Pout = 250 W (PEP), IDQ = 1600 mA Two--Tone Measurements VDD = 50 Vdc, f1 = 230 MHz, f2 = 230.1 MHz Two--Tone Measurements 650 mA 5 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 12. Two--Tone Power Gain versus Output Power 500 --20 VDD = 50 Vdc, f1 = 230 MHz, f2 = 230.1 MHz Two--Tone Measurements --25 --30 --35 --40 IDQ = 650 mA 900 mA 1100 mA 1400 mA --45 --50 10 1600 mA 100 400 Pout, OUTPUT POWER (WATTS) PEP Figure 13. Third Order Intermodulation Distortion versus Output Power MRFE6VP6300HR3 MRFE6VP6300HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 109 MTTF (HOURS) 108 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 300 W Avg., and ηD = 80%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 14. MTTF versus Junction Temperature — CW MRFE6VP6300HR3 MRFE6VP6300HSR3 RF Device Data Freescale Semiconductor 7 Zsource f = 230 MHz f = 230 MHz Zload Zo = 5 Ω VDD = 50 Vdc, IDQ = 100 mA, Pout = 300 W Peak f MHz Zsource Ω Zload Ω 230 0.65 + j2.79 1.64 + j2.85 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRFE6VP6300HR3 MRFE6VP6300HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRFE6VP6300HR3 MRFE6VP6300HSR3 RF Device Data Freescale Semiconductor 9 MRFE6VP6300HR3 MRFE6VP6300HSR3 10 RF Device Data Freescale Semiconductor MRFE6VP6300HR3 MRFE6VP6300HSR3 RF Device Data Freescale Semiconductor 11 MRFE6VP6300HR3 MRFE6VP6300HSR3 12 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Oct. 2010 Description • Initial Release of Data Sheet MRFE6VP6300HR3 MRFE6VP6300HSR3 RF Device Data Freescale Semiconductor 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MRFE6VP6300HR3 MRFE6VP6300HSR3 Document Number: MRFE6VP6300H Rev. 0, 10/2010 14 RF Device Data Freescale Semiconductor