@vic AV2001 TO-92 Plastic-Encapsulate Transistors AV2001 TRANSISTOR（NPN ） FEATURES Power dissipation PCM : 0.6 Collector current ICM : 0.7 Collector-base voltage V(BR)CBO : 30 TO—92 W （Tamb=25℃） 1. EMITTER A 2. COLLECTOR 3. BASE V 1 2 3 Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless Parameter otherwise Symbol Test specified） conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=1００µA ， IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100µA， IC=0 5 V Collector cut-off current ICBO VCB=30 V , IE=0 0.1 µA Collector cut-off current ICEO VCE=20 V , IB=0 0.1 µA Emitter cut-off current IEBO VEB=5 V , 0.1 µA IC=0 DC current gain hFE VCE=1V, IC=100m A Collector-emitter saturation voltage VCE(sat) IC=700mA, IB= 70m A 0.6 V Base-emitter saturation voltage VBE(sat) IC= 700mA, IB=70mA 1.2 V 90 400 VCE=6V, IC= 10mA f Transition frequency 50 T MHz f = 30MHz CLASSIFICATION OF hFE Rank M L K Range 90-180 135-270 200-400 Copyright @vic Electronics Corp. 1 Website http://www.avictek.com @vic Copyright @vic Electronics Corp. AV2001 2 Website http://www.avictek.com @vic AV2001 TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 0.135 4.700 0.169 1.270TYP e 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 Copyright @vic Electronics Corp. 0.380 3 0.063 0.000 0.015 Website http://www.avictek.com