Dc DCR72-8 Technical specifications of sensitive gate silicon controlled rectifiers voltage range - 100 to 600 volt Datasheet

DCR72-3
THRU
DCR72-8
DC COMPONENTS CO., LTD.
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
VOLTAGE RANGE - 100 to 600 Volts
CURRENT - 8.0 Amperes
Description
* Driven directly with IC and MOS device
* Feature proprietary, void-free glass passivated chips
* Available in voltage ratings from 100 to 600 volts
* Sensitive gate trigger current
* Designed for high volume, line-powered control
application in relay lamp drivers, small motor controls,
gate drivers for large thyristors
TO-220AB
Pinning
1 = Cathode, 2 = Anode, 3 = Gate
Rating
VDRM,
VRRM
100
200
400
600
V
On-State RMS Current
(TA=57oC, 180o Conduction Angles)
IT(RMS)
8.0
A
.055(1.40)
.045(1.14)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60Hz)
ITSM
80
A
.037(0.95)
.030(0.75)
Voltage and Reverse Voltage
DCR72-3
DCR72-4
DCR72-6
DCR72-8
Unit
.625(15.87)
.570(14.48)
Symbol
Peak Repetitive Off-State
Forward Peak Gate Current
IGM
1.0
A
Forward Peak Gate Power Dissipation
PGM
0.5
W
Forward Average Gate Power Dissipation
Operating Junction Temperature
Storage Temperature
.055(1.39)
.045(1.15)
.295(7.49)
.220(5.58)
Absolute Maximum Ratings(TA=25oC)
Characteristic
.185(4.70)
.173(4.40)
.405(10.28)
.380(9.66)
.151
Typ
(3.83)
PG(AV)
0.1
TJ
-40 to +110
TSTG
-40 to +150
.350(8.90)
.330(8.38)
1
2
.640 Typ
(16.25)
3
.562(14.27)
.500(12.70)
.024(0.60)
.014(0.35)
.100
Typ
(2.54)
W
o
C
Dimensions in inches and (millimeters)
o
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Characteristic
Peak Repetitive Forward or Reverse
Off-State Blocking Current
Symbol
TJ=25oC
TJ=110oC
IDRM, IRRM
Min
Typ
Max
-
-
10
-
-
500
Unit
Test Conditions
µA
VAK=Rated VDRM or VRRM
RGK=1KΩ
Peak Forward On-State Voltage
VTM
-
-
2.0
V
ITM=8A Peak
Continuous DC Gate Trigger Current
IGT
-
-
200
µA
VAK=7V DC, RL=100Ω
Continuous DC Gate Trigger Voltage
VGT
-
-
1.5
V
IH
-
-
6.0
mA
DC Holding Current
Critical Rate-of-Rise of Off-State Voltage
Gate Controlled Turn-on Time(tD+tR)
Thermal Resistance, Junction to Case
VAK=7V DC, RL=100Ω
RGK=1KΩ
dv/dt
-
8.0
-
V/µS
RGK=1KΩ
Tgt
-
2.2
-
µsec
IGT=10mA
RθJC
-
2.2
-
o
-
C/W
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