Fairchild MMBD1201 High conductance ultra fast diode Datasheet

MMBD1201 / 1203 / 1204 / 1205
CONNECTION DIAGRAMS
3
3
3
1201
3
1203
24
2 NC
1
1
2
SOT-23
2
MARKING
MMBD1201 24
MMBD1204A 27
MMBD1203 26
MMBD1205A 28
1
1
2
3
3
1204
1
1205
2
1
2
High Conductance Ultra Fast Diode
Sourced from Process 1P.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
W IV
Working Inverse Voltage
50
V
IO
Average Rectified Current
200
mA
IF
DC Forward Current
600
mA
if
Recurrent Peak Forward Current
700
mA
if(surge)
Tstg
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
1.0
2.0
-55 to +150
A
A
°C
TJ
Operating Junction Temperature
150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
Units
MMBD1201/1203/1204/1205*
350
2.8
357
mW
mW/°C
°C/W
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
ã 1997 Fairchild Semiconductor Corporation
MMBD1201 / 1203 / 1204 / 1205
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
BV
Breakdown Voltage
IR = 100 µA
IR
Reverse Current
VF
Forward Voltage
CT
Diode Capacitance
VR = 20 V
VR = 50 V
VR = 50 V, TA = 150°C
IF = 1.0 mA
IF = 10 mA
IF = 100 mA
IF = 200 mA
IF = 300 mA
VR = 0, f = 1.0 MHz
TRR
Reverse Recovery Time
Min
Max
Units
25
50
5.0
600
740
920
1.0
1.1
2.0
nA
nA
µA
mV
mV
mV
V
V
pF
4.0
nS
100
550
660
820
0.87
IRR = 1.0 mA, IF = IR = 10 mA,
RL = 100Ω
V
Typical Characteristics
150
Ta= 25°C
140
130
120
110
1
2
3
5
10
20 30
50
I R - REVERSE CURRENT (uA)
400
350
300
250
225
3
5
10
20 30
50
IF - FORWARD CURRENT (uA)
250
200
150
100
50
0
10
100
20
30
50
VR - REVERSE VOLTAGE (V)
70
100
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
VVFF - FORWARD VOLTAGE (mV)
VFF - FORWARD VOLTAGE (mV)
V
485
Ta= 25°C
450
2
300 Ta= 25°C
100
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
1
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 10 to 100 V
IR - REVERSE CURRENT (nA)
VVRR - REVERSE VOLTAGE (V)
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
725
Ta= 25°C
700
650
600
550
500
450
0.1
0.2 0.3 0.5
1
2
3
5
I F - FORWARD CURRENT (mA)
10
MMBD1201 / 1203 / 1204 / 1205
High Conductance Ultra Fast Diode
(continued)
Typical Characteristics
(continued)
CAPACITANCE vs REVERSE VOLTAGE
VR - 0.0 to 15 V
1.5
1.4
Ta= 25°C
1.3
CAPACITANCE (pF)
VVFF - FORWARD VOLTAGE (V)
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 - 800 mA
1.2
1
0.8
0.6
10
20
30
50
100
200 300
IF - FORWARD CURRENT (mA)
1.2
1.1
1
500
2.5
2
1.5
1
10
20
30
40
50
REVERSE CURRENT (mA)
60
PD - POWER DISSIPATION (mW)
3
IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms
2
4
6
8
10
REVERSE VOLTAGE (V)
500
IR
400
-F
OR
WA
R
300
100
0
0
SOT-23 Pkg
100
0
TS
50
100
150
o
TA - AMBIENT TEMPERATURE ( C)
300
0
CU
RR
EN
AD
DO-35 Pkg
200
D
TE
200
POWER DERATING CURVE
400
12
Y
Io - A
ST
VER
AT
AGE
E
REC
-m
TIFIE
D CU
A
RRE
NT mA
500
P
PDD - POWER DISSIPATION (mW)
REVERSE RECOVERY (nS)
Ta= 25°C
3.5
0
Average Rectified Current (Io) &
Forward Current (I F) versus
Ambient Temperature (TA)
REVERSE RECOVERY TIME vs REVERSE CURRENT
TRR - IR 10 mA vs 60 mA
4
Ta= 25°C
50
100
150
IO - AVERAGE TEMPERATURE ( oC)
200
14 15
MMBD1201 / 1203 / 1204 / 1205
High Conductance Ultra Fast Diode
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quite Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
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effectiveness.
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user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The data sheet is printed for reference information only.
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