MMBD1201 / 1203 / 1204 / 1205 CONNECTION DIAGRAMS 3 3 3 1201 3 1203 24 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 1 2 3 3 1204 1 1205 2 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 50 V IO Average Rectified Current 200 mA IF DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA if(surge) Tstg Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range 1.0 2.0 -55 to +150 A A °C TJ Operating Junction Temperature 150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max Units MMBD1201/1203/1204/1205* 350 2.8 357 mW mW/°C °C/W *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 ã 1997 Fairchild Semiconductor Corporation MMBD1201 / 1203 / 1204 / 1205 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions BV Breakdown Voltage IR = 100 µA IR Reverse Current VF Forward Voltage CT Diode Capacitance VR = 20 V VR = 50 V VR = 50 V, TA = 150°C IF = 1.0 mA IF = 10 mA IF = 100 mA IF = 200 mA IF = 300 mA VR = 0, f = 1.0 MHz TRR Reverse Recovery Time Min Max Units 25 50 5.0 600 740 920 1.0 1.1 2.0 nA nA µA mV mV mV V V pF 4.0 nS 100 550 660 820 0.87 IRR = 1.0 mA, IF = IR = 10 mA, RL = 100Ω V Typical Characteristics 150 Ta= 25°C 140 130 120 110 1 2 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) 400 350 300 250 225 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 250 200 150 100 50 0 10 100 20 30 50 VR - REVERSE VOLTAGE (V) 70 100 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA VVFF - FORWARD VOLTAGE (mV) VFF - FORWARD VOLTAGE (mV) V 485 Ta= 25°C 450 2 300 Ta= 25°C 100 FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA 1 REVERSE CURRENT vs REVERSE VOLTAGE IR - 10 to 100 V IR - REVERSE CURRENT (nA) VVRR - REVERSE VOLTAGE (V) REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA 725 Ta= 25°C 700 650 600 550 500 450 0.1 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 MMBD1201 / 1203 / 1204 / 1205 High Conductance Ultra Fast Diode (continued) Typical Characteristics (continued) CAPACITANCE vs REVERSE VOLTAGE VR - 0.0 to 15 V 1.5 1.4 Ta= 25°C 1.3 CAPACITANCE (pF) VVFF - FORWARD VOLTAGE (V) FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 - 800 mA 1.2 1 0.8 0.6 10 20 30 50 100 200 300 IF - FORWARD CURRENT (mA) 1.2 1.1 1 500 2.5 2 1.5 1 10 20 30 40 50 REVERSE CURRENT (mA) 60 PD - POWER DISSIPATION (mW) 3 IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms 2 4 6 8 10 REVERSE VOLTAGE (V) 500 IR 400 -F OR WA R 300 100 0 0 SOT-23 Pkg 100 0 TS 50 100 150 o TA - AMBIENT TEMPERATURE ( C) 300 0 CU RR EN AD DO-35 Pkg 200 D TE 200 POWER DERATING CURVE 400 12 Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA 500 P PDD - POWER DISSIPATION (mW) REVERSE RECOVERY (nS) Ta= 25°C 3.5 0 Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA) REVERSE RECOVERY TIME vs REVERSE CURRENT TRR - IR 10 mA vs 60 mA 4 Ta= 25°C 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200 14 15 MMBD1201 / 1203 / 1204 / 1205 High Conductance Ultra Fast Diode TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quite Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The data sheet is printed for reference information only.