MOSFET SMD Type N-Channel MOSFET AO6422 (KO6422) ( SOT-23-6 ) Unit: mm +0.1 ● VDS (V) = 20V 6 5 4 1 2 3 +0.2 1.6 -0.1 ● ID =5 A (VGS = 4.5V) ● RDS(ON) ＜ 55mΩ (VGS = 2.5V) ● RDS(ON) ＜ 72mΩ (VGS = 1.8V) 0.55 ● RDS(ON) ＜ 44mΩ (VGS = 4.5V) +0.2 2.8 -0.1 ■ Features 0.4 0.4 -0.1 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 0-0.1 +0.1 0.68 -0.1 +0.1 1.1 -0.1 D G 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 10 Sec Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation ID TA=70℃ PD V 5 3.9 4.2 3 A 30 IDM TA=25℃ 2 1.1 1.3 0.7 Thermal Resistance.Junction- to-Ambient RthJA 62.5 110 Thermal Resistance.Junction- to-Lead RthJL - 68 Junction Temperature Storage Temperature Range Unit TJ 150 Tstg -55 to 150 W ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO6422 (KO6422) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±8V VGS(th) VDS=VGS , ID=250 uA Gate Threshold Voltage Static Drain-Source On-Resistance On State Drain Current RDS(On) ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg ID=250μA, VGS=0V Typ VDS=20V, VGS=0V 1 VDS=20V, VGS=0V, TJ=55℃ 5 0.4 VGS=4.5V, ID=5A 55 VGS=1.8V, ID=3.5A 72 VDS=5V, ID=5A 30 450 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 7.5 6.2 8.2 td(on) 4.5 Turn-On Rise Time tr Turn-Off DelayTime td(off) VGS=4.5V, VDS=10V, ID=5A VGS=4.5V, VDS=10V, RL=2Ω,RG=3Ω IF= 5A, dI/dt= 100A/us IS=1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking Marking DR** www.kexin.com.cn Ω nC 0.4 6 ns 33 7.1 IS VSD pF 4.9 Turn-On DelayTime Diode Forward Voltage 560 52 1.3 Qrr S 74 Qgd Body Diode Reverse Recovery Charge mΩ A 14 Gate Drain Charge tf V VGS=2.5V, ID=4.5A Qg trr 1 44 Qgs Body Diode Reverse Recovery Time nA 60 TJ=125℃ uA ±100 VGS=4.5V, ID=5A VGS=4.5V, VDS=5V Unit V Gate Source Charge Turn-Off Fall Time Max 20 Total Gate Charge Maximum Body-Diode Continuous Current 2 Min 13 17 3.3 nC 2 A 1 V MOSFET SMD Type N-Channel MOSFET AO6422 (KO6422) ■ Typical Characterisitics 10 30 4.5V 3V 2.5V 25 8 6 2V ID(A) ID (A) 20 15 10 VDS= 5V VGS=1.5V 4 2 5 0 125°C 0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 70 Normalized On-Resistance 1.6 VGS= 1.8V 62 RDS(ON) (mΩ Ω) 25°C 0 54 46 VGS= 2.5V 38 VGS= 4.5V 30 VGS= 4.5V ID= 5A 1.4 1.2 1.0 0.8 0 3 6 9 12 15 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 120 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 ID= 5.0A 1E+00 100 1E-02 125°C IS (A) RDS(ON) (mΩ Ω) 1E-01 80 125°C 60 1E-03 25°C 1E-04 40 25°C 1E-05 20 1 2 3 4 5 6 7 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO6422 (KO6422) ■ Typical Characterisitics 800 5 VDS= 10V ID= 5A Capacitance (pF) VGS (Volts) 4 3 2 1 0 600 Ciss 400 200 Coss Crss 0 0 1 2 3 4 5 6 7 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 100 RDS(ON) limited 100µs 1ms 1 0.1 10ms 100ms 10s TJ(Max)=150°C TA=25°C 20 100 10 DC 1 0.01 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Zθ JA Normalized Transient Thermal Resistance 15 TJ(Max)=150°C TA=25°C 10µs Power (W) ID (Amps) 10 10 VDS (Volts) Figure 8: Capacitance Characteristics 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 4 www.kexin.com.cn 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) 100 1000