Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 3, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical Pulsed Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 20 dB Drain Efficiency — 64% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak Power Features • CW Operation Capability with Adequate Liquid Cooling • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Excellent Thermal Stability • Designed for Push - Pull Operation • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6VP41KHR6 MRF6VP41KHSR6 10 - 450 MHz, 1000 W, 50 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 375D - 05, STYLE 1 NI - 1230 MRF6VP41KHR6 CASE 375E - 04, STYLE 1 NI - 1230S MRF6VP41KHSR6 PARTS ARE PUSH - PULL RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +110 Vdc Gate - Source Voltage VGS - 6, +10 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C CW 1176 5.5 W W/°C CW Operation @ TC = 25°C Derate above 25°C © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF6VP41KHR6 MRF6VP41KHSR6 1 Table 2. Thermal Characteristics Characteristic Symbol Thermal Resistance, Junction to Case Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 450 MHz Case Temperature 81°C, 1000 W CW, 352.2 MHz RθJC Value (1,2) 0.03 0.16 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 2 (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS — — 10 μAdc V(BR)DSS 110 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 100 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 5 mA Gate Threshold Voltage (3) (VDS = 10 Vdc, ID = 1600 μAdc) VGS(th) 1 1.68 3 Vdc Gate Quiescent Voltage (4) (VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.2 3.5 Vdc Drain - Source On - Voltage (3) (VGS = 10 Vdc, ID = 4 Adc) VDS(on) — 0.28 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 3.3 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 147 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 506 — pF Off Characteristics (3) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain - Source Breakdown Voltage (ID = 300 mA, VGS = 0 Vdc) On Characteristics Dynamic Characteristics (3) Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 450 MHz, 100 μsec Pulse Width, 20% Duty Cycle Power Gain Gps 19 20 22 dB Drain Efficiency ηD 60 64 — % Input Return Loss IRL — - 18 -9 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Each side of device measured separately. 4. Measurement made with device in push - pull configuration. MRF6VP41KHR6 MRF6VP41KHSR6 2 RF Device Data Freescale Semiconductor B1 VBIAS + C2 C1 C3 L3 C4 L1 Z8 Z4 Z6 C26 C27 C28 + C29 C30 Z14 COAX1 Z2 C25 Z12 Z16 VSUPPLY + COAX3 Z18 Z20 C22 Z22 C23 Z10 RF RF INPUT Z1 Z24 OUTPUT C5 C7 Z3 C8 Z5 C9 Z7 C10 DUT Z11 C6 Z13 C15 C16 C17 C18 Z17 Z19 Z21 Z23 C19 C24 Z9 C21 Z15 COAX2 COAX4 C20 L2 L4 B2 VBIAS + C11 Z1 Z2*, Z3* Z4*, Z5* Z6, Z7 Z8*, Z9* Z10, Z11 Z12, Z13 C12 C13 C31 C14 0.366″ x 0.082″ Microstrip 0.170″ x 0.100″ Microstrip 0.220″ x 0.451″ Microstrip 0.117″ x 0.726″ Microstrip 0.792″ x 0.058″ Microstrip 0.316″ x 0.726″ Microstrip 0.262″ x 0.507″ Microstrip Z14*, Z15* Z16, Z17 Z18, Z19 Z20, Z21, Z22, Z23 Z24 PCB C32 C33 C34 + + C35 C36 VSUPPLY 0.764″ x 0.150″ Microstrip 0.290″ x 0.430″ Microstrip 0.100″ x 0.430″ Microstrip 0.080″ x 0.430″ Microstrip 0.257″ x 0.215″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 * Line length includes microstrip bends Figure 2. MRF6VP41KHR6 Test Circuit Schematic Table 5. MRF6VP41KHR6 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 47 Ω, 100 MHz Short Ferrite Beads 2743019447 Fair - Rite C1, C11 47 μF, 50 V Electrolytic Capacitors 476KXM063M Illinois C2, C12, C28, C34 0.1 μF Chip Capacitors CDR33BX104AKYS Kemet C3, C13, C27, C33 220 nF, 50 V Chip Capacitors C1812C224K5RAC Kemet C4, C14 2.2 μF, 50 V Chip Capacitors C1825C225J5RAC Kemet C5, C6, C8, C15 27 pF Chip Capacitors ATC100B270JT500XT ATC C7, C10 0.8 - 8.0 pF Variable Capacitors 27291SL Johanson Components C9 33 pF Chip Capacitor ATC100B330JT500XT ATC C16 12 pF Chip Capacitor ATC100B120JT500XT ATC C17 10 pF Chip Capacitor ATC100B100JT500XT ATC C18 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC C19 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC C20, C21, C22, C23, C25, C32 240 pF Chip Capacitors ATC100B241JT200XT ATC C24 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC C26, C31 2.2 μF, 100 V Chip Capacitors 2225X7R225KT3AB ATC C29, C30, C35, C36 330 μF, 63 V Electrolytic Capacitors EMVY630GTR331MMH0S Multicomp Coax1, 2, 3. 4 25 Ω Semi Rigid Coax, 2.2″ Long UT - 141C- 25 Micro - Coax L1, L2 2.5 nH, 1 Turn Inductors A01TKLC CoilCraft L3, L4 43 nH, 10 Turn Inductors B10TJLC Coilcraft MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor 3 C29 C27 C1 B1 MRF6VP41KH Rev. 1 C2 C3 C4 C25 L1 COAX1 C26 COAX3 L3 C5 C7 C23 C18 C19 C16 C10 CUT OUT AREA C8 C9 C6 COAX2 C30 C28 C15 C17 C22 C20 C21 C24 L4 L2 COAX4 C32 C31 C35 B2 C12 C14 C33 C36 C11 C13 C34 Figure 3. MRF6VP41KHR6 Test Circuit Component Layout MRF6VP41KHR6 MRF6VP41KHSR6 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 1000 100 ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) Ciss Coss 100 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc Crss 10 TJ = 200°C TJ = 175°C TJ = 150°C 10 TC = 25°C 1 1 0 10 20 30 40 50 10 100 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Note: Each side of device measured separately. Note: Each side of device measured separately. Figure 4. Capacitance versus Drain - Source Voltage Figure 5. DC Safe Operating Area 21 80 18 Gps 60 50 40 17 ηD 16 30 15 20 14 10 13 1 10 63 P1dB = 60.33 dBm (1078.94 W) 62 61 Actual 60 59 VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 μsec Duty Cycle = 20% 58 57 56 0 1000 2000 100 Ideal P3dB = 60.70 dBm (1174.89 W) 64 70 Pout, OUTPUT POWER (dBm) 19 65 ηD, DRAIN EFFICIENCY (%) VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 μsec Duty Cycle = 20% 20 Gps, POWER GAIN (dB) 1 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 55 34 35 36 37 38 39 40 41 42 43 Pout, OUTPUT POWER (WATTS) PULSED Pin, INPUT POWER (dBm) PULSED Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power Figure 7. Pulsed Output Power versus Input Power 23 44 22 IDQ = 6000 mA 20 3600 mA Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 22 21 1500 mA 20 750 mA 19 375 mA 18 VDD = 50 Vdc f = 450 MHz Pulse Width = 100 μsec Duty Cycle = 20% 150 mA 18 50 V 45 V 16 35 V VDD = 30 V IDQ = 150 Vdc, f = 450 MHz Pulse Width = 100 μsec Duty Cycle = 20% 14 17 40 V 12 10 100 1000 2000 0 200 400 600 800 1000 1200 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 8. Pulsed Power Gain versus Output Power Figure 9. Pulsed Power Gain versus Output Power 1400 MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 22 20 25_C Gps, POWER GAIN (dB) Pout, OUTPUT POWER (dBm) 21 TC = −30_C 60 85_C 55 50 VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 μsec Duty Cycle = 20% 45 40 19 TC = −30_C 25 30 35 40 45 90 80 70 85_C 18 60 25_C Gps 17 16 50 40 ηD 15 30 14 20 13 10 0 1000 2000 12 35 20 1 10 100 Pin, INPUT POWER (dBm) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 10. Pulsed Output Power versus Input Power Figure 11. Pulsed Power Gain and Drain Efficiency versus Output Power 109 0.2 0.18 0.16 D = 0.7 0.14 0.12 MTTF (HOURS) ZJC, THERMAL IMPEDANCE (°C/W) 100 VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 μsec Duty Cycle = 20% ηD, DRAIN EFFICIENCY (%) 65 D = 0.5 0.1 PD 0.08 0.04 D = Duty Factor = t1/t2 t1 = Pulse Width t2 = Pulse Period TJ = PD * ZJC + TC D = 0.1 0.02 0 0.00001 t1 t2 0.06 0.0001 0.001 0.01 0.1 1 108 107 106 10 RECTANGULAR PULSE WIDTH (S) Figure 12. Maximum Transient Thermal Impedance 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 100 μsec, Duty Cycle = 20%, and ηD = 64%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature MRF6VP41KHR6 MRF6VP41KHSR6 6 RF Device Data Freescale Semiconductor Zo = 2 Ω f = 450 MHz f = 450 MHz Zsource Zload VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz Zsource W Zload W 450 0.86 + j1.06 1.58 + j1.22 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − − Z source Output Matching Network + Z load Figure 14. Series Equivalent Source and Load Impedance MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS MRF6VP41KHR6 MRF6VP41KHSR6 8 RF Device Data Freescale Semiconductor MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor 9 MRF6VP41KHR6 MRF6VP41KHSR6 10 RF Device Data Freescale Semiconductor MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor 11 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Jan. 2008 • Initial Release of Data Sheet 1 Apr. 2008 • Added Fig. 12, Maximum Transient Thermal Impedance, p. 6 2 Sept. 2008 • Added Note to Fig. 4, Capacitance versus Drain - Source Voltage, to denote that each side of device is measured separately, p. 5 • Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per - side basis, p. 5 • Corrected Fig. 13, MTTF versus Junction Temperature, to reflect the correct die size and increased the MTTF factor accordingly, p. 6 3 Nov. 2008 • Added CW operation capability bullet to Features section, p. 1 • Added CW operation to Maximum Ratings table, p. 1 • Added CW thermal data to Thermal Characteristics table, p. 2 • Fig. 14, Series Equivalent Source and Load Impedance, corrected Zsource copy to read “Test circuit impedance as measured from gate to gate, balanced configuration” and Zload copy to read “Test circuit impedance as measured from drain to drain, balanced configuration”; replaced impedance diagram to show push - pull test conditions, p. 7 MRF6VP41KHR6 MRF6VP41KHSR6 12 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF6VP41KHR6 MRF6VP41KHSR6 Document Number: RF Device Data MRF6VP41KH Rev. 3, 11/2008 Freescale Semiconductor 13