Freescale MRF6VP41KHSR6 Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF6VP41KH
Rev. 3, 11/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for pulsed wideband applications with frequencies up to
450 MHz. Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
• Typical Pulsed Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA,
Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
Duty Cycle = 20%
Power Gain — 20 dB
Drain Efficiency — 64%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak
Power
Features
• CW Operation Capability with Adequate Liquid Cooling
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Excellent Thermal Stability
• Designed for Push - Pull Operation
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP41KHR6
MRF6VP41KHSR6
10 - 450 MHz, 1000 W, 50 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D - 05, STYLE 1
NI - 1230
MRF6VP41KHR6
CASE 375E - 04, STYLE 1
NI - 1230S
MRF6VP41KHSR6
PARTS ARE PUSH - PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +110
Vdc
Gate - Source Voltage
VGS
- 6, +10
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
CW
1176
5.5
W
W/°C
CW Operation @ TC = 25°C
Derate above 25°C
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6VP41KHR6 MRF6VP41KHSR6
1
Table 2. Thermal Characteristics
Characteristic
Symbol
Thermal Resistance, Junction to Case
Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 450 MHz
Case Temperature 81°C, 1000 W CW, 352.2 MHz
RθJC
Value (1,2)
0.03
0.16
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IGSS
—
—
10
μAdc
V(BR)DSS
110
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
100
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
mA
Gate Threshold Voltage (3)
(VDS = 10 Vdc, ID = 1600 μAdc)
VGS(th)
1
1.68
3
Vdc
Gate Quiescent Voltage (4)
(VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.2
3.5
Vdc
Drain - Source On - Voltage (3)
(VGS = 10 Vdc, ID = 4 Adc)
VDS(on)
—
0.28
—
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
3.3
—
pF
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
147
—
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
506
—
pF
Off Characteristics
(3)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain - Source Breakdown Voltage
(ID = 300 mA, VGS = 0 Vdc)
On Characteristics
Dynamic Characteristics (3)
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 450 MHz,
100 μsec Pulse Width, 20% Duty Cycle
Power Gain
Gps
19
20
22
dB
Drain Efficiency
ηD
60
64
—
%
Input Return Loss
IRL
—
- 18
-9
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Each side of device measured separately.
4. Measurement made with device in push - pull configuration.
MRF6VP41KHR6 MRF6VP41KHSR6
2
RF Device Data
Freescale Semiconductor
B1
VBIAS
+
C2
C1
C3
L3
C4
L1
Z8
Z4
Z6
C26
C27
C28
+
C29
C30
Z14
COAX1
Z2
C25
Z12
Z16
VSUPPLY
+
COAX3
Z18
Z20
C22
Z22
C23
Z10
RF
RF
INPUT Z1
Z24 OUTPUT
C5
C7
Z3
C8
Z5
C9
Z7
C10 DUT
Z11
C6
Z13
C15
C16
C17
C18
Z17
Z19
Z21
Z23
C19
C24
Z9
C21
Z15
COAX2
COAX4
C20
L2
L4
B2
VBIAS
+
C11
Z1
Z2*, Z3*
Z4*, Z5*
Z6, Z7
Z8*, Z9*
Z10, Z11
Z12, Z13
C12
C13
C31
C14
0.366″ x 0.082″ Microstrip
0.170″ x 0.100″ Microstrip
0.220″ x 0.451″ Microstrip
0.117″ x 0.726″ Microstrip
0.792″ x 0.058″ Microstrip
0.316″ x 0.726″ Microstrip
0.262″ x 0.507″ Microstrip
Z14*, Z15*
Z16, Z17
Z18, Z19
Z20, Z21, Z22, Z23
Z24
PCB
C32
C33
C34
+
+
C35
C36
VSUPPLY
0.764″ x 0.150″ Microstrip
0.290″ x 0.430″ Microstrip
0.100″ x 0.430″ Microstrip
0.080″ x 0.430″ Microstrip
0.257″ x 0.215″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
* Line length includes microstrip bends
Figure 2. MRF6VP41KHR6 Test Circuit Schematic
Table 5. MRF6VP41KHR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
47 Ω, 100 MHz Short Ferrite Beads
2743019447
Fair - Rite
C1, C11
47 μF, 50 V Electrolytic Capacitors
476KXM063M
Illinois
C2, C12, C28, C34
0.1 μF Chip Capacitors
CDR33BX104AKYS
Kemet
C3, C13, C27, C33
220 nF, 50 V Chip Capacitors
C1812C224K5RAC
Kemet
C4, C14
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C5, C6, C8, C15
27 pF Chip Capacitors
ATC100B270JT500XT
ATC
C7, C10
0.8 - 8.0 pF Variable Capacitors
27291SL
Johanson Components
C9
33 pF Chip Capacitor
ATC100B330JT500XT
ATC
C16
12 pF Chip Capacitor
ATC100B120JT500XT
ATC
C17
10 pF Chip Capacitor
ATC100B100JT500XT
ATC
C18
9.1 pF Chip Capacitor
ATC100B9R1CT500XT
ATC
C19
8.2 pF Chip Capacitor
ATC100B8R2CT500XT
ATC
C20, C21, C22, C23,
C25, C32
240 pF Chip Capacitors
ATC100B241JT200XT
ATC
C24
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
ATC
C26, C31
2.2 μF, 100 V Chip Capacitors
2225X7R225KT3AB
ATC
C29, C30, C35, C36
330 μF, 63 V Electrolytic Capacitors
EMVY630GTR331MMH0S
Multicomp
Coax1, 2, 3. 4
25 Ω Semi Rigid Coax, 2.2″ Long
UT - 141C- 25
Micro - Coax
L1, L2
2.5 nH, 1 Turn Inductors
A01TKLC
CoilCraft
L3, L4
43 nH, 10 Turn Inductors
B10TJLC
Coilcraft
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
3
C29
C27
C1
B1
MRF6VP41KH
Rev. 1
C2 C3
C4
C25
L1
COAX1
C26
COAX3
L3
C5 C7
C23
C18 C19
C16
C10
CUT OUT AREA
C8 C9
C6
COAX2
C30
C28
C15
C17
C22
C20
C21 C24
L4
L2
COAX4
C32
C31
C35
B2 C12
C14
C33
C36
C11
C13
C34
Figure 3. MRF6VP41KHR6 Test Circuit Component Layout
MRF6VP41KHR6 MRF6VP41KHSR6
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000
100
ID, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
Ciss
Coss
100
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
Crss
10
TJ = 200°C
TJ = 175°C
TJ = 150°C
10
TC = 25°C
1
1
0
10
20
30
40
50
10
100
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain - Source Voltage
Figure 5. DC Safe Operating Area
21
80
18
Gps
60
50
40
17
ηD
16
30
15
20
14
10
13
1
10
63
P1dB = 60.33 dBm (1078.94 W)
62
61
Actual
60
59
VDD = 50 Vdc
IDQ = 150 mA
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
58
57
56
0
1000 2000
100
Ideal
P3dB = 60.70 dBm (1174.89 W)
64
70
Pout, OUTPUT POWER (dBm)
19
65
ηD, DRAIN EFFICIENCY (%)
VDD = 50 Vdc
IDQ = 150 mA
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
20
Gps, POWER GAIN (dB)
1
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
55
34
35
36
37
38
39
40
41
42
43
Pout, OUTPUT POWER (WATTS) PULSED
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
Figure 7. Pulsed Output Power versus
Input Power
23
44
22
IDQ = 6000 mA
20
3600 mA
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
22
21
1500 mA
20
750 mA
19
375 mA
18
VDD = 50 Vdc
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
150 mA
18
50 V
45 V
16
35 V
VDD = 30 V
IDQ = 150 Vdc, f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
14
17
40 V
12
10
100
1000
2000
0
200
400
600
800
1000
1200
Pout, OUTPUT POWER (WATTS) PULSED
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
Figure 9. Pulsed Power Gain versus
Output Power
1400
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
22
20
25_C
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (dBm)
21
TC = −30_C
60
85_C
55
50
VDD = 50 Vdc
IDQ = 150 mA
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
45
40
19
TC = −30_C
25
30
35
40
45
90
80
70
85_C
18
60
25_C
Gps
17
16
50
40
ηD
15
30
14
20
13
10
0
1000 2000
12
35
20
1
10
100
Pin, INPUT POWER (dBm) PULSED
Pout, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Output Power versus
Input Power
Figure 11. Pulsed Power Gain and Drain Efficiency
versus Output Power
109
0.2
0.18
0.16
D = 0.7
0.14
0.12
MTTF (HOURS)
ZJC, THERMAL IMPEDANCE (°C/W)
100
VDD = 50 Vdc
IDQ = 150 mA
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
ηD, DRAIN EFFICIENCY (%)
65
D = 0.5
0.1
PD
0.08
0.04
D = Duty Factor = t1/t2
t1 = Pulse Width
t2 = Pulse Period
TJ = PD * ZJC + TC
D = 0.1
0.02
0
0.00001
t1
t2
0.06
0.0001
0.001
0.01
0.1
1
108
107
106
10
RECTANGULAR PULSE WIDTH (S)
Figure 12. Maximum Transient Thermal Impedance
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 100 μsec,
Duty Cycle = 20%, and ηD = 64%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
MRF6VP41KHR6 MRF6VP41KHSR6
6
RF Device Data
Freescale Semiconductor
Zo = 2 Ω
f = 450 MHz
f = 450 MHz
Zsource
Zload
VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak
f
MHz
Zsource
W
Zload
W
450
0.86 + j1.06
1.58 + j1.22
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
−
−
Z
source
Output
Matching
Network
+
Z
load
Figure 14. Series Equivalent Source and Load Impedance
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
MRF6VP41KHR6 MRF6VP41KHSR6
8
RF Device Data
Freescale Semiconductor
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
9
MRF6VP41KHR6 MRF6VP41KHSR6
10
RF Device Data
Freescale Semiconductor
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2008
• Initial Release of Data Sheet
1
Apr. 2008
• Added Fig. 12, Maximum Transient Thermal Impedance, p. 6
2
Sept. 2008
• Added Note to Fig. 4, Capacitance versus Drain - Source Voltage, to denote that each side of device is
measured separately, p. 5
• Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per - side basis, p. 5
• Corrected Fig. 13, MTTF versus Junction Temperature, to reflect the correct die size and increased the
MTTF factor accordingly, p. 6
3
Nov. 2008
• Added CW operation capability bullet to Features section, p. 1
• Added CW operation to Maximum Ratings table, p. 1
• Added CW thermal data to Thermal Characteristics table, p. 2
• Fig. 14, Series Equivalent Source and Load Impedance, corrected Zsource copy to read “Test circuit
impedance as measured from gate to gate, balanced configuration” and Zload copy to read “Test circuit
impedance as measured from drain to drain, balanced configuration”; replaced impedance diagram to
show push - pull test conditions, p. 7
MRF6VP41KHR6 MRF6VP41KHSR6
12
RF Device Data
Freescale Semiconductor
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140
Fax: +1 - 303 - 675 - 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2008. All rights reserved.
MRF6VP41KHR6 MRF6VP41KHSR6
Document
Number:
RF
Device
Data MRF6VP41KH
Rev. 3, 11/2008
Freescale
Semiconductor
13
Similar pages