DGNJDZ ABS4 Single phase 1.0 amp. glass passivated bridge rectifier Datasheet

ABS2
THRU
ABS10
Single Phase 1.0 AMP. Glass Passivated Bridge Rectifiers
VOLTAGE RANGE
Thin Mini-Dip
50 to 1000 Volts
CURRENT
1.0 Ampere
Features
0.010(0.25)
0.002(0.05)
0.006(0.15)
0~10 O
— High temperature soldering guaranteed:
0.006(0.15)
0.252(6.4)
molded plastic technique
0.236(6.0)
0.177(4.5)
— Glass passivated junction
— Ideal for printed circuit board
— Reliable low cost construction utilizing
0.169(4.3)
ABS
0.059(1.5)
260℃ / 10 seconds / 0.375” ( 9.5mm )
lead length at 5 lbs., ( 2.3 kg ) tension
— Small size, simple installation
Leads solderable per MIL-STD-202,
Method 208
— High surge current capability
0.008(0.2)
0.174(4.4)
-----
0.056(1.42)
0.193(4.9)
0.048(1.22)
0.21(5.4)
0.059(1.50) MAX.
0.006(0.15)
0.002(0.05)
0.150(3.8)
DETAIL "A", SCALE=20/1
A
0.033(0.85)
0.022(0.55)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol ABS2 ABS4
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
On glass-epoxy P.C.B.
On aluminum substrate
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 0.5A
Maximum DC Reverse Current @ TA=25℃
at Rated DC Blocking Voltage
Typical Thermal resistance Junction to Lead
On aluminum substrate
On Glass-Epoxy substrate
Operating Temperature Range
Storage Temperature Range
VRRM
VRMS
VDC
200
140
200
400
280
400
ABS6 ABS8 ABS10 Units
600
420
600
800
560
800
1000
700
1000
V
V
V
I(AV)
1.0
A
IFSM
30
A
VF
0.95
V
IR
5
uA
℃/W
TJ
25
62.5
80
-55 to +150
TSTG
-55 to +150
RθJL
RθJA
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m
m
℃
℃
RATINGS AND CHARACTERISTIC CURVES (ABS2 THRU ABS10)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
1.6
100
1.2
INSTANTANEOUS REVERSE CURRENT. ( A)
AVERAGE FORWARD CURRENT. (A)
1.4
ALUMINA SUBSTRATE
50.8mm X 50.8mm
SOLDERING LAND 1mm X 1mm
CONDUCTOR LAYER 20 mm
SUBSTRATE THICKNESS 0.64mm
SIN
1.0
0.8
0.6
0.4
0.2
0
0
20
40
80
60
120
100
140
10
Tj=100 0C
Tj=75 0C
1
0.1
Tj=25 0C
160
O
AMBIENT TEMPERATURE. ( C)
0.01
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.4- TYPICAL JUNCTION CAPACITANCE
30
1000
25
600
20
IFSM
15
10ms 10ms
1 Cycle
Ta=40 C
NON-REPETITIVE,
Single Half Sine-Wave
SINE(JEDEC
WAVE, Method)
Tj = 25OC BEFORE
SURGE CURRENT IS APPLIED
10
5
0
10
NUMBER OF CYCLES (CYCLE)
1
100
JUNCTION CAPACITANCE.(pF)
PEAK FORWARD SURGE CURRENT. (A)
35
500
Tj=25 0C
400
300
200
100
0
0.1
FIG.5- TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT. (A)
50
10
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
FORWARD VOLTAGE. (V)
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0.5
1
2
10
50 100
5
20
REVERSE VOLTAGE. (V)
200
500 800
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