HMC-AUH256 AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP v00.0907 GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz Typical Applications Features This HMC-AUH256 is ideal for: Gain: 21 dB • Point-to-Point Radios P1dB Output Power: +20 dBm • Point-to-Multi-Point Radios Wideband Performance: 17.5 to 40 GHz • VSAT Supply Voltage: +5V @ 295 mA • SATCOM Small Chip Size: 2.1 x 0.92 x 0.1 mm Functional Diagram General Description The HMC-AUH256 is a GaAs MMIC HEMT four stage Driver Amplifier which covers the frequency range of 17.5 to 40 GHz. The chip can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (1.93 mm2) size. The HMC-AUH256 offers 21 dB of gain and +20 dBm output power at 1 dB compression from a bias supply of +5V @ 295 mA. The HMC-AUH256 may also be used as a frequency doubler. Detail bias condition to achieve doubler operation. Electrical Specifi cations [1], TA = +25°C Vdd1 = Vdd2 = Vdd3 = Vdd4 = 5V, Idd1 + Idd2 + Idd3 + Idd4 = 295mA [2] Parameter Min. Frequency Range Typ. Max. GHz Gain 21 dB Input Return Loss 8 dB 15 8 dB dB Output Return Loss 20 - 30 GHz 30 - 45 GHz Output Power for 1 dB Compression 20 dBm Saturated Output Power 23 dBm Output IP3 27 dBm Supply Current (Idd1 + Idd2 + Idd3 + Idd4) 295 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1 = Vgg2 = Vgg3 = Vgg4 between -1V to +0.3V (Typ. -0.3V) 0-6 Units 17.5 - 41 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-AUH256 v00.0907 GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz Linear Gain vs. Frequency Fixtured Pout vs. Frequency P3dB P1dB Input Return Loss vs. Frequency Output Return Loss vs. Frequency AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP IP3 @ Pout= 18 dBm/tone Note: Measured Performance Characteristics (Typical Performance at 25°C) Vd1= Vd2= Vd3= Vd4= 5V, Id1= 50mA, Id2= 50mA, Id3= 75mA, Id4= 120mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com -7 HMC-AUH256 v00.0907 GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP x2 Pout vs. Frequency (vs Pad) Fixtured Pout vs. Frequency @ Pin= 10 dBm Fixtured Pout vs. Frequency @ Pin= 8 dBm Absolute Maximum Ratings Drain Bias Voltage +5.5 Vdc RF Input Power 15 dBm Drain Bias Current (Idd1, Idd2) 62 mA Drain Bias Current (Idd3) 93 mA Drain Bias Current (Idd4) 150 mA Gate Bias Voltage -1 to +0.3 Vdc Channel Temperature 180 °C Thermal Resistance (channel to die bottom) 77.5 °C/W Storage Temperature -65 to +150 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Note: Multiplier Performance Characteristics (Typical Performance at 25°C) Vd1= 2V, Vd2= Vd3= Vd4= 5V, Id1= 5mA, Id2+Id3+Id4= 245mA 0-8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-AUH256 v00.0907 GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP Outline Drawing 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com -9