DCR5980Z DCR5980Z Phase Control Thyristor Target Information DS5482-1.1 February 2002 FEATURES ■ Double Side Cooling ■ High Surge Capability ■ Low Inductance Internal Construction KEY PARAMETERS VDRM (max) IT(AV) (max) ITSM dV/dt dI/dt 1800V 5985A 98000A 1000V/µs 250A/µs APPLICATIONS ■ High Power Converters ■ DC Motor Control ■ High Voltage Power Supplies VOLTAGE RATINGS Part and Ordering Number DCR5980Z18 DCR5980Z16 DCR5980Z14 DCR5980Z12 Repetitive Peak Voltages VDRM and VDRM V 1800 1600 1400 1200 Conditions Tvj = 0˚ to 125˚C, IDRM = IRRM = 500mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. Outline type code: Z (See Package Details for further information) Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR5980Z14 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/9 www.dynexsemi.com DCR5980Z CURRENT RATINGS Tcase = 60˚C unless stated otherwise. Parameter Symbol Test Conditions Max. Units 5985 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 9400 A Continuous (direct) on-state current - 8400 A 3820 A IT Half wave resistive load Single Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 6000 A Continuous (direct) on-state current - 4920 A Max. Units 4650 A IT Half wave resistive load Tcase = 80˚C unless stated otherwise. Parameter Symbol Test Conditions Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 7300 A Continuous (direct) on-state current - 6360 A 2910 A IT Half wave resistive load Single Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 4570 A Continuous (direct) on-state current - 3630 A IT Half wave resistive load 2/9 www.dynexsemi.com DCR5980Z SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Test Conditions Units 78.0 kA 30.4 x 106 A2s 98.0 kA 48 x 106 A2s 10ms half sine, Tcase = 125˚C VR = 50% VRRM - 1/4 sine Surge (non-repetitive) on-state current Max. 10ms half sine, Tcase = 125˚C I2t for fusing VR = 0 DYNAMIC CHARACTERISTICS Parameter Symbol Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125˚C - 500 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125˚C - 1000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 1100A Repetitive 50Hz - 250 A/µs Gate source 1A, Non-repetitive - 500 A/µs IRRM/IRRM tr = 0.5µs, Tj = 125˚C Threshold voltage At Tvj = 125˚C - 0.77 V rT On-state slope resistance At Tvj = 125˚C - 0.05 mΩ tgd Delay time VD = 67% VDRM, gate source 20V, 10Ω 1.0 1.5 µs VT(TO) tr = 0.5µs, Tj = 25˚C IL Latching current Tj = 25˚C, VD = 5V 150 750 mA IH Holding current Tj = 25˚C, VG–K = ∞ 40 200 mA 3/9 www.dynexsemi.com DCR5980Z THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Test Conditions Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink Virtual junction temperature Min. Max. Units Double side cooled DC - 0.0065 ˚CW Single side cooled Anode DC - 0.013 ˚CW Cathode DC - 0.013 ˚CW Double side - 0.001 ˚CW (with mounting compound) Single side - 0.002 ˚CW On-state (conducting) - 135 ˚C Reverse (blocking) - 125 ˚C Clamping force 83.0kN Tstg Storage temperature range –55 125 ˚C Fm Clamping force 74.0 91.0 kN GATE TRIGGER CHARACTERISTICS AND RATINGS Parameter Symbol Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3.5 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 500 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 30 A PGM Peak gate power See table, gate characteristics curve 150 W PG(AV) Mean gate power 10 W - - 4/9 www.dynexsemi.com DCR5980Z CURVES 6000 8000 7000 6000 Mean power dissipation - (W) Instantaneous on-state current, IT -(A) 5000 5000 4000 3000 4000 3000 2000 2000 dc 1/2 wave 3 phase 6 phase 1000 1000 0 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 Instant on-state voltage, VT - (V) Fig.2 Maximum (limit) on-state characteristics 1.15 0 0 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A) 6000 Fig.3 Power dissipation VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT Where A = 0.4624 B = 0.0275 C = 2.2501 x 10–5 D = 0.0032 these values are valid for Tj = 125˚C for IT 500A to 7000A 5/9 www.dynexsemi.com DCR5980Z 1200 100 1100 Table gives pulse power PGM in Watts Pulse Width 1000 Gate trigger voltage, VGT - (V) Recoverd charge, Qr - (µC) 900 800 700 600 500 400 Frequency Hz 50 150 150 150 150 20 µs 100 200 500 1ms 10ms 100 150 150 150 100 - 400 150 125 100 25 - VFGM 100W 50W 20W 10W 10 it 99 im rL e pp 1 % Tj = 25˚C U 300 % 200 VGD Lo 100 0 0 1 3 5 7 9 2 4 6 8 10 Rate of decay of on-state current, di/dt - (A/µs) 11 we im rL it 1 IGD 0.1 0.001 IFGM 10 0.01 0.1 1.0 Gate trigger current, IGT - (A) Fig.4 Recovered charge Fig.5 Gate characteristics 0.1 50 50 ITSM I2t 40 30 30 20 20 10 10 0.01 Double side cooled I2t value - (A2s x 106) Thermal impedance - (˚C/W) Anode side cooled 0.001 Effective thermal resistance Junction to case ˚C/W Conduction 0.0001 0.001 Double side 0.0065 0.0072 0.0073 0.0076 d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 0.01 0.1 1 Anode side 0.0130 0.0137 0.0138 0.0141 10 Peak half sine on-state current - (kA) 40 I2t = Î2 x t 2 100 Time - (s) Fig.6 Maximum (limit) transient thermal impedance junction to case (˚C/W) 0 1 2 3 4 5 7 6 Pulse width - (ms) 8 9 0 10 Fig.7 Sub-cycle surge current 6/9 www.dynexsemi.com DCR5980Z Peak half sine wave on-state current - (kA) 25 20 15 10 5 0 0 5 10 15 20 25 30 35 Number of cycles @ 50Hz 40 45 50 Fig.8 Multi-cycle surge current 7/9 www.dynexsemi.com DCR5980Z PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 ± 0.5 depth 2.0 (One in each electrode) Gate tab Cathode tab Cathode Ø151 max 37.5 max Ø100 Ø100 Ø148 max Anode Nominal weight: 2800g Clamping force: 83kN ±10% Lead length: 500mm Lead terminal connector: M4 ring Package outline type code: Z 8/9 www.dynexsemi.com DCR5980Z POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICE CENTRES Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 SALES OFFICES North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2002 Publication No. DS5482-1 Issue No. 1.1 February 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 9/9 www.dynexsemi.com