JIEJIE MICROELECTRONICS CO. , Ltd JCT630/830 Series 30A SCRs Rev.2.0 DESCRIPTION: JCT630/830 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. 12 12 3 TO-220A 12 MAIN FEATURES Symbol Value Unit IT(RMS) 30 A IGT ≤15 mA VTM 1.55 V 3 TO-220B 3 TO-220F K(1) A(2) G(3) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Tstg -40-150 ℃ Tj -40-125 ℃ Repetitive peak off-state voltage(Tj=25℃) VDRM 600/800 V Repetitive peak reverse voltage(Tj=25℃) VRRM 600/800 V Non repetitive surge peak Off-state voltage VDSM VDRM +100 V Non repetitive peak reverse voltage VRSM VRRM +100 V IT(RMS) 30 A ITSM 330 A I2t 550 A2s Critical rate of rise of on-state current (IG=2×IGT) dI/dt 50 A/μs Peak gate current IGM 4 A Storage junction temperature range Operating junction temperature range TO-220A (TC=97℃) RMS on-state current TO-220B (TC=103℃) TO-220F (TC=95℃) Non repetitive surge peak on-state current (tp=10ms) I2t value for fusing (tp=10ms) TEL：+86-513-83639777 - 1 / 5- http://www.jjwdz.com JCT630/830 Series JieJie Microelectronics CO. , Ltd Average gate power dissipation Peak gate power PG(AV) 1 W PGM 5 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Value Symbol IGT VGT VGD Test Condition Unit VD=12V RL=33Ω VD=VDRM Tj=125℃ RL=3.3KΩ MIN. TYP. MAX. - - 15 mA - - 1.5 V 0.2 - - V IL IG=1.2IGT - - 50 mA IH IT=500mA - - 30 mA 500 - - V/μs dV/dt VD=2/3VDRM Gate Open Tj=125℃ STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Parameter ITM=55A tp=380μs VD=VDRM VR=VRRM Value(MAX) Unit Tj=25℃ 1.55 V Tj=25℃ 10 μA Tj=125℃ 1 mA Value Unit THERMAL RESISTANCES Symbol Rth(j-c) Parameter junction to case(AC) TO-220A 2.1 TO-220B 1.7 TO-220F 3.4 ℃/W ORDERING INFORMATION J CT 6 30 A JieJie Microelectronics Co.,Ltd SCRs 6:VDRM /VRRM ≥600V 8:VDRM /VRRM ≥800V TEL：+86-513-83639777 - 2 / 5- A:TO-220A B:TO-220B F:TO-220F IT(RMS):30A http://www.jjwdz.com JCT630/830 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA Dimensions Ref. m 8m E M Min. A a C2 H D V1 L3 F Φ . x3 Millimeters L1 C3 L2 TO-220A Min. Typ. Max. 4.60 0.173 0.181 B 0.61 0.88 0.024 0.035 C 0.46 0.70 0.018 0.028 C2 1.21 1.32 0.048 0.052 C3 2.40 2.72 0.094 0.107 D 8.60 9.70 0.339 0.382 E 9.80 10.4 0.386 0.409 F 6.55 6.95 0.258 0.274 H C Max. 4.40 2.54 28.0 0.1 29.8 1.102 3.75 L1 B Inches A G G Typ. L2 1.14 L3 2.65 1.70 0.045 2.95 0.104 45° V1 1.173 0.148 0.067 0.116 45° Dimensions Ref. mm E C2 D V1 L3 H JIE L1 C3 L2 4.60 0.173 0.181 B 0.61 0.88 0.024 0.035 C 0.46 0.70 0.018 0.028 C2 1.21 1.32 0.048 0.052 C3 2.40 2.72 0.094 0.107 D 8.60 9.70 0.339 0.382 E 9.60 10.4 0.378 0.409 F 6.20 6.60 0.244 0.260 H C TO-220B TEL：+86-513-83639777 Typ. 4.40 2.54 28.0 L2 1.14 L3 2.65 V1 - 3 / 5- 29.8 45° Max. 0.1 1.102 3.75 L1 B Inches Min. G G Typ. Max. A A F Φ Ma .8 x3 Millimeters Min. 1.173 0.148 1.70 0.045 2.95 0.104 0.067 0.116 45° http://www.jjwdz.com JCT630/830 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA Dimensions Ref. ax E Millimeters Min. A M C2 F L3 Φ 3. m 5m H D V1 L1 C3 L2 0.019 0.48 C2 2.40 2.70 0.094 0.106 C3 2.60 3.00 0.102 0.118 D 8.80 9.30 0.346 0.366 E 9.70 10.3 0.382 0.406 F 6.40 7.00 0.252 0.276 0.80 2.54 28.0 0.031 0.033 0.030 1.102 1.173 0.143 1.70 1.14 0.189 0.1 29.8 3.63 0.045 0.067 L3 3.30 0.130 V1 45° 45° FIG.2: RMS on-state current versus case temperature IT(RMS) (A) 36 P(w) 42 35 30 28 24 21 18 14 12 7 6 0 0.75 C FIG.1 Maximum power dissipation versus RMS on-state current 0 0.029 Max. 0.74 L2 TO-220F 0.83 Typ. A H C Min. 0.173 B L1 G Max. 4.80 4.40 G B Typ. Inches α=180° TO-220A / TO-220B IT(RMS) (A) 12 18 6 24 TO-220F Tc (℃) 0 0 30 FIG.3: Surge peak on-state current versus number of cycles 25 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) ITSM (A) 300 350 tp=10ms One cycle 300 100 250 200 150 10 100 Tj=125℃ Tj=25℃ 50 0 1 10 Number of cycles 100 TEL：+86-513-83639777 1000 - 4 / 5- 1 0 1 2 VTM (V) 3 4 5 http://www.jjwdz.com JCT630/830 Series JieJie Microelectronics CO. , Ltd FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponging value of I t (dI/dt < 50A/μs) 2 ITSM (A), I2 t (A2 s) 4000 FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) 3.0 2.5 ITSM 1000 2.0 I2 t dI/dt 1.5 100 IGT IH&IL 1.0 0.5 10 0.01 tp(ms) 0.1 1 10 0.0 -40 Tj(℃) -20 0 20 40 60 80 100 120 140 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the second version which is made in 20-Nov.-2014. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright ©2014 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. TEL：+86-513-83639777 - 5 / 5- http://www.jjwdz.com