HAT2221C Silicon N Channel MOS FET Power Switching REJ03G1240-0400 Rev.4.00 Feb 28, 2006 Features • Low on-resistance RDS(on) = 120 mΩ typ. (at VGS = 10 V) • Low drive current. • High density mounting • 4.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 2 3 4 5 DD D D 4 1 2 3 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Drain peak current ID (pulse)Note1 Body - Drain diode reverse drain current IDR Channel dissipation PchNote 2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm) Rev.4.00 Feb 28, 2006 page 1 of 6 Ratings 30 +20 / –10 1.5 6 1.5 790 150 –55 to +150 Unit V V A A A W °C °C HAT2221C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Symbol V(BR)DSS V(BR)GSS Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance IGSS IDSS VGS(off) RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time Turn - off delay time Fall time Body - Drain diode forward voltage Notes: 3. Pulse test Rev.4.00 Feb 28, 2006 page 2 of 6 Min. 30 Typ. — Max. — Unit V — — V |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr +20 –10 — — 0.4 — — 1.3 — — — — — — — — — — — 120 160 2 110 27 13 2.8 0.6 0.5 8 6 ±10 1 1.4 150 235 — — — — — — — — — µA µA V mΩ mΩ S pF pF PF nC nC nC ns ns td(off) tf VDF — — — 40 3 0.8 — — 1.1 ns ns V Test Conditions ID = 10 mA, VGS = 0 IG = ±10 µA, VDS = 0 VGS = +16 / –8 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 0.8 A, VGS = 10 V Note3 ID = 0.8 A, VGS = 4.5 V Note3 ID = 0.8 A, VDS = 10 V Note3 VDS = 10 V, VGS = 0, f = 1MHz VDD = 10 V, VGS = 10 V, ID = 1.5 A ID = 0.8 A, VGS = 10 V, VDD = 10 V, RL = 12.5 Ω, Rg = 4.7 Ω IF = 1.5 A, VGS = 0 Note3 HAT2221C Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating Ta = 25°C, 1shot pulse 30 When using the FR4 board. 100 150 Ambient Temperature 0.01 200 0.03 0.1 0.3 1 io n 3 10 30 100 Typical Transfer Characteristics 10 10 VDS = 10 V Pulse Test 10 V 5V 4.5 V 6 4V 3.5 V 4 3V 2 Drain Current ID (A) Pulse Test Drain Current ID (A) at Drain to Source Voltage VDS (V) Ta (°C) Typical Output Characteristics 8 er s m 50 op 10 0 C Operation in this area is limited by RDS(on) 0.03 µs 0.1 = D 0.3 s 0.2 1 PW 0.4 3 0 10 0.6 10 µs 10 m Drain Current ID (A) 0.8 100 Test Condition : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), Ta = 25°C 1 Channel Dissipation Pch (W) 1.0 2.5 V 8 25°C 6 Tc = 75°C –25°C 4 2 VGS = 2 V 2 4 6 8 0 10 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 400 Pulse Test 300 1.5 A 200 0.8 A 100 ID = 0.5 A 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Rev.4.00 Feb 28, 2006 page 3 of 6 Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) 0 1000 Pulse Test VGS = 4.5 V 100 10 0.01 10 V 0.1 1 Drain Current ID (A) 10 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2221C 400 Pulse Test ID = 0.5, 0.8 A 300 1.5 A 200 4.5 V 0.5, 0.8, 1.5 A 100 VGS = 10 V 0 –25 0 25 50 75 Case Temperature 100 125 150 Tc 10 Tc = –25°C 1 25°C 75°C 0.1 VDS = 10 V Pulse Test 0.01 12 20 8 10 4 VDD = 30 V 20 V 10 V 0 0.8 1.6 2.4 3.2 10 0 Ciss 100 30 Coss Crss 10 VGS = 0 f = 1 MHz 1 4 0 5 10 20 15 Gate Charge Qg (nc) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage Switching Characteristics 100 8 Switching Time t (ns) Reverse Drain Current IDR (A) 3 300 3 10 10 V 6 VGS = 0 4 2 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Rev.4.00 Feb 28, 2006 page 4 of 6 td(off) td(on) 10 tr tf VGS = 4.5 V, VDS = 10 V Rg = 4.7 Ω Pulse Test 0 1 1000 Capacitance C (pF) 16 VGS VDD = 10 V 20 V 30 V VDD 30 0.3 Typical Capacitance vs. Drain to Source Voltage Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) ID = 1.5 A 0.1 Drain Current ID (A) (°C) Dynamic Input Characteristics 40 0.03 1 0.1 1 Drain Current ID (A) 10 HAT2221C Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. RL 4.7 Ω Vin 10 V Vin Vout VDD = 10 V 10% 10% 90% td(on) Rev.4.00 Feb 28, 2006 page 5 of 6 10% tr 90% td(off) tf HAT2221C Package Dimensions JEITA Package Code Package Name CMFPAK-6 RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g D A e c E A HE A x M LP L b S A Reference Symbol e A2 A A1 y S S e1 b b1 l1 c1 b2 c Pattern of terminal position areas A-A Section A A1 A2 b b1 c c1 D E e HE L LP x y b2 e1 l1 Dimension in Millimeters Min 0.6 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 Nom 0.22 0.2 0.13 0.11 2.0 1.7 0.65 2.1 0.2 Max 0.8 0.01 0.79 0.3 0.15 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 1.65 0.5 Ordering Information Part Name HAT2221C-EL-E Quantity 3000 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Feb 28, 2006 page 6 of 6 Sales Strategic Planning Div. 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