SMD General Purpose Bridge Rectifier Diode B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features MBS -Rating to 1000V PRV. 0.031 (0.80) 0.019 (0.50) -Ideal for printed circuit board. + - -Reliable low cost construction utilizing molded plastic technique results in inexpensive product. 0.165 (4.20) 0.150 (3.80) XXX -Pb free product. 0.014 (0.35) 0.006 (0.15) 0.106 (2.70) 0.090 (2.30) 0.275 (7.0) max Mechanical data -Polarity: Symbol molded on body. 0.008 (0.20)max -Weight: 0.125 grams. -Mounting position: Any. 0.193 (4.90) 0.177 (4.50) 0.106 (2.70) 0.090 (2.30) Dimensions in inches and (millimeter) Maximum Rating And Electrical Characteristics Rating at TA=25°C, unless otherwise noted. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol B05S-G B1S-G B2S-G B4S-G B6S-G B8S-G B10S-G B1S B2S B4S B6S B8S B10S Unit Parameter Marking B05S Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current (Note 1) @TA=40°C I(AV) 0.8 A Peak Forward Surge Current, 8.3mS single half sine-wave, superimposed on rated load (JEDEC Method) IFSM 30 A Maximum Forward Voltage at 0.8A DC VF 1.1 V Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 500 μA CJ 15 pF RθJA 75 °C/W TJ -55 to +150 °C TSTG -55 to +150 °C @TJ=25°C @TJ=125°C Typical Junction Capacitance per element (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range Notes: 1. Mounted on P.C. Board. 2. Measured at 1MHz and applied reverse voltage of 4V DC. 3. Thermal resistance: Junction to Ambient. REV:D Page 1 QW-BBR01 Comchip Technology CO., LTD. SMD General Purpose Bridge Rectifier Diode RATING AND CHARACTERISTIC CURVES (B05S-G thru B10S-G) Fig.1 - Forward Current Derating Curve Fig.2 - Maximum Non-Repetitive Surge Current 40 Peak Forward Surge Current, (A) Average Forward Current, (A) 1.0 0.8 0.6 0.4 Mounted on PC board, single phase half wave 60Hz resistive or inductive load 0.2 0.1 20 40 60 80 100 120 140 20 10 Pulse width 8.3mS, single half-sine wave (JEDEC Method) 0 160 1 10 100 Ambient temperature, (°C) Number of Cycles at 60Hz Fig.3 - Typical Reverse Characteristics Fig.4 - Typical Forward Characteristics 100 10 I nstantaneous Forward Current, (A) Instantaneous Reverse Current, (µA) 30 TJ=125°C 10 1.0 TJ=25°C 0.1 0.01 0 20 40 60 80 100 120 140 1.0 0.1 TJ=25°C Pulse Width=300μS 0.01 0 Percent of Rated Peak Reverse Voltage, (%) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Instantaneous Forward Voltage, (V) Fig.5 - Typical Junction Capacitance Capacitance, (pF) 100 10 TJ=25°C f=1MHz 1.0 1 10 100 Reverse Voltage, (V) REV:D Page 2 QW-BBR01 Comchip Technology CO., LTD. SMD General Purpose Bridge Rectifier Diode Reel Taping Specification d P0 P1 Index hole - + XXX T E F W B P C A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed MBS MBS SYMBOL A B C d D D1 D2 (mm) 4.90 ± 0.10 7.24 ± 0.10 3.33 ± 0.10 1.55 ± 0.05 330 50.0 MIN. 13.00 ± 0.20 (inch) 0.193 ± 0.004 0.285 ± 0.004 0.131 ± 0.004 0.061 ± 0.002 13 1.969 MIN. 0.512 ± 0.008 SYMBOL E F P P0 P1 T W W1 (mm) 1.75 ± 0.10 5.50 ± 0.05 8.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 0.30 12.00 ± 0.30 12.00~14.40 (inch) 0.069 ± 0.004 0.217 ± 0.002 0.315 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.012 0.472 ± 0.012 0.472~0.657 REV:D Page 3 QW-BBR01 Comchip Technology CO., LTD. SMD General Purpose Bridge Rectifier Diode Suggested PAD Layout A MBS SIZE (mm) (inch) A 0.82MIN 0.032MIN B 2.55REF 0.100REF C 0.92MIN 0.036MIN D 7.00MAX 0.276MAX D C B Standard Packaging REEL PACK Case Type MBS REEL Reel Size ( pcs ) (inch) 3,000 13 REV:D Page 4 QW-BBR01 Comchip Technology CO., LTD.