Fairchild FQP8N80C 800v n-channel mosfet Datasheet

TM
QFET
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU
800V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
•
•
•
•
•
•
•
8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V
Low gate charge ( typical 35 nC)
Low Crss ( typical 13 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS Compliant
D
!
●
◀
G!
G DS
TO-220
Absolute Maximum Ratings
Symbol
VDSS
ID
TO-220F
GD S
FQP Series
▲
●
●
FQPF Series
!
S
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQP8N80C
FQPF8N80C
800
- Continuous (TC = 100°C)
Units
V
8
8*
A
5.1
5.1 *
A
32 *
A
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
8
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
17.8
4.5
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
32
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
± 30
V
850
mJ
178
1.43
59
0.48
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
RθJS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
©2009 Fairchild Semiconductor Corporation
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A
FQP8N80C
0.7
1
FQPF8N80C
2.1
Units
°C/W
www.fairchildsemi.com
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
January 2009
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
800
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.5
IDSS
IGSSF
IGSSR
VDS = 800 V, VGS = 0 V
--
--
10
µA
VDS = 640 V, TC = 125°C
--
--
100
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
V
--
1.29
1.55
Ω
--
5.6
--
S
--
1580
2050
pF
--
135
175
pF
--
13
17
pF
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 4 A
gFS
Forward Transconductance
VDS = 50 V, ID = 4 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 400 V, ID = 8 A,
RG = 25 Ω
(Note 4, 5)
VDS = 640 V, ID = 8 A,
VGS = 10 V
(Note 4, 5)
--
40
90
ns
--
110
230
ns
--
65
140
ns
--
70
150
ns
--
35
45
nC
--
10
--
nC
--
14
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
8
A
ISM
--
--
32
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 8 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
690
--
ns
Qrr
Reverse Recovery Charge
--
8.2
--
µC
VGS = 0 V, IS = 8 A,
dIF / dt = 100 A/µs
(Note 4)
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A
2
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VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
1
1
10
o
150 C
ID, Drain Current [A]
ID, Drain Current [A]
10
0
10
o
-55 C
o
25 C
0
10
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
-1
10
※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
-1
-1
0
10
10
1
10
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3.0
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
1
10
2.5
VGS = 10V
VGS = 20V
2.0
0
10
1.5
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
※ Note : TJ = 25℃
1.0
-1
0
4
8
12
16
10
20
0.2
0.4
0.6
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2500
1.4
VDS = 160V
VGS, Gate-Source Voltage [V]
Coss
1000
VDS = 400V
10
1500
Capacitance [pF]
1.2
12
Ciss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
500
1.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2000
0.8
VSD, Source-Drain voltage [V]
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
Typical Characteristics
VDS = 640V
8
6
4
2
※ Note : ID = 8A
0
-1
10
0
10
0
1
10
Figure 5. Capacitance Characteristics
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A
0
10
20
30
40
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
3
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(Continued)
1.2
3.0
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
RDS(ON) , (Normalized)
Drain-Source On-Resistance
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 4.0 A
0.5
0.0
-100
200
0
100
150
200
o
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
2
100 µs
1
ID, Drain Current [A]
10 ms
1 ms
10 ms
0
10
※ Notes :
-1
10
100 µs
1
DC
10
10 µs
10
1 ms
0
Operation in This Area
is Limited by R DS(on)
2
10
10 µs
10
DC
※ Notes :
-1
10
o
1. TC = 25 C
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
o
2. TJ = 150 C
3. Single Pulse
-2
-2
10
50
TJ, Junction Temperature [ C]
10
ID, Drain Current [A]
-50
TJ, Junction Temperature [ C]
o
0
1
10
2
10
10
3
10
10
0
10
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 9-2. Maximum Safe Operating Area
for FQPF8N80C
Figure 9-1. Maximum Safe Operating Area
for FQP8N80C
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
Typical Characteristics
10
ID, Drain Current [A]
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A
4
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0
D = 0 .5
0 .2
10
-1
※ N o te s :
1 . Z θ J C ( t) = 0 .7 ℃ /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .1
0 .0 5
0 .0 2
θ JC
(t), T h e r m a l R e s p o n s e
10
(Continued)
0 .0 1
s in g le p u l s e
Z
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
10
D = 0 .5
0
※ N o te s :
1 . Z θ J C (t) = 2 .1 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .2
0 .1
10
0 .0 5
-1
0 .0 2
0 .0 1
Z
θ JC
(t), T h e r m a l R e s p o n s e
Figure 11-1. Transient Thermal Response Curve for FQP8N80C
10
s in g le p u ls e
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
Typical Characteristics
Figure 11-2. Transient Thermal Response Curve for FQPF8N80C
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A
5
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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A
5
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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
I SD
( DUT )
G S
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id th
D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
d i/ d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
V
SD
DD
B o d y D io d e
F o r w a r d V o lt a g e D r o p
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A
6
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FDB037N06 N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
I SD
( DUT )
G S
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id th
D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
d i/ d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
V
SD
DD
B o d y D io d e
F o r w a r d V o lt a g e D r o p
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A
7
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TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A
8
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FQP8N80C/FQPF8N80CFQPF8N80CYDTU 800V N-Channel MOSFET
Package Dimensions
(Continued)
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
15.87 ±0.20
(1.00x45°)
MAX1.47
0.80 ±0.10
)
0°
(3
9.75 ±0.30
15.80 ±0.20
6.68 ±0.20
(0.70)
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A
9
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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
Package Dimensions
FQF8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A
10
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Rev. I37
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A
11
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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
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